UNISONIC TECHNOLOGIES CO., LTD UFZ24N-F

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Transcription:

UNISONIC TECHNOLOGIES CO., LTD UFZ24N-F 17A, 55V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFZ24N-F is a N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UFZ24N-F is suitable for high efficiency synchronous rectification in SMPS, primary side switch and telecom bricks. FEATURES * R DS(ON) < 43 mω @ =10V, I D =10A * High switching speed * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 UFZ24NL-TA3-T UFZ24NG-TA3-T TO-220 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source MARKING 1 of 5 Copyright 2018 Unisonic Technologies Co., Ltd

ABSOLUTE MAXIMUM RATINGS (T C =25 С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage S 55 V Gate-Source Voltage S ±20 V Drain Current Continuous I D 17 A Pulsed I DM 68 A Avalanche Energy Single Pulsed (Note 3) E AS 172 mj Peak Diode Recovery dv/dt (Note 4) dv/dt 5.2 V/ns Power Dissipation P D 38 W Junction Temperature T J +150 C Storage Temperature Range T STG -55 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L=1.4mH, I AS =15.7A, =25V, R G =25 Ω, Starting T J = 25 C 4. I SD 17A, di/dt 200A/μs, BS, Starting T J = 25 C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θ JA 62.5 C/W Junction to Case θ JC 3.3 C/W ELECTRICAL CHARACTERISTICS (T J =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BS I D =250µA, =0V 55 V Drain-Source Leakage Current I DSS =55V, =0V 1 µa Gate-Source Leakage Current Forward =+20V, =0V +100 na I GSS Reverse =-20V, =0V -100 na ON CHARACTERISTICS Gate Threshold Voltage (TH) =, I D =250µA 1.5 3.5 V Static Drain-Source On-State Resistance R DS(ON) =10V, I D =10A 43 mω DYNAMIC PARAMETERS Input Capacitance C ISS 710 pf Output Capacitance C OSS =25V, =0V, f=1.0mhz 210 pf Reverse Transfer Capacitance C RSS 40 pf SWITCHING PARAMETERS Total Gate Charge (Note 1) Q G 26.5 nc =30V, =10V, I D =17A, Gate to Source Charge Q GS 6.3 nc I G =1mA(Note 1, 2) Gate to Drain Charge Q GD 6.8 nc Turn-ON Delay Time (Note 1) t D(ON) 8.0 ns Rise Time t R =30V, =10V, I D =17A, 19 ns Turn-OFF Delay Time t D(OFF) R G =25Ω (Note 1, 2) 58 ns Fall-Time t F 26 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 17 A Maximum Body-Diode Pulsed Current I SM 68 A Drain-Source Diode Forward Voltage (Note 1) V SD I S =10A, =0V 1.3 V Reverse Recovery Time (Note 1) t rr I S =10A, =0V, 44.6 ns Reverse Recovery Charge Q rr di F /dt =100A/µs 71.2 nc Note: 1. Pulse Test: Pulse width 300μs, Duty cycle 2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD 2 of 5

TEST CIRCUITS AND WAVEFORMS + R G - L I SD Driver Same Type as dv/dt controlled by R G I SD controlled by pulse period (Driver) Gate Pulse Width D= Gate Pulse Period 10V I FM, Body Diode Forward Current I SD () di/dt I RM Body Diode Reverse Current () Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD 3 of 5

TEST CIRCUITS AND WAVEFORMS Same Type as 10V Q G Q GS Q GD Charge Gate Charge Test Circuit Gate Charge Waveforms BS E AS = 1 2 2 LIAS BS - R G I D L BS I AS I D (t) t P (t) t P Time Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD 4 of 5

TYPICAL CHARACTERISTICS 14 Gate Charge vs. Gate to Source Voltage 1000 Capacitance Characteristics (Non-Repetitive) Gate Threshold Voltage, VGS (V) 12 10 8 6 4 2 =30V, I D =17A Capacitance, C (pf) 100 CISS COSS CRSS 0 0 10 20 30 40 50 60 70 80 90 Gate Charge, Q G (nc) 10 0 10 20 30 40 50 60 Drain to Source Voltage, (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD 5 of 5