MDN24U22ED High oltage Standard ectifier Module 3~ ectifier M 22 I 24 D I FSM 5 3~ ectifier Bridge Part number MDN24U22ED Backside: isolated 39-42 -3 7-9 3-5 28-3 Features / dvantages: pplications: Package: Package with DCB ceramic Improved temperature and power cycling Planar passivated chips ery low forward voltage drop ery low leakage current Diode for main rectification For single and three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Isolation oltage: 43 ~ Industry standard outline ohs compliant Height: 3 mm Base plate: DCB ceramic educed weight dvanced power cycling Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. 27 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified
MDN24U22ED ectifier Symbol SM M I I Definition 22 22 T 25 C J T 5 C atings typ. max. 23 F forward voltage drop I 8 T 25 C.27 F T C 9 C thermal resistance junction to case.35 K/W D max. non-repetitive reverse blocking voltage reverse current I F Conditions 8 T 25 C J F threshold voltage T J 5 C.79 for power loss calculation only r F slope resistance 5. mω thjc thch max. repetitive reverse blocking voltage T 25 C J bridge output current thermal resistance case to heatsink I F 24 I F 24 rectangular d 2 P tot total power dissipation T 25 C 355 W J J T 25 C I FSM max. forward surge current t ms; (5 Hz), sine T J 45 C t 8,3 ms; (6 Hz), sine t ms; (5 Hz), sine t 8,3 ms; (6 Hz), sine C J junction capacitance 7 ; f MHz T 25 C 4 J C T J 5 C I²t value for fusing t ms; (5 Hz), sine T 45 C t 8,3 ms; (6 Hz), sine t ms; (5 Hz), sine t 8,3 ms; (6 Hz), sine T J 5 C T 5 C J J min.. 22 2 2.9.22 2. 24.5.62.28.38.3.9 8.3 7.87 Unit µ m K/W J pf 27 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified
MDN24U22ED Package atings Symbol Definition Conditions min. typ. max. Unit I MS MS current per terminal 2 T J virtual junction temperature -4 5 C T op operation temperature -4 25 C Weight M D dspp/pp dspb/pb T stg storage temperature -4 25 C ISOL mounting torque 3 creepage distance on surface striking distance through air isolation voltage t second t minute terminal to terminal terminal to backside 5/6 Hz, MS; I ISOL m 6. 2. 43 36 76 6 g Nm mm mm Logo 2D Data Matrix XXXXXXXXXX yywwx UL Part number Date Code Location Part description M D N 24 U 22 ED Module Diode High oltage Standard ectifier (> 2) Current ating 3~ ectifier Bridge everse oltage [] Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. MDN24U22ED MDN24U22ED Box 6 54878 Equivalent Circuits for Simulation * on die level T 5 C I ectifier J max threshold voltage.79 max slope resistance * 2 mω 27 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified
MDN24U22ED Outlines 3,5 ±,5 D 2,6 ±,5 7 ±,5 Detail Ø 6 Ø 2,5-,3 Ø 2,-,3,5 +,3 or der Montage typ. µm konvex über 75 mm Before mounting typ. µm convex over 75 mm Detail C,8 ±,2 Detail D 5 ± 6,2 ±,5 93 ±,2 79,2,8 ±,5 6,2 9,83 23,64 27,45 42,69 46,5 5,3 54,2 C 65,55 69,36 73,7 76,98 Ø 5,5 +, -,3 44 43 42 4 4 39 38 37 36 35 34 33 32 3 3 29 28 27 26 45 25 46 24 47 23 5.24.43,43 7.62 7,62 45 ±,2 Index 48 22 49 2 5 2 2 3 4 5 6 7 8 9 2 3 4 5 6 7 8 9 7.62 7,62.43,43 5.24 5,24 32 ±,2 4,9 Bemerkung / Note: 7,5 ±,3 - Nichttolerierte Maße nach / Measure without tolerances according DIN ISO 2768-T-m - PCB-Lochmuster / PCB hole pattern: see pin position - Toleranz Pin-Position und PCB-Lochmuster / Tolerance of pin position and PCB hole pattern:. - Montageanleitung / Mounting instruction: www.ixys.com pplication note IXN24 Detail : PCB-Montage / Mounting on PCB - Empfohlene, selbstschneidende Schraube / ecommended, self-tapping screw: EJOT PT (Größe / size: K25) - Max. Schraubenlänge / Max. screw length: PCB-Dicke / thickness + 6 mm (max. Lochtiefe / hole depth) - Empfohlenes Drehmoment / ecommended mounting torque:.5 Nm 39-42 -3 7-9 3-5 28-3 27 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified
MDN24U22ED ectifier 3 2 5 25 I F 2 5 5 T J 25 C T J 25 C T J 5 C.5..5 2. 2.5 F [] Fig. Forward current versus voltage drop per diode I FSM 8 6 T J 5 C 5 Hz, 8% M T J 45 C... t [s] I 2 t 4 [ 2 s] 3 T J 45 C T J 5 C 2 3 4 5 6 7 8 9 t [ms] Fig. 2 Surge overload current Fig. 3 I 2 t versus time per diode 6 4 2 P tot 8 [W] 6 DC.5.4.33.7.8 thh.2 K/W.4 K/W.6 K/W.8 K/W. K/W 2. K/W 2 5 I F()M DC.5.4.33.7.8 4 5 2 2 4 6 8 I F()M 5 5 T amb [ C] Fig. 4 Power dissipation vs. direct output current and ambient temperature 5 5 T C [ C] Fig. 5 Max. forward current vs. case temperature.4.3 Z thjc.2 [K/W]. Constants for Z thjc calculation: i thi (K/W) t i (s).5. 2.3.7 3.9.55 4.57.2 5.5.. t [ms] Fig. 6 Transient thermal impedance junction to case 27 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified