Innogration (Suzhou) Co., Ltd.

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CCharacteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR 30 dbc. Output 0.01% CCDF OPAR 7 db

PTFB213004F. High Power RF LDMOS Field Effect Transistor 300 W, MHz. Description. Features. RF Characteristics

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PTFC270051M. High Power RF LDMOS Field Effect Transistor 5 W, 28 V, MHz. Description. Features. RF Characteristics, 2170 MHz

Efficiency (%) c241002fc-gr1. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc

Efficiency (%) g261701fa-gr1a. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc

not recommended for new design Efficiency (%) Characteristic Symbol Min Typ Max Unit Intermodulation Distortion IMD dbc

Preliminary GTVA126001EC/FC

Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc

Efficiency (%) ptra082808nf_g1. Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR

Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR dbc

Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc. Output 0.01% CCDF OPAR

Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc. Output 0.01% CCDF OPAR 7 7.

Efficiency (%) gtra364002fc_g1. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc

PRELIMINARY. Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units. Small Signal Gain db

Efficiency (%) c261402fc_gr1. Adjacent Channel Power Ratio ACPR dbc All published data at T CASE = 25 C unless otherwise indicated

= 25 C), CW. Parameter 1.7 GHz 1.8 GHz 1.9 GHz Units Small Signal Gain db P in. = 38 dbm

IMD Shoulder (dbc) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc

Characteristic Symbol Min Typ Max Unit. Intermodulation Distortion IMD 35 dbc All published data at T CASE = 25 C unless otherwise indicated

ra097008nb-gr1a. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc. Output 0.01% CCDF OPAR

Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc

= 25 C), CW. Parameter 1.7 GHz 1.8 GHz 1.9 GHz Units Small Signal Gain db P in. = 38 dbm

Drain Efficiency (%) 10 a120501ea_g1-1. Characteristic Symbol Min Typ Max Unit. Return Loss IRL 10 7 db

Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc

Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR dbc

Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc

PTFB193404F. Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, MHz. Description. Features. RF Characteristics

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maintaining high gain and efficiency. Package Type: 3x4 DFN PN: CGHV1F025S Parameter 8.9 GHz 9.2 GHz 9.4 GHz 9.6 GHz Units = 37 dbm W

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CG2H W, DC - 6 GHz, RF Power GaN HEMT APPLICATIONS FEATURES

transistor is available in a flange and pill package. Package Types: & PN s: CG2H40045F & CG2H40045P

Gain: 960 MHz Gain: 1030 MHz Gain: 1090 MHz Gain: 1150 MHz Gain: 1215 MHz Eff: 960 MHz Eff: 1030 MHz Eff: 1090 MHz Eff: 1150 MHz Eff: 1215 MHz

CGH40006P. 6 W, RF Power GaN HEMT APPLICATIONS FEATURES

Parameter 5.2 GHz 5.5 GHz 5.9 GHz Units. Small Signal Gain db. Output Power W. Efficiency

CGH55015F2 / CGH55015P2

PTFC270101M. High Power RF LDMOS Field Effect Transistor 10 W, 28 V, MHz. Description. Features. RF Characteristics

= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain

CGH35060F1 / CGH35060P1

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= 25 C), 50 V. Parameter 0.96 GHz 1.1 GHz 1.25 GHz 1.4 GHz Units. Saturated Output Power W

CMPA801B W, GHz, GaN MMIC, Power Amplifier. Typical Performance Over GHz (T C. Features. Applications

= 25 C) of Demonstration Amplifier. Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units. 43 dbm

= 25 C) Parameter 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units. Gain db. 32 dbm W

which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN

350 W, MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems. = 25 C) of Demonstration Amplifier

Watts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C

Part Number: ILD1011M160HV

= 25 C) Note: Measured in CGHV96100F2-TB (838179) under 100 µs pulse width, 10% duty, Pin 42.0 dbm (16 W) Applications. Marine Radar.

CGHV1J070D. 70 W, 18.0 GHz, GaN HEMT Die

= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W

CGH80030D. 30 W, 8.0 GHz, GaN HEMT Die. 2-Way Private Radio. Broadband Amplifiers. Cellular Infrastructure. Test Instrumentation

Watts W/ C Storage Temperature Range Tstg 65 to +200 C Operating Junction Temperature TJ 200 C. Test Conditions

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz. Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units

= 25 C), 50 V. Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units. Small Signal Gain db

well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and = 25 C), 50 V

= 25 C) Note: Measured at -30 dbc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.

15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz = 25 C) Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.

CPH6354. Power MOSFET 60V, 100mΩ, 4A, Single P-Channel. Features. Specifications

= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W

maintaining high gain and efficiency. Parameter 5.5 GHz 6.0 GHz 6.5 GHz Units Small Signal Gain db = 28 dbm

CGHV1J025D. 25 W, 18.0 GHz, GaN HEMT Die

Efficiency (%) c201202fc-v2-gr1a. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc

Drain Efficiency (%) c262157sh-gr1. Characteristic Symbol Min Typ Max Unit. Gain Gps db. Adjacent Channel Power Ratio ACPR 31.

PRELIMINARY. Cree s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor

PRELIMINARY = 25 C) Parameter GHz 14.0 GHz 14.5 GHz Units Small Signal Gain db P SAT. = 26 dbm W P 3dB

MHz. The package options are ceramic/metal flange and pill package. Package Type: , PN: CGHV14250F, CGHV14250P

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

CGH55030F1 / CGH55030P1

MHz. The package options are ceramic/metal flange and pill package. Package Type: , PN: CGHV14250F, CGHV14250P

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

= 25 C) Parameter 2.5 GHz 4.0 GHz 6.0 GHz Units Gain db W Power P OUT. = 43 dbm

Features. ficiency (%) Eff. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc

Part Number: IGN2729M500-IGN2729M500S

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

LDMOS RF Power Transistor HTN7G21P160H. 1. Features. 2. Applications. 3. Items for Ordering. Package:H2110S-6L. Pin Connections

= 25 C) Parameter 8.0 GHz 9.0 GHz 10.0 GHz 11.0 GHz Units Small Signal Gain db P OUT. = 25 dbm W Power P IN

RF Power GaN Transistor

Transcription:

3400-3600MHz, 40W, 28V RF LDMOS FETs Description The is a 40-watt, internally-matched LDMOS FETs, designed for cellular application with frequencies from 3400 to 3600MHz. It can biased at class AB or Class C for linear or pulse application as well Typical Performance (On Innogration fixture with device soldered): V DD = 28 Volts, I DQ = 380 ma Test signal: Pulsed CW, pulse width: 100Us, Duty cycle: 10% Test signal: WCDMA_1C, (PAR=10.5dB @ 0.01% probability) Features High Efficiency and Linear Gain Operations Integrated ESD Protection Internally Matched for Ease of Use Excellent thermal stability, low HCI drift Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS 65 Vdc Gate--Source Voltage VGS -10 to +10 Vdc Operating Voltage VDD +32 Vdc Storage Temperature Range Tstg -65 to +150 C Case Operating Temperature TC +150 C Operating Junction Temperature TJ +225 C Table 2. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction to Case T C= 85 C, T J=200 C, DC test R JC 0.7 C/W 1 / 5

Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) Class 2 Table 4. Electrical Characteristics (TA = 25 unless otherwise noted) Characteristic Symbol Min Typ Max Unit DC Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 65V, V GS = 0 V) Zero Gate Voltage Drain Leakage Current (V DS = 28 V, V GS = 0 V) Gate--Source Leakage Current (V GS = 10 V, V DS = 0 V) Gate Threshold Voltage (V DS = 28V, I D = 300 A) Gate Quiescent Voltage (V DD = 28 V, I D = 380 ma, Measured in Functional Test) IDSS 100 A IDSS 1 A IGSS 1 A VGS(th) 1.75 V VGS(Q) 1.8 2.8 3.8 V Functional Tests (In Innogration Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 380 ma, f =3500 MHz, Pulsed CW Signal Measurements. Pulse width: 100uS,duty cycle: 10% Power Gain Gp 13 db 1 db Compression Point P -1dB 40 W Drain Efficiency@P1dB D 43 45 % Input Return Loss IRL -10 db Load Mismatch (In Innogration Test Fixture, 50 ohm system): V DD = 28 Vdc, I DQ = 380 ma, f = 3500 MHz VSWR 10:1 at 8W WCDMA Output Power No Device Degradation TYPICAL CHARACTERISTICS Figure 1. Power gain and drain efficiency as function of average load power 2 / 5

Figure 2. Network analyzer plots (S11/S21) Figure 3. Photo of test fixture and BOM and layout 40 40 50 50 inputmatch outputmatch 3 / 5

Package Outline Earless Flanged ceramic package; 2 leads (A2) 4 / 5

Revision history Innogration (Suzhou) Co., Ltd. Table 5. Document revision history Date Revision Datasheet Status 2017/9/14 Rev 1.0 Preliminary Datasheet Creation Disclaimers Specifications are subject to change without notice. Innogration believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Innogration for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Innogration. Innogration makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Innogration in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Innogration products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Innogration product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For any concerns or questions related to terms or conditions, pls check with Innogration and authorized distributors Copyright by Innogration (Suzhou) Co.,Ltd. 5 / 5