PD - 96227B Applications l Synchronous Buck Converter for Computer Processor Power l Isolated DC to DC Converters for Network and Telecom l Buck Converters for Set-Top Boxes l System/load switch Benefits l Low R DS(ON) l Very Low Gate Charge l Low Junction to PCB Thermal Resistance l Fully Characterized Avalanche Voltage and Current l 0% Tested for R G l Lead-Free (Qualified up to 260 C Reflow) l RoHS compliant (Halogen Free) IRFH3707PbF HEXFET Power MOSFET V DSS R DS(on) max Qg 30V 2.4m:@V GS = V 5.4nC S S D S D G D D 3mm x 3mm PQFN Absolute Maximum Ratings V DS V GS I D @ T A = 25 C I D @ T A = 70 C I D @ T C = 25 C I D @ T C = 25 C I DM P D @T A = 25 C P D @T A = 70 C T J T STG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, V GS @ V Continuous Drain Current, V GS @ V Continuous Drain Current, V GS @ V Continuous Drain Current, V GS @ V (Package Limited) Pulsed Drain Current c Power Dissipation g Power Dissipation g Linear Derating Factor g Operating Junction and Storage Temperature Range Max. 30 ± 20 2 9.4 29 8 96 2.8.8 0.02-55 to 50 Units V A W W/ C C Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case f 7.5 R θja Junction-to-Ambient gh 45 C/W R θja Junction-to-Ambient (t<s) h 3 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page www.irf.com 09/7/
IRFH3707PbF Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV DSS Drain-to-Source Breakdown Voltage 30 V ΒV DSS / T J Breakdown Voltage Temp. Coefficient 0.02 V/ C gfs Forward Transconductance 7 S V DS = 5V, I D = 9.4A Q g Total Gate Charge 5.4 8. Q gs Pre-Vth Gate-to-Source Charge. V DS = 5V Q gs2 Post-Vth Gate-to-Source Charge 0.7 V GS = 4.5V nc Q gd Gate-to-Drain Charge 2.2 I D = 9.4A Q godr Gate Charge Overdrive.5 See Fig.7 & 8 Q sw Switch Charge (Q gs2 Q gd ) 2.9 Q oss Output Charge 3.8 nc V DS = 6V, V GS = 0V R G Gate Resistance 2.0 Ω t d(on) Turn-On Delay Time 9.0 V DD = 5V, V GS = 4.5V t r Rise Time I D = 9.4A ns t d(off) Turn-Off Delay Time 9.9 R G =.3Ω t f Fall Time 5.6 See Fig.5 C iss Input Capacitance 755 V GS = 0V C oss Output Capacitance 7 pf V DS = 5V C rss Reverse Transfer Capacitance 83 ƒ =.0MHz Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy d 3 mj I AR Avalanche Current c 9.4 A Diode Characteristics Conditions V GS = 0V, I D = 250µA Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance 9.4 2.4 V GS = V, I D = 2A e mω 4.5 7.9 V GS = 4.5V, I D = 9.4A e V GS(th) Gate Threshold Voltage.35.8 2.35 V V V DS = V GS, I D = 25µA GS(th) Gate Threshold Voltage Coefficient -6.2 mv/ C I DSS Drain-to-Source Leakage Current.0 V DS = 24V, V GS = 0V µa 50 V DS = 24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 0 V GS = 20V na Gate-to-Source Reverse Leakage -0 V GS = -20V Parameter Min. Typ. Max. Units Conditions I D S Continuous Source Current MOSFET symbol 3.5 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 96 S (Body Diode)c p-n junction diode. V SD Diode Forward Voltage.0 V T J = 25 C, I S = 9.4A, V GS = 0V e t rr Reverse Recovery Time 20 30 ns T J = 25 C, I F = 9.4A, V DD = 5V Q rr Reverse Recovery Charge 27 4 nc di/dt = 200A/µs e t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LSLD) 2 www.irf.com
I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFH3707PbF 00 0 VGS TOP V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V BOTTOM 2.7V 00 0 VGS TOP V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V BOTTOM 2.7V 2.7V 60µs PULSE WIDTHTj = 25 C 0. 0. 0 V DS, Drain-to-Source Voltage (V) 2.7V 60µs PULSE WIDTH Tj = 50 C 0. 0 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 0.8.6 I D = 2A V GS = V.4 T J = 50 C T J = 25 C.2.0 0. V DS = 5V 60µs PULSE WIDTH 2 3 4 5 6 V GS, Gate-to-Source Voltage (V) 0.8 0.6-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) IRFH3707PbF 000 00 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd C iss 4.0 2.0.0 8.0 I D = 9.4A V DS = 24V V DS = 5V C oss 6.0 0 C rss 4.0 2.0 0 0.0 0 2 4 6 8 2 4 6 V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 00 00 OPERATION IN THIS AREA LIMITED BY R DS (on) 0 0 T J = 50 C 0µsec T J = 25 C V GS = 0V 0. 0.2 0.4 0.6 0.8.2.4.6 V SD, Source-to-Drain Voltage (V) 0. T A = 25 C Tj = 50 C Single Pulse msec msec 0 0 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
I D, Drain Current (A) V GS(th), Gate Threshold Voltage (V) IRFH3707PbF 2 2.5 2.0 8 I D = 25µA 6.5 4.0 2 0 25 50 75 0 25 50 T A, Ambient Temperature ( C) 0.5-75 -50-25 0 25 50 75 0 25 50 T J, Temperature ( C ) Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig. Threshold Voltage Vs. Temperature 0 Thermal Response ( Z thja ) C/W D = 0.50 0.20 0. 0.05 0.02 0.0 0. SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthja T A 0.0 E-006 E-005 0.000 0.00 0.0 0. 0 00 t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5
E AS, Single Pulse Avalanche Energy (mj) IRFH3707PbF R DS(on), Drain-to -Source On Resistance (m Ω) 35 60 30 25 I D = 2A 50 40 I D TOP 2.95A 3.63A BOTTOM 9.40A 20 T J = 25 C 30 5 20 T J = 25 C 5 2 4 6 8 2 4 6 8 20 V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance vs. Gate Voltage 0 25 50 75 0 25 50 Starting T J, Junction Temperature ( C) Fig 3. Maximum Avalanche Energy vs. Drain Current 5V V DS R D V DS L DRIVER R G V GS D.U.T. - V DD R G 20V tp D.U.T IAS 0.0Ω - V DD A VV GS Pulse Width µs Duty Factor 0. Fig 4a. Unclamped Inductive Test Circuit Fig 5a. Switching Time Test Circuit tp V (BR)DSS V DS 90% % V GS I AS t d(on) t r t d(off) t f Fig 4b. Unclamped Inductive Waveforms Fig 5b. Switching Time Waveforms 6 www.irf.com
IRFH3707PbF - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 6. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Current Regulator Same Type as D.U.T. Vds Id 50KΩ Vgs 2V.2µF.3µF D.U.T. V - DS Vgs(th) V GS 3mA I G I D Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 7. Gate Charge Test Circuit Fig 8. Gate Charge Waveform www.irf.com 7
IRFH3707PbF PQFN Package Details Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com
IRFH3707PbF PQFN Part Marking PQFN Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9
IRFH3707PbF Orderable part number Package Type Standard Pack Form Quantity IRFH3707TRPBF PQFN 3mm x 3mm Tape and Reel 4000 Note Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JEDE C JE S D47F guidelines ) MS L PQFN 3mm x 3mm (per IPC/JE DEC J-S T D-020D ) Yes Qualification standards can be found at International Rectifier s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.297mH, R G = 25Ω, I AS = 9.4A. ƒ Pulse width 400µs; duty cycle 2%. Rthjc is guaranteed by design. When mounted on inch square 2 oz copper pad on.5x.5 in. board of FR-4 material. Refer to application note #AN-994. Data and specifications subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.09/20 www.irf.com