Industry standard 34mm IGBT module MIFA-HB12FA-N Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of C o square RBSOA of 2xIC o low EMI FRD chip o fast and soft reverse recovery o low voltage drop Design features copper baseplate Al2O3 DBC substrate ultrasonically welded power terminals Improved termal cycling RoHS compliant UL certified file-no. Е25544 Typical application AC motor drives solar inverter air conditioning high power converters and UPS 12 V A Maximum rated values Definition Symbol Conditions Value Unit IGBT Collector-Emitter voltage VCES VGE =. 12 V Collector current (nominal) IC nom A IC 25 Tvj (max) = 175 C; Tc = 25 C. 233 A Collector current (maximum continuous) IC 8 Tvj (max) = 175 C; Tc = 8 C. A Repetitive peak collector current *1 ICRM ICRM = 3 x IC nom; tp = 1 ms. 45 A Short-circuit duration tpsc T vj = 25 C; V GE = ± V; V CE = 7 V; on = off = 2.2 Ω; max < 11 A. 1 T vj = C; V GE = ± V; V CE = 7 V; on = off = 2.2 Ω; max < 11 A. 1 µs Gate-Emitter voltage VGES ±2 V Junction operating temperature Tvj (op) -4 + ºC Inverse diode \ Freewheeling diode Repetitive peak reverse voltage VRRM VGE = V. 12 V Forward current (nominal) IF nom A Forward current (maximum continuous) IF 25 Tvj (max) = 175 C; Tc = 25 C. 193 A IF 8 Tvj (max) = 175 C; Tc = 8 C. 146 A Repetitive peak forward current *1 IFRM IFRM = 3 x IF nom; tp = 1 ms. 45 A Junction operating temperature Tvj (op) -4 + C Module Storage temperature Tstg -55 +5 C Isolation voltage Visol AC sin 5 Hz; t = 1 min. 4 V *1 Pulse width and repetition rate should be such that device junction temperature does not exceed maximum Tvj rating 5.6.218 Datasheet MIFA-HB12FA-N_v1.1 page 1
Characteristics MIFA-HB12FA-N Definition Symbol Conditions Value min. typ. mаx. Unit IGBT Collector-Emitter saturation voltage VCEsat VGE = + V; IC = А; Tvj = 25 C 1.79 1.83 1.9 V tu = 1 µs. Tvj = C 2.26 2.32 2.5 V Gate-Emitter threshold voltage VGE(th) IC = 1.6 mа; VCE = VGE; Tvj = 25 C; tu = 2 ms. 5.66 6.4 6.47 V Collector-Emitter cut-off current ICES VCE = 12 V; Tvj = 25 C 2.67 3.2 3 µа tu = 1 ms; VGE =. Tvj = C.77.98 3. mа Gate-Emitter leakage current IGES VCE = ; VGE = ±2 V; Tvj = 25 C; tu = 3 ms. 12.4.6 125 nа Input capacitance Cies - 13.8 - nf VCE = 1 V; VGE = V; Output capacitance Coes - 1. - nf f = 1 MHz; Tvj = 25 C. Reverse transfer capacitance Cres - 1.2 - nf Total gate charge QG IC = А; VCE = 6 V; VGE = - 8 V. - 65 1676 нc Internal gate resistance RGint Tvj = 25 C. - 5. - Ω Turn-on delay time td(on) Tvj = 25 C 336 346 4 Tvj = C 378 391 44 ns Tvj = 25 C 46. 49. 56. Rise time tri VCE = 6 V; ns Tvj = C 51. 54. 6. Tvj = 25 C 5.23 6.17 9. Turn-on energy Eon IC max = А; mj Tvj = C 9.95 11.2 14. Tvj Turn-off delay time td(off) L = 3 µh. = 25 C 49 419 46 ns Tvj = C 472 488 54 Fall time tfi Tvj = 25 C 184 231 31 Tvj = C 327 357 44 ns Turn-off energy Eoff Tvj = 25 C 11.5 12.4 16. Tvj = C.8 16.7 2. mj Collector-emitter threshold voltage VCE VGE = + V; Tvj = C;.84.85.9 V On-State slope resistance (IGBT) rce ICE1 = 38 А; ICE2 = А; tu = 1 µs. 9.46 9.76 1.7 mω Thermal resistance junction to case Rth(j-c) DC; ICE = A; Itest =.5 A; VGE = + V. -.146.23 K/W Inverse diode \ Freewheeling diode Forward voltage drop VF IF = А; Tvj = 25 C 1.82 1.86 1.96 V VGE = ; tu = 1 µs. Tvj = C 1.91 1.95 2.1 V Tvj = 25 C 119 123 14 ns Reverse recovery time trr Tvj = C 169 179 21 ns VCE = 6 V; Tvj = 25 C 135 141 17 A Peak reverse recovery current IrrM IC max = А; Tvj = C 166 175 22 А Reverse recovered charge Qrr L = 3 µh; Tvj = 25 C 1. 1. 12. µc RG on = 2.2 Ω. Tvj = C 17. 18. 21. µc Reverse recovery energy Erec Tvj = 25 C 5. 5. 7. mj Tvj = C 13. 14. 18. mj Threshold voltage V(T) Tvj = C; VGE = ; ICE1 = 38 А;.82.83.84 V Forward slope resistance rt ICE2 = А; tu = 1 µs 7.23 7.53 8. mω Thermal resistance junction to case Rth(JC-D) DC; ICE = 12 A; Itest =.5 A; VGE = + V. -.26.34 К/W 5.6.218 Datasheet MIFA-HB12FA-N_v1.1 page 2
MIFA-HB12FA-N Module Pin resistance RPxy T vj = 25 C. Parasitic inductance between terminals LPxy T vj = 25 C; f = 1 MHz. RP12 -.47.5 RP13 -.66.66 LP12-34.5 35. LP13-52.3 6. Thermal resistance case to heatsink RthCH per module -.2.4 К/W Mounting torque for screws to heatsink Ms to heatsink M6 3. - 5. Nm Mounting torque for terminal screws Mt to terminals M5 2.25 2.5 2.75 Nm Weight W - 17 g mω nh Notes: Insulating material operating temperature 125 C max; Case temperature 125 C max; The recommended operating junction temperature Tvj op = - 4 + C. 5.6.218 Datasheet MIFA-HB12FA-N_v1.1 page 3
MIFA-HB12FA-N Chart 1 typ. output characteristic, IGBT. 16 14 T j = 25 C 12 1 T j = C 8 6 4 2 1 1,5 2 2,5 3 V CE [V] VGE = + V. 3 25 2 1 5 Chart 2 max. rated current vs temperature. 2 4 6 8 1 12 14 16 18 2 T C [ C] DC; VGE = + V; Tvj (max) = C. Chart 3 typ. turn-on/-off energy vs rated current, IGBT. 25 Chart 4 typ. turn-on/-off energy vs gate resistance, IGBT. 25 2 2 E off E [mj] 1 E [mj] 1 E on 5 E off 5 E on 2 4 6 8 1 12 14 16 VCE = 6 V; L = 3 µh; Tvj (max) = C. 1 2 3 4 5 6 7 8 9 1 11 VCE = 6 V; IC max = А; L = 3 µh; Tvj (max) = C. 5.6.218 Datasheet MIFA-HB12FA-N_v1.1 page 4
MIFA-HB12FA-N t [ns] Chart 5 typ. switching times vs rated current, IGBT. 7 6 5 4 3 2 1 t d_off t d_on 2 4 6 8 1 12 14 16 VCE = 6 V; L = 3 µh; Tvj (max) = C. Chart 7 max. transient thermal impedance. t [ns] Chart 6 typ. switching times vs gate resistance, IGBT. 9 8 7 6 5 4 3 2 1 t d_off t d_on 1 2 3 4 5 6 7 8 9 1 11 VCE = 6 V; IC max = А; L = 3 µh; Tvj (max) = C. Chart 8 RBSOA. Z thjc [K/W] 1,1,1 Diode IGBT 35 3 25 2 1 5 Single pulse; VGE = + V.,1,1 1 1 12 t [s] V CE [V] VCE max = 12 V; IC max = 2*IC nom; L = 3 µh. 5.6.218 Datasheet MIFA-HB12FA-N_v1.1 page 5
MIFA-HB12FA-N Chart 9 typ. output characteristic, FRD. Chart 1 typ. switching losses vs rated current, FRD. 16 14 12 1 8 6 T j = 25 C T j = C E rec [mj] 12 9 6 4 2 3 1 1,5 2 2,5 3 V F [V] 2 4 6 8 1 12 14 16 VGE = + V. VCE = 6 V; L = 3 µh; Tvj (max) = C. Chart 11 typ. switching losses vs gate resistance, FRD. 12 1 8 Chart 12 typ. reverse recovered charge vs gate resistance, FRD. 3 25 2 E rec [mj] 6 Q rr [μc] 4 1 2 5 1 2 3 4 5 6 7 8 9 1 11 1 2 3 4 5 6 7 8 9 1 11 VCE = 6 V; IC max = А; L = 3 µh; Tvj (max) = C. VCE = 6 V; IC max = А; L = 3 µh; Tvj (max) = C. 5.6.218 Datasheet MIFA-HB12FA-N_v1.1 page 6
MIFA-HB12FA-N t [ns] Chart 13 typ. switching times vs rated current, FRD. 8 7 6 5 4 3 2 1 t fi t ri 2 4 6 8 1 12 14 16 VCE = 6 V; L = 3 µh. Tvj (max) = C. Chart typ. gate charge characteristic. t [ns] Chart 14 typ. switching times vs gate resistance, FRD. 8 7 6 5 4 3 2 1 t fi t ri 1 2 3 4 5 6 7 8 9 1 11 VCE = 6 V; IC max = А; L = 3 µh. Tvj (max) = C. Chart 16 typ. reverse recovery current vs gate resistance FRD. 2 16 14 12 1 1 V GE [V] 5 I rr 8 6-5 -1 5 1 2 Q G [nc] 4 2 1 2 3 4 5 6 7 8 9 1 11 IC = А; VCE = 6 V; VGE = - 8 V. VCE = 6 V; L = 3 µh. Tvj (max) = C. 5.6.218 Datasheet MIFA-HB12FA-N_v1.1 page 7
MIFA-HB12FA-N Chart 17 typ. rated current vs frequency. 16 14 12 1 8 6 4 2 1 2 3 4 5 6 f SW [khz] Duty cycle 5% 5.6.218 Datasheet MIFA-HB12FA-N_v1.1 page 8
MIFA-HB12FA-N Overall dimensions: Package type FA Part numbering guide MIFA - HB 12 FA - N MIFA IGBT module package type: FA HB 2 switches as Half-Bridge HC 1 switch as High-Side chopper LC 1 switch as Low-Side chopper 12 Voltage rating (VCES/1) FA IGBT+FRD chipset modification Current Rating N Climatic version: normal climate The information contained herein is protected by Copyright. In the interest of product improvement, Proton-Electrotex reserves the right to change datasheet without notice. 5.6.218 Datasheet MIFA-HB12FA-N_v1.1 page 9