VN6L, VNKLS, N-Channel 6-V (D-S) MOSFETs with Zener Gate Part Number V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) VN6L 5 @ V GS = V.8 to 2.5.27 VNKLS 6 5 @ V GS = V.8 to 2.5. 7.5 @ V GS = V.6 to 2.5.2 Zener Diode Input Protected Extra ESD Protection Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Low On-Resistance: Low Offset Voltage Memories, Transistors, etc. Ultralow Threshold:.2 V Low-Voltage Operation Battery Operated Systems Low Input Capacitance: 8 pf High-Speed, Easily Driven Solid-State Relays Low Input and Output Leakage Low Error Voltage Inductive Load Drivers S D TO-226AA (TO-92) G 2 Device Marking Front View VN6L 6L 2222L TO-92S S G 2 D Device Marking Front View VNKLS KLS S = Siliconix Logo = Date Code Top View VN6L S = Siliconix Logo = Date Code Top View VNKLS Parameter Symbol VN6L VNKLS Unit Drain-Source Voltage V DS 6 6 Gate-Source Voltage V GS 5/. 5/. V T A = 25 C.27. Continuous Drain Current (T J = 5 C) T A = C I D.7.2 A Pulsed Drain Current a I DM. Power Dissipation T A = 25 C.8.9 T A = C P D.2.4 Thermal Resistance, Junction-to-Ambient R thja 56 9 C/W Operating Junction and Storage Temperature Range T J, T stg 55 to 5 C Notes a. Pulse width limited by maximum junction temperature. W Document Number: 72 S-4279 Rev. F, 6-Jul- -
VN6L, VNKLS, Limits VN6L VNKLS Parameter Symbol Test Conditions Typ a Min Max Min Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = A 2 6 6 Gate-Threshold Voltage V GS(th) V DS = V GS, I D = ma.2.8 2.5.6 2.5 V Gate-Body Leakage I GSS V DS = V, V GS = 5 V na V DS = 48 V, V GS = V Zero Gate Voltage Drain Current I DSS T J = 25 C 5 5 A On-State Drain Current b I D(on) V DS = V, V GS = V.75.75 A V GS = 5 V, I D =.2 A 4 7.5 7.5 Drain-Source On-Resistance b r DS(on) V GS = V, I D =.5 A 5 7.5 T J = 25 C 5.6 9.5 Forward Transconductance b g fs V DS = V, I D =.5 A Common Source Output Conductance b g os V DS = 7.5 V, I D =.5 A.2 ms Dynamic Input Capacitance C iss 8 6 6 Output Capacitance C oss V DS = 25 V, V GS = V, f = MHz 6 25 25 pf Reverse Transfer Capacitance C rss 2 5 5 Switching c Turn-On Time t ON V DD = 5 V, R L = 2 7 I D.6 A, V GEN = V Turn-Off Time t OFF R G = 25 9 ns Notes a. For DESIGN AID ONLY, not subject to production testing. VNDP6 b. Pulse test: PW s duty cycle 2%. c. Switching time is essentially independent of operating temperature. -2 Document Number: 72 S-4279 Rev. F, 6-Jul-
VN6L, VNKLS, I D Drain Current (ma) 5 4 2 Ohmic Region Characteristics V GS = 2. V.9 V.8 V.6 V.5 V.4 V..8.6.4.2 Output Characteristics for Low Gate Drive 6 V 5 V V GS = V 4 V V.2 V 2 V.4.8.2.6 2. 2 4 5.5 Transfer Characteristics V DS = 5 V 7 On-Resistance vs. Gate-to-Source Voltage.4..2. T J = 55 C 25 C 25 C r DS(on) On-Resistance ( Ω ) 6 5 4 2 I D = 5 ma 25 ma 5 ma 2 4 5 4 8 2 6 2 V GS Gate-Source Voltage (V) V GS Gate-Source Voltage (V) r DS(on) Drain-Source On-Resistance ( Ω ) 5 4 2 On-Resistance vs. Drain Current V GS = V.2.4.6.8. r DS(on) Drain-Source On-Resistance ( Ω ) (Normalized) 2.25 2..75.5.25..75.5 V GS = V Normalized On-Resistance vs. Junction Temperature I D =.5 A. A 5 7 5 T J Junction Temperature ( C) Document Number: 72 S-4279 Rev. F, 6-Jul- -
VN6L, VNKLS, Threshold Region V GS = V f = MHz Capacitance 8 I D Drain Current (ma). 25 C T J = 5 C C C C Capacitance (pf) 6 4 C oss C iss 55 C 2 C rss..25.5.75..25.5.75 V GS Gate-to-Source Voltage (V) 2 4 5 V GS Gate-to-Source Voltage (V) 5. 2.5. 7.5 5. 2.5 Gate Charge I D =.5 A V DS = V 48 V t Switching Time (ns) Load Condition Effects on Switching V DD = 5 V R L = 25 V GS = to V t d(off) t d(on) t f t r 2 4 5 6..5. Q g Total Gate Charge (pc) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2. Single Pulse Notes: P DM t t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = 56 C/W. T JM T A = P DM Z (t) thja.. K t Square Wave Pulse Duration (sec) K -4 Document Number: 72 S-4279 Rev. F, 6-Jul-
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