FQP34N20L FQP34N20L 200V LOGIC N-Channel MOSFET June 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control. Features 31A, 200V, R DS(on) = 0.075Ω @ = 10 V Low gate charge ( typical 55 nc) Low Crss ( typical 52 pf) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logic drivers D! G D S TO-220 FQP Series G "! " "! "! S Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter FQP34N20L Units S Drain-Source Voltage 200 V I D Drain Current - Continuous (T C = 25 C) 31 A - Continuous (T C = 100 C) 20 A I DM Drain Current - Pulsed (Note 1) 124 A S Gate-Source Voltage ± 20 V E AS Single Pulsed Avalanche Energy (Note 2) 640 mj I AR Avalanche Current (Note 1) 31 A E AR Repetitive Avalanche Energy (Note 1) 18 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P D Power Dissipation (T C = 25 C) 180 W - Derate above 25 C 1.43 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 C Thermal Characteristics Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction-to-Case -- 0.7 C/W R θcs Thermal Resistance, Case-to-Sink 0.5 -- C/W R θja Thermal Resistance, Junction-to-Ambient -- 62.5 C/W
Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 250 µa 200 -- -- V BS Breakdown Voltage Temperature / T J Coefficient I D = 250 µa, Referenced to 25 C -- 0.16 -- V/ C I DSS = 200 V, = 0 V -- -- 1 µa Zero Gate Voltage Drain Current = 160 V, T C = 125 C -- -- 10 µa I GSSF Gate-Body Leakage Current, Forward = 20 V, = 0 V -- -- 100 na I GSSR Gate-Body Leakage Current, Reverse = -20 V, = 0 V -- -- -100 na FQP34N20L On Characteristics (th) Gate Threshold Voltage =, I D = 250 µa 1.0 -- 2.0 V R DS(on) Static Drain-Source On-Resistance = 10 V, I D = 15.5 A = 5 V, I D = 15.5 A g FS Forward Transconductance = 30 V, I D = 15.5 A (Note 4) -- 41 -- S -- 0.057 0.060 0.075 0.080 Ω Dynamic Characteristics C iss Input Capacitance = 25 V, = 0 V, -- 3000 3900 pf C oss Output Capacitance f = 1.0 MHz -- 400 520 pf C rss Reverse Transfer Capacitance -- 52 67 pf Switching Characteristics t d(on) Turn-On Delay Time -- 45 100 ns = 100 V, I D = 34 A, t r Turn-On Rise Time R G = 25 Ω -- 520 1050 ns t d(off) Turn-Off Delay Time -- 170 350 ns t f Turn-Off Fall Time (Note 4, 5) -- 370 750 ns Q g Total Gate Charge = 160 V, I D = 34 A, -- 55 72 nc Q gs Gate-Source Charge = 5 V -- 9.9 -- nc Q gd Gate-Drain Charge (Note 4, 5) -- 27 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 31 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 124 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 31 A -- -- 1.5 V t rr Reverse Recovery Time = 0 V, I S = 34 A, -- 205 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) -- 1.1 -- µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.0mH, I AS = 31A, = 50V, R G = 25 Ω, Starting T J = 25 C 3. I SD 34A, di/dt 300A/µs, BS, Starting T J = 25 C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
FQP34N20L Typical Characteristics I D, Drain Current [A] 10 2 Top : 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V 10 1 1. 250μs Pulse Test 2. T C = 25 I D, Drain Current [A] 10 2 10 1 150 25-55 1. = 30V 2. 250μs Pulse Test 10-1 10 1, Drain-Source Voltage [V] 10-1 0 2 4 6 8 10, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.25 10 2 0.20 R DS(ON) [Ω ], Drain-Source On-Resistance 0.15 0.10 0.05 = 5V = 10V Note : T J = 25 0.00 0 30 60 90 120 I D, Drain Current [A] I DR, Reverse Drain Current [A] 10 1 150 25 1. = 0V 2. 250μs Pulse Test 10-1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V SD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 7000 6300 5600 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 12 10 = 40V Capacitance [pf] 4900 4200 3500 2800 2100 1400 700 C iss C oss C rss 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] 8 6 4 2 = 100V = 160V Note : I D = 34 A 0 10-1 10 1, Drain-Source Voltage [V] 0 0 20 40 60 80 100 120 Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Typical Characteristics (Continued) BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] 1. = 0 V 2. I D = 250 μa R DS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] 1. = 10 V 2. I D = 17 A FQP34N20L Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature I D, Drain Current [A] 10 2 10 1 Operation in This Area is Limited by R DS(on) 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse DC 10 ms 1 ms 100 µs 10-1 10 1 10 2, Drain-Source Voltage [V] I D, Drain Current [A] 35 30 25 20 15 10 5 0 25 50 75 100 125 150 T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z θ JC (t), Therm al Response 10-1 10-2 D=0.5 0.2 0.1 0.05 0.02 0.01 sin g le p u lse N o tes : 1. Z θ JC (t) = 0.7 /W M a x. 2. D uty F actor, D = t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t 2 10-5 10-4 10-3 10-2 10-1 10 1 t 1, S quare W ave P ulse D uration [sec] Figure 11. Transient Thermal Response Curve
FQP34N20L Gate Charge Test Circuit & Waveform 12V 200nF 50KΩ 300nF Same Type as DUT 5V Q g Q gs Q gd 3mA DUT Charge Resistive Switching Test Circuit & Waveforms R L 90% R G 5V DUT 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- LI 2 2 AS BS -------------------- BS - I D BS I AS R G I D (t) 10V DUT (t) t p t p Time
Peak Diode Recovery dv/dt Test Circuit & Waveforms FQP34N20L DUT + _ I SD L Driver R G Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop
FQP34N20L Package Dimensions TO-220 9.90 ±0.20 4.50 ±0.20 (1.70) 1.30 ±0.10 (8.70) ø3.60 ±0.10 2.80 ±0.10 1.30 +0.10 0.05 9.20 ±0.20 13.08 ±0.20 (1.46) (1.00) 1.27 ±0.10 (45 ) (3.00) (3.70) 1.52 ±0.10 15.90 ±0.20 10.08 ±0.30 18.95MAX. 2.54TYP [2.54 ±0.20] 0.80 ±0.10 2.54TYP [2.54 ±0.20] 0.50 +0.10 0.05 2.40 ±0.20 10.00 ±0.20
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DOME E 2 CMOS TM EnSigna TM FACT FACT Quiet Series FAST DISCLAIMER LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR POP PowerTrench QFET QS QT Optoelectronics Quiet Series SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1