GaAs MMIC Power Amplifier

Similar documents
GaAs MMIC Power Amplifier

GaAs MMIC Power Amplifier

PCS Base Station High output power, P1dB = 38 dbm. GPS Applications High gain > 20 db. WLAN Repeaters Efficiency > 30%

GaAs MMIC Power Amplifier

GaAs MMIC Power Amplifier

AM002535MM-BM-R AM002535MM-FM-R

GaAs MMIC Power Amplifier

AM003536WM-BM-R AM003536WM-FM-R

AM153540WM-BM-R AM153540WM-EM-R AM153540WM-FM-R

AM003536WM-BM-R AM003536WM-EM-R AM003536WM-FM-R

GaAs MMIC Power Amplifier

Gallium Nitride MMIC Power Amplifier

GaAs MMIC Power Amplifier

Gallium Nitride MMIC Power Amplifier

Gallium Nitride MMIC 15W GHz Power Amplifier

GaAs MMIC Power Amplifier for VSAT & ITU Applications

GaAs MMIC Power Amplifier

Gallium Nitride MMIC 15W GHz Power Amplifier

GaAs MMIC Power Amplifier

50MHz 3.0GHz Gallium Nitride MMIC Power Amplifier

Gallium Nitride MMIC 5W DC 10.0 GHz Power Amplifier

Ceramic Packaged GaAs Power phemt DC-10 GHz

Ceramic Packaged GaAs Power phemt DC-12 GHz

it to 18 GHz, 2-W Amplifier

Features. = +25 C, Vdd = +5V, Idd = 400mA [1]

Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*

Features. = +25 C, Vdd = +7V, Idd = 1340 ma [1]

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]

HMC486LP5 / 486LP5E LINEAR & POWER AMPLIFIERS - SMT. SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7-9 GHz. Typical Applications.

6-18 GHz Low Phase Noise Amplifier

SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER,

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V

GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E

HMC5805ALS6 AMPLIFIERS - LINEAR & POWER - SMT. Typical Applications. Features. Functional Diagram

2 GHz to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC7950

MMA GHz 4W MMIC Power Amplifier Data Sheet

OBSOLETE HMC5846LS6 AMPLIFIERS - LINEAR & POWER - SMT. Electrical Specifications, T A. Features. Typical Applications. General Description

MMA M GHz 4W MMIC Power Amplifier Data Sheet

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 45 ma

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 70 ma

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

CMD187C GHz Driver Amplifier. Features. Functional Block Diagram. Description

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vdd= 8V, Idd= 75 ma*

Features. Output Power for 1 db Compression (P1dB) dbm Saturated Output Power (Psat) dbm

HMC659LC5 LINEAR & POWER AMPLIFIERS - SMT. GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz. Features. Typical Applications. General Description

MAAP PKG003 YYWW AP067G XXX MACOM. Amplifier, Power, 2W GHz. Primary Applications: M/A-COM Products Rev D. Features.

Features. = +25 C, Vdd =+28V, Idd = 850 ma [1]

Features. = +25 C, Vdd 1, 2, 3 = +3V

Features = +5V. = +25 C, Vdd 1. = Vdd 2

CMD283C GHz Ultra Low Noise Amplifier. Features. Functional Block Diagram. Description

HMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram

>10 W, GaN Power Amplifier, 0.01 GHz to 1.1 GHz HMC1099

Features: Applications: Description: Absolute Maximum Ratings: (Ta= 25 C)* 28-31GHz 2.5W MMIC Power Amplifier Preliminary Data Sheet

Features. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain

10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz HMC1114

MMA M GHz, 1W MMIC Power Amplifier Data Sheet

HMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications

Features. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain

Features. = +25 C, Vdd = +4V, Idd = 90 ma [2]

Features. = +25 C, Vdd = +10 V, Idd = 350 ma

Features. = +25 C, Vdd= +12V, Vgg2= +5V, Idd= 400 ma*

MMA M GHz, 3W Power Amplifier Data Sheet

10W Ultra-Broadband Power Amplifier

Gain Control Range db

MMA M GHz, 2W Power Amplifier Data Sheet

TEL: FAX: v.117 HMC3 / 3E GENERAL PURPOSE 1 mw GaAs MMIC AMPLIFIER, GHz Broadband Gain & Return Vdd =

MMA C3 6-22GHz, 0.1W Gain Block Data Sheet

Features

27-31 GHz 2W Balanced Power Amplifier TGA4513-CP

MMA GHz, 1W MMIC Power Amplifier Data Sheet March, 2012

MMA R GHz, 0.1W Gain Block Data Sheet October, 2012

2-20 GHz Driver Amplifier

RFMA7185-2W GHz Power Amplifier MMIC

CMD158C GHz Driver Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 5.0 V, T A = 25 o C, F = 11 GHz

CMD233C GHz Distributed Low Noise Amplifier. Features. Functional Block Diagram. Description

1-24 GHz Distributed Driver Amplifier

Parameter Min. Typ. Max. Units Frequency Range GHz

XP1080-QU-EV1. Power Amplifier GHz. Functional Schematic. Features. Description. Pin Configuration 1. Ordering Information. Rev.

2 3 ACG1 ACG2 RFIN. Parameter Min Typ Max Units Frequency Range

Features OBSOLETE. = +25 C, as a function of Vdd. Vdd = +3V Vdd = +5V Vdd = +5V Vdd = +5V Parameter

Features. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]

Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]

HMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

MMA R GHz 4W MMIC Power Amplifier Data Sheet Old package not recommended for new designs

CMD217. Let Performance Drive GHz GaN Power Amplifier

17-35GHz MPA/Multiplier TGA4040SM

HMC1040LP3CE. Amplifiers - Low Noise - smt. GaAs phemt MMIC LOW NOISE AMPLIFIER, GHz. Features. Typical Applications. General Description

2 3 ACG1 ACG2 RFIN. Parameter Min Typ Max Units Frequency Range

20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS

MMA M4. Features:

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vdd = 5V

CMD170P GHz Driver Amplifier. Features. Functional Block Diagram. Description

GaAs phemt MMIC Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049

Features. = +25 C, Vdd= 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz

TGA2521-SM GHz Linear Driver Amplifier Key Features Measured Performance

2 GHz to 30 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC8402

Transcription:

GaAs MMIC Power Amplifier AM14MM-BM-R AM14MM-FM-R Aug 10 Rev 8 DESCRIPTION AMCOM s is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to 2.5GHz. The MMIC output requires partial external matching to your band of interest between 1.4GHz to 2.5GHz to provide maximum bandwidth flexibility. The output matching can be designed to cover any 0MHz bandwidth in the 1.4 to 2.5GHz band. As an example, one of the available evaluation boards has over db gain, 10 watts (dbm) saturated output power over the 1.4 to 1.8GHz band at 14V. The other evaluation board for 2.1 to 2.5GHz achieved 23dB gain and 37dBm output power at 12V. This MMIC is in a ceramic package with both RF and DC leads at the lower level of the package to facilitate low-cost SMT assembly to the PC board. When mounting directly to PCB, please see application note AN700 for instructions. Because of high DC power dissipation, we strongly recommend to mount these devices directly on a metal heat sink. The AM14MM-FM-R is the AM14MM-BM-R mounted on a gold plated copper flange carrier. There are two screw holes on the flange to facilitate screwing on to a metal heat sink. This MMIC is RoHS compliant. FEATURES Frequency applications from 1.4 to 2.6GHz High output power, P1dB = 39dBm High gain > db Input matched from 1.4GHz to 2.5GHz Can cover 0MHz bandwidth in the 1.4GHz to 2.5GHz band by adjusting output matching APPLICATIONS PCS Base Station GPS Applications MMDS WLAN Repeaters 14V Applications TYPICAL PERFORMANCE* a) TEST BOARD FOR 1.4 to 1.8GHz V dd = +14V, Vgs = -0.86V**, I dq = 1500mA, T a = C Parameters Minimum Typical Maximum Frequency 1.4 1.8GHz Small Signal 22dB db Ripple ± 1.0dB ± 2.0dB P1dB 37.0dBm 39.0dBm Psat 37.5dBm.0dBm IP3 51dBm Efficiency @ P1dB % Input Return Loss 15dB db Output Return Loss 15dB 5 C/W Tel. (1) 3-80 Fax. (1) 3-81 Website: www.amcomusa.com 1 Professional Drive, Gaithersburg, MD 879

Aug 10, Rev 8 Typical Performance at V dd = 8V, 10V & 14V, Vgs = -0.86V, I dq = 1500mA, T a = C Parameters V dd = +8V V dd = +10V V dd = +14V Frequency 1.4 1.8GHz 1.4 1.8GHz 1.4 1.8GHz Small Signal 27dB 26dB db Ripple ± 1.0dB ± 1.0dB ± 1.0dB P1dB 36.0dBm 37.5dBm 39.0dBm Psat 37.0dBm 38.5dBm.0dBm IP3 49dBm 50dBm 51dBm Efficiency @ P1dB % % % Input Return Loss db db db Output Return Loss 15dB 15dB 15dB Thermal Resistance 5 C/W 5 C/W 5 C/W b) TEST BOARD FOR 2.1 to 2.5GHz Performance at V dd = +12V, Vgs = -0.68V**, I dq = 1700mA, T a = C Parameters Minimum Typical Maximum Frequency 2.1 2.5GHz Small Signal db 23dB Ripple ± 2.0dB ± 3.0dB P1dB dbm 36dBm Psat 36.0dBm 37dBm IP3 51dBm Efficiency @ P1dB % Input Return Loss 10dB 15dB Output Return Loss 10dB Thermal Resistance 5 C/W Typical Performance at V dd = 8V, 10V & 12V, Vgs = -0.68V I dq = 1700mA, T a = C Parameters V dd = +8V V dd = +10V V dd = +12V Frequency 2.1 2.5GHz 2.1 2.5GHz 2.1 2.5GHz Small Signal db 24dB 23dB Ripple ± 2.0dB ± 2.0dB ± 2.0dB P1dB dbm.5dbm 36dBm Psat 36.0dBm 36.5dBm 37dBm IP3 47dBm 49dBm 51dBm Efficiency @ P1dB 28% % % Input Return Loss 15dB 15dB 15dB Output Return Loss 10dB 10dB 10dB Thermal Resistance 5 C/W 5 C/W 5 C/W *Specifications subject to change without notice. **V gs value is for reference only and may vary from lot to lot. Tel. (1) 3-80 Fax. (1) 3-81 Website: www.amcomusa.com 1 Professional Drive, Gaithersburg, MD 879

Aug 10, Rev 8 ABSOLUTE MAXIMUM RATING Parameters Symbol Rating Drain source voltage V dd 17V Gate source voltage V gg -5V Drain source current I dd 2.0A Continuous dissipation at room temperature P t W Channel temperature T ch 175 C Storage temperature T sto -55 C to +1 C NEGATIVE CURRENT REQUIREMENT In order to maximize the bandwidth and linearity, this product has built-in feedback resistors on-chip. The product will draw negative current in the V gg circuit through these resistors. The Table below shows the negative current values. The typical negative currents for different V dd are shown in the table below. The actual V gg should be adjusted to have an I dd of about 1.5A. The actual negative current value varies depending on V gg and may also vary due to MMIC process variation. Typical Negative Currents Variation vs Positive Bias Parameters V dd = 10V V dd = 12V V dd = 14V V gg - 1V - 1V - 1V I gg1 (ma) 18 22 I gg2 (ma) 56 66 76 Total I gg (ma) 74mA 88mA 101mA Tel. (1) 3-80 Fax. (1) 3-81 Website: www.amcomusa.com 1 Professional Drive, Gaithersburg, MD 879

Aug 10, Rev 8 SMALL SIGNAL DATA & Return Losses (db) 15 10 5 0-5 -10-15 Output RL 1.4-1.8GHz Test Circuit - - Input RL - 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 Frequency (GHz) 2.1-2.5 GHz Test Circuit & Return Losses (db) 15 10 5 0-5 -10-15 - - Output RL Input RL - 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 Frequency (MHz) Tel. (1) 3-80 Fax. (1) 3-81 Website: www.amcomusa.com 1 Professional Drive, Gaithersburg, MD 879

Aug 10, Rev 8 POWER DATA of 1.4 to 1.8GHz TEST BOARD 45 AM14MM-BM at 1.6GHz (Bias: 14V & 1.5A) 100 Pout 80 Pout (dbm) & (db) Eff. (% ) 60 Efficiency (%) -10-5 0 5 10 15 Pin (dbm) 0 45, P1dB & Efficiency vs Frequency (Bias: 14V & 1.5A) 100 P1dB 80 (db), P1dB (dbm) & Efficiency(%) Efficiency 60 1.4 1.5 1.6 1.7 1.8 Frequency (GHz) 0 Tel. (1) 3-80 Fax. (1) 3-81 Website: www.amcomusa.com 1 Professional Drive, Gaithersburg, MD 879

Aug 10, Rev 8 Pout, IP3 & C/I3 vs Pin @ 1.6GHz (Bias: 14V / 1.5A) 60 0 55 IP3-10 50 C/I3 - Pout & IP3 (dbm) 45 - - -50 C/I (dbc) Pout -60-70 -15-10 -5 0 5 10 15 Pin (dbm) -80 POWER DATA of 2.1 to 2.5GHz TEST BOARD Pout, & Efficiency vs Pin at 2.4GHz (Bias: 12V, -0.68V & 1.7A) 50 Pout Pout (dbm) & (db) Efficiency (%) Efficiency (%) 10 15-5 0 5 Pin (dbm) 10 15 0 Tel. (1) 3-80 Fax. (1) 3-81 Website: www.amcomusa.com 1 Professional Drive, Gaithersburg, MD 879

Aug 10, Rev 8 45, P1dB & Efficiency vs Frequency (Bias: 12V, -0.68V & 1.7A) (db), P1dB (dbm) & Efficiency(%) P1dB Efficiency 2 2.1 2.2 2.3 2.4 2.5 2.6 Frequency (GHz) 45, P3dB & Efficiency vs Frequency (Bias: 12V, -0.68V & 1.7A) P3dB (db), P3dB (dbm) & Efficiency(%) Efficiency 2 2.1 2.2 2.3 2.4 2.5 2.6 Frequency (GHz) Tel. (1) 3-80 Fax. (1) 3-81 Website: www.amcomusa.com 1 Professional Drive, Gaithersburg, MD 879

Aug 10, Rev 8 60 55 50 45 Pout, IP3 & C/I3 vs Pin @ 2.4GHz (Bias: 12V, -0.7V / 1.7A) IP3 - -45-50 -55 Pout & IP3 (dbm) C/I3-60 -65-70 C/I3 (dbc) -75-80 15 10 Pout -12-10 -8-6 -4-2 0 2 Pin (dbm) -85-90 Tel. (1) 3-80 Fax. (1) 3-81 Website: www.amcomusa.com 1 Professional Drive, Gaithersburg, MD 879

Aug 10, Rev 8 PACKAGE OUTLINE (BM) PIN LAYOUT Pin No. Function Bias 1 Vdd1 +14V 2 NC 3 RF in 4 NC 5 Vgg1-2V 6 Vgg2-2V 7 RF out +14V 8 RF out +14V 9 RF out +14V 10 NC * V gg1 & V gg2 may vary from lot to lot Tel. (1) 3-80 Fax. (1) 3-81 Website: www.amcomusa.com 1 Professional Drive, Gaithersburg, MD 879

Aug 10, Rev 8 PACKAGE OUTLINE (FM) PIN LAYOUT Pin No. Function Bias 1 Vdd1 +14V 2 NC 3 RF in 4 NC 5 Vgg1-2V 6 Vgg2-2V 7 RF out +14V 8 RF out +14V 9 RF out +14V 10 NC * V gg1 & V gg2 may vary from lot to lot Tel. (1) 3-80 Fax. (1) 3-81 Website: www.amcomusa.com 1 Professional Drive, Gaithersburg, MD 879

Aug 10, Rev 8 1.4 to 1.8GHz TEST CIRCUIT Tel. (1) 3-80 Fax. (1) 3-81 Website: www.amcomusa.com 1 Professional Drive, Gaithersburg, MD 879

Aug 10, Rev 8 2.1 to 2.5GHz TEST CIRCUIT Tel. (1) 3-80 Fax. (1) 3-81 Website: www.amcomusa.com 1 Professional Drive, Gaithersburg, MD 879