C131 REV5_22 Low Noise and Medium Power GaAs FEs FEAURES! Low Noise Figure: NF = db ypical at 1 PHOO ENLARGEMEN! High Associated Gain: Ga = 1 db ypical at 1! High Dynamic Range: 1 db Compression Power P -1 = 24.5 dbm at 1! Breakdown Voltage: BV DGO 9 V! Lg = 5 µm, Wg = 6 µm! All-Gold Metallization for High Reliability! ight Vp ranges control! High RF input power handling capability! 1 % DC ested DESCRIPION he C131 is a GaAs Pseudomorphic High Electron Mobility ransistor (PHEM) chip, which has very low noise figure, high associated gain and high dynamic range. he device can be used in circuits up to 3 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 1% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECRICAL SPECIFICAIONS ( A =25 C) Symbol Conditions MIN YP MAX UNI NF Noise Figure at V DS = 4 V, I DS = 5 ma, f = 1 1. db G a Associated Gain at V DS = 4 V, I DS = 5 ma, f = 1 9 1 db P 1dB Output Power at 1dB Gain Compression Point, f = 1 V DS = 6 V, I DS = 8 ma 23.5 24.5 dbm G L Linear Power Gain, f = 1,V DS = 6 V, I DS = 8 ma 9 1 db I DSS Saturated Drain-Source Current at V DS = 2 V, V GS = V 18 ma g m ransconductance at V DS = 2 V, V GS = V 2 ms V P Pinch-off Voltage at V DS = 2 V, I D = 1.2 ma -1.* Volts BV DGO Drain-Gate Breakdown Voltage at I DGO =.3 ma 9 12 Volts R th hermal Resistance 6 C/W Note: * For the tight control of the pinch-off voltage. C131 s are divided into 3 groups: (1) C131P71 : Vp = -.7V to -1.V (2) C131P811 : Vp = -V to -1.1V (3) C131P912 : Vp = -.9V to -1.2V In addition, the customers may specify their requirements. RANSCOM, INC., 9 Dasoong 7 th Road, ainan Science-Based Industrial Park, Hsin-She Shiang, ainan County, aiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5586 Fax: 886-6-55162 1 / 6
C131 REV5_22 ABSOLUE MAXIMUM RAINGS ( A =25 C) YPICAL NOISE PARAMEERS ( A =25 C) Symbol Parameter Rating V DS Drain-Source Voltage 7. V V GS Gate-Source Voltage - V I DS Drain Current I DSS I GS Gate Current 6 µa P in RF Input Power, CW 24 dbm P Continuous Dissipation 8 mw CH Channel emperature 1 C SG Storage emperature - 65 C to +1 C V DS = 4 V, I DS = 5 ma Frequency (GHz) NF opt (db) G A Γ opt (db) MAG ANG Rn/5 2.36 19.7 8 8 4.48 16.6.74 39.18 6.59 14.3 2 64. 8.7 12.7.55 92.12 1.78 11.7.5 12.9 12 5 1.9.49 148.6 14.98 1.4.5 174.4 16 1.12 9.8.51-162.4 18 1.27 9..54-141.7 CHIP DIMENSIONS 76± 12 D D D 29± 12 S G S G S G S Chip hickness: 1 Drain Pad: 8 x 7 Source Pad: x 8 RANSCOM, INC., 9 Dasoong 7 th Road, ainan Science-Based Industrial Park, Hsin-She Shiang, ainan County, aiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5586 Fax: 886-6-55162 2 / 6
YPICAL SCAERING PARAMEERS.4 - -.4 1-18 -.4-12 -12-1. 1. - -1. S11 9 1.1. -1. - ( A =25 C) V DS = 4 V, I DS = 5 ma C131 REV5_22 2 FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 2 54-8.7 9.9111 129.43.557 48.67.3868-68.29 3.7843-13.76 7.838 1.14.659 38.99.3487-88. 4.74-12.17 6.3123 14.713 33.48.3277-11.61 5.726-13 5.2595 97.31.7 3.31.3178-111.2 6.8-14.93 4.4944 91.1.767 28.54.3147-117.84 7 961-147.93 3.921 85.6.785 27.63.39-122.98 8 897-3.62 3.4764 8.8 27.27.3198-127.2 9 853-8.39 3.1248 76.43.814 27.29.3256-13.3 1 822-162.46 2.8 72.38.828 27.56.3327-138 11 8-166.3 2.665 68.56.843 28.1.346.5 12 785-169.21 2.411 64.93.858 28.56.349-137.67 13 776-177 2.26 61.46.8 29.19.3577-139.65 14 769-174.69 2.142 58.11.892 29.86.3667-141.49 766-177.11 1.9821 54.87.91 3.55.36-143.23 16 765-179.36 1.89 51.72.928 31.23.38-144.89 17 766 178.52 1.7827 48.65.948 31.89.3933-146.47 18 768 176.52 1..65.969 32.53.42-148. * he data does not include gate, drain and source bond wires. S21-9 - 6-6 - - - 3-3 -.1-18 -.1.4-12 -.4-12.4 - - - 9-9 1. 1. -1. S12 S22 6-6 - - 3-3 - - 1.1. -1. - - RANSCOM, INC., 9 Dasoong 7 th Road, ainan Science-Based Industrial Park, Hsin-She Shiang, ainan County, aiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5586 Fax: 886-6-55162 3 / 6
YPICAL SCAERING PARAMEERS.4 - -.4-18 - 5.4-12 -12-1. 1. - -1. S11 9 S21-9 - 6-6 - 1.1. -1. - - - 3-3 - ( A =25 C) V DS = 6 V, I DS = 8 ma.9 FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 2 511-83.76 1.116 128.27.446 48..3787-56.54 3.792-17.47 7.8891 114.27.523 39.6.3349-72. 4.49-123.54 6.3492 14.51.564 34.17.3133-82.94 5.7342-134.97 5.2766 97.9.59 31.58.359-9.91 6.7214-143.52 4.534 91.5.69 3.31.372-97.18 7.7133-3.926 85.88.626 29.84.3138-12.35 8.778-5.61 3.4814 81.28.641 29.86.3237-16.81 9.741-16.12 3.131 77.7.655 3.19.3356-11.76 1.7-163.98 2.8465 73.16.671 3.73.3485-114.34 11 998-167.36 2.6134 69.46.686 31.38.362-117.64 12 986-17.36 2.4188 65.92.73 32.1.37-12.71 13 978-178 2.2542 62.52.72 32.85.3893-123.59 14 973-1.55 2.1134 59.23.738 33.6.427-126.31 971-177.85 1.9919 56.3.6 34.33.47-128.89 16 971-179.98 1.886 52.9.7 33.4283-131.35 17 973 178.1 1.793 49.83.795 35.7.444-133.69 18 976 176.11 1.719 46.82.816 36.32.2.92 *he data does not include gate, drain and source bond wires. SMALL SIGNAL MODEL, V DS = 4 V, I DS = 5 ma C131 REV5_22 RANSCOM, INC., 9 Dasoong 7 th Road, ainan Science-Based Industrial Park, Hsin-She Shiang, ainan County, aiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5586 Fax: 886-6-55162 4 / 6-18 -.3.4 - -.4 12-12.4 - - - 9 1. 1. -1. -9 S12 S22 6-6 - - - 3-3 - 1.1. -1. - -
C131 REV5_22 SCHEMAI PARAMEERS Lg Rg Cgs Ri Cgd Gm Cds Rds Rd Ld Lg.57 nh Rs 1.66 Ohm Rg 8 Ohm Ls.19 nh Cgs.959 pf Cds.167 pf Ri 5.78 Ohm Rds 93.2 Ohm Cgd.74 pf Rd 1.358 Ohm Rs Gm 28 ms Ld.38 nh 5.54 psec Ls SMALL SIGNAL MODEL, V DS = 6 V, I DS = 8 ma SCHEMAI PARAMEERS Lg Rg Cgs Ri Cgd Gm Cds Rds Rd Ld Lg.56 nh Rs 1.88 Ohm Rg 1.954 Ohm Ls.16 nh Cgs 1.33 pf Cds.185 pf Ri 5.58 Ohm Rds 9.1 Ohm Cgd.52 pf Rd 1.422 Ohm Rs Gm 3 ms Ld.36 nh 5.63 psec Ls LARGE SIGNAL MODEL, V DS = 6 V, I DS = 8 ma RANSCOM, INC., 9 Dasoong 7 th Road, ainan Science-Based Industrial Park, Hsin-She Shiang, ainan County, aiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5586 Fax: 886-6-55162 5 / 6
C131 REV5_22 SCHEMAIC OM2 MODEL PARAMEERS Lg Rg Cgs Ris Cgd Rid Id Rs Ls Cds Rdb Cbs Rd Ld Parameters Parameters VO -.43283 V VMAX.5 V ALPHA 9.54 CGD.554 pf BEA.49 CGS 6.18 pf GAMMA.416 CDS.99 pf DELA.391 RIS 5.5 Ohm Q 4 RID.1 Ohm NG.1 VBR 9 V ND.1 RDB 94.333 Ohm AU 5.558 ps CBS.463 pf RG 833 Ohm NOM 25 C RD 1.358 Ohm LS.1893 nh RS 1.662 Ohm LG.576 nh IS 1E-11 ma LD.38 nh N 1 AFAC 1 VBI 1 V NFING 1 VDELA V CHIP HANDLING DIE AACHMEN: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (8%Au-2%Sn) perform at stage temperature: 29 C ± 5 C; Handling ool: weezers; ime: less than 1min. WIRE BONDING: he recommended wire bond method is thermocompression bonding with.7 to 1. mil (.18 to.25 mm) gold wire. Stage temperature: 22 C to 25 C; Bond ip emperature: C; Bond Force: 2 to 3 gms depending on size of wire and Bond ip emperature. HANDLING PRECAUIONS: he user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. he static discharge must be less than 3V. RANSCOM, INC., 9 Dasoong 7 th Road, ainan Science-Based Industrial Park, Hsin-She Shiang, ainan County, aiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5586 Fax: 886-6-55162 6 / 6