Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module> PS21865 Transfer-Mold Type Insulated Type

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Pre DS.Kou,M.Sakai,F.Tametani Rev D D S.Kou,T.Iwagami,F.Tametani Apr DM.Fukunaga 02-8/9 M.Fukunaga 03-8/6 Applications : AC100V 200V three-phase inverter drive for small power motor control. Integrated Power Functions : 600V/20A low-loss 5 th generation IGBT inverter bridge for 3 phase DC-to-AC power conversion Integrated drive, protection and system control functions : r upper-leg IGBTs : Drive circuit, High voltage isolated high-speed level shifting, Control supply under-voltage (UV) protection. r lower-leg IGBTs : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC). (Fig.3) Fault signaling : Corresponding to an SC fault (Lower-side IGBT) or a UV fault (Lower-side supply). Input interface : 5V line CMOS/TTL compatible.(high Active) UL Approved : Yellow Card No. E80276 Fig. 1 Package Outlines (1 ^8)

Maximum Ratings (Tj=25 C, unless otherwise noted) : Inverter Part : Item Symbol Condition Rating Unit Supply voltage V CC Applied between P-N 450 V Supply voltage (surge) V CC(surge) Applied between P-N 500 V Collector-emitter voltage V CES 600 V Each IGBT collector current }I C Tf=25 C 20 A Each IGBT collector current (peak) }I CP Tf=25 C, less than 1ms 40 A Collector dissipation P C Tf=25 C, per 1 chip 52.6 W Junction temperature T (Note 1) -20 `+125 C (Note1) The maximum junction temperature rating of the power chips integrated within the is 150 C(@Tf 100 C) however, to insure safe operation of the, the average junction temperature should be limited to Tj(ave) 125 C (@Tf 100 C). Control (Protection) Part : Item Symbol Condition Rating Unit Control supply voltage V D Applied between V P1 -V PC,V N1 -V NC 20 V Applied between V Control supply voltage V UFB -V UFS, DB V VFB -V VFS,V WFB -V WFS 20 V Applied between U Input voltage V P,V P,W P -V PC, U N,V N,W N -V NC -0.5 `V D +0.5 V Fault output supply voltage V FO Applied between -V NC -0.5 `V D +0.5 V Fault output current I FO Sink current at terminal 1 ma Current sensing input voltage V SC Applied between C-V NC -0.5 `V D +0.5 V Total System : Item Symbol Condition Rating Unit Self protection supply voltage limit (short circuit protection capability) V CC(PROT) V D =13.5~16.5V, Inverter part Tj=125 C, non-repetitive less than 2µs 400 V Module case operation temperature Tf (Note2) -20 `+100 C Storage temperature Tstg -40 `+125 C Isolation voltage Viso 60Hz, Sinusoidal, AC 1 minutes, connecting pins to heat-sink plate 2500 Vrms (Note2) Tf measurement point : Al Board Specification: Dimensions 100 ~100 ~10mm, finishing 12s, warp -50~100µm Control Terminals Groove 18mm Al board 13.5mm P U V W Power Terminals FWDi Chip N IGBT Chip Temp. measurement point (inside the Al board) Temp. measurement point (inside the Al board) Silicon-Grease with a thickness of 100~200µm evenly applied (2 ^8)

Thermal Resistance : Item Symbol Condition Min. Typ. Max. Unit Junction to case thermal R th(j-f)q Inverter IGBT part (per 1/6 module) 1.90 resistance inote3 j R th(j-f)f Inverter FWD part (per 1/6 module) 3.00 C ^W inote3 jgrease with good thermal conductivity should be applied evenly with a thickness of about +100µm `+200µm on the contact surface of and heat-sink. Electrical Characteristics ( Tj=25 C, unless otherwise noted ) : Inverter Part : Item Symbol Condition Min. Typ. Max. Unit Collector-emitter V CE(sat) V D =V DB =15V I C =20A, T =25 C 1.6 2.1 saturation voltage V =5V I C =20A, T =125 C 1.7 2.2 V FWD forward voltage V EC T=25 C, -I C =20A, V =0V 1.5 2.0 V Switching times t on V CC =300V, V D =V DB =15V 0.7 1.3 1.9 t rr I C =20A 0.3 t c(on) T =125 C 0.4 0.6 µs t off Inductive load (upper-lower arm) 1.6 2.2 t c(off) V =0 5V 0.5 0.8 Collector-emitter I CES V CE V CES T=25 C 1 cut-off current T =125 C 10 ma Control (Protection) Part : Item Symbol Condition Min. Typ. Max. Unit Circuit current I D V D =V DB =15V Total of V P1 -V PC,V N1 -V NC 5.00 ma V =5V V UFB -V UFS,V VFB -V VFS,V WFB -V WFS 0.40 ma V D =V DB =15V Total of V P1 -V PC,V N1 -V NC 7.00 ma V =0V V UFB -V UFS,V VFB -V VFS,V WFB -V WFS 0.55 ma output voltage V FOH V SC =0V, circuit pull-up to 5V with 10k 4.9 V V FOL V SC =1V, I FO =1mA 0.95 V Input current I V =5V 1.0 1.5 2.0 ma Short circuit trip level V SC(ref) T=25 C, V D =15V (Note4) 0.43 0.48 0.53 V UV DBt Tj 125 C Trip level 10.0 12.0 V Supply circuit under- UV DBr Reset level 10.5 12.5 V voltage protection UV Dt Trip level 10.3 12.5 V UV Dr Reset level 10.8 13.0 V Fault output pulse width t FO C FO =22nF (Note5) 1.0 1.8 ms ON threshold voltage Vth(on) Applied between U P,V P,W P -V PC, 2.1 2.3 2.6 V OFF threshold voltage Vth(off) U N,V N,W N -V NC 0.8 1.4 2.1 (Note4) Short circuit protection is functioning only at the low-arms. Please select the value of the external shunt resistor such that the SC trip-level is less than 34A (Note5) Fault signal is output when the low-arms short circuit or control supply under-voltage protective functions operate. The fault output pulse-width t FO depends on the capacitance value of C FO according to the following approximate equation : C FO = 12.2 10-6 t FO [F] (3 ^8)

Mechanical Characteristics and Ratings Item Condition Min. Typ. Max. Unit Mounting torque Mounting screw: M4 Recommended: 1.18 N m 0.98 1.47 N m Weight 65 g Heat-sink flatness (Note6) -50 100 µm (Note6) { Measurement point 3mm Heat-sink { Heat-sink Recommended Operation Conditions Item Symbol Condition Recommended Unit Min. Typ. Max. Supply voltage V CC Applied between P-N 0 300 400 V Control supply voltage V D Applied between V P1 -V PC,V N1 -V NC 13.5 15.0 16.5 V Applied between Control supply voltage V DB V UFB -V UFS,V VFB -V VFS,V WFB -V WFS 13.0 15.0 18.5 V Control supply variation V D, V DB -1 1 V/µs Arm-shoot-through blocking time t dead r each input signal, Tf 100 C 2 µs PWM input frequency f PWM Tf 100 C, Tj 125 C 20 khz Allowable r.m.s. current Minimum input pulse width V CC =300V, V D =V DB =15V, f PWM =5kHz 14 I O P.F=0.8, sinusoidal PWM, Tj 125 C, Tf 100 C f PWM =15kHz 9.5 (Note7) PW(on) (Note8) 0.3 PW(off) 200 V CC 350V, 13.5 V D 16.5V, 13.0 V DB 18.5V, -20 Tf 100, N-line wiring inductance less than 10nH inote 9 j Below rated current Between rated current and 1.7 times of rated current 1.4 2.5 V NC variation V NC between V NC -N (including surge) -5.0 5.0 V (Note 7) The Allowable r.m.s. current value depends on the actual application conditons. (Note 8) Input signal with ON pulse width less than PW(on) might make no response. (Note 9) IPM might not work properly or make response for the Input signal with OFF pulse width less than PW(off). Please refer to Fig. 5 for recommended wiring method. Arms µs (4 ^8)

Fig.2 The Internal Circuit : V UFB V UFS V P1 V CC HVIC1 V B IGBT1 Di1 P U P HO COM V S U V VFB V VFS V P1 V CC HVIC2 V B IGBT2 Di2 V P HO COM V S V V WFB V WFS HVIC3 V P1 V CC V B IGBT3 Di3 W P HO V PC COM V S W LVIC U OUT IGBT4 Di4 VN1 V CC IGBT5 Di5 V OUT U N U N IGBT6 Di6 V N V N W OUT W N W N V NC GND V NO C CFO N CFO C (5 ^8)

Fig.3 Timing Charts of the Protective Functions [A] Short-Circuit Protection ( Lower-arms only ) (with external shunt resistor and CR connection) a1. Normal operation : IGBT ON and carrying current. a2. Short circuit current detection (SC trigger). a3. Hard IGBT gate interrupt. a4. IGBT turns OFF. a5. timer operation starts : The pulse width of the signal is set by the external capacitor C FO. a6. Input L : IGBT OFF state. a7. Input H : IGBT ON state, but during the signal active period the IGBT doesn t turn ON. a8. IGBT OFF state. Lower-arms control input a6 a7 Protection circuit state SET Internal IGBT gate a3 Output current Ic a1 a2 SC a4 a8 Sense voltage of the shunt resistance SC reference voltage CR circuit time constant DELAY (*Note) Error output a5 [B] Under- Voltage Protection ( Lower-arm, UV D ) b1. Control supply voltage rises : After the voltage reaches UV Dr level, the circuits start to operate when the next input is applied. b2. Normal operation : IGBT ON and carrying current. b3. Under voltage trip (UV Dt ). b4. IGBT OFF in spite of control input condition. b5. operation starts. b6. Under voltage reset (UV Dr ). b7. Normal operation : IGBT ON and carrying current. Control input Protection circuit state SET Control supply voltage V D UV Dr b1 UV Dt b3 b6 Output current Ic b2 b4 b7 Error output b5 (6 ^8)

[C] Under- Voltage Protection ( Upper-arm, UV DB ) c1. Control supply voltage rises : After the voltage reaches UV DBr level, the circuits start to operate when the next input is applied. c2. Normal operation : IGBT ON and carrying current. c3. Under voltage trip (UV DBt ). c4. IGBT OFF in spite of control input condition, but there is no signal output. c5. Under voltage reset (UV DBr ). c6. Normal operation : IGBT ON and carrying current. Control input Protection circuit state SET Control supply voltage V DB UV DBr c1 UV DBt c3 c5 Output current Ic c2 c4 c6 Error output High-level (no fault output) Fig.4 Recommended CPU I/O interface circuit : 5V line 10k U P,V P,W P,V N,V N,W N CPU 2.5k (min) V NC(Logic) Note) RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application s printed circuit board. The input signal section integrates a 2.5k (min) pull-down resistor. Therefore, when using an external filtering resistor, care must be taken to satisfy the turn-on threshold voltage requirement. Fig.5 Recommended wiring of shunt resistance : Wiring inductance should be less than 10nH. width=3mm, thickness=100 m, length=17mm in copper pattern (rough standard) Shunt resistor V NC N Please make the connection point as close as possible to the terminal of shunt resistor (7 ^8)

Fig.6 Example of Typical Application Circuit : C3 C2 C1 C2 C1:Tight tolerance temp-compensated electrolytic type C2,C3: 0.1 0.22µF R-category ceramic capacitor for noise filtering. (Note: The capacitance value depends on the PWM control used in the applied system.) VUFB VUFS VP1 UP VVFB VCC COM HVIC1 VB HO VS P U C3 C1 C2 VVFS VP1 VP HVIC2 VCC VB HO COM VS V M VWFB C P U U N I T C3 C1 VWFS VP1 WP VPC HVIC3 VCC VB HO COM VS LVIC W UOUT VN1 5V line C3 VCC VOUT UN UN VN VN WN WN WOUT VNO C If this wiring is too long, short circuit might be caused. N VNC GND CFO CFO C C 15V line The long wiring of GND might generate noise on input and cause IGBT to be malfunction. C4(CFO) A C5 B R1 Shunt Resistance If this wiring is too long, the SC level fluctuation might be larger and cause SC malfunction. Note1) To prevent the input signals oscillation, the wiring of each input should be as short as possible. (Less than 2cm) Note2) By virtue of integrating an application specific type HVIC inside the module, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible. Note3) output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with an approximately 10k resistor. Note4) output pulse width is determined by the external capacitor between CFO and V NC terminals (C FO ). (Example FC FO = 22 nf t FO = 1.8 ms (typ.)) Note5) The logic of input signal is high-active. The input signal section integrates a 2.5k (min) pull-down resistor. Therefore, when using an external filtering resistor, care must be taken to satisfy the turn-on threshold voltage requirement. Note6) To prevent errors of the protection function, the wiring of A, B, C should be as short as possible. Note7) Please set the R1C5 time constant in the range 1.5 2µs. Note8) Each capacitor should be put as close the pins of the as possible. Note9) To prevent surge destruction, the wiring between the smoothing capacitor and the P&N1 pins should be as short as possible. Approximately a 0.1 0.22µF snubber capacitor between the P&N1 pins is recommended. N1 (8 ^8)