NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88

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NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P Channel device is specifically designed as a load switch using ON Semiconductor state of the art trench technology. The N Channel, with an external resistor (R), functions as a level shift to drive the P Channel. The N Channel MOSFET has internal ESD protection and can be driven by logic signals as low as. V. The NTJDL operates on supply lines from. to. V and can drive loads up to.3 A with. V applied to both V IN and V ON/OFF. Features Extremely Low R DS(on) P Channel Load Switch MOSFET Level Shift MOSFET is ESD Protected Low Profile, Small Footprint Package V IN Range. to. V ON/OFF Range. to. V These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS (T J = C unless otherwise noted) Rating Symbol Value Unit Input Voltage (V DSS, P Ch) V IN. V ON/OFF Voltage (V GS, N Ch) V ON/OFF. V Continuous Load Current (Note ) Power Dissipation (Note ) Steady State Steady State T A = C I L ±.3 A T A = C ±.9 T A = C P D. W T A = C. Pulsed Load Current t p = s I LM ±3.9 A Operating Junction and Storage Temperature T J, T STG to Source Current (Body Diode) I S. A Lead Temperature for Soldering Purposes (/ from case for s) THERMAL CHARACTERISTICS C T L C Characteristic Symbol Max Unit Junction to Ambient Steady State (Note ) R JA 3 C/W Junction to Foot Steady State (Note ) R JF Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Surface mounted on FR board using inch sq pad size (Cu area =.7 in sq [ oz] including traces). V (BR)DSS SIMPLIFIED SCHEMATIC. V 7 m @. V SC (SOT 33) CASE 9B STYLE 3,3 TB = Device Code M = Date Code = Pb Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT D/G R DS(on) TYP 3 m @. V m @. V S G D S 3 D Q Q ORDERING INFORMATION I D MAX ±.3 A MARKING DIAGRAM Device Package Shipping NTJDLTG SC (Pb Free) TB M 3/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD/D. Semiconductor Components Industries, LLC, November, Rev. Publication Order Number: NTJDL/D

NTJDL ELECTRICAL CHARACTERISTICS (T J = C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Q Drain to Source Breakdown Voltage V IN V GS = V, I D = A. V Forward Leakage Current I FL VGS = V, V DS =. V T J = C. A T J = C Q Gate to Source Leakage Current I GSS V DS = V, V GS = ±. V ± na Q Diode Forward On Voltage V SD I S =. A, V GS = V.. V ON CHARACTERISTICS ON/OFF Voltage V ON/OFF.. V Q Gate Threshold Voltage V GS(th) V GS = V DS, I D = A.. V Input Voltage V IN V GS = V DS, I D = A.. V Q Drain to Source On Resistance R DS(on) V ON/OFF =. V V IN =. V I L =. A 3 7 m V IN =. V I L =. A V IN =. V I L =.7 A Load Current I L V DROP. V, V IN =. V, V ON/OFF =. V V DROP.3 V, V IN =. V, V ON/OFF =. V 7 3. A. V IN R Q,3 C V OUT ON/OFF Q C O LOAD C I R R GND Figure. Load Switch Application Components Description Values R Pullup Resistor Typical k to. M * R Optional Slew Rate Control Typical to k * C O, C I Output Capacitance Usually <. F C Optional In Rush Current Control Typical pf *Minimum R value should be at least x R to ensure Q turn on.

NTJDL TYPICAL PERFORMANCE CURVES (T J = C unless otherwise noted) V DROP (V).7.......3.3....... T J = C T J = C... I L (AMPS) V DROP (V)....3.3..... 3.. T J = C T J = C.... 3. I L (AMPS) Figure. V drop vs. I L @ V in =. V Figure 3. V drop vs. I L @ V in =. V R DS(on), DRAIN TO SOURCE RESISTANCE ( )..7... I L = A V ON/OFF =. to V R DS(on), DRAIN TO SOURCE RESISTANCE ( ).3. V in = V. T J = C... T J = C... 3.... 7.. 7 V IN (VOLTS) T J, JUNCTION TEMPERATURE ( C).3... I L = A V ON/OFF =. to V V in =. V Figure. On Resistance vs. Input Voltage Figure. On Resistance Variation with Temperature R DS(on), DRAIN TO SOURCE RESISTANCE (NORMALIZED).7..3..9 I L = A V ON/OFF =. to V.7 V in = V V in =. V 7 T J, JUNCTION TEMPERATURE ( C) Figure. Normalized On Resistance Variation with Temperature 3 3 I L = A V ON/OFF =. V Ci = F Co = F 3 7 Figure 7. Switching Variation R @ V in =. V, R = k 3

NTJDL TYPICAL PERFORMANCE CURVES (T J = C unless otherwise noted) I L = A V on/off = 3 V Ci = F Co = F 3 7 3 3 I L = A V ON/OFF =. V Ci = F Co = F 3 7 Figure. Switching Variation R @ V in =. V, R = k Figure 9. Switching Variation R @ V in =. V, R = k I L = A V on/off = 3 V Ci = F Co = F r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE.... D =.... SINGLE PULSE Normalized to R JA at Steady State ( inch pad).. 3 7 Figure. Switching Variation R @ V in =. V, R = k. P (pk) SQUARE WAVE PULSE DURATION TIME t, (s) t t DUTY CYCLE, D = t /t R JC (t) = r(t) R JC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) T C = P (pk) R JC (t) Figure. FET Thermal Response

NTJDL PACKAGE DIMENSIONS SC (SOT 33) CASE 9B ISSUE W D e NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 9.. CONTROLLING DIMENSION: INCH. 3. 9B OBSOLETE, NEW STANDARD 9B. H E 3 E b PL. (.) M E M MILLIMETERS DIM MIN NOM MAX A..9. A... A3 b...3 C... D... E...3 e. BSC L...3 H E... INCHES MIN NOM MAX.3.37.3.... REF. REF.......7.7...9.3. BSC....7.. A A3 C STYLE 3: PIN. SOURCE. DRAIN 3. DRAIN. SOURCE. GATE. DRAIN A L SOLDERING FOOTPRINT*..97....7...9.7 SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. SCILLC reserves the right to make changes withouurther notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patenights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligenegarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is noor resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 3, Denver, Colorado 7 USA Phone: 33 7 7 or 3 3 Toll Free USA/Canada Fax: 33 7 7 or 3 37 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 9 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 33 79 9 Japan Customer Focus Center Phone: 3 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTJDL/D