MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves Straight Lead Version in Plastic Sleeves ( Suffix) Lead Formed Version in 6 mm Tape and Reel ( T4 Suffix) Electrically Similar to Popular TIP3 and TIP3 Series Epoxy Meets UL 94, V @ 5 in ESD Ratings: Human Body Model, 3B 8 V Machine Model, C 4 V These are Pb Free Packages MAXIMUM RATINGS Rating Symbol Max Unit Collector Emitter Voltage V CEO Vdc MJD3, MJD3 4 MJD3C, MJD3C Collector Base Voltage MJD3, MJD3 MJD3C, MJD3C V CB 4 Vdc Emitter Base Voltage V EB 5 Vdc Collector Current Continuous I C 3 Adc Peak 5 Base Current I B Adc Total Power Dissipation @ T C = Derate above Total Power Dissipation @ T A = Derate above Operating and Storage Junction Temperature Range P D 5 P D.56. T J, T stg 65 to +5 W W/ C W W/ C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC 8.3 C/W Thermal Resistance, Junction to Ambient* R JA 8 C/W Lead Temperature for Soldering Purposes T L 6 C *These ratings are applicable when surface mounted on the minimum pad sizes recommended. C 3 3 SILICON POWER TRANSISTORS 3 AMPERES 4 AND VOLTS 5 WATTS 4 4 CASE STYLE 3 CASE 369D STYLE A Y WW xx G MARKING DIAGRAMS AYWW J3xxG YWW J3xxG = Site Code = Year = Work Week =, C,, or C = Pb Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Semiconductor Components Industries, LLC, February, Rev. 8 Publication Order Number: MJD3/D
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Î ELECTRICAL CHARACTERISTICS (T Î C = 5 C unless otherwise noted) Characteristic Symbol Min Max Î Unit Î OFF CHARACTERISTICS Î Collector Emitter Sustaining Voltage (Note ) V CEO(sus) Vdc (I C = 3 madc, I B = ) MJD3, MJD3 Î 4 MJD3C, MJD3C Î Collector Cutoff Current ÎÎ I CEO 5 Adc (V CE = 4 Vdc, I B = ) MJD3, MJD3 ÎÎ (V CE = 6 Vdc, I B = ) MJD3C, MJD3C ÎÎ Collector Cutoff Current ÎÎ ICES (V CE = Rated V CEO, V EB = ) Adc Emitter Cutoff Current ÎÎ I EBO (V BE = 5 Vdc, I C = ) Î madc Î ON CHARACTERISTICS (Note ) Î DC Current Gain h (I C = Adc, V CE ÎÎ FE = 4 Vdc) (I C = 3 Adc, V CE = 4 Vdc) Î 5 5 Collector Emitter Saturation Voltage V (I C = 3 Adc, I B = 375 madc) ÎÎ CE(sat). Vdc Î Base Emitter On Voltage V (I C = 3 Adc, V CE ÎÎ BE(on).8 Vdc = 4 Vdc) Î DYNAMIC CHARACTERISTICS Î Current Gain Bandwidth Product (Note ) ÎÎ f T (I C = 5 madc, V CE = Vdc, f test = MHz) Î 3 MHz Î Small Signal Current Gain h fe (I C = Adc, V CE = Vdc, f = khz) Î. Pulse Test: Pulse Width 3 s, Duty Cycle %.. f T = h fe f test.
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) T A.5 T C 5 TYPICAL CHARACTERISTICS V CC + 3 V PD, POWER DISSIPATION (WATTS).5 5 5 5 T A (SURFACE MOUNT) T C 5 75 5 5 T, TEMPERATURE ( C) + V - 9 V 5 s t r, t f ns DUTY CYCLE = % 5 R B - 4 V D R C SCOPE R B and R C VARIED TO OBTAIN DESIRED CURRENT LEVELS D MUST BE FAST RECOVERY TYPE, e.g.: N585 USED ABOVE I B ma MSD6 USED BELOW I B ma REVERSE ALL POLARITIES FOR PNP. Figure. Power Derating Figure. Switching Time Test Circuit t, TIME ( s) μ. t r @ V CC = 3 V t r @ V CC = V I C /I B = T J = t, TIME ( s) μ 3 t f @ V CC = 3 V t f @ V CC = V t s I B = I B I C /I B = t s = t s - /8 t f T J =.7 t d @ V BE(off) = V..5.7.3.5..3.5.7..3.3.5.7. 3 I C, COLLECTOR CURRENT (AMPS) I C, COLLECTOR CURRENT (AMPS) Figure 3. Turn On Time Figure 4. Turn Off Time r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)..7.5.3... D =..5. SINGLE PULSE R JC(t) = r(t) R JC R JC = 8.33 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) - T C = P (pk) JC(t)..3.5. 3 5 3 5 3 5 t, TIME (ms) Figure 5. Thermal Response P (pk) t t DUTY CYCLE, D = t /t k 3
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) TYPICAL CHARACTERISTICS MJD3, MJD3C (NPN) 5 C V CE = 4 V 5 C V CE = V h FE, DC CURRENT GAIN h FE, DC CURRENT GAIN V CE(sat), COLL EMITT SATURATION VOLTAGE (V).. Figure 6. DC Current Gain at V CE = 4 V.6. I C /I B = 5 C... Figure 8. Collector Emitter Saturation Voltage V BE(sat), BASE EMITT SATURATION VOLTAGE (V).. Figure 7. DC Current Gain at V CE = V.. I C /I B =..9.8.6 5 C... Figure 9. Base Emitter Saturation Voltage V BE(on), BASE EMITTER ON VOLTAGE (V). V CE = 5 V...9.8.6 5 C... Figure. Base-Emitter On Voltage V CE, COLLECTOR EMITTER VOLTAGE (V).6..8 ma 5 ma A I C = 3 A T A = ma.. I B, BASE CURRENT (ma) Figure. Collector Saturation Region 4
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) TYPICAL CHARACTERISTICS MJD3, MJD3C (NPN) C, CAPACITANCE (pf) C ib C ob T A =. V R, REVERSE VOLTAGE (V) Figure. Capacitance f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) V CE = 5 V T A =... Figure 3. Current Gain Bandwidth Product.. V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 4. Safe Operating Area 5
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) TYPICAL CHARACTERISTICS MJD3, MJD3C (PNP) 5 C V CE = 4 V 5 C V CE = V h FE, DC CURRENT GAIN h FE, DC CURRENT GAIN.. Figure 5. DC Current Gain at V CE = 4 V.. Figure 6. DC Current Gain at V CE = V V CE(sat), COLL EMITT SATURATION VOLTAGE (V) V BE(on), BASE EMITTER ON VOLTAGE (V).9 I C /I B = 5 C.8.6........9.8.6 Figure 7. Collector Emitter Saturation Voltage V CE = 5 V 5 C... Figure 9. Base Emitter On Voltage V BE(sat), BASE EMITTER SATURATION VOLTAGE (V) V CE, COLLECTOR EMITTER VOLTAGE (V).4...8.6 I C /I B = 5 C....6..8 Figure 8. Base Emitter Saturation Voltage ma 5 ma A I C = 3 A T A = ma.. I B, BASE CURRENT (ma) Figure. Collector Saturation Region 6
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) TYPICAL CHARACTERISTICS C, CAPACITANCE (pf) C ib C ob T A =. V R, REVERSE VOLTAGE (V) Figure. Capacitance f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) V CE = 5 V T A =... Figure. Current Gain Bandwidth Product. s ms. V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 3. Safe Operating Area 7
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) ORDERING INFORMATION MJD3CG Device Package Type Package Shipping 75 Units / Rail MJD3CG 3 369D 75 Units / Rail MJD3CRLG 8 Tape & Reel MJD3CT4G 5 Tape & Reel MJD3T4G 5 Tape & Reel MJD3CG 75 Units / Rail MJD3CRLG 8 Tape & Reel MJD3CT4 5 Tape & Reel MJD3CT4G 5 Tape & Reel MJD3RLG 8 Tape & Reel MJD3T4G 5 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 8
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) PACKAGE DIMENSIONS CASE ISSUE D L3 L4 b e E b3 4 3 b A D B DETAIL A c.5 () M C A C c H L GAUGE PLANE L L DETAIL A ROTATED 9 CW SOLDERING FOOTPRINT* 6. 44.58. A H 3..8 C Z SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, 994.. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED.6 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.86.94.8.38 A..5. b.5.35.63.89 b.3.45 6.4 b3.8 5 4.57 5.46 c.8.4 6.6 c.8.4 6.6 D 35 45 5.97 6. E 5 65 6.35 6.73 e.9 BSC.9 BSC H 7 9.4 L.55.7.4.78 L.8 REF.74 REF L. BSC BSC L3.35.5.89.7 L4.4. Z 5 3.93 STYLE : PIN. BASE. COLLECTOR 3. EMITTER 4. COLLECTOR 5.8 8.6.63 6.7 43 SCALE 3: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 9
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C V B R C E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH. S T SEATING PLANE F 4 3 G A K D 3 PL J (.5) M T H Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A 35 45 5.97 6.35 B 5 65 6.35 6.73 C.86.94.9.38 D.7.35.69.88 E.8.3 6 8 F.37.45.94.4 G.9 BSC.9 BSC H.34.4.87. J.8.3 6 8 K 5 8 8.89 9.65 R.8 5 4.45 5.45 S.5.4.63. V.35.5.89.7 Z 5 3.93 STYLE : PIN. BASE. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 87 USA Phone: 33 675 75 or 8 344 386 Toll Free USA/Canada Fax: 33 675 76 or 8 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 8 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 4 33 79 9 Japan Customer Focus Center Phone: 8 3 5773 385 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJD3/D