DATA SHEET. OM2052 Wideband amplifier module DISCRETE SEMICONDUCTORS Nov 28
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1 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 99 File under Discrete Semiconductors, SC6 995 Nov 28
2 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended as an amplifier in MATV and CATV systems. PINNING PIN DESCRIPTION input 2 common ( ) 3 common ( ) 4 common ( ) 5 not connected 6 common ( ) 7 output/supply (+) handbook, halfpage pin identification MLA420 Fig. Simplified outline. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT f frequency range MHz Z S, Z L source and load impedance 75 Ω G T transducer gain = S db G T flatness of frequency response db V o(rms) output voltage (RMS value) d im = 60 db; 07 dbµv 3 rd order intermodulation (3-tone) F noise figure 4.5 db V B DC supply voltage V T amb ambient operating temperature C 995 Nov 28 2
3 CIRCUIT DIAGRAM AND PRINTED-CIRCUIT BOARD handbook, full pagewidth C R R4 7 TR TR2 R3 R5 R7 R8 R2 C3 MCD498 2, 3, 4, 6 Fig.2 Circuit diagram. handbook, halfpage top view L 75 Ω track C C 75 Ω track bottom view MCD497 L>5µH; e.g. catalogue No , or 27 turns enamelled 0.3 mm copper wire wound on a ferrite core with a diameter of.6 mm. C > 220 pf ceramic capacitor. Fig.3 Printed-circuit board holes and tracks. 995 Nov 28 3
4 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 34). SYMBOL PARAMETER MIN. MAX. UNIT V B DC supply voltage 5 V P IM peak incident powers on pins and 8 00 mw T amb ambient operating temperature C T stg storage temperature C CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Measuring conditions T amb ambient operating temperature 25 C V B DC supply voltage V Z S source impedance 75 Ω Z L load impedance 75 Ω Z 0 characteristic impedance of 75 Ω HF connections f frequency range MHz Performance I B supply current ma G T transducer gain = S db G T flatness of frequency response db VSWR in individual maximum VSWR input; note 2.2 VSWR out individual maximum VSWR output; note 2. S 2 2 back attenuation f = 00 MHz 36 db f = 860 MHz 29 db V o(rms) output voltage (RMS value) d im = 60 db; 07 dbµv 3 rd order intermodulation (3-tone) F noise figure 4.5 db Operating conditions T amb ambient operating temperature C V B DC supply voltage V f frequency range MHz Z S source impedance 75 Ω Z L load impedance 75 Ω Note. Highest value (for sample) occurring in the frequency range. 995 Nov 28 4
5 32 handbook, full pagewidth 2 S 2 (db) 30 MCD Gain over entire frequency range. Z 0 =75Ω. f (MHz) 000 Fig.4 Transducer gain as a function of frequency. 995 Nov 28 5
6 handbook, full pagewidth j j 40 MHz MHz MCD448 Fig.5 Input impedance derived from input reflection coefficient (S ), co-ordinates in ohms 75; typical values. handbook, full pagewidth j 0 40 MHz j 860 MHz MCD449 Fig.6 Output impedance derived from output reflection coefficient (S 22 ), co-ordinates in ohms 75; typical values. 995 Nov 28 6
7 MOUNTING The module should preferably be mounted on a double-sided printed-circuit board, see Fig.3. Input and output should be connected to 75 Ω tracks. The connection to the common pins should be as close to the seating plane as possible. SOLDERING Hand soldering The maximum contact time for a soldering iron temperature of 260 C up to the seating plane is 5 s. Dip or wave soldering The maximum permissible temperature for the solder is 260 C. It must not be in contact with the joint for more than 5s. The total contact time of successive solder waves must not exceed 5 s. The device may be mounted against the printed-circuit board, but the temperature of the device must not exceed 25 C. If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature below the allowable limit. PACKAGE OUTLINE pin identification handbook, full pagewidth 9 max 3 max seating plane 8 max max 2.54 (6x) MLA49 Dimensions in mm. Fig.7 Resin coated encapsulation. 995 Nov 28 7
8 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 995 Nov 28 8
9 NOTES 995 Nov 28 9
10 NOTES 995 Nov 28 0
11 NOTES 995 Nov 28
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DATA SHEET. BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor. Philips Semiconductors DISCRETE SEMICONDUCTORS.
DISCRETE SEMICONDUCTORS DATA SHEET BFG4W BFG4W/X; BFG4W/XR File under Discrete Semiconductors, SC4 October 994 Philips Semiconductors BFG4W BFG4W/X; BFG4W/XR FEATURES High power gain Low noise figure High
DATA SHEET. 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS. Product specification 2001 Jan 18
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MD102 2001 Jan 18 FEATURES PINNING Low forward voltage Very small SMD plastic package Low diode capacitance. APPLICATIONS UHF mixers Sampling circuits
DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS M3D124 Supersedes data of 1997 Nov 21 File under Discrete Semiconductors, SC14 1998 Jul 06 FEATURES High power gain High efficiency 1.9 GHz operating area Linear and non-linear
DATA SHEET. BCX19 NPN general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12.
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 Supersedes data of 1999 Apr 12 2000 Jul 28 FEATURES High current (500 ma) Low voltage (45 V). APPLICATIONS General purpose amplification Saturated
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage MBD128. BAT754L Schottky barrier triple diode. Product specification 2001 Jan 18
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 2001 Jan 18 FEATURES Very low forward voltage Guard ring protected Low diode capacitance Three independent diodes in a small plastic SMD package.
DATA SHEET. PMSTA92 PNP high-voltage transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Jun 01.
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D102 Supersedes data of 1999 Jun 01 2001 Feb 20 FEATURES PINNING S-mini package High voltage. APPLICATIONS Primarily intended for use in telephony
DATA SHEET. TDA8771A Triple 8-bit video Digital-to-Analog Converter (DAC) INTEGRATED CIRCUITS Jan 25
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC02 1996 Jan 25 FEATURES 8-bit resolution Sampling rate up to 35 MHz Internal reference voltage regulator No deglitching circuit required
DATA SHEET. TDA7056B 5 W mono BTL audio amplifier with DC volume control INTEGRATED CIRCUITS Aug 15
INTEGRATED CIRCUITS DATA SHEET 5 W mono BTL audio amplifier with DC Supersedes data of 1996 May 28 File under Integrated Circuits, IC01 1997 Aug 15 FEATURES DC Few external components Mute mode Thermal
The BLF246 as an H.F.-S.S.B. amplifier
APPLICATION NOTE The BLF246 as an H.F.-S.S.B. amplifier CONTENTS 1 SUMMARY 2 INTRODUCTION 3 NARROW BAND TEST AT 28 MHz 4 WIDEBAND OPERATION 5 ACKNOWLEDGEMENT 1998 Mar 23 2 1 SUMMARY This report gives information
DISCRETE SEMICONDUCTORS DATA SHEET. k, halfpage M3D088. MMBT3906 PNP switching transistor. Product specification 2000 Apr 11
DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 2000 Apr 11 FEATURES Low current (max. 100 ma) Low voltage (max. 40 V). APPLICATIONS Telephony and professional communication equipment. PINNING PIN
DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BAP50-02 General purpose PIN diode. Product specification 2001 Apr 17
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 2001 Apr 17 FEATURES Low diode capacitance Low diode forward resistance. APPLICATIONS General RF applications. PINNING PIN DESCRIPTION 1 cathode 2 anode DESCRIPTION
DISCRETE SEMICONDUCTORS DATA SHEET M3D173. BFR505T NPN 9 GHz wideband transistor. Product specification Supersedes data of 2000 Mar 14.
DISCRETE SEMICONDUCTORS DATA SHEET M3D73 BFRT Supersedes data of Mar 4 May 7 BFRT FEATURES Low current consumption High power gain Low noise figure High transition frequency Gold metallization ensures
DATA SHEET. BZA462A Quadruple ESD transient voltage suppressor DISCRETE SEMICONDUCTORS May 25
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 Quadruple ESD transient voltage suppressor Supersedes data of 1998 Oct 30 1999 May 25 FEATURES PINNING ESD rating >15 kv, according to IEC1000-4-2
DISCRETE SEMICONDUCTORS DATA SHEET. k, halfpage M3D102. BAP65-05W Silicon PIN diode. Product specification 2001 May 07
DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 2001 May 07 FEATURES Two elements in common cathode configuration High voltage, current controlled RF resistor for RF switches Low diode capacitance
DISCRETE SEMICONDUCTORS DATA SHEET. LLE16120X NPN microwave power transistor Feb 18. Product specification Supersedes data of November 1994
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 994 997 Feb 8 FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated
DATA SHEET. BZB784 series Voltage regulator double diodes DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2000 May 24.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 Supersedes data of 2000 May 24 2001 Feb 27 FEATURES Total power dissipation: max. 350 mw Approx. 5% V Z tolerance Working voltage range: nom. 2.4
DISCRETE SEMICONDUCTORS DATA SHEET M3D390. BLF1047 UHF power LDMOS transistor. Preliminary specification Supersedes data of 1999 July 01.
DISCRETE SEMICONDUCTORS DATA SHEET M3D390 Supersedes data of 1999 July 01 2000 Feb 02 FEATURES High power gain Easy power control Excellent ruggedness Source on underside eliminates DC isolators, reducing
DATA SHEET. KMI15/2 Integrated rotational speed sensor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2000 Jun 26.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D281 Supersedes data of 2000 Jun 26 2000 Sep 05 FEATURES Digital current output signal Zero speed capability Wide air gap Wide temperature range Insensitive
DISCRETE SEMICONDUCTORS DATA SHEET. LFE15600X NPN microwave power transistor Feb 19. Product specification Supersedes data of January 1994
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of January 1994 1997 Feb 19 FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated
DISCRETE SEMICONDUCTORS DATA SHEET M3D173. PRF949 UHF wideband transistor. Product specification Supersedes data of 1999 Nov 02.
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 Supersedes data of 1999 Nov 2 2 Apr 3 FEATURES Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability. PINNING SOT416 (SC-75)
DATA SHEET. TDA1560Q 40 W car radio high power amplifier INTEGRATED CIRCUITS May 14
INTEGRATED CIRCUITS DATA SHEET TDA560Q 40 W car radio high power amplifier Supersedes data of 995 Jul 07 File under Integrated Circuits, IC0 996 May 4 FEATURES Very high output power Low power dissipation
DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 26.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 1999 Apr 26 2001 Feb 20 FEATURES High current (max. 0.5 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D168. S1 series SMA controlled avalanche rectifiers. Product specification 2000 Feb 14
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 2000 Feb 14 FEATURES Glass passivated High maximum operating temperature Ideal for surface mount automotive applications Low leakage current Excellent
DISCRETE SEMICONDUCTORS DATA SHEET M3D076. BLV920 UHF power transistor Nov 17. Product specification Supersedes data of 1995 Apr 10
DISCRETE SEMICONDUCTORS DATA SHEET M3D76 Supersedes data of 1995 Apr 1 1997 Nov 17 FEATURES Internal input matching to achieve high power gain and easy design of wideband circuits Emitter ballasting resistors
DATA SHEET. BRY39 Programmable unijunction transistor/ Silicon controlled switch DISCRETE SEMICONDUCTORS Jul 24
DISCRETE SEMICONDUCTORS DATA SHEET M3D082 Programmable unijunction transistor/ Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 24 FEATURES Programmable unijunction transistor.
DISCRETE SEMICONDUCTORS DATA SHEET M3D396. KMZ52 Magnetic Field Sensor. Product specification 2000 Jun 09
DISCRETE SEMICONDUCTORS DATA SHEET M3D396 2000 Jun 09 FEATURES High sensitivity Integrated compensation coil Integrated set/reset coil. APPLICATIONS Navigation Current and earth magnetic field measurement
DISCRETE SEMICONDUCTORS DATA SHEET. BFG35 NPN 4 GHz wideband transistor. Product specification Supersedes data of 1995 Sep 12.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1995 Sep 12 1999 Aug 24 DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications.
DISCRETE SEMICONDUCTORS DATA SHEET. age MBD128. PBSS4240Y 40 V low V CEsat NPN transistor. Product specification 2001 Jul 13
DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS4240Y 40 V low V CEsat NPN transistor 2001 Jul 13 FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability
DATA SHEET. BLV861 UHF linear push-pull power transistor DISCRETE SEMICONDUCTORS Jan 16. Product specification Supersedes data of 1998 Jan 14
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D99 UHF linear push-pull power transistor Supersedes data of 1998 Jan 14 1998 Jan 16 FEATURES Double stage internal input and output matching networks
DISCRETE SEMICONDUCTORS DATA SHEET. BLV859 UHF linear push-pull power transistor Jul 26. Product specification Supersedes data of 1995 Oct 04
DISCRETE SEMICONDUCTORS DATA SHEET UHF linear push-pull power transistor Supersedes data of 1995 Oct 4 1996 Jul 26 FEATURES Double internal input and output matching for an optimum wideband capability
DATA SHEET. BC516 PNP Darlington transistor DISCRETE SEMICONDUCTORS Apr 23. Product specification Supersedes data of 1997 Apr 16.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Apr 16 1999 Apr 23 FEATURES High current (max. 500 ma) Low voltage (max. 30 V) Very high DC current gain (min. 30000). APPLICATIONS
DATA SHEET. BFG92A/X NPN 5 GHz wideband transistor Sep 23. Product specification Supersedes data of 1995 Sep 12. book, halfpage M3D071
DATA SHEET book, halfpage M3D7 BFG9A/X Supersedes data of 99 Sep 998 Sep 3 BFG9A/X FEATURES High power gain Low noise figure Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications
DATA SHEET. TDA8563AQ 2 40 W/2 Ω stereo BTL car radio power amplifier with diagnostic facility INTEGRATED CIRCUITS Feb 20
INTEGRATED CIRCUITS DATA SHEET 2 40 W/2 Ω stereo BTL car radio power amplifier with diagnostic facility File under Integrated Circuits, IC01 1997 Feb 20 FEATURES Requires very few external components High
DATA SHEET. TDA7052B Mono BTL audio amplifier with DC volume control INTEGRATED CIRCUITS Aug 15
INTEGRATED CIRCUITS DATA SHEET Mono BTL audio amplifier with DC volume Supersedes data of 1966 May 28 File under Integrated Circuits, IC01 1997 Aug 15 FEATURES DC volume Few external components Mute mode
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D088. PBR941B UHF wideband transistor. Preliminary specification 2001 Jan 18
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 21 Jan 18 FEATURES Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability. PINNING SOT23 PIN 1 base 2 emitter
DATA SHEET. TDA8561Q 2 24 W BTL or 4 12 W single-ended car radio power amplifier INTEGRATED CIRCUITS Sep 22
INTEGRATED CIRCUITS DATA SHEET 2 24 W BTL or 4 2 W single-ended car radio power amplifier Supersedes data of July 994 File under Integrated Circuits, IC0 997 Sep 22 2 24 W BTL or 4 2 W single-ended car
DISCRETE SEMICONDUCTORS DATA SHEET. BTA225 series B Three quadrant triacs high commutation
DISCRETE SEMICONDUCTORS DATA SHEET high commutation September 997 GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope intended for
DISCRETE SEMICONDUCTORS DATA SHEET M3D372. BLV2047 UHF power transistor Jun 09. Product specification Supersedes data of 1999 Jan 28
DISCRETE SEMICONDUCTORS DATA SHEET M3D372 Supersedes data of 1999 Jan 28 1999 Jun 9 FEATURES Emitter ballasting resistors for optimum temperature profile Gold metallization ensures excellent reliability
INTEGRATED CIRCUITS DATA SHEET. TDA6106Q Video output amplifier Mar 03. Product specification File under Integrated Circuits, IC02
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC02 1997 Mar 03 FEATURES No external heatsink required Black current measurement output for Automatic Black current Stabilization (ABS) Internal
DATA SHEET. SAA7197 Clock Generator Circuit for desktop video systems (CGC) INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET Clock Generator Circuit for desktop video systems (CGC) File under Integrated Circuits, IC22 August 1996 FEATURES Suitable for Desktop Video systems Two different sync sources
DATA SHEET. TDA8566Q 2 25 W BTL stereo car radio power amplifier with differential inputs and diagnostic outputs INTEGRATED CIRCUITS.
INTEGRATED CIRCUITS DATA SHEET 2 25 W BTL stereo car radio power amplifier with differential inputs and diagnostic outputs Supersedes data of 1996 Apr 11 File under Integrated Circuits, IC01 1998 Sep 23
DATA SHEET. TDA8567Q 4 25 W BTL quad car radio power amplifier INTEGRATED CIRCUITS Sep 23
INTEGRATED CIRCUITS DATA SHEET Supersedes data of 1997 Feb 12 File under Integrated Circuits, IC01 1998 Sep 23 FEATURES Requires very few external components High output power Low output offset voltage
DISCRETE SEMICONDUCTORS DATA SHEET. KMI18/2 Integrated rotational speed sensor. Preliminary specification 2000 Sep 05
DISCRETE SEMICONDUCTORS DATA SHEET 2000 Sep 05 FEATURES Open collector output For active target wheel application Wide air gap Zero speed capability Wide temperature range Insensitive to vibration. DESCRIPTION
DATA SHEET. TDA1561Q 2 23 W high efficiency car radio power amplifier INTEGRATED CIRCUITS Aug 14
INTEGRATED CIRCUITS DATA SHEET 2 23 W high efficiency car radio power Supersedes data of 1997 Jun 11 File under Integrated Circuits, IC01 1997 Aug 14 FEATURES Low dissipation due to switching from Single-Ended