Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dv/dt and di/dt Capability l Lead-Free G IRFS427PbF IRFSL427PbF D D S V DSS G S HEXFET Power MOSFET 2V R DS(on) typ. 8.6m: max. 22m: 72A I D D S D G PD - 9677 D 2 Pak IRFS427PbF TO-262 IRFSL427PbF G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I D @ T C = 25 C 72 Continuous Drain Current, V GS @ V I D @ T C = C Continuous Drain Current, V GS @ V 5 A I DM Pulsed Drain Current c 3 P D @T C = 25 C Maximum Power Dissipation 375 W Linear Derating Factor 2.5 W/ C V GS Gate-to-Source Voltage ± 2 V dv/dt Peak Diode Recovery e 57 V/ns Operating Junction and -55 to 75 C T STG Storage Temperature Range Soldering Temperature, for seconds (.6mm from case) Mounting torque, 6-32 or M3 screw 3 lbxin (.Nxm) Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy d 25 mj I AR Avalanche Current c See Fig. 4, 5, 22a, 22b, A E AR Repetitive Avalanche Energy f mj Thermal Resistance Symbol Parameter Typ. Max. Units R θjc Junction-to-Case jk.4 R θja Junction-to-Ambient ij 4 www.irf.com C/W 9/6/8
IRFS/SL427PbF Static @ = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 2 V V (BR)DSS / Breakdown Voltage Temp. Coefficient.23 V/ C R DS(on) Static Drain-to-Source On-Resistance 8.6 22 mω V GS(th) Gate Threshold Voltage 3. 5. V I DSS Drain-to-Source Leakage Current 2 25 I GSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage - R G(int) Internal Gate Resistance 3. Ω Dynamic @ = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 79 S Q g Total Gate Charge 5 Q gs Gate-to-Source Charge 3 Q gd Gate-to-Drain ("Miller") Charge 3 nc Q sync Total Gate Charge Sync. (Q g - Q gd ) 69 t d(on) Turn-On Delay Time 7 t r Rise Time 8 t d(off) Turn-Off Delay Time 56 ns t f Fall Time 22 C iss Input Capacitance 538 C oss Output Capacitance 4 C rss Reverse Transfer Capacitance 86 pf C oss eff. (ER) Effective Output Capacitance (Energy Related)h 36 C oss eff. (TR) Effective Output Capacitance (Time Related)g 59 Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 76 MOSFET symbol (Body Diode) showing the A I SM Pulsed Source Current 3 integral reverse G (Body Diode)c p-n junction diode. V SD Diode Forward Voltage.3 V = 25 C, I S = 44A, V GS = V f t rr Reverse Recovery Time 36 = 25 C V R = V, ns 39 = 25 C I F = 44A Q rr Reverse Recovery Charge 458 = 25 C di/dt = A/µs f nc 688 = 25 C I RRM Reverse Recovery Current 8.3 A = 25 C t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LSLD) µa na Conditions V GS = V, I D = 25µA Reference to 25 C, I D = 5mAc V GS = V, I D = 44A f V DS = V GS, I D = 25µA V DS = 2V, V GS = V V DS = 2V, V GS = V, = 25 C V GS = 2V V GS = -2V V DS = 5V, I D = 44A I D = 44A Conditions V DS = V V GS = V f I D = 44A, V DS =V, V GS = V V DD = 3V I D = 44A R G = 2.7Ω V GS = V f V GS = V V DS = 5V ƒ =.MHz (See Fig.5) V GS = V, V DS = V to 6V h(see Fig.) V GS = V, V DS = V to 6V g D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by max, starting = 25 C, L =.26mH R G = 25Ω, I AS = 44A, V GS =V. Part not recommended for use above this value. ƒ I SD 44A, di/dt 76A/µs, V DD V (BR)DSS, 75 C. Pulse width 4µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from to 8% V DSS. When mounted on " square PCB (FR-4 or G- Material). For recom mended footprint and soldering techniques refer to application note #AN-994. ˆ R θ is measured at approximately 9 C R θjc value shown is at time zero 2 www.irf.com
C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (Α) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFS/SL427PbF VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V.. 4.5V 6µs PULSE WIDTH Tj = 25 C. V DS, Drain-to-Source Voltage (V). 4.5V 6µs PULSE WIDTH Tj = 75 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics V DS = 5V 6µs PULSE WIDTH 3.5 3. I D = 44A V GS = V = 75 C 2.5 2. = 25 C.5.. 3. 4. 5. 6. 7. 8. V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics.5-6 -4-2 2 4 6 8 2 4 6 8, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature 8 6 V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd C iss 6 2 I D = 44A V DS = 6V V DS = V V DS = 4V 4 8 2 4 C oss C rss 2 4 6 8 2 V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage www.irf.com 3
I SD, Reverse Drain Current (A) Energy (µj) E AS, Single Pulse Avalanche Energy (mj) V (BR)DSS, I D, Drain Current (A) Drain-to-Source Breakdown Voltage (V) I D, Drain-to-Source Current (A) IRFS/SL427PbF OPERATION IN THIS AREA LIMITED BY R DS (on) = 75 C µsec msec = 25 C msec. V GS = V..2.4.6.8..2.4 V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 8 Tc = 25 C Tj = 75 C Single Pulse DC. V DS, Drain-toSource Voltage (V) 26 Fig 8. Maximum Safe Operating Area Id = 5mA 6 24 4 22 2 2 25 5 75 25 5 75 T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature 8-6 -4-2 2 4 6 8 2468, Temperature ( C ) Fig. Drain-to-Source Breakdown Voltage 8. 6. 8 I D TOP 8.2A 3A BOTTOM 44A 6 4. 4 2. 2. 4 8 2 6 2 25 5 75 25 5 75 V DS, Drain-to-Source Voltage (V) Starting, Junction Temperature ( C) Fig. Typical C OSS Stored Energy Fig 2. Maximum Avalanche Energy Vs. DrainCurrent 4 www.irf.com
E AR, Avalanche Energy (mj) Avalanche Current (A) IRFS/SL427PbF Thermal Response ( Z thjc ) D =.5...2..5.2. SINGLE PULSE ( THERMAL RESPONSE ) τj τj τ τ Ci= τi/ri Ci i/ri R R 2 R 3 R R 2 R 3 τ 2 τ 3 τ 2 τ 3. E-6 E-5.... t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case R4 R4 τ4 τ4 τc τ Ri ( C/W) τι (sec).2.9.83333.78.8667.76.3333.8764 Duty Cycle = Single Pulse..5. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Τ j = 25 C and Tstart = 5 C. 25 2 5 5..E-6.E-5.E-4.E-3.E-2.E- TOP Single Pulse BOTTOM % Duty Cycle I D = 44A 25 5 75 25 5 75 Starting, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy vs. Temperature tav (sec) Fig 4. Typical Avalanche Current vs.pulsewidth Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN-5 at www.irf.com). Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 6a, 6b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 3) P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc I av = 2DT/ [.3 BV Z th ] E AS (AR) = P D (ave) t av www.irf.com 5
Q RR - (nc) I RRM - (A) Q RR - (nc) V GS (th) Gate threshold Voltage (V) I RRM - (A) IRFS/SL427PbF 6. 5. I D =.A I D =.ma I D = 25µA 5 4 4. 3 3. 2.. -75-5 -25 25 5 75 25 5 75, Temperature ( C ) Fig 6. Threshold Voltage Vs. Temperature 2 I F = 29A V R = V = 25 C = 25 C 2 3 4 5 6 7 8 9 di f / dt - (A / µs) Fig. 7 - Typical Recovery Current vs. di f /dt 6 3 5 25 4 2 3 5 2 I F = 44A V R = V = 25 C = 25 C 2 3 4 5 6 7 8 9 di f / dt - (A / µs) Fig. 8 - Typical Recovery Current vs. di f /dt I F = 29A V R = V 5 = 25 C = 25 C 2 3 4 5 6 7 8 9 di f / dt - (A / µs) Fig. 9 - Typical Stored Charge vs. di f /dt 3 25 2 5 I F = 44A V R = V 5 = 25 C = 25 C 2 3 4 5 6 7 8 9 di f / dt - (A / µs) Fig. 2 - Typical Stored Charge vs. di f /dt 6 www.irf.com
IRFS/SL427PbF - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 2. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T IAS.Ω - V DD A I AS Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms V DS R D V DS V GS D.U.T. 9% R G - V DD VV GS Pulse Width µs Duty Factor. % % V GS t d(on) t r t d(off) t f Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Current Regulator Same Type as D.U.T. Vds Id 5KΩ Vgs 2V.2µF.3µF V GS D.U.T. V - DS Vgs(th) 3mA I G I D Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform www.irf.com 7
IRFS/SL427PbF D 2 Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D 2 Pak (TO-263AB) Part Marking Information 7,6,6$,5)6:,7 /27&2'(,7(5$7,2$/ $66(%/('2:: 5(&7,),(5,7($66(%/</,(/ /2*2 $66(%/< /27&2'( )6 3$578%(5 '$7(&2'( <($5 :((. /,(/ 25,7(5$7,2$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( )6 3$578%(5 '$7(&2'( 3 '(6,*$7(6/($')5(( 352'8&7237,2$/ <($5 :((. $ $66(%/<6,7(&2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com
IRFS/SL427PbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information (;$3/( 7,6,6$,5// /27&2'( $66(%/('2::,7($66(%/</,(&,7(5$7,2$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( 3$578%(5 '$7(&2'( <($5 :((. /,(& 25,7(5$7,2$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( 3$578%(5 '$7(&2'( 3 '(6,*$7(6/($')5(( 352'8&7237,2$/ <($5 :((. $ $66(%/<6,7(&2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9
IRFS/SL427PbF D 2 Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR.6 (.63).5 (.59) 4. (.6) 3.9 (.53).6 (.63).5 (.59).368 (.45).342 (.35) FEED DIRECTION TRL.85 (.73).65 (.65).6 (.457).4 (.449) 5.42 (.69) 5.22 (.6) 24.3 (.957) 23.9 (.94).9 (.429).7 (.42) 6. (.634) 5.9 (.626).75 (.69).25 (.49) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.5 (.532) 2.8 (.54) 27.4 (.79) 23.9 (.94) 4 33. (4.73) MAX. 6. (2.362) MIN. NOTES :. COMFORMS TO EIA-48. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.4 (.39) 24.4 (.96) 3 3.4 (.97) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) 252-75 TAC Fax: (3) 252-793 Visit us at www.irf.com for sales contact information. 9/28 www.irf.com