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Transcription:

DATA SHEET book, halfpage M3D7 BFG9A/X Supersedes data of 99 Sep 998 Sep 3

BFG9A/X FEATURES High power gain Low noise figure Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the UHF and microwave range. DESCRIPTION Silicon NPN transistor in a 4-pin, dual-emitter SOT43B plastic package. PINNING PIN DESCRIPTION collector emitter 3 base 4 emitter handbook, columns 4 3 Top view MSB4 Marking code: V4. Fig. SOT43B. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CBO collector-base voltage V V CEO collector-emitter voltage V I C collector current (DC) ma P tot total power dissipation T s 6 C 4 mw C re feedback capacitance I C =i c = ; V CB = V; f = MHz.3 pf f T transition frequency I C = ma; V CE = V; f = MHz 3. GHz G UM maximum unilateral power gain I C = ma; V CE =V; T amb = C; f = GHz I C = ma; V CE =V; T amb = C; f = GHz F noise figure Γ s = Γ opt ; I C = ma; V CE =V; T amb = C; f = GHz 6 db db db 998 Sep 3

BFG9A/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter V V CEO collector-emitter voltage open base V V EBO emitter-base voltage open collector V I C collector current (DC) ma P tot total power dissipation T s 6 C; note 4 mw T stg storage temperature range 6 C T j junction temperature 7 C Note. T s is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point note 9 K/W Note. T s is the temperature at the soldering point of the collector pin. CHARACTERISTICS T j = C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector leakage current I E = ; V CB =V na h FE DC current gain I C = ma; V CE = V 4 9 C c collector capacitance I E =i e = ; V CB = V; f = MHz.6 pf C e emitter capacitance I C =i c = ; V EB = V; f = MHz.9 pf C re feedback capacitance I C =i c = ; V CB = V; f = MHz.3 pf f T transition frequency I C = ma; V CE = V; f = MHz 3. GHz G UM maximum unilateral power gain; note I C = ma; V CE =V; T amb = C; f = GHz I C = ma; V CE =V; T amb = C; f = GHz F noise figure Γ s = Γ opt ; I C = ma; V CE =V; T amb = C; f = GHz Γ s = Γ opt ; I C = ma; V CE =V; T amb = C; f = GHz 6 db db db 3 db Note. G UM is the maximum unilateral power gain, assuming S is zero and G UM = S log-------------------------------------------------------------- ( S ) ( S ) db. 998 Sep 3 3

BFG9A/X 8 MBB963 - MCD74 P tot (mw) h FE 6 8 4 4 T ( o s C) 3 I C (ma) V CE =V. Fig. Power derating curve. Fig.3 DC current gain as a function of collector current; typical values. handbook,.6 halfpage MCD7 6 MBB7 Cre (pf) f T (GHz).4 4. 6 8 4 V CB (V) 3 I C (ma) I C =i c = ; f = MHz. V CE = V; T amb = C; f = MHz. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. Fig. Transition frequency as a function of collector current; typical values. 998 Sep 3 4

BFG9A/X 3 MCD77 3 MCD78 gain (db) MSG gain (db) G UM MSG G UM I C (ma) I C (ma) V CE = V; f = MHz. V CE = V; f = GHz. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. gain (db) 4 G UM MCD79 gain (db) 4 G UM MCD8 3 MSG 3 MSG Gmax G max 3 4 f (MHz) 3 4 f (MHz) V CE = V; I C = ma. V CE = V; I C =ma. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. 998 Sep 3

BFG9A/X 4 F (db) f = GHz MCD8 4 F (db) MCD8 I C = ma ma 3 GHz 3 ma MHz I C (ma) 3 f (MHz) 4 V CE =V. V CE =V. Fig. Minimum noise figure as a function of collector current; typical values. Fig. Minimum noise figure as a function of frequency; typical values. handbook, full pagewidth stability circle. unstable region. + j j MSG.. 3.9 db OPT * F min =.6 db db. 3 db 4 db. Z o =Ω. Maximum stable gain = 3.9 db. MCD83 Fig. Common emitter noise figure circles; typical values. 998 Sep 3 6

BFG9A/X handbook, full pagewidth. stability circle + j unstable region j. OPT MSG.. 9.9 db. db * F min =. db. 3 db 4 db. MCD84 Z o =Ω. Maximum stable gain = 9.9 db. Fig.3 Common emitter noise figure circles; typical values. handbook, full pagewidth. db + j j. * *.. G max. db OPT F min = 3 db 4 db 3. db. db db. MCD8 Z o =Ω. Fig.4 Common emitter noise figure circles; typical values. 998 Sep 3 7

BFG9A/X handbook, full pagewidth.. 3 GHz + j j.. 4 MHz.. MCD86 V CE = V; I C =ma. Fig. Common emitter input reflection coefficient (S ); typical values. 9 o handbook, full pagewidth 3 o 4 o 8 o 4 4 MHz 3 3 GHz o _ 3 o _ 4 o V CE = V; I C =ma. _ 9 o MCD7 Fig.6 Common emitter forward transmission coefficient (S ); typical values. 998 Sep 3 8

BFG9A/X 9 o handbook, full pagewidth 3 o 4 o 3 GHz 8 o 4 MHz.4.8..6 o. _ 3 o _ 4 o V CE = V; I C =ma. _ 9 o MCD7 Fig.7 Common emitter reverse transmission coefficient (S ); typical values. handbook, full pagewidth.. + j j.. 4 MHz. 3 GHz. MCD73 V CE = V; I C =ma. Fig.8 Common emitter output reflection coefficient (S ); typical values. 998 Sep 3 9

BFG9A/X SPICE parameters for BFR9A/X die SEQUENCE No. PARAMETER VALUE UNIT IS 4.8 aa BF.6 3 NF 997. m 4 VAF 6.67 V IKF 3. A 6 ISE 4. fa 7 NE.77 8 BR 8. 9 NR 996. m VAR 3.369 V IKR.8 A ISC 79.9 aa 3 NC.7 4 RB. Ω IRB. µa 6 RBM. Ω 7 RE.64 Ω 8 RC.3 Ω 9 (note ) XTB. (note ) EG. ev (note ) XTI 3. CJE 89. ff 3 VJE 6. mv 4 MJE 8. m TF.49 ps 6 XTF 39.4 7 VTF. V 8 ITF 3.7 ma 9 PTF. deg 3 CJC 46. ff 3 VJC 38.8 mv 3 MJC.9 m 33 XCJC. m 34 TR.68 ns 3 (note ) CJS. F SEQUENCE No. PARAMETER VALUE UNIT 36 (note ) VJS 7. mv 37 (note ) MJS. 38 FC 8. m Note. These parameters have not been extracted, the default values are shown. B L Cbe L B QL B = ; QL E =. QL B,E (f) = QL B,E (f/f c ). f c = scaling frequency = MHz. Fig.9 Package equivalent circuit SOT43B. List of components (see Fig.9) B' Ccb MBC964 DESIGNATION VALUE UNIT C be 84 ff C cb 7 ff C ce 9 ff L. nh L. nh L3.6 nh L B.9 nh L E.4 nh E' E C' L E L3 L Cce C 998 Sep 3

BFG9A/X PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT43B D B E A X y v M A H E e b p w M B 4 3 Q A A c b Lp e detail X mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A..9 A max. b p.48.38 b.88.78 c..9 D 3..8 E.4. e.9 e.7 H E.. L p.4. Q..4 v. w y.. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT43B 97--8 998 Sep 3

BFG9A/X DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 998 Sep 3

BFG9A/X NOTES 998 Sep 3 3

BFG9A/X NOTES 998 Sep 3 4

BFG9A/X NOTES 998 Sep 3

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