Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) (Ω) V GS = V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single TO220 G D S ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET FEATURES Low Gate Charge Q g Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective C oss Specified Lead (Pb)free Available APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply High Speed Power Switching Available RoHS* COMPLIANT TYPICAL SMPS TOPOLOGIES Single Transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset (Both for US Line Input Only) TO220 IRF740APbF SiHF740AE3 IRF740A SiHF740A ABSOLUTE MAXIMUM RATINGS T C = 25 C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT GateSource Voltage V GS ± 30 V Continuous Drain Current V GS at V T C = 25 C I D T C = 0 C 6.3 A Pulsed Drain Current a I DM 40 Linear Derating Factor.0 W/ C Single Pulse Avalanche Energy b E AS 630 mj Repetitive Avalanche Current a I AR A Repetitive Avalanche Energy a E AR 2.5 mj Maximum Power Dissipation T C = 25 C P D 25 W Peak Diode Recovery dv/dt c dv/dt 5.9 V/ns Operating Junction and Storage Temperature Range T J, T stg 55 to 50 Soldering Recommendations (Peak Temperature) for s 300 d C Mounting Torque 632 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. V DD = 50 V, starting T J = 25 C, L = 2.6 mh, R G = 25 Ω I AS = A (see fig. 2). c. I SD A, dv/dt 330 A/µs, V DD V DS, T J 50 C. d..6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply lbf in. N m Document Number: 95 www.vishay.com S829Rev. A, 6Jun08
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 62 CasetoSink, Flat, Greased Surface R thcs 0.50 C/W Maximum JunctiontoCase (Drain) R thjc.0 SPECIFICATIONS T J = 25 C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage V DS V GS = 0 V, I D = 250 µa 400 V V DS Temperature Coefficient ΔV DS /T J Reference to 25 C, I D = ma 0.48 V/ C GateSource Threshold Voltage V GS(th) V DS = V GS, I D = 250 µa 2.0 4.0 V GateSource Leakage I GSS V GS = ± 30 V ± 0 na V DS = 400 V, V GS = 0 V 25 Zero Gate Voltage Drain Current I DSS V DS = 320 V, V GS = 0 V, T J = 25 C 250 µa DrainSource OnState Resistance R DS(on) V GS = V I D = 6.0 A b 0.55 Ω Forward Transconductance g fs V DS = 50 V, I D = 6.0 A b 4.9 S Dynamic Input Capacitance C iss V GS = 0 V, 30 Output Capacitance C oss V DS = 25 V, 70 f =.0 MHz, see fig. 5 Reverse Transfer Capacitance C rss 7.7 pf V GS = 0 V, V DS =.0 V, f =.0 MHz 490 Output Capacitance C oss V GS = 0 V, V DS = 320 V, f =.0 MHz 52 Effective Output Capacitance C oss V GS = 0 V, V DS = 0 V to 320 V 6 Total Gate Charge Q g 36 GateSource Charge Q gs I V GS = V D = A, V DS = 320 V, see fig. 6 and 3 b 9.9 nc GateDrain Charge Q gd 6 TurnOn Delay Time t d(on) Rise Time t r V DD = 200 V, I D = A, 35 TurnOff Delay Time t d(off) R G = Ω, R D = 9.5 Ω, see fig. b 24 ns Fall Time t f 22 DrainSource Body Diode Characteristics Continuous SourceDrain Diode Current I MOSFET symbol D S showing the G integral reverse Pulsed Diode Forward Current a I SM p n junction diode S 40 A Body Diode Voltage V SD T J = 25 C, I S = A, V GS = 0 V b 2.0 V Body Diode Reverse t rr 240 360 ns Recovery Time T J = 25 C, I F = A, di/dt = 0 A/µs b Body Diode Reverse Recovery Charge Q rr.9 2.9 µc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Pulse width 300 µs; duty cycle 2 %. www.vishay.com Document Number: 95 2 S829Rev. A, 6Jun08
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted I D, DraintoSource Current (A) 0 0. VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, DraintoSource Current (A) 0 T J = 50 C T J = 25 C 20μs PULSE WIDTH 0.0 T J = 25 C 0. 0 V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics, T C = 25 C V DS= 50V 20μs PULSE WIDTH 0. 4.0 5.0 6.0 7.0 8.0 9.0.0 V GS, GatetoSource Voltage (V) Fig. 3 Typical Transfer Characteristics I D, DraintoSource Current (A) 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 50 C 0. 0. 0 V DS, DraintoSource Voltage (V) Fig. 2 Typical Output Characteristics, T C = 50 C R DS(on), DraintoSource On Resistance (Normalized) 3.0 I D = A 2.5 2.0.5.0 0.5 V GS = V 0.0 60 40 20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig. 4 Normalized OnResistance vs. Temperature Document Number: 95 www.vishay.com S829Rev. A, 6Jun08 3
0000 000 C, Capacitance(pF) 00 0 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd Ciss Coss Crss I SD, Reverse Drain Current (A) 0 T J = 50 C T J = 25 C 0 00 V DS, DraintoSource Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage V GS = 0 V 0. 0.2 0.4 0.6 0.8.0.2.4 V SD,SourcetoDrain Voltage (V) Fig. 7 Typical SourceDrain Diode Forward Voltage V GS, GatetoSource Voltage (V) 20 6 2 8 4 I = D A V DS = 320V V DS = 200V V DS = 80V FOR TEST CIRCUIT SEE FIGURE 3 0 0 20 30 40 Q G, Total Gate Charge (nc) Fig. 6 Typical Gate Charge vs. GatetoSource Voltage I D, Drain Current (A) 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms TC = 25 C TJ = 50 C Single Pulse ms 0 00 V DS, DraintoSource Voltage (V) Fig. 8 Maximum Safe Operating Area www.vishay.com Document Number: 95 4 S829Rev. A, 6Jun08
.0 V DS R D V GS D.U.T. 8.0 R G V DD I D, Drain Current (A) 6.0 4.0 2.0 V Pulse width µs Duty factor 0. % Fig. a Switching Time Test Circuit V DS 90 % 0.0 25 50 75 0 25 50 T C, Case Temperature ( C) % V GS t d(on) t r t d(off) t f Fig. 9 Maximum Drain Current vs. Case Temperature Fig. b Switching Time Waveforms Thermal Response (Z thjc ) 0. 0.0 D = 0.50 0.20 0. 0.05 0.02 0.0 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc TC 0.00 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) PDM Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase t t2 5 V t p V DS V DS L Driver R G 20 V t p D.U.T I AS 0.0 Ω V DD A I AS Fig. 2a Unclamped Inductive Test Circuit Fig. 2b Unclamped Inductive Waveforms Document Number: 95 www.vishay.com S829Rev. A, 6Jun08 5
V DSav, Avalanche Voltage ( V ) IRF740A, SiHF740A E AS, Single Pulse Avalanche Energy (mj) 400 200 00 800 600 400 200 TOP BOTTOM I D 4.5A 6.3A A 0 25 50 75 0 25 50 Starting T, Junction Temperature ( J C) Fig. 2c Maximum Avalanche Energy vs. Drain Current 580 560 540 520 500 480.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0.0 I AV, Avalanche Current ( A) Fig. 2d Typical DraintoSource Voltage Vs. Avalanche Current Current regulator Same type as D.U.T. V GS Q G 2 V 0.2 µf 50 kω 0.3 µf Q GS Q GD D.U.T. V DS V G V GS 3 ma Charge Fig. 3a Basic Gate Charge Waveform Fig. 3b Gate Charge Test Circuit I G I D Current sampling resistors www.vishay.com Document Number: 95 6 S829Rev. A, 6Jun08
Peak Diode Recovery dv/dt Test Circuit D.U.T Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by duty factor "D" D.U.T. device under test V DD Driver gate drive P.W. Period D = P.W. Period V GS = V* D.U.T. I SD waveform Reverse recovery current Reapplied voltage Body diode forward current di/dt D.U.T. V DS waveform Diode recovery dv/dt Inductor current Body diode forward drop V DD Ripple 5 % I SD * V GS = 5 V for logic level devices Fig. 4 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?95. Document Number: 95 www.vishay.com S829Rev. A, 6Jun08 7
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