65V 94A * *G Denotes RoHS Compliant, Pb Free Terminal Finish. CO LMOS Power Semiconductors Super Junction MOSFET T-Max TM Ultra Low R DS(ON) Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche Energy Rated Extreme dv / dt Rated Dual die (parallel) Popular T-MAX Package Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. G D S MAXIMUM RATINGS All Ratings per die: T C = 25 C unless otherwise specif ed. Symbol Parameter UNIT S Drain-Source Voltage 65 Volts Continuous Drain Current @ T C = 25 C 94 Continuous Drain Current @ T C = C 6 M Pulsed Drain Current 2 282 Gate-Source Voltage Continuous 2 Volts P D Total Power Dissipation @ T C = 25 C 833 Watts,T STG Operating and Storage Junction Temperature Range -55 to 5 T L Lead Temperature:.63" from Case for Sec. 26 C dv / dt Drain-Source Voltage slope ( = 48V, = 94A, = 25 C) 5 V/ns I AR Avalanche Current 2 7 E AR Repetitive Avalanche Energy 3 ( Id = 3.5A, Vdd = 5V ) E AS Single Pulse Avalanche Energy ( Id = 3.5A, Vdd = 5V ) 8 mj STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV (DSS) R DS(on) SS I GSS (th) Drain-Source Breakdown Voltage ( = V, = 5μA) Drain-Source On-State Resistance 3 ( = V, = 47A) Zero Gate Voltage Drain Current ( = 65V, = V) Zero Gate Voltage Drain Current ( = 65V, = V, T C = 5 C) Gate-Source Leakage Current ( = ±2V, = V) Gate Threshold Voltage ( =, = 5.8mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 65.3.35. 5 ±2 2. 3 3.9 "COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com Volts Ohms μa na Volts 5-869 Rev D 9-27
DYNAMIC CHARACTERISTICS Symbol Characteristic C iss C oss C rss Q g Q gs Q gd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 4 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions = V = 25V f = MHz = V = 3V = 94A @ 25 C INDUCTIVE SWITCHING = 5V = 4V = 94A @ 25 C MIN TYP MAX UNIT 394 52 229 58 72 234 32 59 498 67 pf nc ns Turn-on Switching Energy 5 Turn-off Switching Energy Turn-on Switching Energy 5 Turn-off Switching Energy INDUCTIVE SWITCHING @ 25 C = 4V, = 5V = 94A, INDUCTIVE SWITCHING @ 25 C = 4V, = 5V = 94A, 2684 4448 339 582 μj SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I S Continuous Source Current (Body Diode) 94 I SM THERMAL CHARACTERISTICS Symbol R θjc R θja 2 Pulsed Source Current (Body Diode) 282 V SD Diode Forward Voltage 4 ( = V, I S = -94A).9.2 Volts r Reverse Recovery Time T j = 25 C 96 = A/μs) 27 ns Q rr Reverse Recovery Charge T j = 25 C 3 = A/μs) 43 μc I RRM Peak Recovery Current T j = 25 C 58 = A/μs) 56 Characteristic Junction to Case Junction to Ambient Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Repetitive avalanche causes additional power losses that can be calculated as P AV = E AR *f. Pulse width tp limited by Tj max. 3 Pulse Test: Pulse width < 38 μs, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the specifications and information contained herein..6 MIN TYP MAX.5 3 UNIT C/W 4 See MIL-STD-75 Method 347 5 Eon includes diode reverse recovery. 6 Maximum 25 C diode commutation speed = di/dt 6A/μs 5-869 Rev D 9-27 Z θjc, THERMAL IMPEDANCE ( C/W).4.2..8.6.4 D =.9.7.5.3.2. Duty Factor D = t /t 2 SINGLE PULSE Peak T.5 J = P DM x Z θjc + T C -5-4 -3-2. RECTANGULAR PULSE DURATION (SECONDS) Figure, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Note: P DM t t 2
Typical Performance Curves I C R, REVERSE BS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 25 2 5 5 4V 5 5 2 25 3 FIGURE 2, Low Voltage Output Characteristics.4 NORMALIZED TO.3.2..9.8.5..5.95..2 &5V = V @ 47A = V 6.5V 6V 5.5V 5V = 2V 4.5V 4 8 2 6 2, DRAIN CURRENT FIGURE 4, R DS (ON) vs Drain Current -5 5 5, Junction Temperature ( C) FIGURE 6, Breakdown Voltage vs Temperature R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 6 4 2 8 6 4 2 9 8 7 6 5 4 3 2 = 25 C = 25 C 2 3 4 5 6 7 8 = -55 C, GATE-TO-SOURCE VOLTAGE (V) FIGURE 3, Transfer Characteristics 25 5 75 25 5 T C, CASE TEMPERATURE (C ) FIGURE 5, Maximum Drain Current vs Case Temperature 3. 2.5 2..5.5 8 > (ON) x R DS (ON)MAX. 25μSEC. PULSE TEST @ <.5 % DUTY CYCLE -5 5 5, JUNCTION TEMPERATURE (C ) FIGURE 7, On-Resistance vs Temperature (TH), THRESHOLD VOLTAGE (NORMALIZED)..9.8.7.6-5 5 5 T C, Case Temperature ( C) FIGURE 8, Threshold Voltage vs Temperature µs µs ms ms ms DC line 8 FIGURE 9, Maximum Safe Operating Area 5-869 Rev D 9-27
Typical Performance Curves C, CAPACITANCE (pf) 6, C iss,, C oss C rss 2 3 4 5 6 FIGURE, Capacitance vs Drain-To-Source Voltage, GATE-TO-SOURCE VOLTAGE (VOLTS) 2 8 6 4 2 = 94A = 3V = 325V = 52V 2 4 6 8 Q g, TOTAL GATE CHARGE (nc) FIGURE, Gate Charges vs Gate-To-Source Voltage 7 R, REVERSE DRAIN CURRENT = +5 C = =25 C and (ns) 6 5 4 3 2 = 4V = 4.3 Ω = 25 C L = μh, and (ns).3.5.7.9..3.5 V SD, SOURCE-TO-DRAIN VOLTAGE (V) FIGURE 2, Source-Drain Diode Forward Voltage 5 5 V = 4V DD R G T = 25 C J L = μh SWITCHING ENERGY (μj) 2 8 6 4 4 8 2 6 FIGURE 3, Delay Times vs Current = 4V = 25 C L = μh E ON includes diode reverse recovery. 5 2 4 8 2 6 FIGURE 4, Rise and Fall Times vs Current 25 5 75 25 5 FIGURE 5, Switching Energy vs Current 5-869 Rev D 9-27 SWITCHING ENERGY (uj) 8 6 4 2 8 6 4 2 V = 4V DD I = 94A D T = 25 C J L = μh E ON includes diode reverse recovery. 2 3 4 5, GATE RESISTANCE (Ohms) FIGURE 6, Switching Energy vs Gate Resistance
% Gate Voltage T = 25 C 9% Gate Voltage = 25 C Collector Current Collector Current 9% 9% 5% % Switching Energy 5 % Collector Voltage Collector Voltage Switching Energy % Figure 7, Turn-on Switching Waveforms and Definitions Figure 8, Turn-off Switching Waveforms and Definitions 75DQ6 APT3DF6 I C V CE G D.U.T. Figure Figure 9, 2, Inductive Inductive Switching Test Test Circuit Circuit T-MAX (B2) Package Outline e SAC: Tin, Silver, Copper 4.69 (.85) 5.3 (.29).49 (.59) 2.49 (.98) 5.49 (.6) 6.26 (.64) 5.38 (.22) 6.2 (.244) Drain 2.8 (.89) 2.46 (.845).4 (.6).79 (.3) 2.2 (.87) 2.59 (.2) 4.5 (.77) Max. 9.8 (.78) 2.32 (.8). (.4).4 (.55) 5.45 (.25) BSC 2-Plcs. 2.87 (.3) 3.2 (.23).65 (.65) 2.3 (.84) Gate Drain Source These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 5-869 Rev D 9-27