INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE Features Short circuit rated -µs @25, V GE = 5V Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized for high operating frequency (over 5kHz) See Fig. for urrent vs. Frequency curve Absolute Maximum Ratings PD - 9.25 IRGB2KD2-S Short ircuit Rated UltraFast opack IGBT V ES = 6V V E(sat) 3.5V @V GE = 5V, I = 6.A Parameter Max. Units V ES ollector-to-emitter Voltage 6 V I @ T = 25 ontinuous ollector urrent I @ T = ontinuous ollector urrent 6. I M Pulsed ollector urrent 2 A I LM lamped Inductive Load urrent 2 I F @ T = Diode ontinuous Forward urrent 7. I FM Diode Maximum Forward urrent 2 t sc Short ircuit Withstand Time µs V GE Gate-to-Emitter Voltage ± 2 V P D @ T = 25 Maximum Power Dissipation 6 W P D @ T = Maximum Power Dissipation 24 T J Operating Junction and -55 to +5 T STG Storage Temperature Range Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θj Junction-to-ase - IGBT ------ ------ 2. R θj Junction-to-ase - Diode ------ ------ 3.5 /W R θja Junction-to-Ambient, (PB Mount)** ------ ----- 4 R θja Junction-to-Ambient, typical socket mount ----- ----- 8 Wt Weight ------ 2 (.7) ------ g (oz) ** When mounted on " square PB (FR-4 or G- Material) For recommended footprint and soldering techniques refer to application note #AN-994. G E n-channel Description o-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. SMD-22
Electrical haracteristics @ (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltageƒ 6 ---- ---- V V GE = V, I = 25µA V (BR)ES / T J Temperature oeff. of Breakdown Voltage----.37 ---- V/ V GE = V, I =.ma V E(on) ollector-to-emitter Saturation Voltage ---- 2.4 3.5 I = 6.A V GE = 5V ---- 3.6 ---- V I = A See Fig. 2, 5 ---- 2.8 ---- I = 6.A, T J = 5 V GE(th) Gate Threshold Voltage 3. ---- 5.5 V E = V GE, I = 25µA V GE(th) / T J Temperature oeff. of Threshold Voltage ---- - ---- mv/ V E = V GE, I = 25µA g fe Forward Transconductance.9 3.3 ---- S V E = V, I = 6.A I ES Zero Gate Voltage ollector urrent ---- ---- 25 µa V GE = V, V E = 6V ---- ---- 7 V GE = V, V E = 6V, T J = 5 V FM Diode Forward Voltage Drop ----.4.7 V I = 8.A See Fig. 3 ----.3.6 I = 8.A, T J = 5 I GES Gate-to-Emitter Leakage urrent ---- ---- ± na V GE = ±2V Switching haracteristics @ (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) ---- 7 26 I = 6.A Q ge Gate - Emitter harge (turn-on) ---- 4.3 6.8 n V = 4V Q gc Gate - ollector harge (turn-on) ---- 6.4 See Fig. 8 t d(on) Turn-On Delay Time ---- 59 ---- t r Rise Time ---- 38 ---- ns I = 6.A, V = 48V t d(off) Turn-Off Delay Time ---- 2 V GE = 5V, R G = 5Ω t f Fall Time ---- 8 2 Energy losses include "tail" and E on Turn-On Switching Loss ----.28 ---- diode reverse recovery. E off Turn-Off Switching Loss ----.5 ---- mj See Fig. 9,,, 8 E ts Total Switching Loss ----.43.9 t sc Short ircuit Withstand Time ---- ---- µs V = 36V, V GE = 5V, R G = 5Ω, V PK < 5V t d(on) Turn-On Delay Time ---- 52 ---- T J = 5, See Fig. 9,,, 8 t r Rise Time ---- 35 ---- ns I = 6.A, V = 48V t d(off) Turn-Off Delay Time ---- 7 ---- V GE = 5V, R G = 5Ω t f Fall Time ---- 7 ---- Energy losses include "tail" and E ts Total Switching Loss ----.7 ---- mj diode reverse recovery. L E Internal Emitter Inductance ---- 7.5 ---- nh Measured 5mm from package ies Input apacitance ---- 35 ---- V GE = V oes Output apacitance ---- 45 ---- pf V = 3V See Fig. 7 res Reverse Transfer apacitance ---- 4.7 ---- ƒ =.MHz t rr Diode Reverse Recovery Time ---- 37 55 ns See Fig. ---- 55 9 4 I F = 8.A I rr Diode Peak Reverse Recovery urrent ---- 3.5 5. A See Fig. ---- 4.5 8. 5 V R = 2V Q rr Diode Reverse Recovery harge ---- 65 38 n See Fig. ---- 24 36 6 di/dt = 2A/ µs di (rec)m /dtdiode Peak Rate of Fall of Recovery ---- 24 ---- A/µs See Fig. During t b ---- 2 Notes: ---- V =8%(V 7 ES ), V GE =2V, L=µH, Pulse width 5.µs, Repetitive rating; V GE =2V, pulse width limited by max. junction temperature. ( See fig. 2 ) R G = 5Ω, ( See fig. 9 ) ƒ Pulse width 8µs; duty factor.%. single shot.
LOAD URRENT (A) 8 6 4 2 6% of rated v oltage Duty cycle: 5% T sink = 9 Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 3.5W. f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (Load urrent = I RMS of fundamental) I, ollector-to-emitter urrent (A) T J = 5 V GE= 5V 2µs PULSE WIDTH.. V E, ollector-to-emitter Voltage (V) I, ollector-to-emitter urrent (A) T J = 5 V = V 5µs PULSE WIDTH 5 5 2 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics
Maximum D ollector urrent (A) 8 6 4 2 V GE = 5V V E, ollector-to-emitter Voltage (V) 5. 4. 3. 2. V GE = 5V 8µs PULSE WIDTH I = 2A I = 6.A I = 3.A 25 5 75 25 5 T, ase Temperature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature. -6-4 -2 2 4 6 8 2 4 6 T, ase Temperature ( ) Fig. 5 - ollector-to-emitter Voltage vs. ase Temperature Thermal Response (Z thj ). D =.5.2..5.2. SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DMx Z thj + T...... t, Rectangular Pulse Duration (sec) P DM t t 2 Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-ase
, apacitance (pf) 7 6 5 4 3 2 V GE = V, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res V, Gate-to-Emitter Voltage (V) GE 2 6 2 8 4 V E = 48V I = 6.A V E, ollector-to-emitter Voltage (V) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage 4 8 2 6 2 Q, Total Gate harge (n) g Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switching Losses (mj).48.475.47.465.46 V = 48V V GE = 5V T = 25 I = 6.A Total Switching Losses (mj) R G = 5 Ω V GE = 5V V = 48V I = 2A I = 6.A I = 3.A.455.45 2 25 3 35 4 45 5 55 R G, Gate Resistance ( Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance W. -6-4 -2 2 4 6 8 2 4 6 T, ase Temperature ( ) Fig. - Typical Switching Losses vs. ase Temperature
Total Switching Losses (mj) 2..6.2.8.4 R G = 5 Ω T = 5 V = 48V V GE = 5V I, ollector-to-emitter urrent (A) V GE = 2V T = 25 J SAFE OPERATING AREA. 3 6 9 2 5 I, ollector-to-emitter urrent (A) Fig. - Typical Switching Losses vs. ollector-to-emitter urrent. V E, ollector-to-emitter Voltage (V) Fig. 2 - Turn-Off SOA Instantaneous Forward urrent - I F (A) T J = 5 T J = 25..4.8.2.6 2. 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward urrent
8 V R = 2V V R = 2V I F = 6A t rr - (ns) 6 4 I F = 8.A I IRRM - (A) I F = 8.A I F = 6A I = 4.A F 2 I F = 4.A di f /dt - (A/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt di f /dt - (A/µs) Fig. 5 - Typical Recovery urrent vs. di f /dt 5 4 V R = 2V V R = 2V Q - (n) RR 3 2 I F = 6A I F = 8.A di(rec)m/dt - (A/µs) I F = 4.A I F = 8.A I F = 6A I = 4.A F di f /dt - (A/µs) Fig. 6 - Typical Stored harge vs. di f /dt di f /dt - (A/µs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt
+Vge 9% Vge Same type device as D.U.T. Vce % Vce Ic Ic 9% Ic 8% of Vce 43µF D.U.T. td(off) tf 5% Ic t+5µs Eoff = Vce ic dt t Fig. 8a - Test ircuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t t2 Fig. 8b - Test Waveforms for ircuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id dt = tx % Ic Vcc td(on) t Vce tr 9% Ic 5% Vce Ipk Ic t2 Eon = ie dt Vce t t2 DUT VOLTAGE AND URRENT Vpk tx % Vcc Irr DIODE REVERSE REOVERY ENERGY % Irr DIODE REOVERY WAVEFORMS t4 Erec Vd id dt = t3 Vcc t3 t4 Fig. 8c - Test Waveforms for ircuit of Fig. 8a, Fig. 8d - Test Waveforms for ircuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr
Vg GATE SIGNAL DEVIE UNDER TEST URRENT D.U.T. IRGB2KD2-S VOLTAGE IN D.U.T. URRENT IN D t t t2 Fig. 8e - Macro Waveforms for Test ircuit of Fig. 8a 5V 6µF V V L V * c D.U.T. - 48V 48V R L = 4 X I @25 Fig. 9 - lamped Inductive Load Test ircuit Fig. 2 - Pulsed ollector urrent Test ircuit.54 (.45).29 (.45) 4 4.69 (.85) 4.2 (.65).4 (.55) MAX..32 (.52).22 (.48) 5.49 (.6) 4.73 (.58).4 (.55).5 (.45) 2 3.67 (.42) 9.9 (.39).78 (.7).27 (.5).5 (.45) MIN..93 (.37).69 (.27) 2.79 (.) 2.29 (.9) 2 5 TYP..64 (.25).46 (.8). (.4) 2.89 (.4) 2.64 (.4) LEAD ASSIGNMENTS - GATE 2 - OLLETOR 3 - EMITTER 4 - OLLETOR 2.54 (.) 5.8 (.2) REF. OUTLINE SMD-22 Dimensions in Millimeters and (Inches)