I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters G D S HEXFET Power MOSFET V DSS R DS(on) typ. max I D (Silicon Limited) I D (Package Limited) 75V 1.45m 1.8m 355A 195A D Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant G D S TO-247AC G D S Gate Drain Source Standard Pack Orderable Part Number Base part number Package Type Form Quantity TO-247 Tube 25 R DS (on), Drain-to -Source On Resistance (m ) 6 I D = A 4 Limited By Package 4 3 T J = 125 C 2 2 4 8 12 16 2 V GS, Gate-to-Source Voltage (V) 25 5 75 125 15 175 T C, Case Temperature ( C) Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature 1 215-11-3
Absolute Maximium Rating Symbol Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V (Silicon Limited) 355 I D @ T C = C Continuous Drain Current, V GS @ V (Silicon Limited) 25 I D @ T C = 25 C Continuous Drain Current, V GS @ V (Wire Bond Limited) 195 I DM Pulsed Drain Current 159 P D @T C = 25 C Maximum Power Dissipation 517 W Linear Derating Factor 3.5 W/ C V GS Gate-to-Source Voltage ± 2 V T J Operating Junction and -55 to + 175 T STG Storage Temperature Range C Soldering Temperature, for seconds (1.6mm from case) 3 Mounting Torque, 6-32 or M3 Screw lbf in (1.1 N m) Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy 116 mj E AS (Thermally limited) Single Pulse Avalanche Energy 24 I AR Avalanche Current A See Fig 14, 15, 23a, 23b E AR Repetitive Avalanche Energy mj Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case.29 R CS Case-to-Sink, Flat Greased Surface.24 C/W R JA Junction-to-Ambient 4 A Static @ (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 75 V V GS = V, I D = 25µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 42 mv/ C Reference to 25 C, I D = 2mA R DS(on) Static Drain-to-Source On-Resistance 1.45 1.8 V GS = V, I D = A m 1.6 V GS = 6V, I D = 5A V GS(th) Gate Threshold Voltage 2.1 3.7 V V DS = V GS, I D = 25µA 1. V DS =75 V, V GS = V I DSS Drain-to-Source Leakage Current µa 15 V DS =75V,V GS = V,T J =125 C Gate-to-Source Forward Leakage V I GSS na GS = 2V Gate-to-Source Reverse Leakage - V GS = -2V R G Gate Resistance.9 Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-114) Repetitive rating; pulse width limited by max. junction temperature. Limited by T Jmax, starting, L = 233µH, R G = 5, I AS = A, V GS =V. I SD A, di/dt 1279A/µs, V DD V (BR)DSS, T J 175 C. Pulse width 4µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from to 8% V DSS. R is measured at T J approximately 9 C. Limited by T Jmax, starting, L = 1mH, R G = 5, I AS = 63A, V GS =V.. Pulse drain current is limited at 78A by source bonding technology. 2 215-11-3
Dynamic Electrical Characteristics @ (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 42 S V DS = V, I D =A Q g Total Gate Charge 552 83 I D = A Q gs Gate-to-Source Charge 119 V DS = 38V nc Q gd Gate-to-Drain Charge 168 V GS = V Q sync Total Gate Charge Sync. (Qg Qgd) 384 t d(on) Turn-On Delay Time 58 V DD = 38V t r Rise Time 164 I D = A ns t d(off) Turn-Off Delay Time 266 R G = 2.6 t f Fall Time 16 V GS = V C iss Input Capacitance 2955 V GS = V C oss Output Capacitance 227 V DS = 25V C rss Reverse Transfer Capacitance 1395 ƒ = KHz, See Fig.7 pf Effective Output Capacitance C oss eff.(er) 2 V (Energy Related) GS = V, VDS = V to 6V C oss eff.(tr) Output Capacitance (Time Related) 256 V GS = V, VDS = V to 6V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol D I S 355 (Body Diode) showing the A G Pulsed Source Current integral reverse I SM 159 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.3 V,I S = A,V GS = V dv/dt Peak Diode Recovery dv/dt 8.6 V/ns T J = 175 C,I S =A,V DS = 75V t rr Reverse Recovery Time 75 V DD = 64V ns 8 T J = 125 C I F = A, Q rr Reverse Recovery Charge 28 di/dt = A/µs nc 251 T J = 125 C I RRM Reverse Recovery Current 4.8 A 3 215-11-3
C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS TOP 15V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 15V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 6µs PULSE WIDTH Tj = 25 C 4.5V 4.5V 1.1 1 V DS, Drain-to-Source Voltage (V) 6µs PULSE WIDTH Tj = 175 C.1 1 V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics Fig 4. Typical Output Characteristics 2.5 T J = 175 C R DS(on), Drain-to-Source On Resistance I D = A 2. V GS = V 1.5 1 V DS = 25V 6µs PULSE WIDTH.1 2. 3. 4. 5. 6. 7. V GS, Gate-to-Source Voltage (V) 1..5-6 -4-2 2 4 6 8 12 14 16 18 T J, Junction Temperature ( C) Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature V GS = V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 14 12 I D = A V DS = 6V V DS = 38V V DS= 15V Ciss 8 6 Coss Crss 4 2 1 V DS, Drain-to-Source Voltage (V) 2 3 4 5 6 7 Q G Total Gate Charge (nc) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage 4 215-11-3
V (BR)DSS, Drain-to-Source Breakdown Voltage (V) Energy (µj) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) µsec T J = 175 C 1msec Limited by Package OPERATION IN THIS AREA LIMITED BY R DS (on) msec V GS = V 1...5 1. 1.5 2. 2.5 V SD, Source-to-Drain Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage 1 Tc = 25 C Tj = 175 C Single Pulse.1.1 1 DC V DS, Drain-toSource Voltage (V) Fig. Maximum Safe Operating Area 9 Id = 2.mA 5. 4. 85 3. 8 2. 1. 75-6 -4-2 2 4 6 8 12141618 T J, Temperature ( C ). 2 3 4 5 6 7 8 V DS, Drain-to-Source Voltage (V) Fig 11. Drain-to Source Breakdown Voltage Fig 12. Typical C oss Stored Energy R DS (on), Drain-to -Source On Resistance (m ) 2.2 2. V GS = 5.5V V GS = 6.V V GS = 7.V V GS = 8.V V GS = V 1.8 1.6 1.4 5 15 2 I D, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 215-11-3
E AR, Avalanche Energy (mj) Avalanche Current (A) 1.1.1 D =.5.2..5.2.1 Thermal Response ( Z thjc ) C/W.1 SINGLE PULSE Notes: ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 t 1, Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 15 C and Tstart =25 C (Single Pulse) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 15 C. (Single Pulse) 1 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 tav (sec) Fig 15. Avalanche Current vs. Pulse width 12 8 6 4 2 TOP Single Pulse BOTTOM 1.% Duty Cycle I D = A 25 5 75 125 15 175 Starting T J, Junction Temperature ( C) Fig 16. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves, Figures 15, 16: (For further info, see AN-5 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 14, 15). t av = Average time in avalanche. D = Duty cycle in avalanche = tav f Z thjc (D, t av ) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3 BV I av ) = T/ Z thjc I av = 2 T/ [1.3 BV Z th ] E AS (AR) = P D (ave) t av 6 215-11-3
Q RR (nc) I RRM (A) Q RR (nc) V GS (th) Gate threshold Voltage (V) I RRM (A) 4.5 4. 3.5 3 25 2 I F = 6A V R = 64V T J = 125 C 3. 2.5 2. I D = 25µA I D = 1.mA I D = 1.A 15 1.5 5 1. -75-5 -25 25 5 75 125 15 175 T J, Temperature ( C ) 2 4 6 8 di F /dt (A/µs) Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt 3 25 2 I F = A V R = 64V T J = 125 C 8 6 I F = 6A V R = 64V T J = 125 C 15 4 5 2 2 4 6 8 di F /dt (A/µs) 2 4 6 8 di F /dt (A/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 2. Typical Stored Charge vs. dif/dt 8 I F = A V R = 64V T J = 125 C 6 4 2 2 4 6 8 di F /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 215-11-3
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V (BR)DSS 15V tp V DS L DRIVER R G 2V tp D.U.T I AS.1 + - V DD A I AS Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Vds Id Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform 8 215-11-3
TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 2/26/21 EXAMPLE: THIS IS AN IRFPE3 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 21 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE3 135H 56 57 PART NUMBER DATE CODE YEAR 1 = 21 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 215-11-3
Qualification Information Qualification Level Industrial Moisture Sensitivity Level TO-247AC N/A RoHS Compliant Yes Qualification standards can be found at International Rectifier s web site: http://www.irf.com/product-info/reliability/ Applicable version of JEDEC standard at the time of product release. Revision History Date 2/19/215 11/3/215 Comments Updated E AS (L =1mH) = 24mJ on page 2 Updated note 9 Limited by T Jmax, starting, L = 1mH, R G = 5, I AS = 63A, V GS =V on page 2 Corrected fig 4 label typo from 25 C to 175 C on page 4. Updated datasheet with corporate template Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 215 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 215-11-3