General Description The MDD375 uses advanced MagnaChip s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low R DS(ON), Low Gate Charge can be offering superior benefit in the application. MDD375 P-Channel Trench MOSFET, -V, -2.A, 3mΩ Features V DS = -V I D = -2.A @ = -1V R DS(ON) < 3mΩ @ = -1V < 58mΩ @ = -.5V Applications Inverters General purpose applications D G S Absolute Maximum Ratings (T C =25 o ) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS - V Gate-Source Voltage S ±2 V Continuous Drain Current (Note 2) T C=25 o C -2. A T C=1 o C I D -15. A Pulsed Drain Current I DM -5 A Power Dissipation T C=25 o C 1.7 T C=1 o C Single Pulse Avalanche Energy (Note 3) E AS.5 mj Junction and Storage Temperature Range T J, T stg -55~+15 P D 16.7 W o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (Note 1) R θja Thermal Resistance, Junction-to-Case R θjc 3. o C/W October 28. Version 1. 1
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDD375RH -55~15 o C TO-252 Tape & Reel Halogen Free Electrical Characteristics (T J =25 o C unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV DSS I D = -25µA, = V - - - V Gate Threshold Voltage (th) V DS =, I D = -25µA -1. -2. -3. Zero Gate Voltage Drain Current I DSS V DS = -32V, = V - -1 µa Gate Leakage Current I GSS = ±2V, V DS = V - - ±.1 Drain-Source ON Resistance R DS(ON) = -1V, I D = -6A - 32 3 mω = -.5V, I D = -A 3 58 Forward Transconductance g FS V DS = -1V, I D = -6A 12 - S Dynamic Characteristics Total Gate Charge Q g - 19.2 - Gate-Source Charge Q gs V DD = -28V, I D = -6A, = 1V - 3.1 - nc Gate-Drain Charge -. - Q gd Input Capacitance C iss - 868 - Reverse Transfer Capacitance C rss V DS = -25V, = V, f = 1.MHz - 72 - Output Capacitance - 125 - C oss Turn-On Delay Time t d(on) - 11. - Turn-On Rise Time t r = -1V,V DD = -2V, - 21. - Turn-Off Delay Time t d(off) I D = -1A, R GEN=3.3Ω - 32.5 - Turn-Off Fall Time Drain-Source Body Diode Characteristics t f - 15. - Source-Drain Diode Forward Voltage V SD I S = -6A, = V - -.88 1.2 V Reverse Recovery Time trr I S = -6A, di/dt=1a/us - 37 - ns Reverse Recovery Charge Qrr - 2 - nc pf ns Note : 1. Surface mounted RF board with 2oz. Copper. 2. P D is based on T J(MAX)=15 O C, P D(T C=25 O C) is based on R θjc. 3. Starting T J=25 C, L=1mH, I AS=-9A V DD=-2V, =-1V October 28. Version 1. 2
-I D 25 2 15 1 5 = -1V -8V -.5V -.V..5 1. 1.5 2. 2.5 3. Fig.1 On-Region Characteristics -3.V Drain-Source On-Resistance [mω] -V DS, Drain-Source Voltage [V] 5 1 15 2 25 12 1 8 6 2 = -.5V = -1V -I D Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 1.8 12 1.6 Notes : 1. = 1 V 2. I D = -6 A 1 R DS(ON), (Normalized) Drain-Source On-Resistance 1. 1.2 1..8 R DS(ON) [mω ], Drain-Source On-Resistance 8 6 2 = 125 = 25.6-5 -25 25 5 75 1 125 15 T J, Junction Temperature [ o C] Fig.3 On-Resistance Variation with Temperature 2 6 8 1, Gate to Source Volatge [V] Fig. On-Resistance Variation with Gate to Source Voltage 2 Notes : V DS = -5V Notes : = V I D 16 12 8 =125 25-55 -I S, Reverse Drain Current [A] 1 1 =125 25 1. 1.5 2. 2.5 3. 3.5..5 -, Gate-Source Voltage [V] Fig.5 Transfer Characteristics 1..6.8 1. 1.2 1. -V SD, Source-Drain voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature October 28. Version 1. 3
-, Gate-Source Voltage [V] 1 8 6 2 Note : I = -6A D V DS = -28V 8 12 16 2 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics Capacitance [F] 1.2n 1.n 8.p 6.p.p 2.p C rss C oss C iss. 1 2 3 -V DS, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Fig.8 Capacitance Characteristics Notes ; 1. = V 2. f = 1 MHz -I D 1 3 1 2 1 1 1 Operation in This Area is Limited by R DS(on) 1 µs 1 ms 1 ms 1 ms DC -I D 28 2 2 16 12 8 1-1 Single Pulse R thjc =3. /W T C =25 1-2 1-1 1 1 1 1 2 -V DS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area 25 5 75 1 125 15 T C, Case Temperature [ ] Fig.1 Maximum Drain Current vs. Case Temperature 1 D=.5 Z θ JC (t), Thermal Response 1-1.2.1.5.2 single pulse.1 Notes : Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =3. /W 1-2 1-1 -3 1-2 1-1 1 1 1 t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve October 28. Version 1.
Physical Dimensions 2 Leads, DPAK (TO252) Dimensions are in millimeters unless otherwise specified October 28. Version 1. 5
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