Ultra Wide Band Low Noise Amplifier GHz. Electrical Specifications, TA = +25⁰C, With Vg= -5V, Vcc = +4V ~ +7V, 50 Ohm System

Similar documents
5W Ultra Wide Band Power Amplifier 2-18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units

4W Ultra Wide Band Power Amplifier 0.1GHz~22GHz

30W Solid State High Power Amplifier 2-6 GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units

8W Wide Band Power Amplifier 1GHz~22GHz

30W Wideband Solid State Power Amplifier 6-12GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

20W Solid State Power Amplifier 26.2GHz~34GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz.

100W Wide Band Power Amplifier 6GHz~18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz Gain db

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

DC-20 GHz Distributed Driver Amplifier. Parameter Min Typ Max Min Typ Max Units

Parameter Min. Typ. Max. Min. Typ. Max. Units

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

9W Power Amplifier 26.2GHz~34GHz

2W Ultra Wide Band Power Amplifier 0.2GHz~35GHz. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range

20W Solid State Power Amplifier 6-18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units

100W Power Amplifier 8GHz~11GHz

Parameter Min. Typ. Max. Min. Typ. Max. Units

Parameter Min. Typ. Max. Units. Frequency Range 8-11 GHz. Saturated Output Power (Psat) 52 dbm. Input Max Power (No Damage) Psat Gain dbm

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

dbm Supply Current (Idd) (Vdd=+36V)

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

150W Solid State Broadband EMC Benchtop Power Amplifier 6-18GHz. Parameter Min Typ Max Min Typ Max Units

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

Isolation db Input VSWR : 1 Output VSWR : 1 RF Input Power (Pulsed, 10% Duty Cycle, 20us pulse

Parameter Min Type Max Units Frequency Range GHz Small Signal Gain,S21 18 db. Input Return Loss,S11 10 db Output Return Loss,S22 7 db

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA. ABSORPTIVE 2-4 GHz 6 Bits 64dB PIN DIODE ATTENUATOR. Absorptive Pin Diode Attenuator 6 Bits 64dB 2-4GHz RFDAT0204G6A.

Features. Gain Variation Over Temperature db/ C

Features. = +25 C, +Vdc = +6V, -Vdc = -5V

Features. = +25 C, +Vdc = +6V, -Vdc = -5V

Features. = +25 C, Vdc = +7V

Features. The HMC-C072 is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT. = +25 C, Vdc = +7V

TGA2813-CP 3.1 to 3.6 GHz, 100W GaN Power Amplifier

TGA2214-CP 2 18 GHz 4 W GaN Power Amplifier

TGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier

Features. = +25 C, Vs= +8V to +16V

QPD W, 48 V GHz GaN RF Power Transistor. Product Description. Product Features. Functional Block Diagram.

TGA2625-CP GHz 20 W GaN Power Amplifier

TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier

TGS2355 SM EVB GHz 100 Watt GaN Switch. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information

QPD W, 48 V GHz GaN RF Power Transistor

TGA2622-CP 9 10 GHz 35 W GaN Power Amplifier

TGA2814-CP 3.1 to 3.6 GHz, 80W GaN Power Amplifier

TGM2635-CP X-Band 100 W GaN Power Amplifier

TGA2583-SM 2.7 to 3.7GHz, 10W GaN Power Amplifier

TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier

QPA GHz 50 Watt GaN Amplifier

QPA GHz 50 Watt GaN Amplifier

Features. = +25 C, Vdc = +5V

TGM2635-CP X-Band 100 W GaN Power Amplifier

TGA2567-SM 2 20 GHz LNA Amplifier

QPD0020S2. 35 W, 48 V, DC 6 GHz, GaN RF Power Transistor. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

Features. = +25 C, Vdd= 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz

TGA2594-HM GHz GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information

TGS SM GHz High Power SPDT Reflective Switch

TGA2612-SM 6 12 GHz GaN LNA

Features. = +25 C, Vdd= +12V, Vgg2= +5V, Idd= 400 ma*

TGF Watt Discrete Power GaN on SiC HEMT

QPM GHz Limiter/Low-Noise Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.

QPA1003P 1 8 GHz 10 W GaN Power Amplifier

TQP DC-6 GHz Gain Block

QPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty

QPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information. Part No.

Features. = +25 C, Vdd= 8V, Idd= 75 ma*

QPC1006EVB GHz High Power GaN SP3T Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

QPD W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

TGF2929-FL 100W, 28V, DC 3.5 GHz, GaN RF Power Transistor

Features. = +25 C, 50 Ohm System, Vcc= 5V

BROADBAND DISTRIBUTED AMPLIFIER

HMC659LC5 LINEAR & POWER AMPLIFIERS - SMT. GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz. Features. Typical Applications. General Description

Features = +5V. = +25 C, Vdd 1. = Vdd 2

QPA GHz Variable Gain Driver Amplifier

QPC GHz 50 W GaN SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

TGF Watt Discrete Power GaN on SiC HEMT

MMA R4 30KHz-50GHz Traveling Wave Amplifier Data Sheet October 2012

Main Features: ERZ-LNA Typical applications: Performance

Features. = +25 C, Vdd= 5V, Vgg2= Open, Idd= 60 ma*

QPM GHz Multi-Chip T/R Module

MMA051PP45 Datasheet. DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier

Transcription:

Ultra Wide Band Low Noise Amplifier 0.5 46GHz Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 0.5 20 20 46 GHz Gain 13 13 db Gain Variation Over Temperature (-45 ~ +85) ±3 ±2 db Noise Figure 3 3 Features Gain: 13dB Typical Noise Figure: 3.0dB P3dB Output Power: 18dBm Supply Voltage: -5V & +4V ~+7V Typical Applications Wireless Infrastructure Military & Aerospace Test and Measurement Fiber Optics Electrical Specifications, TA = +25⁰C, With Vg= -5V, Vcc = +4V ~ +7V, 50 Ohm System Input Return Loss 12 10 db Output Return Loss 15 10 db Output 1dB Compression Point (P1dB) 20 20 dbm Supply Current 200 350 200 350 ma Isolation S12 50 30 db Input Max Power (No damage) P1dB Gain P1dB Gain dbm Weight 35 g Impedance 50 Ohms Input / Output Connectors Finish Material 2.4 mm-female Gold Plated Aluminum / Copper * P1dB, P3dB and Psat power test signal: 200μs pulse width with 10% duty cycle. * For average CW power testing or increased duty cycle, a 5dB back off from Psat is required unless water/oil cooling system is applied.

Absolute Maximum Ratings Supply Voltage RF Input Power +10 VDC Psat Gain Note: Maximum RF input power is set to assure safety of amplifier. Input power may be increased at own risk to achieve full power of amplifier. Please reference gain and power curves. Environmental Specifications and Test Standards Parameter Standard Description Operational Temperature MIL-STD-39016 Biasing Up Procedure Connect input and output with 50 Ohm Step 1 source/load. (in band VSWR<1.9:1 or >10dB return loss) Step 2 Connect Ground Pin Step 3 Connect VDC Power OFF Procedure Step 1 Turn Off VDC Step 2 Remove RF Connection Step 3 Remove Ground -45 ~+55 (Case Temperature less than 85C) Storage Temperature -50 ~+125 Thermal Shock Random Vibration Electrical & Temperature Burn In Shock Altitude Hermetically Sealed (Optional) MIL-STD-883 1 Hour@ -45 1 Hour @ +85 (5 Cycles) Acceleration Spectral Density 6 (m/s) Total 92.6 RMS Temperature +85 for 72 Hours 1. Weight >20g, 50g half sine wave for 11ms, Speed variation 3.44m/s 2. Weight <=20g, 100g Half sine wave for 6ms, Speed variation 3.75m/s 3. Total 18 times (6 directions, 3 repetitions per direction). Standard: 30,000 Ft (Epoxy Sealed Controlled Environment) Optional: Hermetically Sealed (60,000 ft. 1.0 PSI min) MIL-STD-883 (For Hermetically Sealed Units) Note: The operating temperature for the unit is specified at the package base. It is the user s responsibility to ensure the part is in an environment capable of maintaining the temperature within the specified limits

Ordering Information Part No. RLNA05M46GA Description Ultra Wide Band Low Noise Amplifier 0.5-46GHz Amplifier Use Ensure that the amplifier input and output ports are safely terminated into a proper 50 ohm load before turning on the power. Never operate the amplifier without a load. A proper 50 ohm load is defined as a load with impedance less than 1.9:1 or return loss larger than 10dB relative to 50 Ohm within the specified operating band width. Power Supply Requirements Power supply must be able to provide adequate current for the amplifier. Power supply should be able to provide 1.5 times the typical current or 1.2 times the maximum current (whichever is greater). In most cases, RF - Lambda amplifiers will withstand severe mismatches without damage. However, operation with poor loads is discouraged. If prolonged operation with poor or unknown loads is expected, an external device such as an isolator or circulator should be used to protect the amplifier. Ensure that the power is off when connecting or disconnecting the input or output of the amp. Prevent overdriving the amplifier. Do not exceed the recommended input power level. Adequate heat-sinking required for RF amplifier modules. Please inquire. Amplifiers do not contain Thermal protection, Reverse DC polarity or Over voltage protection with the exception of a few models. Please inquire. Proper electrostatic discharge (ESD) precautions are recommended to avoid performance degradation or loss of functionality. What is not covered with warranty? Each RF - Lambda amplifier will go through power and temperature stress testing. Since the die, ICs or MMICs are fragile, these are not covered by warranty. Any damage to these will NOT be free to repair.

Wideband S-parameters Vcc = +4V Wideband S-parameters, Vcc = +7V

Typical Performance Plots: 500MHz to 20 GHz 2 nd Harmonic Wave vs. Output Power P2dB vs. frequency 3 rd Harmonic Wave vs. Output Power 4 th Harmonic Wave vs. Output Power

Typical Performance Plots 20 40GHz

Housing Outline: All Dimensions in mm [inch] 12.00mm [0.47''] 10.56mm [0.42''] 4.00mm [0.16''] 8.80mm [0.35''] 31.00mm [1.22''] ***Heat Sink required during operation*** GND 8.80mm [0.35''] 35.00mm [1.38''] 28.00mm [1.10''] 18.00mm [0.71''] 37.88mm [1.49''] +5V -5V 8.80mm [0.35''] Important Notice The information contained herein is believed to be reliable. RF-Lambda makes no warranties regarding the information contained herein. RF-Lambda assumes no responsibility or liability whatsoever for any of the information contained herein. RF-Lambda assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for RF-Lambda products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. RF-Lambda products are not warranted or authorized for use as critical components in medical, life-saving, or life sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.