The egan FET Journey Continues GaN on Silicon Technology: Devices and Applications Alex Lidow Efficient Power Conversion Corporation EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 1
Agenda Hard Switched Circuits Buck Converter Envelope Tracking Resonant Circuits Wireless Power Transmission What is in the future? EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 2
Key Applications Today RF DC-DC Envelope Tracking GaN Enabled Wireless Power Transmission GaN Enabled RadHard LiDAR RF Transmission Network and Server Power Supplies Point of Load Modules Solar Micro-inverters Energy Efficient Lighting Class D Audio EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 3
High Frequency Buck Converters CPES Gen 1 CPES Gen 2 CPES Gen 3 GaN Driver T 0.9 0.88 Generations vs Efficiency GaN Gen 3 C in Efficiency 0.86 0.84 SR GaN Gen 1 0.82 Si GaN Gen 2 0.78 Reference: D. Reusch, D. Gilham, Y. Su, and F.C. Lee, C, Gallium Nitride Based 3D Integrated Non-Isolated Point of Load Module, APEC 2012 EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 4 0.8 0 5 10 15 20 25 Output Current (Io) Vin=12V Vo=1.2V Fs=1MHz L=150nH
Switchnode Peak and Ringing 25 V Si MOSFET ~ 5.7 ns 40 V egan FET ~ 1.5 ns 40 V Si MOSFET ~ 7.5 ns 3 V/Div 5 ns/div EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 5
Envelope Tracking (ET) EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 6
Peak to Average Power Ratio Same average Reference: Nujira.com website EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 7
Effect of PAPR Average Power Peak Power Fixed supply PAPR = 0dB Peak efficiency up to 65% Average efficiency only 25 % Increasing PAPR Output Probability Output Power (dbm) EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 8
Effect of Envelope Tracking Average efficiency > 50 % (incl. ET) Envelope Tracking Average Power Output Probability Output Power (dbm) EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 9
Envelope Tracking Supply ET power supply topologies vary Open loop boost full BW required Closed loop linear-assisted Buck* Buck ~ 10% Bandwidth ~ 90% Power Linear AMP ~ 10% Power Highest 90% of Bandwidth *Reference: V. Yousefzadeh, et al, Efficiency optimization in linear-assisted switching power converters for envelope tracking in RF power amplifiers, ISCAS 2005 EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 10
15 A OUT / 1 MHz Single φ Buck Modified an EPC9002 development board 45 V IN Before After Output Inductor 22 V OUT Common EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 11
Efficiency Results 98% 16 97% 14 96% 12 Efficiency (%) 95% 94% 93% 4 MHz Efficiency 10 8 6 Power loss (W) 92% 1 MHz Efficiency 4 91% 90% 2 1 MHz Losses 0 0 50 100 150 200 250 300 350 Output Power (W) 4 MHz Losses EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 12
Wireless Power EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 13
Wireless Power EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 14
Block Diagram of the Wireless System PSU Source Unit Un-Regulated DC output 24V DC + Gate Driver PSU Gate Driver Matching Impedance Network Resonant Source Capture Device Matching Impedance Network Device Unit Feedback and Basic Control WiTricity Coils Load EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 15
Experimental System Setup Coil Feedback egan FETs RF connection Device Coil Device Board 25mm 50mm Source Board MOSFET RF connection Source Coil RF connection EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 16
Efficiency as Function of Load Power Efficiency [%] 6.639 MHz, 23.6 Ω load 72 70 68 66 64 62 60 58 56 54 V in =8V V out =6.8V V in =22V V out =18.3V 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Output Power [W] EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 17
What s in the Future? EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 18
Beyond 600 Volts Rated R DS(ON) mω 1000.00 100.00 10.00 1.00 4 7 2010 25 LGA Package 2011 2012 2013 500 mω 5x6mm PQFN 100 250 mω 5x6mm 250 PQFN 90 mω 8x8mm PQFN 2013 2014 400 mω 5x6mm 400 PQFN 150 mω 8x8mm PQFN 0 200 400 600 800 1000 1200 1400 Rated V DSS(MAX) EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 19
Beyond Discrete Devices Driver On Board Discrete FET with Driver Full-Bridge with Driver and Level Shift EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 20
Summary GaN transistors enable exciting new applications such as RF Envelope Tracking and Wireless Power Transmission GaN transistors have the potential to replace silicon power MOSFETs in power conversion applications with a low-cost and higher efficiency solution egan FETs are straightforward to use, but you can t just drop them into a MOSFET socket. Some R&D is needed start today! EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 21
The end of the road for silicon.. is the beginning of the egan FET journey! EPC - The Leader in egan FETs May, 2013 PCIM 2013 www.epc-co.com 22