HA26, HA26 September 998 File Number 292.3 2MHz, High Input Impedance Operational Amplifiers HA26/26 are internally compensated bipolar operational amplifiers that feature very high input impedance (MΩ, HA26) coupled with wideband AC performance. The high resistance of the input stage is complemented by low offset voltage (.mv, HA26) and low bias and offset current (na, HA26) to facilitate accurate signal processing. Input offset can be reduced further by means of an external nulling potentiometer. 2MHz unity gainbandwidth, 7V/µs slew rate and kv/v openloop gain enables HA26/26 to perform highgain amplification of fast, wideband signals. These dynamic characteristics, coupled with fast settling times, make these amplifiers ideally suited to pulse amplification designs as well as high frequency (e.g. video) applications. The frequency response of the amplifier can be tailored to exact design requirements by means of an external bandwidth control capacitor. In addition to its application in pulse and video amplifier designs, HA26/26 are particularly suited to other high performance designs such as highgain low distortion audio amplifiers, highq and wideband active filters and highspeed comparators. For more information, please refer to Application Note AN. The HA26 is offered as /883 Military Grade; product and data sheet are available upon request. Ordering Information PART NUMBER TEMP. RANGE ( o C) PACKAGE HA2262 to 2 8 Pin Metal Can T8.C HA226 to 7 8 Pin Metal Can T8.C HA326 to 7 8 Ld PDIP E8.3 PKG. NO. Features Bandwidth................................ 2MHz High Input Impedance..................... MΩ Low Input Bias Current........................ na Low Input Offset Current...................... na Low Input Offset Voltage.....................mV High Gain.............................. kv/v Slew Rate................................. 7V/µs Output Short Circuit Protection Unity Gain Stable Applications Video Amplifier Pulse Amplifier Audio Amplifiers and Filters HighQ Active Filters HighSpeed Comparators Low Distortion Oscillators Pinouts V 2 3 4 HA26 (PDIP) TOP VIEW 8 7 6 V HA26/ (METAL CAN) TOP VIEW 8 7 V 2 6 3 4 V CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 888TERSIL or 32724743 Copyright Intersil Corporation 999
HA26, HA26 Absolute Maximum Ratings Supply Voltage Between V and V Terminals............. 4V Differential Input Voltage.............................. 2V Peak Output Current............... Full Short Circuit Protection Operating Conditions Temperature Range HA262.............................. o C to 2 o C HA26................................ o C to 7 o C Thermal Information Thermal Resistance (Typical, Note ) θ JA ( o C/W) θ JC ( o C/W) Metal Can Package............... 6 8 PDIP Package................... 96 N/A Maximum Junction Temperature (Hermetic Package)........7 o C Maximum Junction Temperature (Plastic Package)........ o C Maximum Storage Temperature Range.......... 6 o C to o C Maximum Lead Temperature (Soldering s)............ 3 o C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE:. θ JA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications V SUPPLY = ±V, Unless Otherwise Specified PARAMETER TEMP. ( o C) HA262 HA26 M TYP MAX M TYP MAX UNITS PUT CHARACTERISTICS Offset Voltage 2. 4 3 mv Full 2 6 7 mv Average Offset Voltage Drift Full µv/ o C Bias Current 2 2 na Full 3 4 na Offset Current 2 2 na Full 3 4 na Differential Input Resistance (Note 2) 2 4 3 MΩ Input Noise Voltage Density (f = khz) 2 nv/ Hz Input Noise Current Density (f = khz) 2.6.6 pa/ Hz Common Mode Range Full ± ±2 ± ±2 V TRANSFER CHARACTERISTICS Large Signal Voltage Gain (Notes 3, 6) 2 8 kv/v Full 7 7 kv/v Common Mode Rejection Ratio (Note 4) Full 8 74 db Minimum Stable Gain 2 V/V Gain Bandwidth Product (Note ) 2 2 2 MHz PUT CHARACTERISTICS Output Voltage Swing (Note 3) Full ± ±2 ± ±2 V Output Current (Note 6) 2 ± ±22 ± ±8 ma Full Power Bandwidth (Notes 6, 3) 2 7 7 khz TRANSIENT RESPONSE (Note ) Rise Time (Notes 3, 7, 8, 9) 2 3 6 3 6 ns Overshoot (Notes 3, 7, 8, 9) 2 2 4 2 4 % Slew Rate (Notes 3, 7, 9, 4) 2 ±4 ±7 ±4 ±7 V/µs Settling Time (Notes 3, 7, ) 2.. µs 2
HA26, HA26 Electrical Specifications V SUPPLY = ±V, Unless Otherwise Specified (Continued) PARAMETER TEMP. ( o C) HA262 HA26 M TYP MAX M TYP MAX UNITS POWER SUPPLY CHARACTERISTICS Supply Current 2 3 3.7 3 4 ma Power Supply Rejection Ratio (Note ) Full 8 9 74 9 db NOTES: 2. Typical and minimum specifications for 9 are identical to those of. All maximum specifications for 9 are identical to those of except for Full Temperature Bias and Offset Currents, which are 7nA Max. 3. R L = 2kΩ. 4. V CM = ±V.. V < 9mV. 6. V = ±V. 7. C L = pf. 8. V = ±mv. 9. A V =.. See Transient Response Test Circuits and Waveforms.. V S = ±V. 2. This parameter value guaranteed by design calculations. Slew Rate 3. Full Power Bandwidth guaranteed by slew rate measurement: FPBW =. 2πV 4. V = ±V PEAK. Settling time is characterized at A V = to.% of a V step. Test Circuits and Waveforms V ±mv 9% PUT % V ±mv PUT RISE TIME NOTE: Measured on both positive and negative transitions from V to mv and V to mv at the output. FIGURE. TRANSIENT RESPONSE V V PUT V 9% PUT V % V SLEW RATE t = V/ t FIGURE 2. SLEW RATE V kω R T 2kΩ pf V C C NOTE: Tested offset adjustment range is V OS mv minimum referred to output. Typical ranges are ±mv with R T = kω. FIGURE 3. SLEW RATE AND TRANSIENT RESPONSE TEST CIRCUIT FIGURE 4. SUGGESTED V OS ADJUSTMENT AND ENSATION HOOK UP 3
HA26, HA26 Schematic Diagram ENSATION V R K Q R 2 4.8K R 3.6K R 4.6K Q 39 C 4 4pF C 3 C 2 6pF 9pF R 6 Q 6 R 6 Q 3 Q 2 Q 4 Q 38 Q 4 Q 6 Q 4 Q 37 Q 42 Q 9 PUT Q Q6 Q 7 Q 3 Q 29 Q 3 Q 28 Q 36 Q3 Q 32 Q 33 Q 43 Q 8 Q 7 Q 8 Q 3 Q 6 Q Q 2 Q Q 9 Q Q 7 Q 8 Q27 Q 26 Q2 Q 24 Q 44 Q Q 4 Q 4 Q 46 Q 47 Q 6 Q 3 R 8 3 R 7 3 R 7.3 R 9 2.K Q 9 R 4.K Q Q 2 22 Q 23 Q 48 Q 2 R P R 8 K Q 49 Q Q PUT Q R 9 4.K R 2.K C 6pF R 2.6K R 3.6K R 4 2.K R 8 R 6 V Typical Applications pf SILICON PHOTO DIODE I P = µa I B = na 6V R = 4kΩ HA26 V O = R(I P ± I B ) pf (NOTE) 6V µs 2V V V MULTIPLEXER C HA26 pf (NOTE) V FEATURES:. Constant cell voltage. 2. Minimum bias current error. DIGITAL CONTROL DRIFT RATE = I BIAS C V If C = pf Then DRIFT =.V/µs (Max) NOTE: A small load capacitance is recommended in all applications where practical to prevent possible high frequency oscillations resulting from external wiring parasitics. Capacitance up to pf has negligible effect on the bandwidth or slew rate. FIGURE. PHOTO CURRENT TO VOLTAGE CONVERTER FIGURE 6. SAMPLE AND HOLD 4
HA26, HA26 Typical Applications (Continued) R 2 V R V REF I BIAS HA26 V pf (NOTE) FEATURES:. Minimum bias current in reference cell. 2. Short Circuit Protection. R 2 V O = VREF R HA26 V pf (NOTE) FEATURES. Z = 2 Ω (Min). 2. Z =.Ω (Max), B.W. = 2MHz (Typ). 3. Slew Rate = 4V/µs (Min), Output Swing = ±V (Min) to khz. NOTE: A small load capacitance is recommended in all applications where practical to prevent possible high frequency oscillations resulting from external wiring parasitics. Capacitance up to pf has negligible effect on the bandwidth or slew rate. FIGURE 7. REFERENCE VOLTAGE AMPLIFIER FIGURE 8. VOLTAGE FOLLOWER Typical Performance Curves V S = ±V, T A = 2 o C, Unless Otherwise Specified EQUIVALENT PUT NOISE vs BANDWIDTH CURRENT (na) OFFSET BIAS EQUIVALENT PUT NOISE (µv) kω SOURCE RESISTANCE THERMAL NOISE OF K RESISTOR Ω SOURCE RESISTANCE 2 2 7 2 TEMPERATURE ( o C). Hz khz khz khz MHz UPPER 3dB FREQUENCY (LOWER 3dB FREQUENCY = Hz) MHz FIGURE 9. PUT BIAS CURRENT AND OFFSET CURRENT vs TEMPERATURE FIGURE. BROADBAND NOISE CHARACTERISTICS OPEN LOOP VOLTAGE GA (db) 8 6 4 PHASE GA 6 4 8 PHASE ANGLE (DEGREES) IMPEDANCE (MΩ) 8 6 4 Hz Hz khz khz khz MHz MHz MHz FREQUENCY FIGURE. OPEN LOOP FREQUENCY RESPONSE 3 2 4 6 8 2 TEMPERATURE ( o C) FIGURE 2. PUT IMPEDANCE vs TEMPERATURE (Hz)
HA26, HA26 Typical Performance Curves V S = ±V, T A = 2 o C, Unless Otherwise Specified (Continued) PEAK VOLTAGE SWG (±V).. khz ±V SUPPLY ±V SUPPLY ±V SUPPLY ±V SUPPLY khz MHz MHz MHz FREQUENCY OPEN LOOP VOLTAGE GA (db) 8 6 4 Hz pf 3pF pf pf pf 3pF Hz khz khz khz MHz MHz FREQUENCY (Hz) NOTE: External compensation components are not required for stability, but may be added to reduce bandwidth if desired. If External Compensation is used, also connect pf capacitor from output to ground. FIGURE 3. PUT VOLTAGE SWG vs FREQUENCY FIGURE 4. OPEN LOOP FREQUENCY RESPONSE FOR VARIOUS VALUES OF CAPACITORS FROM ENSATION P TO GROUND COMMON MODE RANGE (±V) o C TO 2 o C GA (db) ±V SUPPLY ±V SUPPLY ±V SUPPLY ±V SUPPLY SUPPLY VOLTAGE (±V) FIGURE. COMMON MODE VOLTAGE RANGE vs SUPPLY VOLTAGE 8 3 2 4 6 8 2 TEMPERATURE ( o C) FIGURE 6. OPEN LOOP VOLTAGE GA vs TEMPERATURE COMMON MODE REJECTION RATIO (db) 8 6 4 Hz khz khz khz MHz FREQUENCY PUT NOISE VOLTAGE (nv/ Hz) PUT NOISE CURRENT PUT NOISE VOLTAGE. K K K FREQUENCY (Hz). PUT NOISE CURRENT (pa/ Hz) FIGURE 7. COMMON MODE REJECTION RATIO vs FREQUENCY FIGURE 8. NOISE DENSITY vs FREQUENCY 6
HA26, HA26 Die Characteristics DIE DIMENSIONS: 69 mils x 6 mils x 9 mils 7µm x 4µm x 483µm METALLIZATION: Type: Al, % Cu Thickness: 6kÅ ±2kÅ SUBSTRATE POTENTIAL (Powered Up): Unbiased PASSIVATION: Type: Nitride (Si 3 N 4 ) over Silox (SiO 2, % Phos.) Silox Thickness: 2kÅ ±2kÅ Nitride Thickness: 3.kÅ ±.kå TRANSISTOR COUNT: 4 PROCESS: Bipolar Dielectric Isolation Metallization Mask Layout HA26, HA26 V V All Intersil semiconductor products are manufactured, assembled and tested under ISO9 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7