Discrete IGBT datasheet understanding. Zhou Wei( 周伟 ) System application engineer Infineon Technologies China

Discrete IGBT datasheet understanding Zhou Wei( 周伟 ) System application engineer Infineon Technologies China wei.zhou@infineon.com

Discrete IGBT datasheet understanding Product Infineon Qualifications IGBT Chip Technology & Team Structure Product Datasheet Qualifications understanding & Team Structure Electrical characteristic Switching characteristic Thermal features 21.10.2011 Page 2

Behaviour: IGBT vs MOSFET I C I D I C V CE I D U DS pn threshold voltage V CEs V DS at current tail t The IGBT is characterized by it s pn threshold voltage. Conduction loss are in linear relation to I C The MOSFET behaves like a resistor. Conduction loss are proportional to I D ² The IGBT has a characteristic current tail. Turn off losses are dominated by the tail current. IGBT is basically the preferred device for higher currents at limited pulse frequencies. 2011/10/21 Page 3

Infineon s IGBT history for Drives Product Technologies 21.10.2011 Page 4

Vertical IGBT Concepts Punch Through Non Punch Through Trench + Field-Stop (ROW: 1988) (IFX: 1990 ROW: 1997) (IFX: 2000) Emitter Gate Emitter Gate Emitter Gate -E -E -E n - basis (epi) n + buffer (epi) p + emitter (substrate) n - basis (substrate) n - basis (substrate) Collector Collector Collector Advantage Implanted Back-Emitter better adjustable Performance Lower Schwitching Losses Higher Switching Robustness Advantage Implanted Back-Emitter Implanted Fieldstop enables thinner base region Performance Lower VCEsat Lower Switching Losses Robustness like NPT 21.10.2011 Page 5

Standard planar IGBT are still good, but they have Emitter Gate high conduction losses, due to high V CE(sat) n + p + n - (substrate) low switching performance, due to low switching speed poor thermal properties, due to thick wafers Collector p + 21.10.2011 New Technologies Copyright are Infineon necessary Technologies 2008. to All meet rights reserved. tomorrows requirements Page 6

How to improve the standard IGBTtechnology? Emitter Gate n + p + Improvement of thin wafer technology (Fieldstop) reduces V CE(sat) dramatically Reduction of Conduction Losses for higher Efficiency and improved thermal properties Reduction of Swtiching Losses for higher Efficiency n - (substrate) Introduction of trench gate technology reduces V CE(sat) further Reduction of Conduction Losses for higher Efficiency n ( (fieldstop) ) Collector p + Well established thinwafer technology lowers VCE(sat) & Eoff furthermore Introduction of RC Diode technology 21.10.2011 Infineon s TrenchStop -Technology meets today tomorrow s requirements Page 7

Current parameters (IKW50N60T) Nominal current (Ic) Ic is calculated as below: Tc = T jmax C - Vcesat max @ T jmax C * Ic * Rthjc IKW50N60T Tj=175 C Vcesat=2.4V Ic=50A Rthjc=0.45 C/W IKW50N60T Tc=121 C Tc> 100 C Tc set to 100 C All nominal current is specified at 100 /110,25 value is also given as reference. This value just represents IGBT DC behavior, can be a reference of choosing IGBT, but not yardstick. 2011/10/21 Page 9

Current Limitation (IKW50N60T) Calculation of Max. DC Current Tjc = Ptot Rthjc P tot = I C V CE V CE = V TO I C R CE I C = R thjc V 2 TO 2 thjc 4RCE Tj max R R CE -T c - VTO 2 R CE Page 10

Current Limitation IHW20N120R3 in TO-247 Value limited by bondwire IKW50N60T in TO-247 Page 11

Pulse collector current (IKW50N60T) Pulse current (Icpuls) Icpuls is defined as repetitive turn on & maximum turn off pulse current 3 ~ 4 times of Ic,according to different technology 2011/10/21 Page 12

V CES Breakdown Voltage (IKW50N60T) V CES VCES-test condition Max. collector-emitter voltage under condition of gate and emitter shorted, where leakage current is within spec. Vces under Tj=25, proportional to its junction temperature Vces can not be violated at any condition, otherwise IGBT would break down. Page 13

V CES Breakdown Voltage (IKW50N60T) IKW50N60T Max. VCES can be shunt donw Due to the stray inductance ΔV= L σ * di/dt In real application, turn-off voltage need to be smaller than max. VCES Page 14

Voltage parameters (IKW50N60T) Vcesat Vcesat is specified at nominal current Positive coefficient Good for paralleling 2011/10/21 Page 15

Voltage parameters (IKW50N60T) Vcesat increase with Ic increasing Vcesat increase with Vge decreasing Vge is not recommended to use too small: conduction losses 2011/10/21 Page 16

VGEth (IKW50N60T) Threshold of IGBT turn on: Pay attention to negative temperature coefficient of VGEth. 2011/10/21 Page 17

Max operation junction temperature (IKW50N60T) Tjmax is the max temperature for IGBT to sustain all electrical parameters within spec. Never exceed Tjmax at any condition! Otherwise, IGBT will run away fail! 2011/10/21 Page 18

Short circuit current (IKW25N120T2) Different value for various start junction condition. 2011/10/21 Page 20

Short circuit current & time (IKW25N120T2) 10us guaranteed at test condition. 2011/10/21 Page 21

Current parameters (IKW25N120T2) Short circuit condition: Vge: gate voltage (15V) Vcc: DC bus voltage Tvj: short circuit start temperature Vge Isc tsc 2011/10/21 Infineon test short circuit at maximum operation Tj Page 22

Switching parameters (IKW50N60T) Qgate This value is specified at +15V, used to calculate driving power Ciss, Crss, Coss C iss = C GE + C GC : Input capacitance (output shorted) C oss = C GC + C EC : Output capacitance (input shorted) C rss = C GC : Reverse transfer capacitance (Miller capacitance) C GC C P = Q g V GE f G C GE C EC E 2011/10/21 Page 23

Thermal Features IGBT-thermal model Rthjc Rthch Input Power Power Loss Chip Solder Copper Baseplate Thermal Grease Output Power Tj Tc Chip Case Tjc Case Heatsink Tch Heatsink Th Rthha Ta Heatsink Ambient Tha Rth(j-a) = Rth(j-c) + Rth(c-s) + Rth(s-a) Tj = Tjc + Tch + Tha + Ta Page 25

IGBT Thermal Resistance (IKW50N60T) R th JC ; R th CH Page 26

IGBT Power Dissipation & Junction Temp. (IKW50N60T) Ptot-total power dissipation Tjmax = Tc+Ptot*Rthjc (max) Ptot =(Tjmax- Tc)/Rthjc (max) Rated at 25 Page 27