Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note AN01) Fully Characterized Avalanche Voltage and Current l l l S R DS(on) max I D 200V 0.040Ω 56A TO-220AB Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 56 I D @ T C = 0 C Continuous Drain Current, V GS @ V 40 A I DM Pulsed Drain Current 220 P D @T C = 25 C Power Dissipation 380 W Linear Derating Factor 2.5 W/ C V GS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt ƒ V/ns T J Operating Junction and -55 to 175 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 0.40 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θja Junction-to-Ambient 62 Notes through are on page 8 www.irf.com 1 7/7/04
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 200 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient 0.26 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance 0.040 Ω V GS = V, I D = 34A V GS(th) Gate Threshold Voltage 2.0 4.0 V = V GS, I D = 250µA I DSS Drain-to-Source Leakage Current 25 V µa DS = 200V, V GS = 0V 250 = 160V, V GS = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage 0 V GS = 20V na Gate-to-Source Reverse Leakage -0 V GS = -20V Dynamic @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 29 S = 50V, I D = 34A Q g Total Gate Charge 150 220 I D = 34A Q gs Gate-to-Source Charge 24 37 nc = 160V Q gd Gate-to-Drain ("Miller") Charge 67 0 V GS = V t d(on) Turn-On Delay Time 17 V DD = 0V t r Rise Time 64 ns I D = 34A t d(off) Turn-Off Delay Time 52 R G = 1.8Ω t f Fall Time 50 V GS = V C iss Input Capacitance 4220 V GS = 0V C oss Output Capacitance 580 = 25V C rss Reverse Transfer Capacitance 140 pf ƒ = 1.0MHz C oss Output Capacitance 5080 V GS = 0V, = 1.0V, ƒ = 1.0MHz C oss Output Capacitance 230 V GS = 0V, = 160V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance 500 V GS = 0V, = 0V to 160V Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 450 mj I AR Avalanche Current 34 A E AR Repetitive Avalanche Energy 38 mj Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 56 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 220 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = 34A, V GS = 0V t rr Reverse Recovery Time 240 360 ns T J = 25 C, I F = 34A Q rr Reverse RecoveryCharge 2.1 3.2 µc di/dt = 0A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) 2 www.irf.com
I D, Drain-to-Source Current (Α) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFB260NPbF 00 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 00 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 4.5V 1 1 0.1 20µs PULSE WIDTH Tj = 25 C 0.1 1 0, Drain-to-Source Voltage (V) 0.1 20µs PULSE WIDTH Tj = 175 C 0.1 1 0, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 00.00 3.5 I D = 56A T J = 175 C 3.0 0.00 T J = 25 C.00 = 15V 20µs PULSE WIDTH 1.00 3.0 5.0 7.0 9.0 11.0 13.0 15.0 V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 2.0 1.5 1.0 0.5 V GS = V 0.0-60 -40-20 0 20 40 60 80 0 120 140 160 180 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance(pF) IRFB260NPbF 0000 000 V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 12 I D = 34A = 160V = 0V = 40V 00 0 Ciss Coss Crss V GS, Gate-to-Source Voltage (V) 7 5 2 1 0 00, Drain-to-Source Voltage (V) 0 0 30 60 90 120 150 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 00.00 00 OPERATION IN THIS AREA LIMITED BY R DS (on) 0.00 T J = 175 C 0.00 T 1.00 J = 25 C V GS = 0V 0. 0.0 0.5 1.0 1.5 2.0 V SD, Source-toDrain Voltage (V) 1 Tc = 25 C Tj = 175 C Single Pulse 0µsec 1msec msec 1 0 00, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
60 R D 50 V GS D.U.T. R G - V DD I D, Drain Current (A) 40 30 20 V Pulse Width 1 µs Duty Factor 0.1 % Fig a. Switching Time Test Circuit 90% 0 25 50 75 0 125 150 175 T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 1 Thermal Response (Z thjc ) 0.1 0.01 D = 0.50 0.20 0. 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t 1 t 2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc T C 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
15V 850 I D L DRIVER 680 TOP BOTTOM 14A 24A 34A R G D.U.T I AS - V DD A 20V tp 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS tp I AS E AS, Single Pulse Avalanche Energy (mj) 5 340 170 0 25 50 75 0 125 150 175 Starting T, Junction Temperature ( J C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. V Q GS Q G Q GD 12V.2µF 50KΩ.3µF D.U.T. V - DS V G V GS 3mA Charge Fig 13a. Basic Gate Charge Waveform I G I D Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 www.irf.com
Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt V DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET Power MOSFETs www.irf.com 7
TO-220AB Package Outline 2.87 (.113) 2.62 (.3).54 (.415).29 (.405) 3.78 (.149) 3.54 (.139) - A - 4.69 (.185) 4.20 (.165) - B - 1.32 (.052) 1.22 (.048) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1 2 3 4 6.47 (.255) 6. (.240) 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 1- GATE 2 - DRAIN 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - DRAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 1.40 (.055) 3X 1.15 (.045) 2.54 (.0) 2X 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.4) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF LOT CODE 1789 AS S EMB LED ON WW 19, 1997 IN T HE ASS E MBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E RNAT IONAL RECTIFIER LOGO AS S E MB L Y LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.78mH R G = 25Ω, I AS = 34A. ƒ I SD 34, di/dt 480A/µs, V DD V (BR)DSS, T J 175 C Pulse width 300µs; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while is rising from 0 to 80% S Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.7/04 8 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/