Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±2 T J Maximum Junction Temperature 75 C T STG Storage Temperature Range -55 to 75 C I S Diode Continuous Forward Current T C =25 C 29 A Mounted on Large Heat Sink I DM Pulsed Drain Current * T C =25 C ** A I D P D Continuous Drain Current T C =25 C 29 T C = C 2 A Maximum Power Dissipation T C =25 C 24 T c = C 7 W R θjc Thermal Resistance-Junction to Case.7 C/W R θja Thermal Resistance-Junction to Ambient 62.5 C/W E AS Avalanche Energy,Single Pulsed L=.5mH 325*** mj Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=24V V Electrical Characteristics (T C = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Static Characteristics HY493 Min. Typ. Max. BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =25µA 3 - - V I DSS Zero Gate Voltage Drain Current V DS = 3V, V GS =V - - T J =85 C - - 3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =25µA. - 3. V I GSS Gate Leakage Current V GS =±2V, V DS =V - - ± na R DS(ON) Drain-Source On-state Resistance Diode Characteristics V GS =V, I DS =45A -.6 2. mω V SD * Diode Forward Voltage I SD =45 A, V GS =V -.8. V t rr Reverse Recovery Time - 38 - ns I DS =45A, dl SD /dt=a/µs Reverse Recovery Charge - 8 - nc Q rr * Unit V GS =4.5V, I DS =45A 2. 3. mω µa 2
Electrical Characteristics (Cont.) (T C = 25 C Unless Otherwise Noted) HY493 Symbol Parameter Test Conditions Unit Min. Typ. Max. Dynamic Characteristics R G Gate Resistance V GS =V,V DS =V,F=MHz -.5 - Ω C iss Input Capacitance V GS =V, - 56 - C oss Output Capacitance V DS =25V, - 236 - Reverse Transfer Capacitance Frequency=.MHz - 762 - C rss t d(on) Turn-on Delay Time - 52 - T r Turn-on Rise Time V DD =5V, R G =3.3Ω, - 2 - I DS =45A, V GS = V, ns t d(off) Turn-off Delay Time - 9 - T f Turn-off Fall Time - 78 - Gate Charge Characteristics Q g Total Gate Charge - 247 - V DS=24V, V Q gs Gate-Source Charge GS = V, - 27 - nc I DS =45A Gate-Drain Charge - 58 - Q gd Note * : Pulse test ; pulse width 3µs, duty cycle 2%.. pf 3
Typical Operating Characteristics Power Dissipation Drain Current Ptot - Power (W) 25 2 5 5 T C =25 o C 2 4 6 8 2 4 6 8 2 ID - Drain Current (A) 35 3 25 2 5 5 T C =25 o C,V G =V limited by package 2 4 6 8 2 4 6 8 2 Tc- Temperature ( C) Tc-Case Temperature ( C) Case Safe Operation Area ID - Drain Current (A) Rds(on) Limit us ms ms DC. 4 VDS - Drain - Source Voltage (V) Thermal Transient Impedance Normalized Effective Transient... Single..2.5. Duty =.5.2 Mounted on minimum pad R θja :62.5 o C/W..... Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 64 4 ID - Drain Current (A) 56 48 4 32 24 6 8 V GS = 7,8,9,V 6V 5V 4V 3V RDS(ON) - On - Resistance (mω) 3 2 V GS =4.5V V GS =V 2 3 4 5 VDS - Drain-Source Voltage (V) 2 3 4 5 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (mω) 8 7 6 5 4 3 2 I DS =45A Normalized Threshold Vlotage.8.6.4.2..8.6.4.2 I DS =25µA 4 5 6 7 8 9 VGS - Gate - Source Voltage (V). -5-25 25 5 75 25 5 75 Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.2 2. V GS = V I DS = 45A 2 Normalized On Resistance.8.6.4.2..8.6 IS - Source Current (A) T j =75 o C T j =25 o C.4 R ON @T =25 o j C:.6m Ω.2-5 -25 25 5 75 25 5 75..2.4.6.8. Tj - Junction Temperature ( C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 22 Frequency=MHz 2 8 6 4 Ciss 2 8 6 4 Coss 2 Crss 5 5 2 25 3 35 4 VGS - Gate-source Voltage (V) V DS =24V 9 I DS =45A 8 7 6 5 4 3 2 4 8 2 6 2 24 28 VDS - Drain - Source Voltage (V) QG - Gate Charge (nc) 6
TO-263-2L SYMBOL MM INCH MIN NOM MAX MIN NOM MAX A 4.4 4.57 4.7.73.8.85 A.22.27.32.48.5.52 A2 2.59 2.69 2.79.2.6. A3...2..4.8 b.77.83.9.3.32.35 b.2.27.36.47.5.54 c.34.38.47.3.5.9 D 8.6 8.7 8.8.339.343.346 E..6.26.394.4.44 E2...2.394.398.42 e 2.54 BSC. BSC H 4.7 5. 5.5.579.594.6 H2.7.27.4.46.5.55 L 2. 2.3 2.6.79.9.2 L.45.55.7.57.6.67 L2 2.5 REF.98 REF L4.25 BSC. BSC 5 8 5 8 5 7 9 5 7 9 2 3 5 3 5 ΦP.4.5.6.55.59.63 DEP.5..2.2.4.8 9
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) C 5 C 6-2 seconds 5 C 2 C 6-2 seconds Average ramp-up rate (T smax to T P) 3 C/second max. 3 C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 83 C 6-5 seconds 27 C 6-5 seconds See Classification Temp in table See Classification Temp in table 2 2** seconds 3** seconds Average ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <35 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm 3 35-2 Volume mm 3 >2 <.6 mm 26 C 26 C 26 C.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B2 5 Sec, 245 C HOLT JESD-22, A8 Hrs, Bias @ 25 C PCT JESD-22, A2 68 Hrs, %RH, 2atm, 2 C TCT JESD-22, A4 5 Cycles, -65 C~5 C