TCET, TCETG Optocoupler, Phototransistor Output, 797_4 DESCRIPTION The TCET. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. AGENCY APPROVALS UL577, file no. E52744, double protection cul tested, file A52744 BSI: EN 665:22, EN 695:2 DIN EN 6747-5-5 (VDE 884) FIMKO C 797_5 C 4 A E 3 2 C V D E FEATURES High common mode rejection Low temperature coefficient of CTR CTR offered in 9 groups Reinforced isolation provides circuit protection against electrical shock (safety class II) Isolation materials according to UL 94 V-O Pollution degree 2 (DIN/VDE /resp. IEC 6664) Climatic classification 55//2 (IEC 668 part ) Rated impulse voltage (transient overvoltage) V IOTM = 6 kv peak Isolation test voltage (partial discharge test voltage) V pd =.6 kv Rated isolation voltage (RMS includes DC) V IOWM = 6 V RMS Rated recurring peak voltage (repetitive) V IORM = 848 V peak Creepage current resistance according to VDE 33/ IEC 62 comparative tracking index: CTI 75 Compliant to RoHS directive 22/95/EC and in accordance to WEEE 22/96/EC APPLICATIONS Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): for appl. class I - IV at mains voltage 3 V for appl. class I - III at mains voltage 6 V according to DIN EN 6747-5-5 (VDE 884), suitable for: - Switch-mode power supplies - Line receiver - Computer peripheral interface - Microprocessor system interface www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 8353 8 Rev. 2.3, 4-Oct-9
Optocoupler, Phototransistor Output, TCET, TCETG ORDER INFORMATION PART TCET TCET TCET2 TCET3 TCET4 TCET5 TCET6 TCET7 TCET8 TCET9 TCETG TCETG TCET2G TCET3G TCET4G TCET5G TCET6G TCET7G TCET8G TCET9G Note G = lead form.6 mm; G is not marked on the body REMARKS CTR 5 % to 6 %, DIP-4 CTR 4 % to 8 %, DIP-4 CTR 63 % to 25 %, DIP-4 CTR % to 2 %, DIP-4 CTR 6 % to 32 %, DIP-4 CTR 5 % to 5 %, DIP-4 CTR % to 3 %, DIP-4 CTR 8 % to 6 %, DIP-4 CTR 3 % to 26 %, DIP-4 CTR 2 % to 4 %, DIP-4 CTR 5 % to 6 %, DIP-4, 4 mil CTR 4 % to 8 %, DIP-4, 4 mil CTR 63 % to 25 %, DIP-4, 4 mil CTR % to 2 %, DIP-4, 4 mil CTR 6 % to 32 %, DIP-4, 4 mil CTR 5 % to 5 %, DIP-4, 4 mil CTR % to 3 %, DIP-4, 4 mil CTR 8 % to 6 %, DIP-4, 4 mil CTR 3 % to 26 %, DIP-4, 4 mil CTR 2 % to 4 %, DIP-4, 4 mil ABSOLUTE MAXIMUM RATINGS () PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current 6 ma Forward surge current t p µs SM.5 A OUTPUT Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p ms I CM ma COUPLER Isolation test voltage (RMS) t = min V ISO 5 V RMS Operating ambient temperature range T amb - 4 to + C Storage temperature range T stg - 55 to + 25 C Soldering temperature (2) 2 mm from case, s T sld 26 C Notes () T amb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices (DIP). Document Number: 8353 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev. 2.3, 4-Oct-9 8
TCET, TCETG Optocoupler, Phototransistor Output, THERMAL CHARACTERISTICS () PARAMETER SYMBOL VALUE UNIT LED power dissipation P diss mw Output power dissipation P diss 5 mw T A Maximum LED junction temperature T jmax. 25 C θ CA Maximum output die junction temperature T jmax. 25 C T C Package Thermal resistance, junction emitter to board θ EB 73 C/W θ DC θ EC Thermal resistance, junction emitter to case θ EC 49 C/W T JD θ DE T JE Thermal resistance, junction detector to board θ DB C/W θ DB Thermal resistance, junction detector to case θ DC 27 C/W T B θ EB Thermal resistance, junction emitter to junction detector θ ED 73 C/W θ BA Thermal resistance, board to ambient (2) θ BA 97 C/W 9996 Thermal resistance, case to ambient (2) θ CA 44 C/W T A Note () The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependen the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay s Thermal Characteristics of Optocouplers application note. (2) For 2 layer FR4 board (4" x 3" x.62"). ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage = 5 ma V F.25.6 V Junction capacitance V R =, f = MHz C j 5 pf OUTPUT Collector emitter voltage I C = ma V CEO 7 V Emitter collector voltage I E = µa V ECO 7 V Collector emitter cut-off current V CE = 2 V, = A, E = I CEO na COUPLER Collector emitter saturation voltage = ma, I C = ma V CEsat.3 V Cut-off frequency V CE, = ma, R L = Ω f c khz Coupling capacitance f = MHz C k.3 pf Note T amb = 25 C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 8353 82 Rev. 2.3, 4-Oct-9
Optocoupler, Phototransistor Output, TCET, TCETG CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I C / V CE, = ma V CE, = 5 ma V CE, = ma TCET TCETG TCET2 TCET2G TCET3 TCET3G TCET4 TCET4G TCET TCETG TCET5 TCET5G TCET6 TCET6G TCET7 TCET7G TCET8 TCET8G TCET9 TCET9G TCET TCETG TCET2 TCET2G TCET3 TCET3G TCET4 TCET4G CTR 3 3 % CTR 22 45 % CTR 34 7 % CTR 56 9 % CTR 5 6 % CTR 5 5 % CTR 3 % CTR 8 6 % CTR 3 26 % CTR 2 4 % CTR 4 8 % CTR 63 25 % CTR 2 % CTR 6 32 % MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward current 3 ma OUTPUT Power dissipation P diss 265 mw COUPLER Rated impulse voltage V IOTM 6 kv Safety temperature T si 5 C Note According to DIN EN 6747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Partial discharge test voltage - routine test %, t test = s V pd.6 kv Partial discharge test voltage - lot test (sample test) Insulation resistance t Tr = 6 s, t test = s, (see figure 2) V IOTM 6 kv V pd.3 kv V IO R IO 2 Ω V IO, T amb = C R IO Ω V IO, T amb = 5 C (construction tesly) R IO 9 Ω Document Number: 8353 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev. 2.3, 4-Oct-9 83
TCET, TCETG Optocoupler, Phototransistor Output, P tot - Total Power Dissipation (mw) 94 982 3 25 2 5 5 IR-diode I si (ma) Phototransistor P si (mw) 25 5 75 25 T si - Safety Temperature ( C) 5 V IOTM 393 V Pd V IOWM V IORM t t, t 2 = to s t 3, t 4 = s t test = s t stres = 2 s t Tr = 6 s t 3 t test t 4 t 2 t stres t Fig. - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 6747-5-5/DIN EN 6747-; IEC 6747 SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time Rise time Turn-on time Storage time Fall time Turn-off time Turn-on time Turn-off time V S, I C = 2 ma, R L = Ω, V S, I C = 2 ma, R L = Ω, V S, I C = 2 ma, R L = Ω, V S, I C = 2 ma, R L = Ω, V S, I C = 2 ma, R L = Ω, V S, I C = 2 ma, R L = Ω, V S, = ma, R L = kω, (see figure 4) V S, = ma, R L = kω, (see figure 4) t d 3 µs t r 3 µs 6 µs t s.3 µs t f 4.7 µs t off 5 µs 9 µs t off µs + 5 V IC = 2 ma; adjusted through input amplitude = ma + 5 V I C R G = 5 Ω t p T =. t p = 5 µs 5 Ω Ω Channel I Channel II Oscilloscope R L = MΩ C L = 2 pf R G = 5 Ω t p T =. t p = 5 µs 5 Ω kω Channel I Channel II Oscilloscope R L MΩ C L 2 pf 95 84 95 843 Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 4 - Test Circuit, Saturated Operation www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 8353 84 Rev. 2.3, 4-Oct-9
Optocoupler, Phototransistor Output, TCET, TCETG I C t p t % 9 % % t r t d t s t f t t off t p t d t r (= t d + t r ) Pulse duration Delay time Rise time Turn-on time t s t f t off (= t s + t f ) Storage time Fall time Turn-off time 96 698 Fig. 5 - Switching Times TYPICAL CHARACTERISTICS T amb = 25 C, unless otherwise specified P tot - Total Power Dissipation (mw) 3 Coupled device 25 2 Phototransistor 5 IR-diode 5 4 8 2 96 7 T amb - Ambient Temperature ( C) Fig. 6 - Total Power Dissipation vs. Ambient Temperature CTR rel - Relative Current Transfer Ratio 2..5..5 95 25-25 25 5 V CE = 5 ma T amb - Ambient Temperature ( C) Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature 75 - Forward Current (ma) 96 862..4.8.2.6 2. V F - Forward Voltage (V) I CEO - Collector Dark Current, with Open Base (na) V CE = 2 V = 25 5 75 95 26 T amb - Ambient Temperature ( C) Fig. 7 - Forward Current vs. Forward Voltage Fig. 9 - Collector Dark Current vs. Ambient Temperature Document Number: 8353 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev. 2.3, 4-Oct-9 85
TCET, TCETG Optocoupler, Phototransistor Output, I C - Collector Current (ma). V CE.. 95 27 - Forward Current (ma) CTR - Current Transfer Ratio (%) V CE. 95 29 - Forward Current (ma) Fig. - Collector Current vs. Forward Current Fig. 3 - Current Transfer Ratio vs. Forward Current I C - Collector Current (ma) = 5 ma 2 ma ma 5 ma 2 ma ma.. 95 985 V CE - Collector Emitter Voltage (V) /t off - Turn-on /Turn-off Time (µs) 8 6 4 2 t off Non-saturated operation V S R L = Ω 2 4 6 95 3 I C - Collector Current (ma) 8 Fig. - Collector Current vs. Collector Emitter Voltage Fig. 4 - Turn-on/off Time vs. Collector Current V CEsat - Collector Emitter Saturation Voltage (V)..8.6.4.2 CTR = 5 % used 2 % used % used 95 28 I C - Collector Current (ma) /t off - Turn-on/Turn-off Time (µs) 5 4 3 2 Saturated operation V S R L = kω 5 5 95 3 - Forward Current (ma) t off 2 Fig. 2 - Collector Emitter Saturation Voltage vs. Collector Current Fig. 5 - Turn-on/off Time vs. Forward Current www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 8353 86 Rev. 2.3, 4-Oct-9
PACKAGE DIMENSIONS in millimeters Optocoupler, Phototransistor Output, TCET, TCETG 6.5 ±.3 Pin identifier 4.58 ±.3 7.62 to 9.5.4 ±. 7.62 typ. 3.5 ±. 4.5 ±.3.3 ±. to 5 2.8 ±.5 i7827-4.5 ±. 2.54 typ..25 typ. TCETG type 7.62 typ. 4.5 ±.3 2.55 ±.25 282-3.6 typ. PACKAGE MARKING ET 2764-3 V YWW 24 Document Number: 8353 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev. 2.3, 4-Oct-9 87
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