900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features 4A, 900V, R DS(on) = 4.2Ω @ = 10 V Low gate charge ( typical 17nC) Low Crss ( typical 5.6 pf) Fast switching 100% avalanche tested Improved dv/dt capability QFET TM D! G D S TO-220 FQP Series G D S TO-220F FQPF Series G!! S Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter FQP4N90C FQPF4N90C Units S Drain-Source Voltage 900 V I D Drain Current - Continuous (T C = 25 C) 4 4 * A - Continuous (T C = 100 C) 2.3 2.3 * A I DM Drain Current - Pulsed (Note 1) 16 16 * A S Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 570 mj I AR Avalanche Current (Note 1) 4 A E AR Repetitive Avalanche Energy (Note 1) 14 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 C) 140 47 W - Derate above 25 C 1.12 0.38 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C Maximum lead temperature for soldering purposes, T L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics 300 C Symbol Parameter FQP4N90C FQPF4N90C Units R θjc Thermal Resistance, Junction-to-Case 0.89 2.66 C/W R θcs Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W R θja Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W
Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 250 µa 900 -- -- V BS Breakdown Voltage Temperature / T J Coefficient I D = 250 µa, Referenced to 25 C -- 1.05 -- V/ C I DSS = 900 V, = 0 V -- -- 10 µa Zero Gate Voltage Drain Current = 720 V, T C = 125 C -- -- 100 µa I GSSF Gate-Body Leakage Current, Forward = 30 V, = 0 V -- -- 100 na I GSSR Gate-Body Leakage Current, Reverse = -30 V, = 0 V -- -- -100 na On Characteristics (th) Gate Threshold Voltage =, I D = 250 µa 3.0 -- 5.0 V R DS(on) Static Drain-Source V On-Resistance GS = 10 V, I D = 2 A -- 3.5 4.2 Ω g FS Forward Transconductance = 50 V, I D = 2 A (Note 4) -- 5 -- S Dynamic Characteristics C iss Input Capacitance = 25 V, = 0 V, -- 740 960 pf C oss Output Capacitance f = 1.0 MHz -- 65 85 pf C rss Reverse Transfer Capacitance -- 5.6 7.3 pf Switching Characteristics t d(on) Turn-On Delay Time -- 25 60 ns V DD = 450 V, I D = 4 A, t r Turn-On Rise Time R G = 25 Ω -- 50 110 ns t d(off) Turn-Off Delay Time -- 40 90 ns t f Turn-Off Fall Time (Note 4, 5) -- 35 80 ns Q g Total Gate Charge = 720 V, I D = 4 A, -- 17 22 nc Q gs Gate-Source Charge = 10 V -- 4.5 -- nc Q gd Gate-Drain Charge (Note 4, 5) -- 7.5 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 4 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 16 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 4 A -- -- 1.4 V t rr Reverse Recovery Time = 0 V, I S = 4 A, -- 450 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) -- 3.5 -- µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 67 mh, I AS = 4A, V DD = 50V, R G = 25 Ω, Starting T J = 25 C 3. I SD 4A, di/dt 200A/µs, V DD BS, Starting T J = 25 C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
Typical Characteristics I D, Drain Current [A] 10 1 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10-2 10 1, Drain-Source Voltage [V] 1. 250μ s Pulse Test 2. T C = 25 I D, Drain Current [A] 10 1 25 o C 150 o C -55 o C 1. = 50V 2. 250μ s Pulse Test 2 4 6 8 10, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 10 1 8 R DS(ON) [Ω ], Drain-Source On-Resistance 6 4 2 = 10V = 20V Note : T J = 25 I DR, Reverse Drain Current [A] 150 25 1. = 0V 2. 250μ s Pulse Test 0 2 4 6 8 I D, Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V SD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 1200 1000 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 12 10 = 180V = 450V Capacitance [pf] 800 600 400 200 C iss C oss C rss 0 10 1, Drain-Source Voltage [V] Notes ; 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] 8 6 4 2 = 720V Note : I D = 4A 0 0 5 10 15 20 Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Typical Characteristics (Continued) BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 1. = 0 V 2. I D = 250 μ A R DS(ON), (Normalized) Drain-Source On-Resistance 3.0 2.5 2.0 1.5 1.0 0.5 1. = 10 V 2. I D = 2.0 A 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 10 2 Operation in This Area is Limited by R DS(on) 10 2 Operation in This Area is Limited by R DS(on) 10 µs I D, Drain Current [A] 10 1 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 100 µs 1 ms 10 ms 100 ms DC I D, Drain Current [A] 10 1 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 100 ms DC 10 ms 100 µs 1 ms 10-2 10 1 10 2 10 3, Drain-Source Voltage [V] 10-2 10 1 10 2 10 3, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FQP4N90C Figure 9-2. Maximum Safe Operating Area for FQPF4N90C 5 4 I D, Drain Current [A] 3 2 1 0 25 50 75 100 125 150 T C, Case Temperature [ ] Figure 10. Maximum Drain Current vs Case Temperature
Typical Characteristics (Continued) Z θ JC (t), Therm al R esponse 10-2 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse N otes : 1. Z θ JC (t) = 0.89 /W M ax. 2. D uty F actor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t 2 10-5 10-4 10-3 10-2 10 1 t 1, Square W ave Pulse Duration [sec] Figure 11-1. Transient Thermal Response Curve for FQP4N90C Z θ JC (t), Therm al Response 10-2 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse N otes : 1. Z θ JC (t) = 2.66 /W M ax. 2. D uty Factor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t 2 10-5 10-4 10-3 10-2 10 1 t 1, Square W ave Pulse D uration [sec] Figure 11-2. Transient Thermal Response Curve for FQPF4N90C
12V 200nF 50KΩ 300nF Gate Charge Test Circuit & Waveform Same Type as DUT 10V Q gs Q g Q gd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms R L 90% R G V DD 10V DUT 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- LI 2 2 AS BS -------------------- BS -V DD I D BS I AS R G V DD I D (t) 10V DUT V DD (t) t p t p Time
Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + _ I SD L Driver R G Same Type as DUT V DD dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop
Package Dimensions (1.70) 1.30 ±0.10 9.90 ±0.20 (8.70) ø3.60 ±0.10 TO-220 2.80 ±0.10 4.50 ±0.20 1.30 +0.10 0.05 9.20 ±0.20 13.08 ±0.20 (1.46) (1.00) 1.27 ±0.10 (45 ) (3.00) (3.70) 1.52 ±0.10 15.90 ±0.20 10.08 ±0.30 18.95MAX. 2.54TYP [2.54 ±0.20] 0.80 ±0.10 2.54TYP [2.54 ±0.20] 0.50 +0.10 0.05 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters
Package Dimensions (Continued) 3.30 ±0.10 TO-220F 10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20 (7.00) (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45 ) 15.87 ±0.20 9.75 ±0.30 MAX1.47 0.80 ±0.10 (30 ) 0.35 ±0.10 #1 0.50 +0.10 0.05 2.76 ±0.20 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 Dimensions in Millimeters
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