Features Functional Block Diagram Wide bandwidth High linearity Single positive supply voltage On chip bias choke Vdd Description RFOUT The CMD97 is a wideband GaAs MMIC driver amplifier ideally suited for military, space and communications systems where small size and high linearity are needed. At GHz the device delivers greater than 6 db of gain with a corresponding output db compression point of + dbm and an output IP of dbm. The CMD97 is a ohm matched design which eliminates the need for RF port matching and includes an on chip bias choke. The CMD97 offers full passivation for increased reliability and moisture protection. RFIN ACG Electrical Performance - V dd = 8. V, T A = o C, F= GHz Parameter Min Typ Max Units Frequency Range - GHz Gain 6 db Input Return Loss db Output Return Loss 8 db Output PdB dbm Output IP dbm Supply Current ma
Specifications Absolute Maximum Ratings Parameter Rating Drain Voltage, Vdd V RF Input Power + dbm Channel Temperature, Tch C Power Dissipation, Pdiss. W Thermal Resistance.6 C/W Operating Temperature - to 8 C Storage Temperature - to C Recommended Operating Conditions Parameter Min Typ Max Units Vdd. 8. 9. V Idd ma Electrical performance is measured at specific test conditions. Electrical specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the maximum ratings may cause permanent damage. Electrical Specifications, V dd = 8. V, T A = o C Parameter Min Typ Max Min Typ Max Min Typ Max Units Frequency Range - 6 6-8 8 - GHz Gain. 6. 9. 6 9 6 9 db Noise Figure.. db Input Return Loss 6 8 db Output Return Loss 7 7 db Output PdB 9 7 dbm Output IP dbm Supply Current 7 8 7 8 7 8 ma Gain Temperature Coefficient Noise Figure Temperature Coefficient... db/ C... db/ C
Typical Performance Broadband Performance, V dd = 8. V, I dd = ma, T A = o C 8 7 Response/dB - S S S NF 6 Noise Figure/dB - - - 6 8 6 8 6 8 Narrow-band Performance, V dd = 8. V, I dd = ma, T A = o C 8 7 Response/dB - S S S NF 6 Noise Figure/dB - - - 6 7 8 9 6 7 8 9
Typical Performance Gain vs. Temperature, V dd = 8. V Gain/dB 9 8 7 6 +C +8C -C 9 8 7 6 6 7 8 9 6 7 8 9 Noise Figure vs. Temperature, V dd = 8. V 8 7 +C +8C -C 6 Noise Figure/dB 6 7 8 9 6 7 8 9
Typical Performance Output Power, V dd = 8. V 8 PdB Psat 6 Response/dBm 8 6 6 7 8 9 6 7 8 9 PdB vs. Temperature, V dd = 8.V 8 6 +C +8C -C PdB/dBm 8 6 6 7 8 9 6 7 8 9
Typical Performance Output IP, V dd = 8. V 8 6 +C +8C -C Output IP/dBm 8 6 8 6 6 7 8 9 6 7 8 9
Mechanical Information Die Outline (all dimensions in microns). 7. 6. 88. 9. 6. 9.. Notes:. No connection required for unlabeled pads. Backside is RF and DC ground. Backside and bond pad metal: Gold. Die is 8 microns thick. DC bond pads are microns square
Pad Description Pad Diagram Functional Description Pad Function Description Schematic RF in Vdd ohm matched input External DC block required Power supply voltage Decoupling and bypass caps required RF in Vdd RF out ohm matched output External DC block required RF out ACG Low frequency termination. Attach bypass capacitor per application circuit Backside Ground Connect to RF / DC ground GND
Applications Information Assembly Guidelines The backside of the CMD97 is RF ground. Die attach should be accomplished with electrically and thermally conductive epoxy only. Eutectic attach is not recommended. Standard assembly procedures should be followed for high frequency devices. The top surface of the semiconductor should be made planar to the adjacent RF transmission lines, and the RF decoupling capacitors placed in close proximity to the DC connections on chip. RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use of a.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized. The RF input and output require a double bond wire as shown. The semiconductor is 8 um thick and should be handled by the sides of the die or with a custom collet. Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle with care. Assembly Diagram to Vdd pf BYPASS CAP (example: Presidio part LSABMHR-L). uf BYPASS CAP (example: Presidio part MVB8XZGKRL) RF in RF out. uf CAP TO GROUND GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Applications Information Application Circuit Vdd. uf pf RF out RF in. uf Biasing and Operation The CMD97 is biased with a single positive drain supply. Performance is optimized when the drain voltage is set to +8. V. Turn ON procedure:.apply drain voltage V dd and set to +8 V Turn OFF procedure:.turn off drain voltage V dd RF power can be applied at any time.