DISCRETE SEMICONDUCTORS DATA SHEET. PUMT1 Dual PNP transistor Dec 07. Preliminary specification File under Discrete Semiconductors, SC04

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Transcription:

DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC04 1995 Dec 07

FEATURES Two transistors in one SC70 package Reduces number of components and boardspace No mutual interference between the transistors. APPLICATIONS General purpose switching Small signal amplification. DESCRIPTION Two PNP transistors in a plastic six lead SC70-6 (S-mini) package. handbook, halfpage 6 5 4 6 5 4 PINNING PIN DESCRIPTION 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 TR2 TR1 1 2 3 1 2 3 Top view MAM224 Marking code: FF. Fig.1 Simplified outline (SC70-6), pin configuration and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor V CBO collector-base voltage open emitter 50 V V CEO collector-emitter voltage open base 40 V V EBO emitter-base voltage open collector 5 V I C collector current (DC) 100 ma h FE DC current gain I C = 1 ma; V CE = 6 V 120 f T transition frequency I C = 2 ma; V CE = 12 V; f = 100 MHz; T amb =25 C 100 MHz Per package P tot total power dissipation up to T amb =25 C 300 mw 1995 Dec 07 2

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor V CBO collector-base voltage open emitter 50 V V CEO collector-emitter voltage open base 40 V V EBO emitter-base voltage open collector 5 V I C collector current (DC) 100 ma P tot total power dissipation 200 mw T amb operating ambient temperature 65 +150 C T stg storage temperature 65 +150 C T j junction temperature 150 C Per package P tot total power dissipation up to T amb =25 C; note 1 300 mw THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient in free air; note 1 416 K/W Note to the Limiting values and Thermal characteristics 1. In accordance with standard mounting conditions SC70, six lead version. ELECTRICAL CHARACTERISTICS T amb =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor V (BR)CBO collector-base breakdown voltage open emitter; I C = 50 µa; I E =0 50 V V (BR)CEO collector-emitter breakdown voltage open base; I C = 1 ma; I B =0 40 V V (BR)EBO emitter-base breakdown voltage open collector; I E = 50 µa; I C =0 5 V V CEsat collector-emitter saturation voltage I C = 50 ma; I B = 5 ma; note 1 200 mv I CBO collector-base cut-off current V CB = 30 V; I E =0 100 na V CB = 30 V; I E = 0; T j = 150 C 10 µa I EBO emitter-base cut-off current V EB = 4 V; I C =0 100 na h FE DC current gain I C = 1 ma; V CE = 6 V 120 f T transition frequency I C = 2 ma; V CE = 12 V; f = 100 MHz 100 MHz C c collector capacitance I E =i e = 0; V CB = 12 V; f = 1 MHz 2.2 pf Note to the Electrical characteristics 1. Pulse test: t p 300 µs; δ 0.02. 1995 Dec 07 3

PACKAGE OUTLINE 0.2 1.1 0.8 0.9 0.6 0.1 0.0 0.25 0.10 0.3 0.1 A 1.35 1.15 0.2 M B B 0.65 0.65 1 2 6 5 0.3 0.2 (6x) 2.2 1.8 3 4 MSA368 2.2 2.0 0.2 M A Dimensions in mm. Fig.2 SC70-6. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Dec 07 4

NOTES 1995 Dec 07 5

NOTES 1995 Dec 07 6

NOTES 1995 Dec 07 7

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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 113062/1100/01/pp8 Date of release: 1995 Dec 07 Document order number: 12NC