FM8 N-Channel Power Trench MOFET V, 9A,.m Features Max r (on) =.m at V G = V, I = 5A Max r (on) = 3.m at V G =.5V, I =.7A Advanced Package and ilicon combination for low r (on) ML robust package design % UIL tested RoH Compliant Top Bottom General escription May 9 This N-Channel MOFET is produced using Fairchild emiconductor s advanced Power Trench process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application C - C Conversion Pin 5 G tm FM8 N-Channel Power Trench MOFET G 3 7 8 Power 5 MOFET Maximum Ratings T A = 5 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage V V G Gate to ource Voltage ± V Thermal Characteristics rain Current -Continuous (Package limited) T C = 5 C 9 I -Continuous (ilicon limited) T C = 5 C 7 -Continuous T A = 5 C (Note a) 5 A -Pulsed E A ingle Pulse Avalanche Energy (Note 3) 8 mj Power issipation T P C = 5 C Power issipation T A = 5 C (Note a).5 W T J, T TG Operating and torage Junction Temperature Range -55 to +5 C R JC Thermal Resistance, Junction to Case. R JA Thermal Resistance, Junction to Ambient (Note a) 5 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity FM8 FM8 Power 5 3 mm 3 units FM8 Rev.C
Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = 5 A, V G = V V BV Breakdown Voltage Temperature T J Coefficient I = 5 A, referenced to 5 C 3 mv/ C I Zero Gate Voltage rain Current V G = V, V = 3V, A I G Gate to ource Leakage Current V G = ±V, V = V ± na On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = 5 A..9 3. V V G(th) T J Gate to ource Threshold Voltage Temperature Coefficient I = 5 A, referenced to 5 C -7.5 mv/ C V G = V, I = 5A.. r (on) tatic rain to ource On Resistance V G =.5V, I =.7A. 3. m V G = V, I = 5A, T J = 5 C. 3.3 g F Forward Transconductance V = 5V, I = 5A 37 ynamic Characteristics C iss Input Capacitance 55 75 pf V = V, V G = V, C oss Output Capacitance 7 955 pf f = MHz C rss Reverse Transfer Capacitance 7 5 pf R g Gate Resistance f = MHz. FM8 N-Channel Power Trench MOFET witching Characteristics t d(on) Turn-On elay Time 9 35 ns t r Rise Time V = V, I = 5A, 9 9 ns t d(off) Turn-Off elay Time V G = V, R GEN = 8 78 ns t f Fall Time 7 ns Q g Total Gate Charge V G = V to V 78 nc Q g Total Gate Charge V G = V to.5v V = V, 3 5 nc Q gs Gate to ource Charge I = 5A 5 nc Q gd Gate to rain Miller Charge nc rain-ource iode Characteristics V ource to rain iode Forward Voltage V G = V, I = 5A (Note ).8.3 V G = V, I =.A (Note ).7. V t rr Reverse Recovery Time 53 85 ns I F = 5A, di/dt = A/ s Q rr Reverse Recovery Charge nc NOTE:. R JA is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. R JC is guaranteed by design while R CA is determined by the user's board design. a. 5 C/W when mounted on a in pad of oz copper. b. 5 C/W when mounted on a minimum pad of oz copper.. Pulse Test: Pulse Width < 3 s, uty cycle <.%. 3. tarting T J = 5 C, L = 3mH, I A = A, V = V, V G = V FM8 Rev.C
Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE 8 3 Figure..8.....8 I = 5A V G = V V G = V V G =.5V V G = V V G = 3.5V PULE URATION = 8 s UTY CYCLE =.5%MAX V G = 3V V, RAIN TO OURCE VOLTAGE (V) NORMALIZE RAIN TO OURCE ON-REITANCE.5 V G =V 8 I, RAIN CURRENT(A) On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage. -75-5 -5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (m ) 5 3 8 V G = 3V PULE URATION = 8 s UTY CYCLE =.5%MAX I = 5A T J = 5 o C T J = 5 o C V G = 3.5V V G = V V G =.5V PULE URATION = 8 s UTY CYCLE =.5%MAX 8 V G, GATE TO OURCE VOLTAGE (V) FM8 N-Channel Power Trench MOFET Figure 3. Normalized On- Resistance vs Junction Temperature Figure. On-Resistance vs Gate to ource Voltage I, RAIN CURRENT (A) 8 PULE URATION = 8 s UTY CYCLE =.5%MAX V = 5V T J = 5 o C T J = 5 o C T J = -55 o C I, REVERE RAIN CURRENT (A) 8.. V G = V T J = 5 o C T J = 5 o C T J = -55 o C 3 5 V G, GATE TO OURCE VOLTAGE (V) Figure 5. Transfer Characteristics E-3.....8.. V, BOY IOE FORWAR VOLTAGE (V) Figure. ource to rain iode Forward Voltage vs ource Current FM8 Rev.C 3
Typical Characteristics T J = 5 C unless otherwise noted VG, GATE TO OURCE VOLTAGE(V) IA, AVALANCHE CURRENT(A) 8 I = 5A 8 Figure 7. V = V V = 5V V = 5V Q g, GATE CHARGE(nC) f = MHz V G = V 3. V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage T J = 5 o C T J = 5 o C.. t AV, TIME IN AVALANCHE(ms) CAPACITANCE (pf) I, RAIN CURRENT (A) 5 5 Limited by Package V G =.5V V G = V R JC =. o C/W C iss C oss C rss 5 5 75 5 5 T C, CAE TEMPERATURE ( o C) FM8 N-Channel Power Trench MOFET Figure 9. Unclamped Inductive witching Capability Figure. Maximum Continuous rain Current vs Case Temperature I, RAIN CURRENT (A) ms THI AREA I LIMITE BY r (on) ms INGLE PULE. T J = MAX RATE s R JA = 5 o C/W s T A = 5 o C C... V, RAIN to OURCE VOLTAGE (V) Figure. Forward Bias afe Operating Area ms P(PK), PEAK TRANIENT POWER (W) V G = V INGLE PULE R JA = 5 o C/W T A = 5 o C.5-3 - - t, PULE WITH (sec) Figure. ingle Pulse Maximum Power issipation FM8 Rev.C
Typical Characteristics T J = 5 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z JA.. UTY CYCLE-ECENING ORER =.5...5.. INGLE PULE R JA = 5 o C/W E-3-3 - - t, RECTANGULAR PULE URATION (sec) Figure 3. Transient Thermal Response Curve P M t t NOTE: UTY FACTOR: = t /t PEAK T J = P M x Z JA x R JA + T A FM8 N-Channel Power Trench MOFET FM8 Rev.C 5
imensional Outline and Pad Layout FM8 N-Channel Power Trench MOFET FM8 Rev.C
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