Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)free Available Available RoHS* COMPLIANT TO220 G DS G D S NChannel MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. The TO220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)free SnPb TO220 IRF510PbF SiHF510E3 IRF510 SiHF510 ABSOLUTE MAXIMUM RATINGS T C = 25 C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT DrainSource Voltage 100 V GateSource Voltage ± 20 Continuous Drain Current at T C = 25 C 5.6 I D T C = 100 C 4.0 A Pulsed Drain Current a I DM 20 Linear Derating Factor 0.29 W/ C Single Pulse Avalanche Energy b E AS 100 mj Repetitive Avalanche Current a I AR 5.6 A Repetitive Avalanche Energy a E AR 4.3 mj Maximum Power Dissipation T C = 25 C P D 43 W Peak Diode Recovery dv/dt c dv/dt 5.5 V/ns Operating Junction and Storage Temperature Range T J, T stg 55 to 175 Soldering Recommendations (Peak Temperature) for 10 s 300 d C Mounting Torque 632 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. = 25 V, starting T J = 25 C, L = 4.8 mh, R G = 25 Ω, I AS = 5.6 A (see fig. 12). c. I SD 5.6 A, di/dt 75 A/µs,, T J 175 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply 10 lbf in 1.1 N m Document Number: 91015 www.vishay.com S81377Rev. A, 30Jun08 1
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 62 CasetoSink, Flat, Greased Surface R thcs 0.50 C/W Maximum JunctiontoCase (Drain) R thjc 3.5 SPECIFICATIONS T J = 25 C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage = 0 V, I D = 250 µa 100 V Temperature Coefficient Δ /T J Reference to 25 C, I D = 1 ma 0.12 V/ C GateSource Threshold Voltage (th) =, I D = 250 µa 2.0 4.0 V GateSource Leakage I GSS = ± 20 V ± 100 na = 100 V, = 0 V 25 Zero Gate Voltage Drain Current I DSS = 80 V, = 0 V, T J = 150 C 250 µa DrainSource OnState Resistance R DS(on) = I D =3.4 A b 0.54 Ω Forward Transconductance g fs = 50 V, I D = 3.4 A b 1.3 S Dynamic Input Capacitance C iss = 0 V, 180 Output Capacitance C oss = 25 V, 81 pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig. 5 15 Total Gate Charge Q g I D = 5.6 A, = 80 V 8.3 GateSource Charge Q gs = =, 2.3 nc GateDrain Charge Q gd see fig. 6 and 13 b 3.8 TurnOn Delay Time t d(on) 6.9 Rise Time t r = 50 V, I D = 5.6 A 16 TurnOff Delay Time t d(off) R G = 24 Ω, R D = 8.4 Ω, see fig. 10 b 15 ns Fall Time t f 9.4 Between lead, D Internal Drain Inductance L D 4.5 6 mm (0.25") from G package and center of Internal Source Inductance L S die contact 7.5 S nh DrainSource Body Diode Characteristics MOSFET symbol Continuous SourceDrain Diode Current I S showing the 5.6 D integral reverse G Pulsed Diode Forward Current a I SM p n junction diode 20 S A Body Diode Voltage V SD T J = 25 C, I S = 5.6 A, = 0 V b 2.5 V Body Diode Reverse Recovery Time t rr T J = 25 C, I F = 5.6 A, di/dt = 100 A/µs b 100 200 ns Body Diode Reverse Recovery Charge Q rr 0.44 0.88 µc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 µs; duty cycle 2 %. www.vishay.com Document Number: 91015 2 S81377Rev. A, 30Jun08
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 1 10 0 Top 15 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 4.5 V 10 1 10 0 25 C 175 C 20 µs Pulse Width T C = 25 C 10 1 20 µs Pulse Width = 50 V 10 1 10 0 10 1 4 5 6 7 8 9 10 91015_01, DraintoSource Voltage (V) 91015_03, GatetoSource Voltage (V) Fig. 1 Typical Output Characteristics, T C = 25 C Fig. 3 Typical Transfer Characteristics 91015_02 10 1 10 0 Top Bottom 15 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.5 V 20 µs Pulse Width T C = 175 C 10 1 10 0 10 1, DraintoSource Voltage (V) R DS(on), DraintoSource On Resistance (Normalized) 91015_04 3.0 2.5 2.0 1.5 1.0 0.5 I D = 5.6 A = 0.0 60 40 20 0 20 40 60 80 100 120 140160 180 T J, Junction Temperature ( C) Fig. 2 Typical Output Characteristics, T C = 175 C Fig. 4 Normalized OnResistance vs. Temperature Document Number: 91015 www.vishay.com S81377Rev. A, 30Jun08 3
Capacitance (pf) 91015_05 400 320 240 160 80 0 10 0 10 1 = 0 V, f = 1 MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd C iss C oss C rss, DraintoSource Voltage (V) I SD, Reverse Drain Current (A) 91015_07 10 0 10 1 175 C 25 C = 0 V 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 V SD, SourcetoDrain Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage Fig. 7 Typical SourceDrain Diode Forward Voltage, GatetoSource Voltage (V) 91015_06 20 16 12 8 4 0 I D = 5.6 A = 20 V = 50 V = 80 V 0 2 4 6 8 Q G, Total Gate Charge (nc) For test circuit see figure 13 10 91015_08 10 2 5 2 10 5 2 1 5 2 0.1 2 5 1 10 Operation in this area limited by R DS(on) T C = 25 C T J = 175 C Single Pulse 2 5 100 µs 1 ms 10 ms 10 2 2 5, DraintoSource Voltage (V) 10 3 Fig. 6 Typical Gate Charge vs. GatetoSource Voltage Fig. 8 Maximum Safe Operating Area www.vishay.com Document Number: 91015 4 S81377Rev. A, 30Jun08
R D 6.0 5.0 4.0 3.0 2.0 1.0 Fig. 10a Switching Time Test Circuit 90 % R G Pulse width 1 µs Duty factor 0.1 % D.U.T. 91015_09 0.0 25 50 75 100 125 150 T C, Case Temperature ( C) 175 10 % t d(on) t r t d(off) t f Fig. 9 Maximum Drain Current vs. Case Temperature Fig. 10b Switching Time Waveforms 10 Thermal Response (Z thjc ) 1 0.1 0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse (Thermal Response) 10 2 10 5 10 4 10 3 10 2 0.1 1 10 P DM t 1 t 2 Notes: 1. Duty Factor, D = t 1 /t 2 2. Peak T j = P DM x Z thjc T C 91015_11 t 1, Rectangular Pulse Duration (s) Fig. 11 Maximum Effective Transient Thermal Impedance, JunctiontoCase Vary t p to obtain required I AS R G L D.U.T I AS t p t p 0.01 Ω A I AS Fig. 12a Unclamped Inductive Test Circuit Fig. 12b Unclamped Inductive Waveforms Document Number: 91015 www.vishay.com S81377Rev. A, 30Jun08 5
E AS, Single Pulse Energy (mj) 91015_12c 300 250 200 150 100 50 Top Bottom = 25 V 0 25 50 75 100 125 150 I D 2.3 A 4.0 A 5.6 A Starting T J, Junction Temperature ( C) 175 Fig. 12c Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q G 12 V 0.2 µf 50 kω 0.3 µf Q GS Q GD D.U.T. V DS V G Charge Fig. 13a Basic Gate Charge Waveform 3 ma Fig. 13b Gate Charge Test Circuit I G I D Current sampling resistors www.vishay.com Document Number: 91015 6 S81377Rev. A, 30Jun08
Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by duty factor "D" D.U.T. device under test Driver gate drive P.W. Period D = P.W. Period = * D.U.T. I SD waveform Reverse recovery current Reapplied voltage Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt Inductor current Body diode forward drop Ripple 5 % I SD * = 5 V for logic level devices Fig. 14 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91015. Document Number: 91015 www.vishay.com S81377Rev. A, 30Jun08 7
Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, lifesaving, or lifesustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 www.vishay.com Revision: 18Jul08 1