Power MOSFET IRFB7N50L, SiHFB7N50L PRODUCT SUMMARY V DS (V) 500 R DS(on) ( ) V GS = 0 V 0.28 Q g (Max.) (nc) 30 Q gs (nc) 33 Q gd (nc) 59 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET FEATURES Low Gate Charge Q g results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Low t rr and Soft Diode Recovery Compliant to RoHS Directive 2002/95/EC APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters TO220AB IRFB7N50LPbF SiHFB7N50LE3 IRFB7N50L SiHFB7N50L Available RoHS* COMPLIANT ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT DrainSource Voltage V DS 500 V GateSource Voltage V GS ± 30 Continuous Drain Current V GS at 0 V T C = 25 C 6 I D T C = 00 C A Pulsed Drain Current a I DM 64 Linear Derating Factor.8 W/ C Single Pulse Avalanche Energy b E AS 390 mj Repetitive Avalanche Current a I AR 6 A Repetitive Avalanche Energy a E AR 22 mj Maximum Power Dissipation T C = 25 C P D 220 W Peak Diode Recovery dv/dt c dv/dt 3 V/ns Operating Junction and Storage Temperature Range T J, T stg 55 to 50 Soldering Recommendations (Peak Temperature) for 0 s 300 d C Mounting Torque 632 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Starting T J = 25 C, L = 3.0 mh, R g = 25, I AS = 6 A (see fig. 2). c. I SD 6 A, di/dt 347 A/μs, V DD V DS, T J 50 C. d..6 mm from case. 0 lbf in. N m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 9098 www.vishay.com S054Rev. B, 2Mar THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9000
IRFB7N50L, SiHFB7N50L THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 62 CasetoSink, Flat, Greased Surface R thcs 0.50 C/W Maximum JunctiontoCase (Drain) R thjc 0.56 SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage V DS V GS = 0 V, I D = 250 μa 500 V V DS Temperature Coefficient V DS /T J Reference to 25 C, I D = ma 0.6 V/ C GateSource Threshold Voltage V GS(th) V DS = V GS, I D = 250 μa 3.0 5.0 V GateSource Leakage I GSS V GS = ± 30 V ± 00 na V DS = 500 V, V GS = 0 V 50 μa Zero Gate Voltage Drain Current I DSS V DS = 400 V, V GS = 0 V, T J = 25 C 2.0 ma DrainSource OnState Resistance R DS(on) V GS = 0 V I D = 9.9 A b 0.28 0.32 Forward Transconductance g fs V DS = 50 V, I D = 9.9 A b S Dynamic Input Capacitance C iss V GS = 0 V, 2760 Output Capacitance C oss V DS = 25 V, 325 f =.0 MHz, see fig. 5 Reverse Transfer Capacitance C rss 37 pf V GS = 0 V V DS =.0 V, f =.0 MHz 3690 Output Capacitance C oss V GS = 0 V V DS = 400 V, f =.0 MHz 84 Effective Output Capacitance C oss eff. V GS = 0 V V DS = 0 V to 400 V c 59 Total Gate Charge Q g 30 GateSource Charge Q gs I V GS = 0 V D = 6 A, V DS = 400 V, see fig. 6 and 3 b 33 nc GateDrain Charge Q gd 59 TurnOn Delay Time t d(on) 2 Rise Time t r V DD = 250 V, I D = 6 A, 5 TurnOff Delay Time t d(off) R g = 7.5, see fig. 0 b 50 ns Fall Time t f 28 DrainSource Body Diode Characteristics Continuous SourceDrain Diode Current I S MOSFET symbol 6 D Pulsed Diode Forward Current a I SM showing the integral reverse A G p n junction diode 64 Body Diode Voltage V SD T J = 25 C, I S = 6 A, V GS = 0 V b.5 V T J = 25 C 70 250 Body Diode Reverse Recovery Time t rr ns T J = 25 C 220 330 I F = 6 A, di/dt = 00 A/μs b T J = 25 C 470 70 Body Diode Reverse Recovery Charge Q rr nc T J = 25 C 80 20 Reverse Recovery Current I RRM 7.3 A Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com Document Number: 9098 2 S054Rev. B, 2Mar THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9000 S
IRFB7N50L, SiHFB7N50L TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 00 00 I D, DraintoSource Current (A) 0 0. Top Bottom VGS 5 V 2 V 0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 5.0 V I D, DraintoSource Current (A) 0 T J = 50 C T J = 25 C 0.0 20 μs PULSE WIDTH T J = 25 C 0. 0 00 V DS, DraintoSource Voltage (V) V DS = 50 V 20 μs PULSE WIDTH 0. 4.0 5.0 6.0 7.0 8.0 9.0 0.0 V GS, GatetoSource Voltage (V) Fig. Typical Output Characteristics Fig. 3 Typical Transfer Characteristics I D, DraintoSource Current (A) 00 0 0. Top Bottom VGS 5 V 2 V 0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 5.0 V 20 μs PULSE WIDTH T J = 25 C 0. 0 00 V DS, DraintoSource Voltage (V) R DS(on), DraintoSource On Resistance (Normalized) 3.0 2.5 2.0.5.0 0.5 0.0 I D = 6 A T J, Junction Temperature V GS = 0 V 60 40 20 0 20 40 60 80 00 20 40 60 Fig. 2 Typical Output Characteristics Fig. 4 Normalized OnResistance vs. Temperature Document Number: 9098 www.vishay.com S054Rev. B, 2Mar 3 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9000
IRFB7N50L, SiHFB7N50L 000 000 0 000 C, Capacitance (pf) 000 00 V GS = 0 V, C iss = C gs C gd, C ds C rss = C gd C oss = C ds C gd C iss C oss f = MHz Shorted I SD, Reverse Drain Current (A) 00 0 T J = 50 C T J = 25 C 0 C rss 0 00 000 V DS, DraintoSource Voltage (V) 0. V GS = 0 V 0.2 0.6 0.9.3.6 V SD, SourcetoDrain Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage Fig. 7 Typical SourceDrain Diode Forward Voltage V GS, GatetoSource Voltage (V) 20 6 2 8 4 I D = 6 A V DS = 400 V V DS = 250 V V DS = 00 V 0 0 30 60 90 20 50 Q G, Total Gate Charge (nc) I D, Drain Current (A) 000 00 0 OPERATING IN THIS AREA LIMITED BY R DS(on) 0 μs 00 μs ms 0 ms T C = 25 C T J = 50 C Single Pulse 0. 0 00 000 0000 V DS, DraintoSource Voltage (V) Fig. 6 Typical Gate Charge vs. GatetoSource Voltage Fig. 8 Maximum Safe Operating Area www.vishay.com Document Number: 9098 4 S054Rev. B, 2Mar THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9000
IRFB7N50L, SiHFB7N50L R D 20 V DS V GS D.U.T. 6 R G V DD I D, Drain Current (A) 2 8 0 V Pulse width µs Duty factor 0. % Fig. 0a Switching Time Test Circuit 4 V DS 90 % 0 25 50 75 00 25 50 T C, Case Temperature ( C) 0 % V GS t d(on) t r t d(off) t f Fig. 9 Maximum Drain Current vs. Case Temperature Fig. 0b Switching Time Waveforms D = 0.50 Thermal Response (Z thjc ) 0. 0.0 0.20 0.0 0.05 0.02 0.0 SINGLE PULSE (THERMAL RESPONSE) P DM t t2 Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc T C 0.00 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase Document Number: 9098 www.vishay.com S054Rev. B, 2Mar 5 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9000
IRFB7N50L, SiHFB7N50L V DS 5 V t p V DS L Driver R G 20 V t p D.U.T I AS 0.0 Ω V DD A A I AS Fig. 2a Unclamped Inductive Test Circuit Fig. 2b Unclamped Inductive Waveforms E AS, Single Pulse Avalanche Energy (mj) 800 640 480 320 60 TOP BOTTOM I D 7 A 0 A 6 A 0 25 50 75 00 25 Starting T J, Junction Temperature ( C) 50 Fig. 2c Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q G 50 kω V GS 2 V 0.2 µf 0.3 µf Q GS Q GD D.U.T. V DS V G V GS Charge Fig. 3a Basic Gate Charge Waveform 3 ma Fig. 3b Gate Charge Test Circuit I G I D Current sampling resistors www.vishay.com Document Number: 9098 6 S054Rev. B, 2Mar THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9000
IRFB7N50L, SiHFB7N50L Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. device under test V DD Driver gate drive P.W. Period D = P.W. Period V GS = 0 V a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. V DS waveform Diode recovery dv/dt V DD Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. V GS = 5 V for logic level devices Fig. 4 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?9098. Document Number: 9098 www.vishay.com S054Rev. B, 2Mar 7 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9000
www.vishay.com Package Information TO220 D L H() Q L() E 2 3 M * b() Ø P A F DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.67 0.83 b 0.69.02 0.027 0.040 b().4.78 0.045 0.070 c 0.36 0.6 0.04 0.024 D 4.33 5.85 0.564 0.624 E 9.96 0.52 0.392 0.44 e 2.4 2.67 0.095 0.05 e() 4.88 5.28 0.92 0.208 F.4.40 0.045 0.055 H() 6.0 6.7 0.240 0.264 J() 2.4 2.92 0.095 0.5 L 3.36 4.40 0.526 0.567 L() 3.33 4.04 0.3 0.59 Ø P 3.53 3.94 0.39 0.55 Q 2.54 3.00 0.00 0.8 ECN: X50364Rev. C, 4Dec5 DWG: 603 Note M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM e b C e() J() ASE Package Picture Xi an Revison: 4Dec5 Document Number: 66542 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9000
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