HEXFRED Ultrafast Soft Recovery Diode, 4 A VS-HFA4FA SOT-7 PRIMARY CHARACTERISTICS V R V V F (typical).8 V t rr (typical) 48 ns I F(DC) at T C, per module 4 A at 74 C I F(AV) at T C, per module 4 A at 46 C Package SOT-7 FEATURES Fast recovery time characteristic Electrically isolated base plate Large creepage distance between terminal Simplified mechanical designs, rapid assembly Designed and qualified for industrial level UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?999 DESCRIPTION / APPLICATIONS The dual diode series configuration VS-HFA4FA is used for output rectification or freewheeling/clamping operation and high voltage application. The semiconductor in the SOT-7 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage V R V Continuous forward current per leg 7 I F T C = 74 C per module 4 A Single pulse forward current I FSM 35 T C = 5 C 357 Maximum power dissipation, per leg P D T C = C 43 W RMS isolation voltage V ISOL Any terminal to case, t = minute 5 V Operating junction and storage temperature range T J, T Stg -55 to +5 C ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage V BR I R = μa - - Forward voltage, per leg V FM I F = 6 A -.8 4. I F = A - 3.6 5.3 I F = 6 A, -.7 - I F = 6 A, T J = 5 C -.65 - Reverse leakage current, per leg I RM V R = V R rated -. 75 μa, V R = V R rated -.6 5 ma T J = 5 C, V R = V R rated - 5 V Revision: 5-Jan-8 Document Number: 94746 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-HFA4FA DYNAMIC RECOVERY CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Reverse recovery time, per leg t rr - 45 - ns I F = A; di F /dt = A/μs; V R = 3 V - 48 - - 8 - I F = 5 A - 3 - Peak recovery current, per leg I RRM di F /dt = - A/μs A - 8 - V R = V - 9 - Reverse recovery charge, per leg Q rr nc - 9 - Junction capacitance, per leg C T V R = V - 7 - pf THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction to case, single leg conducting - -.35 R thjc Junction to case, both legs conducting - -.75 C/W Case to heatsink R thcs Flat, greased surface -.5 - Weight - 3 - g Mounting torque Torque to terminal - -. (9.7) Nm (lbf.in) Torque to heatsink - -.8 (5.9) Nm (lbf.in) Case style SOT-7 I F - Instantaneous Forward Current (A) T J = 5 C.5..5..5 3. 3.5 4. 4.5 5. V FM - Forward Voltage Drop (V) Fig. - Typical Forward Voltage Drop Characteristics I R - Reverse Current (µa) T J = 5 C.. 4 6 8 V R - Reverse Voltage (V) Fig. - Typical Values of Reverse Current vs. Reverse Voltage C T - Junction Capacitance (pf) V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 5-Jan-8 Document Number: 94746 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-HFA4FA Z thjc - Thermal Impedance ( C/W). D =.75 D =.5 D =.33 D =.5 D =. DC Notes:. Duty factor D = t /t. Peak T J = P DM x Z thjc + T C..... t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics (Per Leg) P DM t t Allowable Case Temperature ( C) 75 5 5 75 5 5 Square wave (D =.5) 8 % rated V R applied DC 4 6 8 t rr (ns) 3 5 5 I F = 5 A V R = V 5 I F(AV) - Average Forward Current (A) di F /dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. di F /dt Average Power Loss (W) 5 4 3 DC RMS limit D =. D =.5 D =.33 D =.5 D =.75 4 6 8 4 I F(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Note () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = forward power loss = I F(AV) x V FM at (I F(AV) /D) (see fig. 5); Pd REV = inverse power loss = V R x I R ( - D); I R at V R = rated V R Q rr (nc) 3 5 5 5 I F = 5 A V R = V di F /dt (A/µs) Fig. 8 - Typical Stored Charge vs. di F /dt Revision: 5-Jan-8 3 Document Number: 94746 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-HFA4FA 4 3 I F = 5 A V R = V I rr (A) di F /dt (A/µs) Fig. 9 - Typical Peak Recovery Current vs. di F /dt V R = V L = 7 μh. Ω D.U.T. di F /dt adjust G D IRFP5 S Fig. - Reverse Recovery Parameter Test Circuit (3) t rr I F t a tb () I RRM (4) Q rr.5 I RRM di (rec)m /dt (5).75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing () I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Revision: 5-Jan-8 4 Document Number: 94746 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-HFA4FA ORDERING INFORMATION TABLE Device code VS- HF A 4 F A 3 4 5 6 7 3 4 5 6 7 - product - HEXFRED family - Process designator (A = electron irradiated) - Average current (4 = 4 A) - Circuit configuration (two separate diodes, parallel pin-out) - Package indicator (SOT-7 standard insulated base) - Voltage rating ( = V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment Two separate diodes, parallel pin-out F 4 3 4 3 Dimensions Part marking information LINKS TO RELATED DOCUMENTS www.vishay.com/doc?9543 www.vishay.com/doc?9545 Revision: 5-Jan-8 5 Document Number: 94746 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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