Surface Mount Trench MOS Barrier Schottky Rectifier

Similar documents
FEATURES. PARAMETER SYMBOL V8PAM10 UNIT Device marking code Maximum repetitive peak reverse voltage V RRM 100 V

Surface Mount Trench MOS Barrier Schottky Rectifier

Surface Mount Trench MOS Barrier Schottky Rectifier

Surface Mount Schottky Barrier Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Surface Mount Schottky Barrier Rectifier

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Schottky Barrier Rectifiers

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Dual Common Cathode Schottky Rectifier

High Current Density Surface Mount Schottky Barrier Rectifiers

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Surface-Mount Glass Passivated Rectifier

High Current Density Surface Mount High Voltage Schottky Rectifier

High Current Density Surface Mount High Voltage Schottky Rectifiers

Fast Switching Avalanche Surface Mount Rectifiers

Ultrafast Avalanche Surface Mount Rectifiers

Ultrafast Avalanche Surface Mount Rectifiers

High Current Density Surface Mount Ultrafast Rectifiers

Surface-Mount Standard Rectifiers

Surface Mount Standard Rectifiers

Surface Mount Glass Passivated Rectifier

High Current Density Surface Mount Dual Common Cathode Schottky Rectifiers

SMD Photovoltaic Solar Cell Protection Schottky Rectifier

SMD Photovoltaic Solar Cell Protection Schottky Rectifier

SMD Photovoltaic Solar Cell Protection Rectifier

Surface Mount ESD Capability Rectifiers

High Current Density Surface Mount Glass Passivated Rectifiers

Surface Mount Fast Avalanche Rectifiers

High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier

High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier

Photovoltaic Solar Cell Protection Schottky Rectifier

High Voltage Ultrafast Avalanche SMD Rectifiers

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Surface Mount Ultrafast Plastic Rectifier

Surface Mount Ultrafast Plastic Rectifier

Surface Mount Ultrafast Plastic Rectifier

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

Photovoltaic Solar Cell Protection Schottky Rectifier

Glass Passivated Ultrafast Plastic Rectifier

High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier

Surface Mount Ultra Fast Rectifier

MSP3V3, MSP5.0A. Surface Mount TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES. Series.

Surface Mount Ultrafast Plastic Rectifier

Glass Passivated Junction Plastic Rectifier

General Purpose Plastic Rectifier

Schottky Barrier Rectifier

Surface Mount Ultrafast Plastic Rectifier

High-Voltage Trench MOS Barrier Schottky Rectifier

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Ultrafast Avalanche SMD Rectifier

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

Surface Mount Glass Passivated Junction Rectifier

UF4001, UF4002, UF4003, UF4004, UF4005, UF4006, UF4007 Ultrafast Plastic Rectifier

High Current Density Surface Mount Glass Passivated Rectifiers

Ultrafast Avalanche SMD Rectifier

Ultrafast Avalanche SMD Rectifier

High Voltage Schottky Rectifier

Fast Avalanche SMD Rectifier

Surface Mount Power Voltage-Regulating Diodes

Photovoltaic Solar Cell Protection Schottky Rectifier

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier

Surface Mount TRANSZORB Transient Voltage Suppressors

BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y Standard Avalanche SMD Rectifier

Dual Common Cathode High Voltage Schottky Rectifier

V20150SG-E3, VF20150SG-E3, VB20150SG-E3, VI20150SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier

High Voltage Glass Passivated Junction Plastic Rectifier

Dual Common-Cathode Ultrafast Rectifier

Surface Mount TRANSZORB Transient Voltage Suppressors

High Voltage Schottky Rectifier

Dual Common Cathode Ultrafast Plastic Rectifier

Ultrafast Rectifier FEATURES

FEATURES. Package. PARAMETER SYMBOL PB3506 PB3508 PB3510 UNIT Maximum repetitive peak reverse voltage V RRM V 35 T A = 25 C (2) 4.

Hyperfast Rectifier, 3 A FRED Pt

Dual Common Cathode Ultrafast Plastic Rectifier

Ultrafast Plastic Rectifier

Hyper Fast Rectifier, 2 x 3 A FRED Pt

High Temperature Stability and High Reliability Conditions FEATURES

Ultrafast Plastic Rectifier

Ultrafast Avalanche SMD Rectifier

High Temperature Stability and High Reliability Conditions FEATURES

Dual Common Cathode Ultrafast Rectifier

High Temperature Stability and High Reliability Conditions FEATURES

High Power Density Surface Mount PAR Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions FEATURES

Dual Common Cathode Schottky Rectifier

High Temperature Stability and High Reliability Conditions FEATURES. PARAMETER SYMBOL VALUE UNIT with 10/1000 μs waveform Peak pulse power dissipation

High Temperature Stability and High Reliability Conditions FEATURES

Fast Avalanche SMD Rectifier

FEATURES. Package. PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT Maximum repetitive peak reverse voltage V RRM V

Hyperfast Rectifier, 2 A FRED Pt

High Temperature Stability and High Reliability Conditions FEATURES

General Purpose Plastic Rectifier

Schottky Barrier Rectifiers

P4KE6.8A thru P4KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS

Enhanced isocink+ Bridge Rectifiers

Fast Rectifier Surface Mount

Transcription:

Surface Mount Trench MOS Barrier Schottky Rectifier TMBS esmp Series Top View SlimSMA (DO-22AC) Cathode DESIGN SUPPORT TOOLS Models Available Bottom View PRIMARY CHARACTERISTICS Anode click logo to get started I F(AV) 3 A V RRM V I FSM 80 A V F at I F = 3 A (25 C) 0.56 V T J max. 75 C Package SlimSMA (DO-22AC) Circuit configuration Single FEATURES Very low profile - typical height of 0.95 mm Ideal for automated placement Trench MOS Schottky technology Low power losses, high efficiency Low forward voltage drop Meets MSL level, per J-STD-020, LF maximum peak of 260 C AEC-Q0 qualified available - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, DC/DC converters, and polarity protection in commercial, industrial, and automotive applications. MECHANICAL DATA Case: SlimSMA (DO-22AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q0 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B02 M3 and HM3 suffix meets JESD 20 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS ( unless otherwise noted) PARAMETER SYMBOL UNIT Device marking code 3M0 Maximum repetitive peak reverse voltage V RRM V Maximum DC forward current I () F(AV) 2.3 I (2) F(AV) 3 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I FSM 80 A Operating junction and storage temperature range T J, T STG -40 to +75 C () Free air, mounted on recommended copper pad area (2) Mounted on 30 mm x 30 mm pad area Revision: 04-May-208 Document Number: 87507 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

ELECTRICAL CHARACTERISTICS ( unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I F =.5 A 0.54 - I F = 3 A 0.64 0.72 Instantaneous forward voltage per V () F V I F =.5 A 0.46 - I F = 3 A 0.56 0.64 0.0 - V R = 70 V I (2) R ma 0.7 - Reverse current - 0.2 V R = V I R ma.5 3.5 Typical junction capacitance 4.0 V, MHz C J 364 - pf () Pulse test: 300 μs pulse width, % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL UNIT Typical thermal resistance R JA ()(2) 5 R JM (3) 2 () Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R JA - junction to ambient, R JM - junction to mount (2) The heat generated must be less than thermal conductivity from junction-to-ambient: dp D /DT J < /R JA (3) Mounted on 30 mm x 30 mm pad area C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE -M3/H 0.032 H 3500 7" diameter plastic tape and reel -M3/I 0.032 I 4 000 3" diameter plastic tape and reel HM3/H () 0.032 H 3500 7" diameter plastic tape and reel HM3/I () 0.032 I 4 000 3" diameter plastic tape and reel Note () AEC-Q0 qualified Revision: 04-May-208 2 Document Number: 87507 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

RATINGS AND CHARACTERISTICS CURVES ( unless otherwise noted) Average Forward Rectified Current (A) 4.0 3.0 2.0.0 0.0 Rth JM =2 C/W Rth JA =5 C/W 0 25 50 75 25 50 75 Instantaneous Reverse Current (ma) 0 0. 0.0 0.00 0.000 0.0000 T J = 75 C T J = C T J = 50 C T J = -40 C 0.00000 0 20 30 40 50 60 70 80 90 Mount Temperature ( C) Percent of Rated Peak Reverse Voltage (%) Fig. - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics Average Power Loss (W) 2.5 2.0.5.0 0.5 D = 0. D = 0.2 D = 0.8 D = 0.5 D = 0.3 D =.0 T Junction Capacitance (pf) 0 0 f =.0 MHz V sig = 50 mv p-p D = t p /T t p 0.0 0 2 3 4 0. 0 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Instantaneous Forward Current (A) 0 0. T J = 75 C T J = 50 C T J = C T J = -40 C 0 0. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9.0..2 Transient Thermal Impedance ( C/W) 0 Junction to Ambient 0 0.0 0. 0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 04-May-208 3 Document Number: 87507 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

Thermal Resistance ( C/W) 20 80 60 40 20 0 Epoxy printed circuit board FR4 copper thickness = 70 μm S (cm 2 ) 0 2 3 4 5 6 7 8 9 0 Copper Pad Areas (cm 2 ) Fig. 7 - Thermal Resistance Junction to Ambient vs. Copper Pad Area PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Cathode Band SlimSMA (DO-22AC) 0.06 (2.70) 0.098 (2.50) 0.057 (.45) 0.049 (.25) 0.7 (4.35) 0.63 (4.5) 0.2 (5.35) 0.99 (5.05) 0.047 (.20) 0.030 (0.75) Mounting Pad Layout Typ.: 0.09 (0.48) 0.039 (.00) 0.035 (0.90) 0.02 (0.30) 0.006 (0.5) 0.060 (.52) 0.047 (.20) 0.23 (3.2) MAX. 0.27 (5.52) REF. 0.047 (.20) Revision: 04-May-208 4 Document Number: 87507 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?90

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 207 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-7 Document Number: 90