D D D FDMS7658AS N-Channel PowerTrench SyncFET TM 3 V, 76 A,.9 mω Features Max r DS(on) =.9 mω at V GS = V, I D = 8 A Max r DS(on) =. mω at V GS = 7 V, I D = 6 A Advanced Package and Silicon Combination for Low r DS(on) and High Efficiency SyncFET TM Schottky Body Diode MSL Robust Package Design % UIL Tested RoHS Compliant Top Bottom General Description The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest r DS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU Low Side Switch Networking Point of Load Low Side Switch Telecom Secondary Side Rectification S S S Pin G Power 56 D MOSFET Maximum Ratings T A = 5 C unless otherwise noted. Symbol Parameter Ratings Units V DS Drain to Source Voltage 3 V V GS Gate to Source Voltage (Note ) ± V I D Thermal Characteristics Drain Current -Continuous T C = 5 C (Note 5) 76 -Continuous T C = C (Note 5) -Continuous T A = 5 C (Note a) 9 -Pulsed (Note 6) 67 dv/dt MOSFET dv/dt.5 V/ns E AS Single Pulse Avalanche Energy (Note 3) 6 mj Power Dissipation T C = 5 C 89 P D Power Dissipation T A = 5 C (Note a).5 T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C A W R θjc Thermal Resistance, Junction to Case. R θja Thermal Resistance, Junction to Ambient (Note a) 5 Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity FDMS7658AS FDMS7658AS Power 56 3 mm 3 units Semiconductor Components Industries, LLC. October-7, Rev. Publication Order Number: FDMS7658AS/D
Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = ma, V GS = V 3 V ΔBV DSS Breakdown Voltage Temperature ΔT J Coefficient I D = ma, referenced to 5 C 3 mv/ C I DSS Zero Gate Voltage Drain Current V DS = V, V GS = V 5 μa I GSS Gate to Source Leakage Current, Forward V GS = V, V DS = V na On Characteristics (Note ) V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = ma..7 3. V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient. I D = ma, referenced to 5 C -5 mv/ C V GS = V, I D = 8 A.5.9 V r DS(on) Static Drain to Source On Resistance GS = 7 V, I D = 6 A.7. mω V GS =.5 V, I D = 3 A.9. V GS = V, I D = 8 A, T J = 5 C..6 g FS Forward Transconductance V DS = 5 V, I D = 8 A 8 S Dynamic Characteristics C iss Input Capacitance 555 735 pf V DS = 5 V, V GS = V, C oss Output Capacitance 685 pf f = MHz C rss Reverse Transfer Capacitance 5 3 pf R g Gate Resistance...9 Ω Switching Characteristics t d(on) Turn-On Delay Time 36 ns t r Rise Time V DD = 5 V, I D = 8 A, 8 7 ns t d(off) Turn-Off Delay Time V GS = V, R GEN = 6 Ω 3 7 ns t f Fall Time 5 ns Q g Total Gate Charge V GS = V to V 78 9 nc Q g Total Gate Charge V GS = V to.5 V V DD = 5 V, 35 9 nc Q gs Gate to Source Gate Charge I D = 8 A 6. nc Q gd Gate to Drain Miller Charge 6.6 nc Drain-Source Diode Characteristics V GS = V, I S = A (Note ).38.9 V SD Source to Drain Diode Forward Voltage V V GS = V, I S = 8 A (Note ).7.3 t rr Reverse Recovery Time 6 75 ns I F = 8 A, di/dt = 3 A/μs Q rr Reverse Recovery Charge 73 7 nc Notes:. R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 5 C/W when mounted on a in pad of oz copper. b. 5 C/W when mounted on a minimum pad of oz copper.. Pulse Test: Pulse Width < 3 μs, Duty cycle <.%. 3. E AS of 6 mj is based on starting T J = 5 C, L = mh, I AS = 8 A, V DD = 7 V, V GS = V. % test at L =.3 mh, I AS = 8 A.. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. 6. Pulsed Id please refer to Fig SOA graph for more details.
Typical Characteristics T J = 5 C unless otherwise noted. ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 5 9 6 3 PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX..5..5..6....8 Figure. I D = 8 A V GS = V V GS = V V GS =.5 V V GS = V V GS = 3.5 V V GS = 3 V V DS, DRAIN TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3 6 9 5 I D, DRAIN CURRENT (A) On-Region Characteristics Figure. Normalized On-Resistance vs. Drain Current and Gate Voltage.6-75 -5-5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( o C) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) 5 3 8 6 V GS = 3 V I D = 8 A V GS = 3.5 V V GS =.5 V PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX V GS = V T J = 5 o C T J = 5 o C V GS = V PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX 6 8 V GS, GATE TO SOURCE VOLTAGE (V) I D, DRAIN CURRENT (A) Figure 3. Normalized On- Resistance vs. Junction Temperature 5 9 6 3 PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX V DS = 5 V T J = 5 o C T J = 5 o C T J = -55 o C..5..5 3. 3.5. V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics IS, REVERSE DRAIN CURRENT (A) 3.. Figure. V GS = V T J = 5 o C On-Resistance vs. Gate to Source Voltage T J = -55 o C T J = 5 o C.....6.8.. V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs. Source Current 3
Typical Characteristics T J = 5 C unless otherwise noted. VGS, GATE TO SOURCE VOLTAGE (V) IAS, AVALANCHE CURRENT (A) 8 6 I D = 8 A 6 8 Figure 7. 5 V DD = V V DD = 5 V Q g, GATE CHARGE (nc) V DD = V f = MHz V GS = V 5. 3 V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage T J = 5 o C T J = 5 o C T J = o C.. 5 t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) I D, DRAIN CURRENT (A) 6 8 R θjc =. o C/W V GS =.5 V V GS = V C iss C oss C rss 5 5 75 5 5 T C, CASE TEMPERATURE ( o C) ID, DRAIN CURRENT (A) Figure 9. Unclamped Inductive Switching Capability THIS AREA IS LIMITED BY r DS(on) Figure. Forward Bias Safe Operating Area μs μs ms ms ms SINGLE PULSE T J = MAX RATED. R θjc =. o C/W CURVES BENT TO T C = 5 o C MEASURED DATA... V DS, DRAIN to SOURCE VOLTAGE (V) P(PK), PEAK TRANSIENT POWER (W) Figure. Maximum Continuous Drain Current vs. Case Temperature SINGLE PULSE R θjc =. o C/W T C = 5 o C. -5 - -3 - - t, PULSE WIDTH (sec) Figure. Single Pulse Maximum Power Dissipation
Typical Characteristics T J = 5 C unless otherwise noted. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. DUTY CYCLE-DESCENDING ORDER D =.5...5.. SINGLE PULSE. -5 - -3 - - t, RECTANGULAR PULSE DURATION (sec) NOTES: Figure 3. Junction-to-Case Transient Thermal Response Curve P DM t t Z θjc (t) = r(t) x R θjc R θjc =. o C/W Peak T J = P DM x Z θjc (t) + T C Duty Cycle, D = t / t 5
Typical Characteristics (continued) SyncFET TM Schottky body diode Characteristics ON Semiconductor s SyncFET TM process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure shows the reverses recovery characteristic of the FDMS7658AS. CURRENT (A) 3 5 5 5 di/dt = 3 A/μs -5 5 5 TIME (ns) Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. I DSS, REVERSE LEAKAGE CURRENT (A) - -3 - -5 T J = 5 o C T J = o C T J = 5 o C -6 5 5 5 3 V DS, REVERSE VOLTAGE (V) Figure. FDMS7658AS SyncFET TM Body Diode Reverse Recovery Characteristic Figure 5. SyncFET TM Body Diode Reverses Leakage vs. Drain-Source Voltage 6
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