SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power Transistor SS*80R380S Rev. 1.2 Oct. 2017
September, 2013 SJ-FET SSF80R380S/SSP80R380S/SSW80R380S/SSA80R380S 800V N-Channel MOSFET Description Features SSMOS-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing an advanced charge balance mechanism for outstanding 850V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.36Ω This advanced technology has been tailored to minimize conduction Ultra Low Gate Charge (typ. Qg = 17.5nC) loss, provide superior switching performance, and withstand 100% avalanche tested extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Absolute Maximum Ratings Symbol Parameter SSP_W_A80R380S SSF80R380S Unit V DSS Drain-Source Voltage 800 V Drain Current -Continuous (TC = 25 ) 13.6* I D A -Continuous (TC = 100 ) 8.6* I DM Drain Current - Pulsed (Note 1) 40* A V GSS Gate-Source voltage ±30 V E AS Single Pulsed Avalanche Energy (Note 2) 284 mj I AR Repetitive Avalanche Current (Note 1) 2.4 A E AR Repetitive Avalanche Energy (Note 1) 0.43 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 15 V/ns dvds/dt Drain Source voltage slope (Vds=640V) 50 V/ns P D Power Dissipation (TC = 25 ) 104 32 W T J, T STG Operating and Storage Temperature Range -55 to +150 T L SSF80R380S SSP80R380S Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds SSW80R380S TO-247 SSA80R380S TO-3P 300 * Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75. Thermal Characteristics Symbol Parameter SSP_W_A80R380S SSF80R380S Unit R θjc Thermal Resistance, Junction-to-Case 1.2 3.9 /W R θcs Thermal Resistance, Case-to-Sink Typ. 0.5 - /W R θja Thermal Resistance, Junction-to-Ambient 62 80 /W
Electrical Characteristics TC = 25 unless otherwise noted Symbol Parameter Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25 800 - - V VGS = 0V, ID = 250µA, TJ = 150-850 - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature ID = 250µA, Referenced to Coefficient 25-0.6 - V/ IDSS Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V - 1 µa - -TJ = 150 10 - µa IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V - - 100 na IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V - - -100 na On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.5 3.5 4.5 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 7.5A - 0.36 0.41 Ω gfs Forward Transconductance VDS = 40V, ID = 15A - 12 - S Rg Gate resistance f=1 MHz, open drain - 1.5 - Ω Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = - 800 - pf Coss Output Capacitance 100kHz - 230 - pf Crss Reverse Transfer Capacitance - 15 - pf Switching Characteristics td(on) Turn-On Delay Time VDD = 400V, ID = 7.5A, RG = - 31 - ns tr Turn-On Rise Time 25Ω(Note 4) - 19 - ns td(off) Turn-Off Delay Time - 91 - ns tf Turn-Off Fall Time - 20 - ns Qg Total Gate Charge VDS = 450V, ID = 7.5A, VGS = - 17.5 - nc Qgs Gate-Source Charge 10V (Note 4) - 4.1 - nc Qgd Gate-Drain Charge - 7.1 - nc Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current - - 14 A ISM Maximum Pulsed Drain-Source Diode Forward Current - - 40 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 7.5A - 0.9 1.5 V trr Reverse Recovery Time VGS = 0V, IS = 7.5A, dif/dt - 345 - ns Qrr Reverse Recovery Charge =100A/µs - 4.5 - µc NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I AS =2.4A, VDD=50V, Starting TJ=25 3. I SD ID, di/dt 200A/us, V DD BV DSS, Starting TJ = 25 4. Essentially Independent of Operating Temperature Typical Characteristics
Typical Performance Characteristics Figure 1: On-Region Characteristics@25 C Figure 2: On-Region Characteristics@125 C Figure 3:Power Dissipation TO-220, TO-247 Figure 4: Power dissipation TO-220FullPAK Figure 5: On-Resistance vs. Junction Temperature Figure 6: On-Resistance vs. Drain Current, Tj=125 C
Vgs[V] Typical Performance Characteristics Figure 7: Body-Diode Characteristics 10 9 8 7 6 5 4 3 2 1 0 0 4 8 12 16 20 Qgate[nC] Figure 8: Gate-Charge Characteristics Figure 9: Capacitance Characteristics Figure 10: C oss stored Energy Figure 11: Maximum Forward Biased Safe Operating Area Tc=25 C, TO-220, TO-247 Figure 12: Maximum Forward Biased Safe Operating Area Tc=25 C, TO-220 FullPAK
Typical Performance Characteristics Figure 13: Break Down vs. Junction Temperature Figure 14: Typical transfer characteristics Pulse Width (s) Figure 15: Maximum Transient Thermal Impedance TO-220, TO-247 Pulse Width (s) Figure 16: Maximum Transient Thermal Impedance TO-220 FullPAK Figure 17: Avalanche energy
Test circuits Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Switching time waveform Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform
Test circuits Test circuit and waveform for diode characteristics Test circuit for diode characteristics Diode recovery waveform
Package Outline TO-220 Full PAK
Package Outline TO-220 COMMON DIMENIONS
Package Outline TO-247
Package Outline TO-3P