SEMICONDUCTOR TECHNICAL DATA Order this document by MRF26/D The RF Sub Micron Bipolar Line The MRF26 and MRF26S are designed for broadband commercial and industrial applications at frequencies from 1 to 2 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large signal, common emitter class A and class AB amplifier applications. These devices are suitable for frequency modulated, amplitude modulated and multi carrier base station RF power amplifiers. Guaranteed Two tone Performance at 2 MHz, 26 Volts Output Power 6 Watts (PEP) Power Gain 9 db Efficiency 33% Intermodulation Distortion 3 dbc Characterized with Series Equivalent Large Signal Impedance Parameters S Parameter Characterization at High Bias Levels Excellent Thermal Stability Capable of Handling 3:1 VSWR @ 26 Vdc, 2 MHz, 6 Watts (PEP) Output Power Designed for FM, TDMA, CDMA and Multi Carrier Applications 6 W, 2 MHz RF POWER BROADBAND NPN BIPOLAR CASE 451 4, STYLE 1 (MRF26) CASE 451A 1, STYLE 1 (MRF26S) MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage (IB = ma) VCEO 25 Vdc Collector Emitter Voltage VCES 6 Vdc Collector Base Voltage VCBO 6 Vdc Collector Emitter Voltage (RBE = Ohm) VCER 3 Vdc Base Emitter Voltage VEB 3 Vdc Collector Current Continuous IC Adc Total Device Dissipation @ TC = 25 C Derate above 25 C PD 25 1.43 Storage Temperature Range Tstg 65 to +15 C Operating Junction Temperature TJ 2 C THERMAL CHARACTERISTICS Watts W/ C Rating Symbol Max Unit Thermal Resistance, Junction to Case RθJC.7 C/W MOTOROLA Motorola, Inc. 1997 RF DEVICE DATA 1
ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V(BR)CEO 25 26 Vdc (IC = 5 madc, IB = ) Collector Emitter Breakdown Voltage (IC = 5 madc, VBE = ) Collector Base Breakdown Voltage (IC = 5 madc, IE = ) Reverse Base Emitter Breakdown Voltage (IB = madc, IC = ) Zero Base Voltage Collector Leakage Current (VCE = 3 Vdc, VBE = ) V(BR)CES 6 69 Vdc V(BR)CBO 6 69 Vdc V(BR)EBO 3 3.5 Vdc ICES madc ON CHARACTERISTICS DC Current Gain (VCE = 5 Vdc, IC = 1 Adc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE =, f = 1. MHz) (1) FUNCTIONAL TESTS (In Motorola Test Fixture) Common Emitter Amplifier Power Gain (, Pout = 6 Watts (PEP), ICQ = 2 ma, f1 = 2. MHz, f2 = 2.1 MHz) Collector Efficiency (, Pout = 6 Watts (PEP), ICQ = 2 ma, f1 = 2. MHz, f2 = 2.1 MHz) Intermodulation Distortion (, Pout = 6 Watts (PEP), ICQ = 2 ma, f1 = 2. MHz, f2 = 2.1 MHz) Input Return Loss (, Pout = 6 Watts (PEP), ICQ = 2 ma, f1 = 2. MHz, f2 = 2.1 MHz) Output Mismatch Stress (, Pout = 6 Watts (PEP), ICQ = 2 ma, f1 = 2. MHz, f2 = 2.1 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test) (1) For Information Only. This Part Is Collector Matched. hfe 2 4 Cob 55 pf Gpe 9 9.4 db η 33 35 % IMD 33 3 db IRL 12 19 db ψ No Degradation in Output Power 2
VBB R1 D1 Q1 Q2 L5 L1 L3 B1 C7 C9 + + C6 C12 C1 C3 C C R4 C14 C15 R2 R3 VCC L4 RF INPUT L2 Z1 Z2 Z3 Z4 Z5 C2 C4 C5 DUT Z6 Z7 Z9 C11 Z C13 RF OUTPUT B1 Ferrite Bead, P/N 565965/3B, Ferroxcube C1 µf, 5 V, Electrolytic Capacitor, Mallory C2, C4, C13.6 4. pf, Variable Capacitor, Gigatrim, Johanson C3, C14.1 µf, Chip Capacitor, Kemit C5 15 pf, B Case Chip Capacitor, ATC C6, C12 pf, B Case Chip Capacitor, ATC C7, C9 91 pf, B Case Chip Capacitor, ATC C, C 24 pf, B Case Chip Capacitor, ATC C11 13 pf, B Case Chip Capacitor, ATC C15 47 µf, 5 V, Electrolytic Capacitor, Mallory D1 Diode, Motorola (MUR316T3) L1, L5 12 Turns, 22 AWG,.14 Choke L2, L4.5 inch of 2 AWG, ID Choke L3 12.5 nh Inductor R1 2 x 13 Ω, 1/ W Chip Resistor, Rohm R2 2 x Ω, 1/ W Chip Resistor, Rohm R3, R4 Ω, 1/2 W, Resistor Q1 Transistor, PNP Motorola (BD136) Q2 Transistor, NPN Motorola (MJD47) Board Glass Teflon, Arlon GX 3 55 22, εr = 2.55 Figure 1. Class AB, 1.93 2 GHz Test Fixture Electrical Schematic 3
Vsupply R1 + C3 R2 R5 R3 Q1 VCC VCC Q2 R4 R6 R9 R7 C6 + C L3 B1 R + C C11 R C13 C14 RF INPUT N1 L1 C5 C1 C2 C4 Z1 Z2 Z3 Z4 C7 L2 C12 Z5 Z6 Z7 DUT N2 RF OUTPUT C9 B1 Short Bead, Fair Rite C1, C2.6 4.5 pf, Trimmer, Gigatrim, Johanson C3, C µf, 5 V Electrolytic, Mallory C4, C12 12 pf, Chip Capacitor, ATC C5, C11 91 pf, Chip Capacitor, ATC C6.1 F, Chip Capacitor, ATC C7, C 24 pf, Chip Capacitor, ATC C9.4 2.5 pf, Trimmer, Gigatrim, Johanson C13.1 F, Chip Capacitor, ATC C14 47 F, 63 V Electrolytic, Mallory L1 2 Turn, 27 AWG,.49 ID Coil L2.41 dia.,.7 Length Wire L3 11 Turn, 2 AWG,.19 ID Coil N1, N2 Type N Flange Mount RF 55 22, Connector, Omni Spectra Q1 Transistor, NPN, Motorola (BD135) Q2 Transistor, PNP, Motorola (BD136) R1 27 Chip Resistor, 1/ Watt, Rohm R2 K, 1/4 Watt, Potentiometer R3 4.7 K, Chip Resistor, 1/ Watt, Rohm R4 2 x 4.7 K, Chip Resistor, 1/ Watt, Rohm R5 1., 25 Watt, 1% Resistor, DALE R6 3, Axial Lead, 1 Watt Resistor R7 4.2 K, Chip Resistor, 1/ Watt, Rohm R 3 x 39, Chip Resistors, 1/ Watt, Rohm R9 2 x, Chip Resistor, 1/ Watt, Rohm R Axial Lead, 1 Watt Resistor Board Glass Teflon, Arlon GX 3 55 22, εr = 2.55 Figure 2. Class A, 1.93 2 GHz Test Fixture Electrical Schematic 4
TYPICAL CHARACTERISTICS, OUTPUT POWER (WATTS) Pout 7 6 5 4 3 2 Pout Gpe 11.5 9 ICQ = 2 ma.5 f = 2 MHz Single Tone 2 4 6 Pin, INPUT POWER (WATTS) 11 G pe, GAIN (db), OUTPUT POWER (WATTS).5 9.5 Pout 7 6 5 4 3 Pin = 7 W 5 W 3 W 2 ICQ = 2 ma 1 15 19 195 2 f, FREQUENCY (MHz) Figure 3. Output Power & Power Gain versus Input Power Figure 4. Output Power versus Frequency IMD, INTERMODULATION DISTORTION (dbc) IMD, INTERMODULATION DISTORTION (dbc) 2 3 4 5 6 7 2 25 3 35 4 45 5.1 3rd Order 5th Order 7th Order 2 3 4 5 6 7 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion versus Output Power ICQ = ma 2 ma ICQ = 2 ma f1 = 2. MHz f2 = 2.1 MHz, GAIN (db) Gpe, POWER GAIN (db) G pe.5 9 3 Pout = 6 W (PEP) IMD ICQ = 2 ma 35 f1 = 2. MHz f2 = 2.1 MHz 4 2 22 24 26 2 VCC, COLLECTOR SUPPLY VOLTAGE (Vdc) Figure 6. Power Gain and Intermodulation Distortion versus Supply Voltage 4 ma 7 f1 = 2. MHz ma f1 = 2. MHz 6 ma f2 = 2.1 MHz f2 = 2.1 MHz 6 1..1 1. Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP 9.5.5 7.5 1 11 9 Gpe ICQ = 6 ma 4 ma 2 ma 15 2 25 IMD, INTERMODULATION DISTORTION (dbc) Figure 7. Intermodulation Distortion versus Output Power Figure. Power Gain versus Output Power 5
IC, COLLECTOR CURRENT (Adc) 7 6 5 4 3 2 1 TJ = 175 C 4 MTBF LIMITED 12 Tflange = C 16 2 VCE, COLLECTOR SUPPLY VOLTAGE (Vdc) Tflange = 75 C 24 BREAKDOWN LIMITED 2 Gpe, GAIN (db) 3 Pout = 6 W (PEP) ICQ = 2 ma Gpe 9.5 36 9.5 19 192 η 194 196 f, FREQUENCY MHz) VSWR 19 34 32 2 2 COLLECTOR EFFICIENCY (%) INPUT VSWR 1.3:1 1.2:1 1.1:1 Figure 9. Class A DC Safe Operating Area Figure. Performance in Broadband Circuit 6 1.E+11, OUTPUT POWER (dbm) Pout 4 2 2 4 FUNDAMENTAL 3rd Order 2 Pin, INPUT POWER (dbm) Figure 11. Class A Third Order Intercept Point 3 VCC = 24 Vdc ICQ = 3.5 Adc f1 = 2. MHz f2 = 2.1 MHz 4 5 MTBF FACTOR (HOURS x AMPS 2 ) 1.E+ 1.E+9 1.E+ 1.E+7 1.E+6 1.E+5 5 15 2 25 TJ, JUNCTION TEMPERATURE ( C) This above graph displays calculated MTBF in hours x ampere2 emitter curent. Life tests at elevated temperatures have correlated to better than ±% of the theoretical prediction for metal failure. Divide MTBF factor by IC 2 for MTBF in a particular application. Figure 12. MTBF Factor versus Junction Temperature 6
+j1 + j.5 +j2 f = 1. GHz + j.2 ZOL* Zin f = 1. GHz 1.5 GHz 1.5 GHz 2 GHz 1.95 GHz 1.9 GHz 1.9 GHz 1.95 GHz 2 GHz +j3 +j5 + j Zo = Ω..2.5 1 2 3 5 j j.2 j5 j3 j.5 j2 j1 VCC = 26 V, ICQ = 2 ma, Pout = 6 W (PEP) f MHz 1 15 19 195 Zin(1) Ω 1. + j4. 1.5 + j4. 2. + j4.7 2.5 + j4.7 ZOL* Ω 1.7 + j3.3 2.2 + j2.7 2.4 + j3. 2.3 + j3.2 2 3.5 + j4.7 2. + j3.4 Zin(1)= ZOL* = Conjugate of fixture base terminal impedance. Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. Figure 13. Series Equivalent Input and Output Impedence 7
Table 1. Common Emitter S Parameters at VCE = 24 Vdc, IC = 3.5 Adc f S11 S21 S12 S22 GHz S11 S21 S12 S22 1.5.96 16.32 1.31 6.923 169 1.55.95 167.35 76.31 63.91 169 1.6.91 167.4 7.32 61.9 169 1.65.973 166.45 63.3 53.97 169 1.7.96 165.52 56.33 5.9 16 1.75.951 163.62 46.2 47. 169 1..914 161.76 32.27 39.71 17 1.5.51 161.91 12.24 26.63 171 1.9.79 164 1.2 15.15 5. 174 1.95. 17.94 44.5 7.931 174 2. 172.75 6.6 151.953 172 2.5.934 17.57 5. 152.967 17 2.1.964 16.45 9.15 15.965 169 2.15.977 165.36 9.22 164.955 16 2.2.975 163.3 11.33 165.95 167 2.25.961 161.25 12.49 16.947 167 2.3.942 16.22 139.66 149.93 166 2.35.919 157.19 149.77 142.931 165 2.4.6 156.17 163. 137.922 165 2.45.21 159.15 177.12 122.914 165 2.5.71 161.14 157..156.97 165
PACKAGE DIMENSIONS G 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 192. 2. CONTROLLING DIMENSION: INCH. H E R K D N A 2 3 F B Q 2 PL.25 (.) M T A M B M C SEATING T PLANE INCHES MILLIMETERS DIM MIN MAX MIN MAX A.995 1.5 25.27 25.53 B.3.39 9.65 9.91 C.17.25 4.32 5.21 D.455.465 11.56 11.1 E.6.75 1.52 1.91 F.4.6..15 G. BSC 2.32 BSC H.7.9 1.9 2.29 K.117.137 2.97 3.4 N.595.65 15.11 15.37 Q.12.13 3.5 3.3 R.395.4.3.41 STYLE 1: PIN 1. COLLECTOR 2. BASE 3. EMITTER CASE 451 4 ISSUE D H K E D N 1 2 B F C T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 192. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.615.625 15.62 15. B.395.4.3.41 C.17.25 4.32 5.21 D.455.465 11.56 11.1 E.6.75 1.52 1.91 F.4.6..15 H.7.9 1.9 2.29 K.117.137 2.97 3.4 N.595.65 15.11 15.37 A 3 STYLE 1: PIN 1. COLLECTOR 2. BASE 3. EMITTER CASE 451A 1 ISSUE O 9
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