Automotive P-Channel 4 V (D-S) 75 C MOSFET SQ39ES PRODUCT SUMMARY V DS (V) - 4 R DS(on) ( ) at V GS = - V.75 R DS(on) ( ) at V GS = - 4.5 V.45 I D (A) - 4.6 Configuration Single FEATURES Halogen-free According to IEC 649-- Definition TrenchFET Power MOSFET AEC-Q Qualified c % R g and UIS Tested Compliant to RoHS Directive /95/EC TO-36 (SOT-3) S G 3 D G S Top View SQ39ES (8H)* * Marking Code D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SOT-3 SQ39ES-T-GE3 ABSOLUTE MAXIMUM RATINGS (T C = 5 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 4 Gate-Source Voltage V GS ± V Continuous Drain Current T C = 5 C - 4.6 I D T C = 5 C -.6 Continuous Source Current (Diode Conduction) I S - 3.7 A Pulsed Drain Current a I DM - 8 Single Pulse Avalanche Current I AS - L =. mh Single Pulse Avalanche Energy E AS 7. mj T Maximum Power Dissipation a C = 5 C 3 P D T C = 5 C W Operating Junction and Storage Temperature Range T J, T stg - 55 to + 75 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount b R thja 66 Junction-to-Foot (Drain) R thjf 5 C/W Notes a. Pulse test; pulse width 3 μs, duty cycle %. b. When mounted on " square PCB (FR-4 material). c. Parametric verification ongoing. S--Rev. C, 7-Nov- Document Number: 65735 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQ39ES SPECIFICATIONS (T C = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS =, I D = - 5 μa - 4 - - V Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = - 5 μa -.5 -. -.5 Gate-Source Leakage I GSS V DS = V, V GS = ± V - - ± na Zero Gate Voltage Drain Current I DSS V GS = V V DS = - 4 V, T J = 5 C - - - 5 μa V GS = V V DS = - 4 V - - - V GS = V V DS = - 4 V, T J = 75 C - - - 5 On-State Drain Current a I D(on) V GS = - V V DS - 5 V - - - A Notes a. Pulse test; pulse width 3 μs, duty cycle %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V GS = - V I D = - 3 A -.6.75 Drain-Source On-State Resistance a R DS(on) V GS = - V I D = - 3 A, T J = 5 C - -.6 V GS = - V I D = - 3 A, T J = 75 C - -.39 V GS = - 4.5 V I D = -.4 A -..45 Forward Transconductance b g fs V DS = - 5 V, I D = - 3 A - 8 - S Dynamic b Input Capacitance C iss - 493 6 Output Capacitance C oss V GS = V V DS = - 5 V, f = MHz - 76 95 pf Reverse Transfer Capacitance C rss - 5 65 Total Gate Charge c Q g -.5 6 Gate-Source Charge c Q gs V GS = - V V DS = - V, I D = - 3 A -.8 - nc Gate-Drain Charge c Q gd -.6 - Gate Resistance R g f = MHz 5 5 Turn-On Delay Time c t d(on) - 5 8 Rise Time c t r V DD = - V, R L = 6.7-7 Turn-Off Delay Time c t d(off) I D - 3 A, V GEN = - V, R g = - 9 9 ns Fall Time c t f - 8 Source-Drain Diode Ratings and Characteristics b Pulsed Current a I SM - - - 8 A Forward Voltage V SD I F = -.5 A, V GS = - -.8 -. V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S--Rev. C, 7-Nov- Document Number: 65735 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQ39ES TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) V GS = V thru 6 V 6 6 8 V GS = 5 V 8 T C = 5 C 4 V GS = 4 V 4 T C = 5 C 4 6 8 Output Characteristics T C = - 55 C 4 6 8 Transfer Characteristics. 5.6..8 T C = 5 C.4 T C = 5 C T C = - 55 C. 4 6 8 Transfer Characteristics g fs -Transconductance (S) T C = 5 C T C = - 55 C 9 T C = 5 C 6 3..6 3. 4.8 6.4 8. Transconductance. 8 7 R DS(on) -On-Resistance (Ω).8.6.4. V GS = 4.5 V V GS = V C - Capacitance (pf) 6 5 4 3 C iss C oss. 4 8 6 On-Resistance vs. Drain Current C rss 5 5 5 3 35 4 Capacitance S--Rev. C, 7-Nov- 3 Document Number: 65735 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQ39ES TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted).5 8 6 4 I D = 3 A V DS = V R DS(on) -On-Resistance (Normalized)..7.3.9 I D = 3 A V GS = V V GS = 4.5 V 4 6 8 Q g -Total Gate Charge (nc) Gate Charge.5-5 - 5 5 5 75 5 5 75 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature..8 I S - Source Current (A).. T J = 5 C T J = 5 C R DS(on) -On-Resistance (Ω).6.4. T J = 5 C...3.6.9..5 V SD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage. T J = 5 C 4 6 8 On-Resistance vs. Gate-to-Source Voltage. -4 I D = ma V GS(th) Variance (V).7.4. -. I D = 5 μa I D = 5 ma -4-44 -46-48 -.5-5 - 5 5 5 75 5 5 75 T J -Temperature( C) Threshold Voltage -5-5 - 5 5 5 75 5 5 75 T J - Junction Temperature ( C) Drain Source Breakdown vs. Junction Temperature S--Rev. C, 7-Nov- 4 Document Number: 65735 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQ39ES THERMAL RATINGS (T A = 5 C, unless otherwise noted) I DM Limited μs. T C = 5 C Single Pulse Limited by R DS(on) * BVDSS Limited ms ms ms s s, DC... * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area Duty Cycle =.5 Normalized Effective Transien t Thermal Impedance. Notes:. P DM..5 t t t.. Duty Cycle, D = t. Per Unit Base = R thja = 66 C/W 3. T JM - T A = P DM Z (t) thja Single Pulse 4. Surface Mounted. -4-3 - - 6 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S--Rev. C, 7-Nov- 5 Document Number: 65735 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQ39ES THERMAL RATINGS (T A = 5 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. Duty Cycle =.5...5. Single Pulse. -4-3 - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (5 C) - Normalized Transient Thermal Impedance Junction-to-Foot (5 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.6", double sided with oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65735. S--Rev. C, 7-Nov- 6 Document Number: 65735 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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