STB5NK50Z-1, STD5NK50ZT4, STP5NK50Z STP5NK50ZFP, STU5NK50Z Datasheet

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Transcription:

STB5NK50Z-1, STD5NK50ZT4, STP5NK50Z STP5NK50ZFP, STU5NK50Z Datasheet N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH Power MOSFETs in I 2 PAK, DPAK, TO 220, TO 220FP and IPAK packages TAB TAB Features Order codes V DS R DS(on) max. I D Package 2 I PAK 1 2 3 TAB 2 3 1 DPAK 3 TO-220 1 2 STB5NK50Z-1 STD5NK50ZT4 I 2 PAK DPAK STP5NK50Z 500 V 1.5 Ω 4.4 A TO-220 TO-220FP 1 2 3 TAB IPAK 1 2 3 STP5NK50ZFP STU5NK50Z TO-220FP IPAK D(2, TAB) 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected G(1) Applications Switching applications S(3) Product status link STB5NK50Z-1 STD5NK50ZT4 STP5NK50Z STP5NK50ZFP STU5NK50Z AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. DS2834 - Rev 6 - September 2018 For further information contact your local STMicroelectronics sales office. www.st.com

Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter I 2 PAK, DPAK, TO-220, IPAK TO-220FP Unit V DS Drain-source voltage 500 V V GS Gate-source voltage ±30 V I D Drain current (continuous) at T C = 25 C 4.4 4.4 (1) A I D Drain current (continuous) at T C = 100 C 2.7 2.7 (1) A I (2) DM Drain current (pulsed) 17.6 17.6 (1) A P TOT Total dissipation at T C = 25 C 70 25 W ESD V ISO Gate-source human body model (R = 1.5 kω, C = 100 pf) Insulation withstand voltage (RMS) from all three leads to external heat-sink (t = 1 s, T C = 25 C) 3 kv 2.5 kv dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns T j T stg Operating junction temperature range Storage temperature range -55 to 150 C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I SD 4.4 A, di/dt 200 A/μs, V DD V (BR)DSS. Table 2. Thermal data Value Symbol Parameter I 2 PAK, TO-220 TO-220FP DPAK IPAK Unit R thj-case Thermal resistance junction-case 1.78 5 1.78 C/W R thj-amb Thermal resistance junction-ambient 62.5 100 C/W R (1) thj-pcb Thermal resistance junction-pcb 50 C/W 1. When mounted on an 1-inch² FR-4, 2oz Cu board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I AR E AS Avalanche current, repetitive or not-repetitive (pulse width limited by T j Max) Single pulse avalanche energy (starting T j = 25 C, I D = I AR, V DD = 50 V) 4.4 A 130 mj DS2834 - Rev 6 page 2/29

Electrical characteristics 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source breakdown voltage Zero gate voltage drain current Gate body leakage current I D = 1 ma, V GS = 0 V 500 V V GS = 0 V, V DS = 500 V 1 µa V GS = 0 V, V DS = 500 V, T C = 125 C (1) 50 µa V DS = 0 V, V GS = ±20 V ±10 µa V GS(th) Gate threshold voltage V DS = V GS, I D = 50 µa 3 3.75 4.5 V R DS(on) Static drain-source on resistance V GS = 10 V, I D = 2.2 A 1.22 1.5 Ω 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance 535 C oss Output capacitance V DS = 25 V, f = 1 MHz, V GS = 0 V 75 - C rss Reverse transfer capacitance 17 pf C oss eq. (1) Equivalent output capacitance V DS = 0 to 400 V, V GS = 0 V - 45 pf Q g Total gate charge V DD = 400 V, I D = 4.4 A, V GS = 0 to 10 V 20 28 Q gs Q gd Gate-source charge Gate-drain charge (see Figure 16. Test circuit for gate charge behavior) - 4 10 nc 1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f Turn-on delay time Rise time Turn-off delay time Fall time V DD = 250 V, I D = 2.2 A, R G = 4.7 Ω, V GS = 10 V - (see Figure 15. Test circuit for resistive load switching times and Figure 20. Switching time waveform) 15 10 32 15 - ns DS2834 - Rev 6 page 3/29

Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM (1) Source-drain current Source-drain current (pulsed) - 4.4 17.6 A V (2) SD Forward on voltage I SD = 4.4 A, V GS = 0 V - 1.6 V t rr Reverse recovery time I SD = 4.4 A, di/dt = 100 A/µs 310 ns Q rr Reverse recovery charge V DD = 30 V, T j = 150 C (see Figure 17. Test - 1.425 µc I RRM Reverse recovery current circuit for inductive load switching and diode recovery times) 9.2 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)GSO Gate-source breakdown voltage I GS = ±1 ma, I D = 0 A ±30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DS2834 - Rev 6 page 4/29

Electrical characteristics curves 2.1 Electrical characteristics curves Figure 1. Safe operating area for I 2 PAK, DPAK, TO-220, IPAK Figure 2. Thermal impedance for I 2 PAK, DPAK, TO-220, IPAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP K GC20940 10-1 10-2 10-3 10-4 10-3 10-2 10-1 10 0 t p (s) DS2834 - Rev 6 page 5/29

Electrical characteristics curves Figure 5. Output characterisics Figure 6. Transfer characteristics Figure 7. Static drain-source on resistance Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature DS2834 - Rev 6 page 6/29

Electrical characteristics curves Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristic Figure 13. Normalized V (BR)DSS vs temperature Figure 14. Maximum avalanche energy vs temperature V (BR)DSS (norm) DS2834 - Rev 6 page 7/29

Test circuits 3 Test circuits Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior VDD VD RL + 2200 μf 3.3 μf VDD VGS 12 V IG= CONST 47 kω 100 Ω 100 nf D.U.T. 1 kω VGS pulse width RG D.U.T. pulse width 2200 μf + 2.7 kω 47 kω VG 1 kω AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit G 25 Ω A D D.U.T. S B A fast diode B A B G 100 µh 3.3 1000 D µf + µf VDD D.U.T. VD ID L + 2200 µf 3.3 µf VDD + _ RG S Vi pulse width D.U.T. AM01471v1 AM01470v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform V(BR)DSS t on t off VD t d(on) t r t d(off) t f 90% 90% IDM ID 0 10% V DS 10% VDD VDD V GS 90% AM01472v1 0 10% AM01473v1 DS2834 - Rev 6 page 8/29

Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS2834 - Rev 6 page 9/29

I²PAK package information 4.1 I²PAK package information Figure 21. I²PAK package outline 0004982_Rev_H DS2834 - Rev 6 page 10/29

I²PAK package information Table 9. I²PAK package mechanical data Dim. mm Min. Typ. Max. A 4.40-4.60 A1 2.40-2.72 b 0.61-0.88 b1 1.14-1.70 c 0.49-0.70 c2 1.23-1.32 D 8.95-9.35 e 2.40-2.70 e1 4.95-5.15 E 10-10.40 L 13-14 L1 3.50-3.93 L2 1.27-1.40 DS2834 - Rev 6 page 11/29

DPAK (TO-252) type A package information 4.2 DPAK (TO-252) type A package information Figure 22. DPAK (TO-252) type A package outline 0068772_A_25 DS2834 - Rev 6 page 12/29

DPAK (TO-252) type A package information Table 10. DPAK (TO-252) type A mechanical data Dim. mm Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 5.10 5.25 E 6.40 6.60 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 1.00 R 0.20 V2 0 8 DS2834 - Rev 6 page 13/29

DPAK (TO-252) type E package information 4.3 DPAK (TO-252) type E package information Figure 23. DPAK (TO-252) type E package outline 0068772_type-E_rev.25 DS2834 - Rev 6 page 14/29

DPAK (TO-252) type E package information Table 11. DPAK (TO-252) type E mechanical data Dim. mm Min. Typ. Max. A 2.18 2.39 A2 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 6.73 E1 4.32 e 2.286 e1 4.572 H 9.94 10.34 L 1.50 1.78 L1 2.74 L2 0.89 1.27 L4 1.02 Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25 DS2834 - Rev 6 page 15/29

DPAK (TO-252) packing information 4.4 DPAK (TO-252) packing information Figure 25. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E B1 K0 B0 F W For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v1 DS2834 - Rev 6 page 16/29

DPAK (TO-252) packing information Figure 26. DPAK (TO-252) reel outline B 40mm min. access hole at slot location T D C A N Full radius Tape slot in core for tape start 2.5mm min.width G measured at hub AM06038v1 Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DS2834 - Rev 6 page 17/29

TO-220 type A package information 4.5 TO-220 type A package information Figure 27. TO-220 type A package outline 0015988_typeA_Rev_21 DS2834 - Rev 6 page 18/29

TO-220 type A package information Table 13. TO-220 type A package mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øp 3.75 3.85 Q 2.65 2.95 DS2834 - Rev 6 page 19/29

TO-220FP package information 4.6 TO-220FP package information Figure 28. TO-220FP package outline 7012510_Rev_12_B DS2834 - Rev 6 page 20/29

TO-220FP package information Table 14. TO-220FP package mechanical data Dim. mm Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DS2834 - Rev 6 page 21/29

IPAK (TO-251) type A package information 4.7 IPAK (TO-251) type A package information Figure 29. IPAK (TO-251) type A package outline 0068771_IK_typeA_rev14 DS2834 - Rev 6 page 22/29

IPAK (TO-251) type A package information Table 15. IPAK (TO-251) type A package mechanical data Dim. mm Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 B5 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 1.00 V1 10 DS2834 - Rev 6 page 23/29

IPAK (TO-251) type C package information 4.8 IPAK (TO-251) type C package information Figure 30. IPAK (TO-251) type C package outline 0068771_IK_typeC_rev14 DS2834 - Rev 6 page 24/29

IPAK (TO-251) type C package information Table 16. IPAK (TO-251) type C package mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.35 A1 0.90 1.00 1.10 b 0.66 0.79 b2 0.90 b4 5.23 5.33 5.43 c 0.46 0.59 c2 0.46 0.59 D 6.00 6.10 6.20 D1 5.20 5.37 5.55 E 6.50 6.60 6.70 E1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 H 16.18 16.48 16.78 L 9.00 9.30 9.60 L1 0.80 1.00 1.20 L2 0.90 1.08 1.25 θ1 3 5 7 θ2 1 3 5 DS2834 - Rev 6 page 25/29

Ordering information 5 Ordering information Table 17. Order codes Order code Marking Package Packing STB5NK50Z-1 B5NK50Z I 2 PAK Tube STD5NK50ZT4 D5NK50Z DPAK Tape and reel STP5NK50Z P5NK50Z TO-220 Tube STP5NK50ZFP P5NK50ZFP TO-220FP Tube STU5NK50Z 5NK50Z IPAK Tube DS2834 - Rev 6 page 26/29

Revision history Table 18. Document revision history Date Version Changes 16-Jun-2004 4 D 2 PAK Included. New Stylesheet. 06-Sep-2005 5 Inserted Ecopack indication 18-Sep-2018 6 The part number STB5NK50Z has been moved to a separate datasheet. Added part number STU5NK50Z. Updated Section 4 Package information. DS2834 - Rev 6 page 27/29

Contents Contents 1 Electrical ratings...2 2 Electrical characteristics...3 2.1 Electrical characteristics curves...5 3 Test circuits...8 4 Package information...9 4.1 I²PAK package information...9 4.2 DPAK (TO-252) type A package information... 11 4.3 DPAK (TO-252) type E package information... 13 4.4 DPAK (TO-252) packing information... 15 4.5 TO-220 type A package information...17 4.6 TO-220FP package information...19 4.7 IPAK (TO-251) type A package information... 21 4.8 IPAK (TO-251) type C package information... 23 5 Ordering information...26 Revision history...27 DS2834 - Rev 6 page 28/29

IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 2018 STMicroelectronics All rights reserved DS2834 - Rev 6 page 29/29