TIP2955 PNP SILICON POWER TRANSISTOR

Similar documents
BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS

BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS

BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS

BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS

BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS

B C. absolute maximum ratings at 25 C case temperature (unless otherwise noted) OBSOLETE

TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS

BUL791 NPN SILICON POWER TRANSISTOR

B C E. absolute maximum ratings at 25 C ambient temperature (unless otherwise noted )

7X = Device Marking. Symbol

MMUN2111LT1 SERIES. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series

Darlington Transistors

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

TIP120, 121, 122, 125, 126, 127

LMUN2211LT1 SERIES. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LESHAN RADIO COMPANY, LTD.

DATA SHEET P D * mw C/W. Packing. Packing SOT-23 SOT /Reel 3000/Reel SOT-23 SOT /Reel 3000/Reel SOT-23.

Dual Bias Resistor Transistors

Bias Resistor Transistor

General Purpose Transistor

Dual General Purpose Transistors

E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

Features TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T

NPN MEDIUM POWER SILICON TRANSISTOR

Darlington Transistors

TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR

MMBT3904. REVERSE VOLTAGE 60 Volts FORWARD CURRENT 0.2 Amperes NPN GENERAL PURPOSE TRANSISTOR SOT-23

General Purpose Transistors

UNISONIC TECHNOLOGIES CO., LTD

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors

Obsolete Product(s) - Obsolete Product(s)

UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089

Darlington Transistor TO-3

MUN52xxDWT DEVICE MARKING, RESISTOR VALUES AND ORDERING INFORMATION Device Marking R(K) R2(K) Shipping MUN52DWT SOT-363 7A /Tape&Reel MUN522DW

BDW93C, BDW94C Series

SOT-23 Mark: 1S. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

UNISONIC TECHNOLOGIES CO., LTD MMBT4401

TIP47G, TIP48G, TIP50G. High Voltage NPN Silicon Power Transistors 1.0 AMPERE POWER TRANSISTORS NPN SILICON VOLTS 40 WATTS

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

ST2111FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. Features. Applications. Internal Schematic Diagram. Description.

UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR

Part Type differentiation Ordering code Remarks 2N3904 2N3904-BULK or 2N3904-TAP Bulk / Ammopack

Obsolete Product(s) - Obsolete Product(s)

UNISONIC TECHNOLOGIES CO., LTD MPSA92/93

Emergency lighting LED Voltage regulation SOT-89. Description. Order code Marking Package Packaging. 2STF SOT-89 Tape and reel

Laboratory 5. Transistor and Photoelectric Circuits

TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR

MULTI CHIP ARRAY COMPLEMENTARY 4x 2N2222A 4x 2N2907A COMMON EMITTER BIPOLAR TRANSISTORS MCABT8E2207C6

UNISONIC TECHNOLOGIES CO., LTD

NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/523

Obsolete Product(s) - Obsolete Product(s)

MJE13005 Power Transistor

BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS. Figure 1: Package

C 2 B 1 E 1 E 2 B 2 C 1. Top View

ZXT11N20DF SUMMARY V CEO =20V; R SAT = 2.5A. = 40m ;I C SOT23. SuperSOT4 20V NPN SILICON LOW SATURATION TRANSISTOR

MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/559 JANTXV JANS

MMBT2222A SMALL SIGNAL NPN TRANSISTOR

NPN Silicon Planar High Voltage Transistor

FMMT620 SUMMARY V CEO =80V; R SAT. = 90m ;I C = 1.5A SOT23. SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR

HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR

NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

Darlington Amplifier Transistor

BUX98A. High power NPN transistor. Features. Applications. Description. High voltage capability High current capability Fast switching speed

2STD1360 2STF1360-2STN1360

LMUN2211LT1G SERIES. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LESHAN RADIO COMPANY, LTD.

UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142

2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description

ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: V CEO. = 1A; h FE =60V; I C = PNP: V CEO =

2N6668 Darlington Power Transistor

Bias Resistor Transistors

ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89. SUMMARY BV CEO = -140V : R SAT = 85m ; I C = -3A

ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY. BV CEO = -30V : R SAT = 24m DESCRIPTION FEATURES APPLICATIONS PINOUT

Part Ordering code Marking Remarks MMBT2222A MMBT2222A-GS18 or MMBT2222A-GS08 1P Tape and Reel

UNISONIC TECHNOLOGIES CO., LTD

DATA SHEET. BFR93AW NPN 5 GHz wideband transistor DISCRETE SEMICONDUCTORS Sep 18

Surface Mount Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41411

COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS = -1.25A;

MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS

DATA SHEET. 2N3553 Silicon planar epitaxial overlay transistor DISCRETE SEMICONDUCTORS Oct 27

LM3046 Transistor Array

2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

Obsolete Product(s) - Obsolete Product(s)

1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, VOLTS 30 WATTS

Midium Power Transistors (±50V / ±3A)

DISCRETE SEMICONDUCTORS DATA SHEET

ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = -30V : R SAT = 31m

DISCRETE SEMICONDUCTORS DATA SHEET

ZXTP2012A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE. SUMMARY BV CEO = -60V : R SAT = 38m DESCRIPTION FEATURES APPLICATIONS

MJ11032, Darlington Power Transistors

ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = 100V : R SAT = 36m DESCRIPTION FEATURES

MJ15003, MJ A Complementary Power Transistors

ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = -30V : R SAT = 31m

ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = 30V : R SAT = 28m DESCRIPTION FEATURES APPLICATIONS PINOUT

2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description

Transcription:

Designed for Complementary Use with the TIP3055 Series 90 W at 5 C Case Temperature 15 A Continuous Collector Current Customer-Specified Selections Available B C SOT-93 PACKAGE (TOP VIEW) 1 E 3 Pin is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 5 C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT Collector-base voltage (I E = 0) V CBO -100 V Collector-emitter voltage (I B = 0) (see Note 1) V CER -70 V Emitter-base voltage V EBO -7 V Continuous collector current I C -15 A Continuous base current I B -7 A Continuous device dissipation at (or below) 5 C case temperature (see Note ) P tot 90 W Continuous device dissipation at (or below) 5 C free air temperature (see Note 3) P tot 3.5 W Unclamped inductive load energy (see Note 4) ½LI C 6.5 mj Operating junction temperature range T j -65 to +150 C Storage temperature range T stg -65 to +150 C Lead temperature 3. mm from case for 10 seconds T L 60 C NOTES: 1. This value applies when the base-emitter resistance R BE = 100 Ω.. Derate linearly to 150 C case temperature at the rate of 0.7 W/ C. 3. Derate linearly to 150 C free air temperature at the rate of 8 mw/ C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 0 mh, I B(on) = -0.4 A, R BE = 100 Ω, V BE(off) = 0, R S = 0.1 Ω, V CC = -10 V. 1

electrical characteristics at 5 C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter V (BR)CEO I breakdown voltage C = -30 ma I B = 0 (see Note 5) -60 V I CEO I CEV I EBO h FE V CE(sat) V BE h fe h fe Collector cut-off current Voltage between base and emitter Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio V CE = -30 V I B =0-0.7 ma V CE = -100 V V BE = 1.5 V -5 ma V EB = -7 V I C =0-5 ma V CE = V CE = I B = I B = -4 V -4 V -0.4 A -3.3 A I C = - 4A I C = -10 A I C = - 4A I C = -10A (see Notes 5 and 6) (see Notes 5 and 6) V CE = -4 V I C = -4 A (see Notes 5 and 6) -1.8 V V CE = -10 V I C = -0.5 A f = 1 khz 0 V CE = -10 V I C = -0.5 A f = 1 MHz 3 NOTES: 5. These parameters must be measured using pulse techniques, = 300 µs, duty cycle %. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. 0 5 70-1.1-3 V thermal characteristics PARAMETER MIN TYP MAX UNIT R θjc Junction to case thermal resistance 1.39 C/W R θja Junction to free air thermal resistance 35.7 C/W resistive-load-switching characteristics at 5 C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT t on Turn-on time I C = -6 A I B(on) = -0.6 A I B(off) = 0.6 A 0.4 µs t off Turn-off time V BE(off) = 4 V R L = 5 Ω = 0 µs, dc % 0.7 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

TYPICAL CHARACTERISTICS 1000 TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT V CE = -4 V T C = 5 C = 300 µs, duty cycle < % TCS638AD h FE - DC Current Gain 100 10-0 01-0 1-1 0-10 I C - Collector Current - A Figure 1. MAXIMUM SAFE OPERATING REGIONS I C - Collector Current - A -100-10 -1 0 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA SAS638AB = 300 µs, = 1 ms, = 10 ms, DC Operation -0 1-1 0-10 -100-1000 V CE - Collector-Emitter Voltage - V Figure. 3

THERMAL 100 MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS637AB P tot - Maximum Power Dissipation - W 80 60 40 0 0 0 5 50 75 100 15 150 T C - Case Temperature - C Figure 3. 4

MECHANICAL DATA SOT-93 3-pin plastic flange-mounackage This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuierformance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 4,1 4,0 15, 14,7 3,95 4,15 1,37 1,17 1, MAX. 16, MAX. 31,0 TYP. 18,0 TYP. 1 3 1,30 1,10 0,78 0,50 11,1 10,8,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW 5