900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device TMA2N90H TMD2N90H TMP2N90H TMU2N90H Package TO-220F TO-252 TO-220 TO-251 Marking A2N90H D2N90H P2N90H U2N90H Absolute Maximum Ratings T C = 25ºC, unless otherwise noted Parameter Symbol Value TO-220F TO-252 TO-220 TO-251 Unit Drain-Source Voltage (V GS = 0V) V DSS 900 V Continuous Drain Current I D 2 A Pulsed Drain Current (note1) I DM 8 A Gate-Source Voltage V GSS ±30 V Single Pulse Avalanche Energy (note2) E AS 108 mj Avalanche Current (note1) I AR 2 A Repetitive Avalanche Energy (note1) E AR 7.1 mj Power Dissipation (TC = 25ºC) PD 39 107 W Reverse diode dv/dt, V DS = 0 480V, I SD I D dv/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 ºC Thermal Resistance Parameter Symbol Value TO-220F TO-252 TO-220 TO-251 Unit Thermal Resistance, Junction-to-Case R thjc 3.2 1.17 Thermal Resistance, Junction-to-Ambient R thja 62.5 62.5 ºC/W V1.0 1
Specifications T J = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Static Value Min. Typ. Max. Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, I D = 250µA 900 -- -- V Zero Gate Voltage Drain Current I DSS V DS = 900V, V GS = 0V, T J = 25ºC -- -- 1 μa Gate-Source Leakage I GSS V GS = ±30V -- -- ±100 na Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 250µA 3.0 -- 4.0 V Drain-Source On-Resistance (Note3) R DS(on) V GS = 10V, I D = 1A -- 5 6 Ω Forward Transconductance (Note3) g fs V DS = 10V, I D = 1A -- 3 -- S Dynamic Input Capacitance C iss -- 488 -- V GS = 0V, Output Capacitance C oss V DS = 25V, f = 1.0MHz -- 62 -- Reverse Transfer Capacitance C rss -- 12 -- Total Gate Charge Q g -- 20 -- Gate-Source Charge Q gs V DD = 720V, I D = 2A, V GS = 10V -- 2.2 -- Gate-Drain Charge Q gd -- 11 -- pf nc Turn-on Delay Time t d(on) -- 31 -- Turn-on Rise Time t r V DD = 400V, I D = 2A, -- 61 -- Turn-off Delay Time t d(off) R G = 25Ω -- 80 -- ns Turn-off Fall Time t f -- 44 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current I S -- -- 2 T C = 25 ºC Pulsed Diode Forward Current I SM -- -- 8 A Body Diode Voltage V SD T J = 25ºC, I SD = 2A, V GS = 0V -- -- 1.4 V Reverse Recovery Time t rr -- 629 -- ns Reverse Recovery Charge Q rr V R = 400V, I F = I S, di F /dt =100A /μs -- 2.2 -- μc Reverse Recovery Charge Q rr -- 7 -- μc Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I AS = 2A, V DD = 50V, R G = 25 Ω, Starting T J = 25 ºC 3. Pulse Test: Pulse width 300μs, Duty Cycle 1% V1.0 2
(V) IS, Source Current (A) R DS(on), On-Resistance (Ω) I D, Drain Current (A) Capacitance (pf) I D, Drain Current (A) Typical Characteristics T J = 25ºC, unless otherwise noted TMA2N90H, TMD2N90H, TMP2N90H, TMU2N90H Figure 1. Output Characteristics (T J = 25ºC) Figure 2. Transfer Characteristics 5 2 3.75 2.5 15V 10V 6.5V 6V 5.5V 5V 1.6 1.2 0.8 T J = 25ºC T J = 150ºC 1.25 0.4 0 0 5 5 20 25 30 0 0 2 4 6 8 V DS, Drain-to-Source Voltage (V) V GS, Gate-to-Source Voltage (V) Figure 3. On-Resistance vs. Drain Current Figure 4. Capacitance 10 8 V GS = 10V T J = 25ºC 10 4 10 3 C iss 6 10 2 C oss 4 2 0 0.5 1 1.5 2 2.5 3 3.5 4 I D, Drain Current (A) V GS = 0V f = 1MHz C rss 0 20 40 60 V DS, Drain-to-Source Voltage (V) Figure 5. Gate Charge Figure 6. Body Diode Forward Voltage 12 VGS, Gate-to-Source Voltage 10 8 6 4 2 V DD = 180V V DD = 450V V DD = 720V T J = 150ºC T J = 25ºC 0 0 4 8 12 16 20 Q g, Total Gate Charge (nc) 10-1 0.2 0.4 0.6 0.8 1 1.2 V SD, Source-to-Drain Voltage (V) V1.0 3
V BR(DSS), (Normalized) R DS(on), On-Resistance (Normalized) V GS(th), (Variance)we Typical Characteristics T J = 25ºC, unless otherwise noted TMA2N90H, TMD2N90H, TMP2N90H, TMU2N90H 3.0 Figure 7. On-Resistance vs. Temperature 0.6 Figure 8. Threshold Voltage vs. Junction Temperature 2.5 V GS = 10V I D =1A 0.4 0.2 I D = 250µA 2.0 0.0 1.5-0.2-0.4 1.0-0.6 0.5-0.8-1.0 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature (ºC) -1.2-100 -50 0 50 100 150 200 T J, Junction Temperature (ºC) 1.3 1.2 Figure 9. Breakdown voltage vs. Junction Temperature I D = 250µA 1.1 1 0.9 0.8-30 0 30 60 90 120 150 T J, Junction Temperature (ºC) V1.0 4
I D, Drain Current(A) I D, Drain Current(A) Z thjc, Thermal Impedance (K/W) Z thjc, Thermal Impedance (K/W) Typical Characteristics T J = 25ºC, unless otherwise noted TMA2N90H, TMD2N90H, TMP2N90H, TMU2N90H Figure 9. Transient Thermal Impedance TO-252,TO-220,TO-251 Figure 10. Transient Thermal Impedance TO-220F 10-1 10-2 10-3 10-5 10-4 10-3 10-2 10-1 T p, Pulse Width (s) D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 10-3 10-5 10-4 10-3 10-2 10-1 T p, Pulse Width (s) D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse Figure 12. Safe operation area for TO-252,TO-220,TO-251 Figure 13. Safe operation area for TO-220F 10-1 t p = 10us t p = 100us t p = 1ms t p = 10ms DC 10-1 t p = 10us t p = 100us t p = 1ms t p = 10ms DC 10-2 10 2 10 3 V DS, Drain-Source Voltage(V) 10-2 10 2 10 3 V DS, Drain-Source Voltage(V) V1.0 5
Figure A:Gate Charge Test Circuit and Waveform Figure B:Resistive Switching Test Circuit and Waveform Figure C:Unclamped Inductive Switching Test Circuit and Waveform V1.0 6
TO-220F V1.0 7
TO-252 V1.0 8
TO-220 V1.0 9
TO-251 V1.0 10
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