FDB8447L V N-Channel PowerTrench MOSFET V, 5A, 8.5mΩ Features Max r DS(on) = 8.5mΩ at, I D = 4A Max r DS(on) = mω at V GS = 4.5V, I D = A Fast Switching RoHS Compliant D General Description February 7 This N-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to deliver low r DS(on) and optimized BV DSS capability to offer superior performance benefit in the application. Application Inverter Power Supplies D G S TO-263AB FDB Series G S MOSFET Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage V V GS Gate to Source Voltage ± V Thermal Characteristics Drain Current -Continuous (Package limited) T C = 25 C 5 I D -Continuous (Silicon limited) T C = 25 C (Note ) 66 -Continuous T A = 25 C (Note a) 5 A -Pulsed E AS Drain-Source Avalanche Energy (Note 3) 53 mj Power Dissipation T P C = 25 C 6 D Power Dissipation (Note a) 3. W T J, T STG Operating and Storage Junction Temperature Range 55 to +5 C R θjc Thermal Resistance, Junction to Case (Note ) 2. R θja Thermal Resistance, Junction to Ambient (Note a) Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity FDB8447L FDB8447L TO-263AB 33mm 24mm 8 units 7 Fairchild Semiconductor Corporation
Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 25µA, V GS = V V BV DSS Breakdown Voltage Temperature I T J Coefficient D = 25µA, referenced to 25 C 35 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 32V, V GS = V µa I GSS Gate to Source Leakage Current V GS = ±V, V GS = V ± na On Characteristics (Note 2) V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 25µA.9 3 V V GS(th) T J r DS(on) Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance I D = 25µA, referenced to 25 C -5 mv/ C, I D = 4A 7.4 8.5 V GS = 4.5V, I D = A 8.7., I D = 4A, T J =25 C.8 2.4 g FS Forward Transconductance V DS = 5V, I D = 4A 58 S Dynamic Characteristics C iss Input Capacitance 97 26 pf V DS = V, V GS = V, C oss Output Capacitance 25 335 pf f = MHz C rss Reverse Transfer Capacitance 5 225 pf R g Gate Resistance f = MHz. Ω mω Switching Characteristics t d(on) Turn-On Delay Time ns V DD = V, I D = 4A t r Rise Time 6 2 ns, R GEN = 6Ω t d(off) Turn-Off Delay Time 28 45 ns t f Fall Time 4 ns Q g(tot) Total Gate Charge, 37 52 nc V DD =V, I D = 4A Q g(tot) Total Gate Charge, V GS = 5V 28 nc Q gs Gate to Source Gate Charge 6 nc Q gd Gate to Drain Miller Charge 7 nc Drain-Source Diode Characteristics V SD Source to Drain Diode Forward Voltage V GS = V, I S = 4A (Note 2).8.2 V t rr Reverse Recovery Time 28 42 ns I F = 4A, di/dt = A/µs Q rr Reverse Recovery Charge 24 36 nc Notes: : R θja is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θja is determined by the user s board design. a. C/W when mounted on a in 2 pad of 2 oz copper b. 62.5 C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 3µs, Duty cycle < 2.%. 3: Starting T J = 25 C, L = mh, I AS = 7.5A, V DD = V,. 2
Typical Characteristics T J = 25 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 8 6 V GS = 3V 2 3 4 V DS, DRAIN TO SOURCE VOLTAGE (V).6.4.2..8 Figure. I D = 4A V GS = 4.5V V GS = 4V PULSE DURATION = 8µs V GS = 3.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE. PULSE DURATION = 8µs.5 6 8 On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage.6-75 -5-25 25 5 75 25 5 T J, JUNCTION TEMPERATURE ( o C) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) 3. 2.5 2..5 25 5 V GS = 3V I D = 7A V GS = 3.5V V GS = 4.5V ID, DRAIN CURRENT(A) V GS = 4V PULSE DURATION = 8µs 5 3 4 5 6 7 8 9 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) 8 6 PULSE DURATION = 8µs V DD = 5V T J = -55 o C 2 3 4 V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = -55 o C...2.4.6.8..2 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3
Typical Characteristics T J = 25 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) IAS, AVALANCHE CURRENT(A) 8 6 4 2 I D = 4A 3 Q g, GATE CHARGE(nC) Figure 7. V DD = V V DD = V V DD = 3V 5. V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage.. t AV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability CAPACITANCE (pf) I D, DRAIN CURRENT (A) 3 8 6 f = MHz V GS = V Limited by Package C iss C oss C rss V GS = 4.5V R θjc = 2. o C/W 25 5 75 25 5 T C, CASE TEMPERATURE ( o C) Figure. Maximum Continuous Drain Current vs Case Temperature ID, DRAIN CURRENT (A) 3 ms OPERATION IN THIS SINGLE PULSE ms AREA MAY BE TJ = MAX RATED ms LIMITED BY r DS(on) T C = 25 o C.. VDS, DRAIN to SOURCE VOLTAGE (V) Figure. Forward Bias Safe Operating Area us P(PK), PEAK TRANSIENT POWER (W) SINGLE PULSE FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: 5 T c I = I 25 -------------------- 25 T c = 25 o C 5-4 -3-2 - t, PULSE WIDTH (s) Figure 2. Single Pulse Maximum Power Dissipation 4
Typical Characteristics T J = 25 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc 2 DUTY CYCLE-DESCENDING ORDER D =.5.2..5.2. t t 2. NOTES: DUTY FACTOR: D = t /t 2 SINGLE PULSE PEAK T J = P DM x Z θjc x R θjc + T C.5-4 -3-2 - t, RECTANGULAR PULSE DURATION (s) Figure 3. Transient Thermal Response Curve P DM 5
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