Features Functional Block Diagram Ultra low noise performance High linearity Small die size 2 GB 3 Vgg Vdd 4 RFIN RFOUT Description The CMD63 is a high dynamic range GaAs MMIC low noise amplifier ideally suited for military, space and communications systems where small size and high linearity are needed. The device is optimized for 2 GHz and delivers greater than 24 db of gain with a corresponding output db compression point of +9 dbm and noise figure of.3 db. The CMD63 is a ohm matched design which eliminates the need for external DC blocks and RF port matching. The CMD63 offers full passivation for increased reliability and moisture protection. This amplifier is the perfect alternative to higher cost hybrid amplifiers. Electrical Performance - V dd = 4. V, V gg = 3. V, T A = 2 o C, F=2 GHz Parameter Min Typ Max Units Frequency Range 7-27 GHz Gain 24 db Noise Figure.3 db Input Return Loss db Output Return Loss 2 db Output PdB 9 dbm Supply Current 2 ma
Specifications Absolute Maximum Ratings Parameter Rating Drain Voltage, Vdd. V Gate Voltage, Vgg 4. V RF Input Power +2 dbm Channel Temperature, Tch C Power Dissipation, Pdiss 6 mw Thermal Resistance 8 C/W Operating Temperature - to 8 C Recommended Operating Conditions Parameter Min Typ Max Units Vdd 2. 4.. V Idd 2 ma Vgg 3. 4. V Electrical performance is measured at specific test conditions. Electrical specifications are not guaranteed over all recommended operating conditions. Storage Temperature - to C Operation of this device outside the maximum ratings may cause permanent damage. Electrical Specifications, V dd = 4. V, V gg = 3. V, T A = 2 o C Parameter Min Typ Max Min Typ Max Units Frequency Range 7-27 7.7-23.6 GHz Gain 8 24 27 2 24 27 db Noise Figure.3.9.3.7 db Input Return Loss 8 db Output Return Loss 2 db Output PdB 9 9 dbm Output IP3 26 2 dbm Supply Current 8 2 8 2 ma Gain Temperature Coefficient Noise Figure Temperature Coefficient.. db/ C.8.8 db/ C
Typical Performance Broadband Performance, V dd = 4. V, V gg = 3. V, I dd = 2 ma, T A = 2 o C 3 2 2 S S22 S2 NF 2. 2.2 2.7 Response/dB -..2.7 Noise Figure/dB -. -.2-2 2 4 6 8 2 4 6 8 2 22 24 26 28 3 Narrow-band Performance, V dd = 4. V, V gg = 3. V, I dd = 2 ma, T A = 2 o C 3 2. 2 2.2 2 2.7 Response/dB - - S S22 S2 NF Vdd=4V NF Vdd=3V..2.7. Noise Figure/dB -.2-2 7 8 9 2 2 22 23 24 2 26 27
Typical Performance Gain vs. Temperature, V dd = 4. V, V gg = 3. V 27 26 2 24 23 22 Gain/dB 2 2 9 8 7 6 4 +2C +8C -C 3 7 8 9 2 2 22 23 24 2 26 27 Noise Figure vs. Temperature, V dd = 4. V, V gg = 3. V 3 2.8 2.6 2.4 +2C +8C -C Noise Figure/dB 2.2 2.8.6.4.2.8.6.4.2 7 8 9 2 2 22 23 24 2 26 27
Typical Performance Output Power, V dd = 3. V & 4. V, V gg = 3. V, T A = 2 o C 22 2 2 9 Response/dBm 8 7 6 4 3 2 PdB Vdd=4V Psat Vdd=4V PdB Vdd=3V Psat Vdd=3V 7 8 9 2 2 22 23 24 2 26 27 PdB & Output IP3 vs. Temperature, V dd = 4. V, V gg = 3. V 3 28 26 24 Response/dBm 22 2 8 6 4 2 PdB T=+2C PdB T=+8C PdB T=-C OIP3 T=+2C OIP3 T=+8C OIP3 T=-C 7 8 9 2 2 22 23 24 2 26 27
Mechanical Information Die Outline (all dimensions in microns) 22. 97. 42. 2. 2 3 4 3. 22. 82. 23. Notes:. No connection required for unlabeled pads 2. Backside is RF and DC ground 3. Backside and bond pad metal: Gold 4. Die is 8 microns thick. DC bond pads are microns square
Pad Description Pad Diagram 2 3 4 Functional Description Pad Function Description Schematic RF in DC blocked and ohm matched R F in 2 GB Connect to DC ground Vgg 3 Vgg 4 Vdd Power supply voltage Decoupling and bypass caps required Power supply voltage Decoupling and bypass caps required GB Vdd RF out DC blocked and ohm matched RF out Backside Ground Connect to RF / DC ground GND
Applications Information Assembly Guidelines The backside of the CMD63 is RF ground. Die attach should be accomplished with electrically and thermally conductive epoxy only. Eutectic attach is not recommended. Standard assembly procedures should be followed for high frequency devices. The top surface of the semiconductor should be made planar to the adjacent RF transmission lines, and the RF decoupling capacitors placed in close proximity to the DC connections on chip. RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use of a.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized. The RF input and output require a double bond wire as shown. The semiconductor is 8 um thick and should be handled by the sides of the die or with a custom collet. Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle with care. Assembly Diagram to Vgg to Vdd, pf CHIP CAPS (example: Presidio part MVB48X4ZGKR3L) RF in RF out pf CHIP CAPS (example: Presidio part LSABM2HR-L) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Applications Information Biasing and Operation The CMD63 is biased with a positive drain supply and positive gate supply. Performance is optimized when the drain voltage is set to +4. V, though it may be set to a minimum of +2. V and a maximum of +4. V. The recommended gate voltage is +3. V. Turn ON procedure:.apply drain voltage V dd and set to +4 V 2.Apply gate voltage V gg and set to +3 V Turn OFF procedure:.turn off gate voltage V gg 2.Turn off drain voltage V dd RF power can be applied at any time.