HMC457QS16G / 457QS16GE

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Transcription:

v3.97 HMC47QS16G / 47QS16GE Typical Applications The HMC47QS16G / HMC47QS16GE is ideal for applications requiring a high dynamic range amplifi er: CDMA & W-CDMA GSM, GPRS & Edge Base Stations & Repeaters Functional Diagram Features Output IP3: +46 dbm Gain: 27 db @ 19 MHz 48% PAE @ +32 dbm Pout +2 dbm W-CDMA Channel Power @ - dbc ACPR Integrated Power Control (Vpd) QSOP16G SMT Package: 29.4 mm 2 Included in the HMC-DK2 Designer s Kit General Description The HMC47QS16G & HMC47QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifi ers operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifi er gain is typically 27 db from 1.7 to 2. GHz and 2 db from 2. to 2.2 GHz. Utilizing a minimum number of external components, the amplifi er output IP3 can be optimized to +4 dbm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC47QS16G & HMC47QS16GE ideal power amplifi ers for Cellular/3G base station & repeater applications. Electrical Specifications, T A = +2 C, Vs= +V, Vpd = +V, Vbias = +V [1] Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 17-199 - 217 MHz Gain 27 2 db Gain Variation Over Temperature.2.3.2.3 db / C Input Return Loss db Output Return Loss 8 db Output Power for 1dB Compression (P1dB) 29 27.. dbm Saturated Output Power (Psat) 32. 32 dbm Output Third Order Intercept (IP3) [2] 42 4 42 4 dbm Noise Figure 6 db Supply Current (Icq) ma Control Current (Ipd) 4 4 ma Bias Current (Vbias) ma [1] Specifi cations and data refl ect HMC47QS16G measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. [2] Two-tone output power of +1 dbm per tone, 1 MHz spacing. - Alpha Road, Chelmsford, MA 18 Phone: 978-2-33 Fax: 978-2-3373

HMC47QS16G / 47QS16GE v3.97 Broadband Gain & Return Loss @ 19 MHz 2 Gain vs. Temperature @ 19 MHz RESPONSE (db) 1 - S21 S S GAIN (db) 18 16 +2C +8C -4C - 14-1 12-1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 Input Return Loss vs. Temperature @ 19 MHz RETURN LOSS (db) -2-4 -6-8 - -12-14 -16-18 +2C +8C -4C - 1.6 1.6 1.7 1.7 1.8 1.8 1.9 1.9 2 2. 2.1 PldB vs. Temperature @ 19 MHz 32 1.6 1.6 1.7 1.7 1.8 1.8 1.9 1.9 2 2. 2.1 Output Return Loss vs. Temperature @ 19 MHz RETURN LOSS (db) -3-6 -9-12 +2C +8C -4C -1 1.6 1.6 1.7 1.7 1.8 1.8 1.9 1.9 2 2. 2.1 Psat vs. Temperature @ 19 MHz 32 P1dB (dbm) +2 C +8 C -4 C Psat (dbm) +2 C +8 C -4 C 1.6 1.6 1.7 1.7 1.8 1.8 1.9 1.9 2 2. 2.1 1.6 1.6 1.7 1.7 1.8 1.8 1.9 1.9 2 2. 2.1 Alpha Road, Chelmsford, MA 18 Phone: 978-2-33 Fax: 978-2-3373-1

HMC47QS16G / 47QS16GE v3.97 Output IP3 vs. Temperature @ 19 MHz Noise Figure vs. Temperature @ 19 MHz 48 9 OIP3 (dbm) 46 44 42 4 38 36 +2 C +8 C -4 C NOISE FIGURE (db) 8 7 6 4 3 2 1 +2 C +8 C -4 C 1.6 1.6 1.7 1.7 1.8 1.8 1.9 1.9 2 2. 2.1 Gain, Power & IP3 vs. Supply Voltage @ 19 MHz GAIN (db), P1dB (dbm), Psat (dbm), OIP3 (dbm) 4 4 3 2 1 Gain P1dB Psat OIP3 4. 4.7.2. Vs (Vdc) Power Compression @ 19 MHz Pout (dbm), GAIN (db), PAE (%) 4 4 3 2 1 Pout (dbm) Gain (db) PAE (%) - -8-6 -4-2 2 4 6 8 12 INPUT POWER (dbm) 1.6 1.7 1.8 1.9 2 2.1 Gain, Power & IP3 vs. Supply Current @ 19 MHz* GAIN (db), P1dB (dbm), Psat (dbm), OIP3 (dbm) 4 4 3 2 1 Gain P1dB Psat OIP3 44 48 6 6 Icq (ma) ACPR vs. Supply Voltage @ 196 MHz CDMA, 9 Channels Forward ACPR (dbc) - -4 - -6-7 -8 CDMA Frequency: 1.96 GHz Integration BW: 1.8 MHz Forward Link, SR1, 9 Channels 4.V.V Source ACPR -9 12 14 16 18 Channel Power (dbm) V * Icq is controlled by varying Vpd. - 2 Alpha Road, Chelmsford, MA 18 Phone: 978-2-33 Fax: 978-2-3373

HMC47QS16G / 47QS16GE v3.97 Broadband Gain and Return Loss @ 2 MHz Gain vs. Temperature @ 2 MHz 2 RESPONSE (db) 1 - - S S21 S GAIN (db) 18 +2C +8C -4C -1 16-1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 Input Return Loss vs. Temperature @ 2 MHz RETURN LOSS (db) -2-4 -6-8 - -12-14 -16-18 +2C +8C -4C - 1.9 1.9 2 2. 2.1 2.1 2.2 2.2 2.3 PldB vs. Temperature @ 2 MHz 32 14 1.9 1.9 2 2. 2.1 2.1 2.2 2.2 2.3 Output Return Loss vs. Temperature @ 2 MHz RETURN LOSS (db) -2-4 -6-8 +2C +8C -4C - 1.9 1.9 2 2. 2.1 2.1 2.2 2.2 2.3 Psat vs. Temperature @ 2 MHz 32 P1dB (dbm) +2 C +8 C -4 C Psat (dbm) +2 C +8 C -4 C 1.9 1.9 2 2. 2.1 2.1 2.2 2.2 2.3 1.9 1.9 2 2. 2.1 2.1 2.2 2.2 2.3 Alpha Road, Chelmsford, MA 18 Phone: 978-2-33 Fax: 978-2-3373-3

HMC47QS16G / 47QS16GE v3.97 Output IP3 vs. Temperature @ 2 MHz Noise Figure vs. Temperature @ 2 MHz 48 9 OIP3 (dbm) 46 44 42 4 38 36 +2 C +8 C -4 C NOISE FIGURE (db) 8 7 6 4 3 2 1 +2 C +8 C -4 C Gain, Power & IP3 vs. Supply Voltage @ 2 MHz GAIN (db), P1dB (dbm), Psat (dbm), OIP3 (dbm) 4 4 3 2 1 Gain P1dB Psat OIP3 4. 4.7.2. Vs (Vdc) Power Compression @ 2 MHz Pout (dbm), GAIN (db), PAE (%) 1.9 1.9 2 2. 2.1 2.1 2.2 2.2 2.3 4 4 3 2 1 Pout (dbm) Gain (db) PAE (%) - -8-6 -4-2 2 4 6 8 12 INPUT POWER (dbm) 1.9 2 2.1 2.2 2.3 Gain, Power & IP3 vs. Supply Current @ 2 MHz* GAIN (db), P1dB (dbm), Psat (dbm), OIP3 (dbm) 4 4 3 2 1 Gain P1dB Psat OIP3 44 48 6 6 Icq (ma) ACPR vs. Supply Voltage @ 214 MHz W-CDMA, 64 DPCH (Uplink) ACPR (dbc) - -3-4 -4 - - -6-6 W-CDMA Frequency: 2.14 GHz Integration BW: 3.84 MHz 64 DPCH 4.V -7 Source ACPR -7 12 14 16 18 Channel Power (dbm) V.V *Icq is controlled by varying Vpd - 4 Alpha Road, Chelmsford, MA 18 Phone: 978-2-33 Fax: 978-2-3373

HMC47QS16G / 47QS16GE v3.97 Power Dissipation Absolute Maximum Ratings POWER DISSIPATION (W) 3 Max Pdiss @ +8C 2.8 2.6 2.4 19 MHz 2.2 2 1.8 2 MHz 1.6 1.4 1.2 1 - -8-6 -4-2 2 4 6 8 INPUT POWER (dbm) Typical Supply Current vs. Supply Voltage Vs (V) Icq (ma) 4. 4.. 6 Collector Bias Voltage (Vcc) +6 Vdc Control Voltage (Vpd) +.4 Vdc RF Input Power (RFIN)(Vs = Vpd = + Vdc) +1 dbm Junction Temperature 1 C Continuous Pdiss (T = 8 C) (derate 42.9 mw/ C above 8 C) 2.78 W Thermal Resistance (junction to ground paddle) 23.3 C/W Storage Temperature -6 to +1 C Operating Temperature -4 to +8 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Alpha Road, Chelmsford, MA 18 Phone: 978-2-33 Fax: 978-2-3373 -

v3.97 HMC47QS16G / 47QS16GE Outline Drawing Package Information NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF.1mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF.2mm PER SIDE.. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] [1] H47 HMC47QS16G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 XXXX [2] H47 HMC47QS16GE RoHS-compliant Low Stress Injection Molded Plastic % matte Sn MSL1 XXXX [1] Max peak refl ow temperature of 23 C [2] Max peak refl ow temperature of C [3] 4-Digit lot number XXXX - 6 Alpha Road, Chelmsford, MA 18 Phone: 978-2-33 Fax: 978-2-3373

v3.97 HMC47QS16G / 47QS16GE Pin Descriptions Pin Number Function Description Interface Schematic 1 Vcc 2, 4,, 7, 9, 16 GND Power supply voltage for the fi rst amplifier stage. External bypass capacitors are required as shown in the application schematic. Ground: Backside of package has exposed metal ground slug that must also be connected to RF/DC ground. Vias under the device are required. 3 Vbias Power Supply for Bias Circuit 6 RFIN 8 Vpd This pin is AC coupled and matched to Ohms Power control pin. For maximum power, this pin should be connected to +V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. - 1 RFOUT RF output and DC bias for the output stage. Alpha Road, Chelmsford, MA 18 Phone: 978-2-33 Fax: 978-2-3373-7

v3.97 HMC47QS16G / 47QS16GE 19 & 2 MHz Application Circuit This circuit was used to specify the performance for 19 & 2 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. TL1 TL2 Impedance Ohm Ohm Physical Length.17.8 Electrical Length 9 PCB Material: mil Rogers 43, Er = 3.48 Recommended Component Values 19 MHz 2 MHz C1 - C4 pf pf C, C6 pf pf C7 2.2 μf 2.2 μf C8 33 pf 33 pf C9 3.9 pf 2.7 pf L1, L2 3.9 nh 3.9 nh R1 16 Ohm 16 Ohm - 8 Alpha Road, Chelmsford, MA 18 Phone: 978-2-33 Fax: 978-2-3373

v3.97 HMC47QS16G / 47QS16GE Evaluation PCB List of Materials for Evaluation PCB 643-19, 71-2 [1] Item Description J1, J2 PCB Mount SMA Connector J3, J4 2 mm DC Header C1 - C4 pf Capacitor, 42 Pkg. C, C6 pf Capacitor, 63 Pkg. C7 2.2 μf Capacitor, Tantalum C8 33 pf Capacitor, 42 Pkg. C9 3.9 pf Capacitor, 63 Pkg. - 19 MHz C9 2.7 pf Capacitor, 63 Pkg. - 2 MHz L1, L2 3.9 nh Inductor, 63 Pkg. R1 16 Ohm Resistor, 63 Pkg. U1 HMC47QS16G / HMC47QS16GE PCB [2] 98 Evaluation PCB, mils [1] Reference one of these numbers when ordering complete evaluation PCB depending on frequency of operation. [2] Circuit Board Material: Rogers 43, Er = 3.48 The circuit board used in this application should use RF circuit design techniques. Signal lines should have ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. Alpha Road, Chelmsford, MA 18 Phone: 978-2-33 Fax: 978-2-3373-9