MJD4, NJMJD4T4G (NPN), MJD, NJMJDT4G (PNP) High oltage Power Transistors for Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Electrically Similar to Popular MJE4 and MJE Epoxy Meets UL 94 @.2 in NJ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Max Unit CollectorEmitter oltage CEO dc CollectorBase oltage CB dc EmitterBase oltage EB dc Collector Current Continuous I C. Adc Collector Current Peak I CM.7 Adc Total Power Dissipation @ T C = 2 C Derate above 2 C Total Power Dissipation (Note ) @ T A = 2 C Derate above 2 C Operating and Storage Junction Temperature Range P D.2 P D.6.2 W W/ C W W/ C T J, T stg 6 to + C ESD Human Body Model HBM B ESD Machine Model MM C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. These ratings are applicable when surface mounted on the minimum pad sizes recommended. BASE SILICON POWER TRANSISTORS. AMPERE OLTS, WATTS CASE 69C STYLE MARKING DIAGRAM A Y WW Jx G COLLECTOR 2, 4 EMITTER 2 BASE AYWW JxG = Assembly Location = Year = Work Week = Device Code x= 4 or = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. 4 COLLECTOR 2, 4 EMITTER Semiconductor Components Industries, LLC, August, Rev. Publication Order Number: MJD4/D
MJD4, NJMJD4T4G (NPN), MJD, NJMJDT4G (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 8. C/W Thermal Resistance, JunctiontoAmbient (Note 2) R JA 8 C/W Leading Temperature for Soldering Purpose T L 26 C 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ÎÎÎ ELECTRICAL CHARACTERISTICS (T C = 2 C unless otherwise noted) ÎÎÎ Characteristic Symbol Min Max Unit ÎÎÎ OFF CHARACTERISTICS ÎÎÎ CollectorEmitter Sustaining oltage (Note ) ÎÎÎ (I C = ma, I B = ) CEO(sus) ÎÎÎÎ ÎÎÎ Collector Cutoff Current I CEO ÎÎÎ ma ÎÎÎ ( CB =, I E = ). ÎÎÎÎ ÎÎÎ Emitter Cutoff Current I EBO ÎÎÎ ma ( BE =, I C = ). ÎÎÎ ON CHARACTERISTICS (Note ) ÎÎÎ DC Current Gain h ÎÎÎ (I C = ma, CE = ) FE 24 ÎÎÎÎ ÎÎÎ CollectorEmitter Saturation oltage CE(sat) ÎÎÎ (I ÎÎÎ C = ma, I B = ma) ÎÎÎ ÎÎÎ BaseEmitter On oltage BE(on) ÎÎÎ (I C = A, CE = ). ÎÎÎ DYNAMIC CHARACTERISTICS ÎÎÎ Current Gain Bandwidth Product f ÎÎÎ (I C = ma, CE =, f = MHz) T MHz ÎÎÎÎ. Pulse Test: Pulse Width s, Duty Cycle 2%. 2
MJD4, NJMJD4T4G (NPN), MJD, NJMJDT4G (PNP) TYPICAL CHARACTERISTICS MJD4 CE = 2 CE = hfe, DC CURRENT GAIN 7 T J = C + C + 2 C - C 2 7 7 I C, COLLECTOR CURRENT (madc) Figure. DC Current Gain MJD4 T J = 2 C.8 BE(sat) @ I C /I B =, OLTAGE (OLTS).6.4.2 CE(sat) @ I C /I B = BE @ CE = I C /I B = I C, COLLECTOR CURRENT (ma) Figure 2. On oltages T J = C MJD T J = 2 C MJD hfe, DC CURRENT GAIN 7 2 C - C CE = 2 CC = 7 7, OLTAGE (OLTS).8.6.4.2 BE(sat) @ I C /I B = BE @ CE = I C /I B = CE(sat) I C /I B = 7 7 I C, COLLECTOR CURRENT (ma) I C, COLLECTOR CURRENT (ma) Figure. DC Current Gain Figure 4. On oltages
MJD4, NJMJD4T4G (NPN), MJD, NJMJDT4G (PNP).7. D =. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)..2..7...2.2... SINGLE PULSE R JC(t) = r(t) R JC R JC = 8. C/W MAX D CURES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) - T C = P (pk) JC(t) P (pk) t t 2 DUTY CYCLE, D = t /t 2...2....2.. 2 k t, TIME (ms) Figure. Thermal Response IC, COLLECTOR CURRENT (ma) s s ms dc 2 7 7 CE, COLLECTOR-EMITTER OLTAGE (OLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on T J(pk) = C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided T J(pk) C. T J(pk) may be calculated from the data in Figure. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 6. Active Region Safe Operating Area T A 2. T C 2 PD, POWER DISSIPATION (WATTS) 2.. T C T A 2 7 2 T, TEMPERATURE ( C) Figure 7. Power Derating 4
MJD4, NJMJD4T4G (NPN), MJD, NJMJDT4G (PNP) ORDERING INFORMATION MJD4G Device Package Shipping 7 Units / Rail MJD4RLG MJD4T4G NJMJD4T4G MJDG MJDT4G,8 / Tape & Reel 2, / Tape & Reel 2, / Tape & Reel 7 Units / Rail 2, / Tape & Reel NJMJDT4G 2, / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D.
MJD4, NJMJD4T4G (NPN), MJD, NJMJDT4G (PNP) PACKAGE DIMENSIONS (SINGLE GAUGE) CASE 69C ISSUE D L L4 b2 e E b 4 2 b A D B DETAIL A c. (.) M C A C c2 H L2 GAUGE PLANE L L DETAIL A ROTATED 9 CW A H C Z SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.M, 994. 2. CONTROLLING DIMENSION: INCHES.. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b, L and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED.6 INCHES PER SIDE.. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.86.94 2.8 2.8 A.... b.2..6.89 b2..4.76.4 b.8.2 4.7.46 c.8.24.46.6 c2.8.24.46.6 D.2.24.97 6.22 E..26 6. 6.7 e.9 BSC 2.29 BSC H.7.4 9.4.4 L..7.4.78 L.8 REF 2.74 REF L2. BSC. BSC L...89.27 L4.4. Z..9 SOLDERING FOOTPRINT* 6..244 2.8.2..8 STYLE : PIN. BASE 2. COLLECTOR. EMITTER 4. COLLECTOR.8.228.6.6 6.7.24 SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Denver, Colorado 827 USA Phone: 6727 or 84486 Toll Free USA/Canada Fax: 67276 or 844867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 828298 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 79 29 Japan Customer Focus Center Phone: 887 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJD4/D