EF Series Power MOSFET with Fast Body Diode SiHA21N6EF ThinLead TO22 FULLPAK PRODUCT SUMMARY S D G NChannel MOSFET (V) at T J max. 65 R DS(on) max. () at 25 C V GS = 1 V.176 Q g max. (nc) 84 Q gs (nc) 14 Q gd (nc) 24 Configuration Single ORDERING INFORMATION Package Lead (Pb)free Lead (Pb)free and halogenfree G D S FEATURES Fast body diode MOSFET using E series technology Reduced t rr, Q rr, and I RRM Low figureofmerit (FOM): R on x Q g Low input capacitance (C iss ) Increased robustness due to low Q rr Available Ultra low gate charge (Q g ) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Telecommunications Server and telecom power supplies Lighting High intensity discharge (HID) Light emitting diodes (LEDs) Consumer and computing ATX power supplies Industrial Welding Battery chargers Renewable energy Solar (PV inverters) Switch mode power suppliers (SMPS) Applications using the following topologies LLC Phase shifted bridge (ZVS) 3level inverter AC/DC bridge ThinLead TO22 FULLPAK SiHA21N6EFE3 SiHA21N6EFGE3 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drainsource voltage 6 Gatesource voltage V GS ± 3 V Continuous drain current (T J = 15 C) V GS at 1 V T C = 25 C 21 I D T C = 1 C 14 A Pulsed drain current a I DM 53 Linear derating factor.28 W/ C Single pulse avalanche energy b E AS 367 mj Maximum power dissipation P D 35 W Operating junction and storage temperature range T J, T stg 55 to 15 C Drainsource voltage slope T J = 125 C 7 dv/dt Reverse diode dv/dt d 5 V/ns Soldering recommendations (peak temperature) c for 1 s 3 C Mounting torque M3 screw.6 Nm Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. V DD = 5 V, starting T J = 25 C, L = 28.2 mh, R g = 25, I AS = 5.1 A c. 1.6 mm from case d. I SD I D, di/dt = 9 A/μs, starting T J = 25 C S17137Rev. E, 21Aug17 1 Document Number: 91597 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
SiHA21N6EF THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum junctiontoambient R thja 65 Maximum junctiontocase (drain) R thjc 3.6 C/W SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drainsource breakdown voltage V GS = V, I D = 25 μa 6 V temperature coefficient /T J Reference to 25 C, I D = 1 ma.59 V/ C Gatesource threshold voltage (N) V GS(th) = V GS, I D = 25 μa 2. 4. V Gatesource leakage I GSS V GS = ± 2 V ± 1 na V GS = ± 3 V ± 1 μa = 48 V, V GS = V 1 Zero gate voltage drain current I DSS = 48 V, V GS = V, T J = 125 C 5 μa Drainsource onstate resistance R DS(on) V GS = 1 V I D = 11 A.153.176 Forward transconductance g fs = 3 V, I D = 11 A 7 S Dynamic Input capacitance C iss V GS = V, 23 Output capacitance C oss = 1 V, 15 Reverse transfer capacitance C rss f = 1 MHz 5 Effective output capacitance, energy pf related a C o(er) 86 V GS = V, = V to 48 V Effective output capacitance, time related b C o(tr) 299 Total gate charge Q g 56 84 Gatesource charge Q gs V GS = 1 V I D = 11 A, = 48 V 14 nc Gatedrain charge Q gd 24 Turnon delay time t d(on) 21 42 Rise time t r V DD = 48 V, I D = 11 A 31 62 Turnoff delay time t d(off) R g = 9.1, V GS = 1 V 59 89 ns Fall time t f 27 54 Gate input resistance R g f = 1 MHz, open drain.2.56 1.2 DrainSource Body Diode Characteristics MOSFET symbol D Continuous sourcedrain diode current I S 21 showing the G integral reverse Pulsed diode forward current I SM S 53 p n junction diode A Diode forward voltage V SD T J = 25 C, I S = 11 A, V GS = V.9 1.2 V Reverse recovery time t rr 135 27 ns Reverse recovery charge Q rr T J = 25 C, I F = I S = 11 A, di/dt = 1 A/μs, V R = 4 V.76 1.52 μc Reverse recovery current I RRM 11 A Notes a. C oss(er) is a fixed capacitance that gives the same energy as C oss while is rising from % to 8 % b. C oss(tr) is a fixed capacitance that gives the charging time as C oss while is rising from % to 8 % S17137Rev. E, 21Aug17 2 Document Number: 91597 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
SiHA21N6EF TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) I D, DraintoSource Current (A) 6 45 3 15 TOP 15 V 14 V 13 V 12 V 11 V 1 V 9 V 8 V 7 V 6 V BOTTOM 5 V T J = 25 C R DS(on), DraintoSource OnResistance (Normalized) 3. 2.5 2. 1.5 1..5 I D = 11 A V GS = 1 V 5 1 15 2 25 3, DraintoSource Voltage (V) 6 4 2 2 4 6 8 1 12 14 16 T J, Junction Temperature ( C) Fig. 1 Typical Output Characteristics, T J = 25 C Fig. 4 Normalized OnResistance vs. Temperature I D, DraintoSource Current (A) 4 3 2 1 TOP 15 V 14 V 13 V 12 V 11 V 1 V 9 V 8 V 7 V 6 V BOTTOM 5 V T J = 15 C C, Capacitance (pf) 1 1 1 1 C iss C oss C rss V GS = V, f = 1 MHz C iss = C gs C gd, C ds shorted C rss = C gd C oss = C ds C gd 5 1 15 2 25 3, DraintoSource Voltage (V) 1 1 2 3 4 5 6, DraintoSource Voltage (V) Fig. 2 Typical Output Characteristics, T J = 15 C Fig. 5 Typical Capacitance vs. DraintoSource Voltage 6 14 I D, DraintoSource Current (A) 45 3 15 T J = 25 C T J = 15 C = 29.2 V C oss (pf) 5 5 C oss E oss 12 1 8 6 4 2 E oss (μj) 5 1 15 2 25 V GS, GatetoSource Voltage (V) 5 1 2 3 4 5 6 Fig. 3 Typical Transfer Characteristics Fig. 6 C oss and E oss vs. S17137Rev. E, 21Aug17 3 Document Number: 91597 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
SiHA21N6EF V GS, GatetoSource Voltage (V) 24 2 16 12 8 4 = 48 V = 3 V = 12 V I D, Drain Current (A) 25 2 15 1 5 3 6 9 12 Q g, Total Gate Charge (nc) 25 5 75 1 125 15 T C, Case Temperature ( C) Fig. 7 Typical Gate Charge vs. GatetoSource Voltage Fig. 1 Maximum Drain Current vs. Case Temperature 1 75 I SD, Reverse Drain Current (A) T J = 15 C 1 T J = 25 C 1 V GS = V.1.2.4.6.8 1. 1.2 1.4 V SD, SourceDrain Voltage (V), DraintoSource Breakdown Voltage (V) 725 7 675 65 625 6 575 I D = 25 μa 55 6 4 2 2 4 6 8 1 12 14 16 T J, Junction Temperature ( C) Fig. 8 Typical SourceDrain Diode Forward Voltage Fig. 11 Typical DraintoSource Voltage vs. Temperature 1 Operation in this Area Limited by R DS(on) I DM Limited I D, Drain Current (A) 1 1 Limited by R DS(on) * 1 μs 1 ms.1.1 T C = 25 C T J = 15 C Single Pulse BVDSS Limited 1 ms 1 1 1 1, DraintoSource Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Fig. 9 Maximum Safe Operating Area S17137Rev. E, 21Aug17 4 Document Number: 91597 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
SiHA21N6EF 1 Duty Cycle =.5 Normalized Effective Transient Thermal Impedance.1.1.2.5.2.1 Single Pulse.1.1.1.1 1 Pulse Time (s) Fig. 12 Normalized Thermal Transient Impedance, JunctiontoCase R D t p V GS D.U.T. V DD R G V DD 1 V Pulse width 1 µs Duty factor.1 % I AS Fig. 13 Switching Time Test Circuit Fig. 16 Unclamped Inductive Waveforms 9 % 1 V Q G Q GS Q GD 1 % V GS t d(on) t r t d(off) t f V G Charge Fig. 14 Switching Time Waveforms Fig. 17 Basic Gate Charge Waveform Vary t p to obtain required I AS L Current regulator Same type as D.U.T. 5 kω R G 1 V t p I AS D.U.T.1 Ω V DD 12 V V GS.2 µf.3 µf D.U.T. V DS 3 ma Fig. 15 Unclamped Inductive Test Circuit I G I D Current sampling resistors Fig. 18 Gate Charge Test Circuit S17137Rev. E, 21Aug17 5 Document Number: 91597 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
SiHA21N6EF Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. device under test V DD Driver gate drive P.W. Period D = P.W. Period V GS = 1 V a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. V GS = 5 V for logic level devices Fig. 19 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91597. S17137Rev. E, 21Aug17 6 Document Number: 91597 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
Package Information TO22 FULLPAK Thin Lead E n Ø P d2 A A1 d3 d1 D L2 b2 x 3 L1 b x 3 e c A2 DIMENSIONS SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.3 4.7.169.185 A1 2.5 2.9.98.114 A2 2.5 2.7.98.16 b.6.8.24.31 b2.6.9.24.35 c.6.24 D 8.3 8.7.327.342 d1 14.7 15.3.579.62 d2 2.9 3.1.114.122 d3 3.4 3.6.134.142 E 9.7 1.3.382.46 e 2.5 2.7.98.16 L 13.4 13.8.528.543 L1 2.5 2.8.98.11 L2 1.2.47 n 6.5 6.15.238.242 Ø P 3. 3.4.118.134 ECN: T16549Rev. C, 12Sep16 DWG: 621 Revision: 12Sep16 1 Document Number: 62649 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
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