STARPOWER SEMICONDUCTOR MOSFET MD680SGN100B3S Molding Type Module 100V/680A 1 in one-package General Description STARPOWER MOSFET Power Module provides very low R DS(on) as well as optimized intrinsic diode. It s designed for the applications such SMPS and DC drives. Features Low R DS(on) Optimized intrinsic reverse diode Low inductance case avoid oscillations Kelvin source terminals for easy drive Isolated copper baseplate using DBC technology Equivalent Circuit Schematic Typical Applications Main and auxiliary AC drives of electric vehicles DC servo and robot drives Battery vehicles UPS equipment Plasma cutting 2012 STARPOWER Semiconductor Ltd. 2/23/2012 1/7 Rev.A
Absolute Maximum Ratings T C =25 unless otherwise noted Symbol Description MD680SGN100B3S Units V DSS Drain-Source Voltage 100 V V GSS Gate-Source Voltage ±30 V I D Drain Current @ T C =25 680 @ T C =80 480 A I F Diode Forward Current 680 A P D Maximum Power Dissipation @ T j =175 1630 W T jmax Maximum Junction Temperature 175 T jop Operating Junction Temperature -40 to +150 T STG Storage Temperature Range -40 to +125 V ISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V Mounting Power Terminal Screw:M5 2.5 to 5.0 Torque Mounting Screw:M6 3.0 to 5.0 N.m Electrical Characteristics of MOSFET T C =25 unless otherwise noted Off Characteristics Drain-Source Breakdown Vol tage 100 V Drain-Source Leakage V DS =V DSS,V GS =0V, Current 100 μa Gate-Source Leakage V GS =V GSS,V DS =0V, Current 400 na V (BR)DSS I DSS I GSS On Characteristics Gate-Source Threshold I D =1.0mA,V DS =V GS, Vol tage 3.0 5.0 V Static Drain-Source I D =400A,V GS =10V, On-Resistance 2.25 mω Forward Transconductance V DS =50V,I D =400A 208 S V GS(th) R DS(on) g fs 2012 STARPOWER Semiconductor Ltd. 2/23/2012 2/7 Rev.A
Switching Characteristics R Gint Internal Gate Resistance 0.68 Ω t d(on) Turn-On Delay Time 25 ns V DD =50V,I D =400A, t r Rise Time 270 ns R G =0.26Ω,V GS =±10 V, t d(off) Turn-Off Delay Time 45 ns t f Fall Time 140 ns Q g Total Gate Charge 1040 nc Q gs Gate-Source Charge I D =400A,V DS =80V, 196 nc Q gd Gate-Drain ("Miller") Charge V GS =10V 640 nc C iss Input Capacitance 27.2 nf C oss Output Capacitance V GS =0V,V DS =25 V, 9.88 nf C rss Reverse Transfer f=1.0mhz Capacitance 3.96 nf L CE Stray Inductance 20 nh Module Lead R CC +EE Resistance,Terminal to Chip T C =25 0.35 mω Electrical Characteristics of Inverse Diode T C =25 unless otherwise noted V SD Diode Forward Vol tage I F =400A,V GS =0V, 1.30 V t rr Diode Reverse Recovery Time V R =50V,I F =400A, 220 ns Q rr Diode Reverse Recovery Charge di/dt=400a/μs, 6.56 μc Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc Junction-to-Case (per MOSFET) 0.092 K/W R θcs Case-to-Sink (Conductive grease applied) 0.035 K/W Weight Weight of Module 300 g 2012 STARPOWER Semiconductor Ltd. 2/23/2012 3/7 Rev.A
1400 1000 1200 25 175 1000 100 I D [A] 800 600 175 I D [A] 400 10 25 200 V GS =10V V DS =50V 0 0 1 2 3 4 5 1 5 6 7 8 9 10 11 12 V DS [V] V GS [V] Fig 1. Mosfet Output Characteristic Fig 2. Mosfet Transfer Characteristic 120 116 112 20 18 16 14 V DS =80V V DS =50V V DS =20V V (BR)DSS [V] 108 104 V GS [V] 12 10 8 100 6 96 92-40 0 40 80 120 160 200 T j [ ] 4 2 0 0 0.3 0.6 0.9 1.2 1.5 Q G [μc] I D =400A Fig 3. Brakedown Voltage vs. Temperature Fig 4. Gate Charge Characteristic 2012 STARPOWER Semiconductor Ltd. 2/23/2012 4/7 Rev.A
1400 0.1 V GS =0V 1200 1000 I SD [A] 800 600 175 25 Z thjc [K/W] 0.01 400 200 0 0 0.4 0.8 1.2 1.6 2 V SD [V] 0.001 i: 1 2 3 4 r i [K/W]: 0.0092 0.0276 0.0368 0.0184 τ i [s]: 0.0100 0.0400 0.0600 0.3000 0.001 0.01 0.1 1 10 t [s] Fig 5. Inverse Diode Output Characteristic Fig 6. Transient Thermal Impedance 2012 STARPOWER Semiconductor Ltd. 2/23/2012 5/7 Rev.A
Package Dimensions Dimensions in Millimeters 2012 STARPOWER Semiconductor Ltd. 2/23/2012 6/7 Rev.A
Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 2012 STARPOWER Semiconductor Ltd. 2/23/2012 7/7 Rev.A