TriQuint SCM6M7010 WiMAX Dual-Band WiFi Front-End Module TriQuint TQPED 0.5 µm E-D phemt Process

Similar documents
Akustica AKU2000 MEMS Microphone. MEMS Process Review

MemsTech MSM3C-S4045 Integrated Silicon Microphone with Supplementary TEM Analysis

Texas Instruments BRF6350B Bluetooth Link Controller UMC 90 nm RF CMOS

Freescale MCIMX357DVM5B 90 nm Multimedia Application Processor

Analog Devices AD7658 Analog to Digital Converter icmos Process Technology Process Review

Volterra VT1115MF PWM Controller Chip

LSI Logic LSI53C1030 PCI-X to Dual Channel Ultra320 SCSI Controller 0.18 µm CMOS Process

InvenSense ITG-3200 Three-Axis Digital Output Yaw, Pitch, and Roll Gyroscope

Oki 2BM6143 Microcontroller Unit Extracted from Casio GW2500 Watch 0.25 µm CMOS Process

Panasonic DMC-GH Mp, 4.4 µm Pixel Size LiveMOS Image Sensor from Panasonic LUMIX DMC-GH1 Micro Four Thirds Digital Interchangeable Lens Camera

AuthenTec AES1710 Secure Slide Fingerprint Sensor

Microsoft X02046 IBM PowerPC Processor from the XBOX 360 Structural Analysis

Sony IMX Megapixel, 1.4 µm Pixel 1/3.2 Optical Format CMOS Image Sensor

Microchip PIC18F4320-I/ML Enhanced Flash Microcontroller Structural Analysis

PowerDsine/Freescale

Texas Instruments THS7530PWP Gain Amplifier Structural Analysis

Powerchip Semiconductor Corporation A3R12E3GEF G6E 635BLC4M 512 Megabit DDR2 SDRAM Structural Analysis

Analog Devices ADMP403 MEMS Microphone

FLIR Systems Indigo ISC0601B from Extech i5 Infrared Camera

MEMSIC MMC3120M Tri-Axis Magnetic Sensor

Texas Instruments ISO7220A Capacitor Type Digital Isolator

Samsung S5K3BAFB 2 Megapixel CMOS Image Sensor 0.13 µm Copper CMOS Process Process Review Report

Peregrine Semiconductor PE4268 SP6T RF UltraCMOS TM Switch Structural Analysis

Sony IMX018 CMOS Image Sensor Imager Process Review

NVE IL715-3E GMR Type Digital Isolator (30457J Die Markings) 0.50 µm CMOS Process

Qualcomm QFE1100 Envelope Tracking PA Power Supply

MagnaChip MC511DB 1.3 Megapixel CMOS Image Sensor 0.18 µm Process

SiTime SIT8002AC-13-18E50 One Time Programmable Oscillator

Texas Instruments Sitara XAM3715CBC Application Processor 45 nm UMC Low Power Process

Texas Instruments TXS0108EZXYR 8 Bit Bidirectional Voltage-Level Translator

nvidia GeForce FX 5700 Ultra (NV36) Graphics Processor Structural Analysis

Intel Xeon E3-1230V2 CPU Ivy Bridge Tri-Gate 22 nm Process

CMOSIS CMV Mp, 5.5 µm Pixel Pitch High-Speed Pipelined Global Shutter CMOS Image Sensor with Correlated Double Sampling

Nikon 12.1 Mp CMOS Image Sensor from a D3s DSLR Camera with NC81361A Die Markings

Sharp NC Megapixel CCD Imager Process Review

Spansion S29GL512N11TAI Mbit MirrorBit TM Flash Memory Structural Analysis

Texas Instruments/Apple 343S0538 Touch Screen Controller with F Die Markings

Micron MT9T Megapixel, ¼ Optical Format, 1.75 µm Pixel Size System-on-Chip (SOC) CMOS Image Sensor

Intel Q3GM ES 32 nm CPU (from Core i5 660)

Marvell 88E6046-TAH1 Four Port Fast Ethernet Plus Two Port Gigabit Ethernet Switch

Rockchip RK3188 Mobile Application Processor GF 28 nm SLP Gate First HKMG CMOS Process

Olympus EVOLT E-410/Matsushita LiveMOS Image Sensor

AMD ATI TSMC 28 nm Gate Last HKMG CMOS Process

FocalTech FT5206GE1 Capacitive Touch Screen Controller IC

Bosch Sensortec BMP180 Pressure Sensor

Altera 5SGXEA7K2F40C2ES Stratix V TSMC 28 nm HP Gate Last HKMG CMOS Process

Nanya elixir N2TU51280AF-37B 512 Mbit DDR2 SDRAM Structural Analysis

Broadcom BCM43224KMLG Baseband/MAC/Radio All-in-One Die SMIC 65 nm Process

MediaTek MT6167A Smartphone Radio Frequency (RF) Transceiver

IBM POWER7 Server 46J6702 IBM 45 nm Dual Stress Liner SOI CMOS Process with edram

Apple/Dialog Semiconductor 343S0622-A1/D2018A WLED Driver

Marvell I1062-B0 Hard Drive Controller SoC

Qualcomm MSM8260A Snapdragon S4 Dual-Core System-on-Chip (SoC) Mobile Applications Processor

Motorola MPXV5004G Integrated Pressure Sensor Structural Analysis

RDA Microelectronics RDA8851A GSM/GPRS Baseband SoC

Sony IMX128AQP 24.3 Mp 5.9 µm Pixel Pitch CMOS Image Sensor from Nikon D600. Module 1: Overview Analysis

Samsung SDP1301 DTV SERDES Interface

OmniVision OV2640 1/4-Inch 2 Megapixel CMOS Image Sensor (OV253AI Die Markings) TSMC 0.13 µm Process

FUJIFILM MS3897A CCD Image Sensor Imager Process Review

Matrix Semiconductor One Time Programmable Memory

Samsung K4H510838C-UCCC 512Mbit DDR SDRAM Structural Analysis

Freescale MCIMX535DVV1C i.mx535 Mobile Applications Processor

Motorola PRF5P21240 RF Power MOSFET Structural Analysis

Freescale MCIMX6Q5EYM10AC (i.mx6q) Integrated Multimedia Applications Processor

u-blox M8030-KT Concurrent Multi-GNSS Receiver

Marvell Avastar 88W ac Wi-Fi 2x2 MIMO Combo Chip

STMicroelectronics LIS3L02AE 3-Axis Accelerometer. MEMS Process Review

FocalTech Systems FT5336GQQ and FT5436iGQQ (FS-123ATPBC Die) Capacitive Touch Screen Controller

InvenSense IDG-300 Dual-Axis Angular Rate Gyroscope Sensor

Apple/Cirrus Logic 338S1081/46L01 Multi-Standard Audio Decoder

Nikon NC81369R 24.2 Mp, 3.8 µm Pixel Size, APS-C Format CMOS Image Sensor from the Nikon D3200. Module 1: Overview Analysis

STMicroelectronics STMT05 S-Touch Capacitive Touch Screen Controller

Samsung K9G8G08U0M-PCB0 8 Gbit MLC NAND Flash Structural Analysis

FocalTech FT5316 Touch Screen Controller

Foveon FX17-78-F13D Mp, 7.8 µm Pixel Size CIS from Sigma DP1 Compact Digital Camera 0.18 µm Dongbu Process

Apple A5 APL0498 (APL0498E01 Die Markings) Mobile Processor Extracted from the ipad 2

1.3 Megapixel CMOS Image Sensor Process Review (including MN101E19A Signal Processing DSP Basic Device Analysis)

Silicon Storage Technology SST39VF800A 8 Mbit Multi-Purpose Flash Memory Structural Analysis

Fullhan FH8520 Image Signal Processor

Micron MT66R7072A10AB5ZZW 1 Gbit Phase Change Memory 45 nm BiCMOS PCM Process

Intel T2300 (Yonah 65 nm node) 1.66 GHz Dual Core Laptop Microprocessor Transistor Characterization Report

MediaTek MT3333AV (BT10085B Die) Satellite Receiver SoC

Qualcomm MDM9235M 4G LTE Advanced Modem

Intel Q3GM ES 32 nm CPU (from Core i5 660)

Qualcomm Atheros AR8035 Ultra Low Power Single RGMII Gigabit Ethernet PHY

Samsung K9F2G08U0M-YCB0 2Gbit NAND Flash Device Structural Analysis

Samsung K4B1G0846F-HCF8 1 Gbit DDR3 SDRAM 48 nm CMOS DRAM Process

Qualcomm APQ8084 Snapdragon 805 Application Processor

Sony IMX118CQT 18.5 Mp, 1.25 µm Pixel Pitch Back Illuminated CIS from the Sony DSC-WX100 Camera

Texas Instruments WL1283C WiLink 7.0 Single Chip WLAN, GPS, Bluetooth, and FM Transceiver

Toshiba TH58NVG2S3BTG00 4 Gbit NAND Flash Structural Analysis

Intel Xeon E3-1230V2 22 nm Tri-Gate Microprocessor

Samsung K9HAG08U1M-PCB0 16 Gbit MLC NAND Flash Structural Analysis Report

Intel D920 (Presler 65 nm node) 2.8 GHz Dual Core Microprocessor

Altera APEX EP20K600CB652C8ES Programmable Logic Device Structural Analysis

Nikon NC81369R 24.2 Mp, 3.8 µm Pixel Size, APS-C Format CMOS Image Sensor from the Nikon D3200. Module 5: Substrate Dopant Analysis

AKM AK8973 and AK Axis Electronic Compass

Qualcomm MSM8926 Snapdragon 400 Application Processor

Nikon NC81369R 24.2 Mp, 3.8 µm Pixel Size, APS-C Format CMOS Image Sensor from the Nikon D3200. Module 4: Pixel Cross-Sectional Analysis

Elpida Memory Inc. B240ABB (die markings), MC77-LL/A (package markings) 46 nm Mobile / Low Power DDR2 SDRAM

Transcription:

TriQuint SCM6M7010 WiMAX Dual-Band WiFi Front-End Module TriQuint TQPED 0.5 µm E-D phemt Process Process Review For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor technology, please call Sales at Chipworks. 3685 Richmond Road, Suite 500, Ottawa, ON K2H 5B7, Canada Tel: 613.829.0414 Fax: 613.829.0515 www.chipworks.com

Process Review Table of Contents 1 Overview 1.1 List of Figures 1.2 List of Tables 1.3 Company Profile 1.4 Introduction 1.5 Device Summary 1.6 Process Summary 2 Device Overview 2.1 Downstream Product 2.2 Package and Die 3 Package Analysis 3.1 Package 4 Process 4.1 General Structure 4.2 Bond Pads 4.3 Dielectrics 4.4 Routing Metals 4.5 Vias and Contacts 4.6 Epi and Substrate 4.7 Capacitors 4.8 Resistors 4.9 Inductors 4.10 ESD Diodes 4.11 Through Die Via 4.12 Transistors 4.13 Undetermined Devices 5 Critical Dimensions 5.1 Package and Die 5.2 Vertical Dimensions 5.3 Horizontal Dimensions 6 References 7 Statement of Measurement Uncertainty and Scope Variation Report Evaluation

Overview 1-1 1 Overview 1.1 List of Figures 2 Device Overview 2.1.1 Intel WiMAX/WiFi Card Top View 2.1.2 Intel WiMAX/WiFi Board Top View 2.1.3 Intel WiMAX/WiFi Board Bottom View 2.2.1 Package Photograph Top View 2.2.2 Package Photograph Bottom View 2.2.3 Inside Package Plan View 2.2.4 Package X-Ray Plan View 2.2.5 Package X-Ray Detailed Plan View 2.2.6 Die Photograph 2.2.7 Die Markings 2.2.8 Die Photograph Delayered to Metal 1 2.2.9 Annotated Die Photograph 2.2.10 Die Bottom Left Corner 2.2.11 Die Top Right Corner 2.2.12 Minimum Pitch Bond Pads 2.2.13 Bond Pad 2.2.14 TDV Pad 3 Package Analysis 3.1.1 SCM6M7010 Package Cross Section 3.1.2 PWB and Die Cross Section SEM 3.1.3 PWB and Die Cross Section Optical 3.1.4 Stitch Bond 3.1.5 Solder Ball 3.1.6 Edge of Solder Ball Detail 3.1.7 Die Bond 3.1.8 Diplexer 3.1.9 SMT Capacitor 4 Process 4.1.1 General Structure 4.1.2 Die Edge and Seal Tilt View 4.1.3 Die Edge 4.1.4 Die Edge Seal Along its Length Optical 4.1.5 Left Die Edge Seal Along its Length SEM 4.1.6 Die Edge Seal Detail Length Direction 4.1.7 Right Die Edge Seal Width Direction 4.2.1 Bond Pad Optical 4.2.2 Bond Pad SEM 4.2.3 Left Edge of Bond Pad

Overview 1-2 4.3.1 Dielectrics General Structure 4.3.2 ILD 0 Detail SEM 4.3.3 ILD 0 Detail TEM 4.3.4 PMD Detail 4.4.1 Minimum Pitch Metal 2 4.4.2 Metal 2 4.4.3 Minimum Pitch Metal 1 4.4.4 Metal 1 4.4.5 Minimum Pitch Metal 0 Optical 4.4.6 Minimum Pitch Metal 0 SEM 4.4.7 MIM Metal and Metal 0 4.5.1 Minimum Pitch Via 1 4.5.2 Minimum Pitch Via 0 Contacting M0 4.5.3 Minimum Pitch Via 0 Contacting MIM Metal 4.5.4 Minimum Pitch Schottky Contacts 4.5.5 Schottky Contact 4.5.6 Minimum Pitch Ohmic Contacts and Contacted Gates 4.5.7 Ohmic Contact SEM 4.5.8 Ohmic Contact Detail TEM 4.5.9 Minimum Pitch Gate 4.6.1 Cross-Sectional Epi Layer Block Diagram 4.6.2 Epi Stack SEM 4.6.3 GaAs Substrate Orientation 45 Cleave 4.6.4 Epi Stack TEM 4.7.1 MIM Capacitors Plan View 4.7.2 MIM Capacitor Cross-Sectional Overview 4.7.3 Contact to MIM Capacitor Top Plate 4.7.4 MIM Capacitor Detail SEM 4.7.5 MIM Capacitor Detail TEM 4.8.1 NiCr Resistors Plan View 4.8.2 NiCr Resistors Plan View Delayered to Metal 1 4.8.3 NiCr Resistors Cross Section SEM 4.8.4 NiCr Resistor Cross Section TEM 4.8.5 NiCr Resistor Detail 4.8.6 NiCr Resistor Edge 4.8.7 Epi Resistor Plan View 4.8.8 Epi Resistor Tilt View 4.9.1 Inductor with Narrow Coil 4.9.2 Inductor with Broader Coil 4.9.3 Type A Coil Inductor Cross Section Overview 4.9.4 Type B Coil Inductor Cross Section Overview 4.9.5 Type B Coil Inductor Cross Section Detail

Overview 1-3 4.10.1 ESD Diode Plan View Delayered to Metal 1 4.10.2 ESD Diode Cross Section Overview 4.10.3 ESD Diode Cross Section Detail 4.10.4 ESD Diode Schottky Contact Detail 4.10.5 ESD Diode Cross Section Longer Ohmic to Schottky Contact Separation 4.11.1 Through Die Via Optical 4.11.2 Through Die Via SEM 4.11.3 Through Die Via Top 4.11.4 Through Die Via Bottom 4.11.5 TDV Connected to MIM Capacitor 4.11.6 TDV Detail Optical 4.11.7 TDV Top Detail TEM 4.11.8 TDV Top Edge and Ohmic Contact TEM 4.11.9 TDV Ohmic Contact Detail 4.12.1 E-Mode FETs (FET 1) Delayered to Metal 1 Optical Plan View 4.12.2 E-Mode FETs (FET 1) Delayered to Metal 1 SEM Plan View 4.12.3 Metal Gate Edge of E-Mode FET (FET 1) Detail SEM Plan View 4.12.4 E-Mode FET (FET 1) Cross Section SEM 4.12.5 E-Mode FET (FET 1) Cross Section TEM 4.12.6 E-Mode FET (FET 1) Source/Drain Contact TEM 4.12.7 Single E-Mode FET (FET 1) TEM 4.12.8 E-Mode FET (FET 1) Metal Gate TEM 4.12.9 E-Mode FET (FET 1) Metal Gate Detail TEM 4.12.10 E-Mode FET (FET 1) Metal Gate Pt/AlGaAs Schottky Layer Interface 4.12.11 SCM of E-Mode FET 4.12.12 Trigate D-Mode FETs With Slot S/D Contacts 4.12.13 Trigate D-Mode FETs with Slot S/D Contacts Delayered to Metal 1 SEM Plan View 4.12.14 Trigate D-Mode FETs with Slot S/D Contacts Delayered to Metal 1 Tilt View 4.12.15 SEM Cross Section of Trigate D-Mode FET with Slot S/D Contacts 4.12.16 Single D-Mode Gate (with Slot S/D Contacts) Detail 4.12.17 Trigate D-Mode FETs (FET 2) with Point S/D Contacts Plan View 4.12.18 D-Mode FETs (FET 2) with Point S/D Contacts Delayered to Metal 1 Plan View 4.12.19 Trigate D-Mode FETs with Slot S/D Contacts Delayered to Metal 1 Tilt View 4.12.20 D-Mode FET Metal Gate Overview TEM 4.12.21 D-Mode FET Metal Gate Detail 1 TEM 4.12.22 D-Mode FET Metal Gate Detail 2 TEM 4.13.1 Undetermined Three Terminal Device 4.13.2 Dual Gate Structure Detailed Tilt View 4.13.3 FET with Gate Shorted to One Terminal 4.13.4 Wide and Narrow Striped Structures

Overview 1-4 1.2 List of Tables 1 Overview 1.5.1 Device Summary 1.6.1 Summary of Major Findings 2 Device Overview 2.2.1 Package and Die Dimensions 4 Process 4.3.1 Dielectric Composition and Thicknesses 4.4.1 Metallization Composition and Thicknesses 4.4.2 Minimum Metals Horizontal Dimensions 4.5.1 Via and Contact Horizontal Dimensions 4.6.1 Epi and Die Vertical Dimensions 4.6.2 Desired Epi Layer Composition 5 Critical Dimensions 5.1.1 Package and Die Dimensions 5.2.1 Dielectric Composition and Thicknesses 5.2.2 Metallization Composition and Thicknesses 5.2.3 Epi, and Die Vertical Dimensions 5.3.1 Minimum Metals Horizontal Dimensions 5.3.2 Via and Contact Horizontal Dimensions

About Chipworks Chipworks is the recognized leader in reverse engineering and patent infringement analysis of semiconductors and electronic systems. The company s ability to analyze the circuitry and physical composition of these systems makes them a key partner in the success of the world s largest semiconductor and microelectronics companies. Intellectual property groups and their legal counsel trust Chipworks for success in patent licensing and litigation earning hundreds of millions of dollars in patent licenses, and saving as much in royalty payments. Research & Development and Product Management rely on Chipworks for success in new product design and launch, saving hundreds of millions of dollars in design, and earning even more through superior product design and faster launches. Contact Chipworks To find out more information on this report, or any other reports in our library, please contact Chipworks at: Chipworks 3685 Richmond Rd. Suite 500 Ottawa, Ontario K2H 5B7 Canada T: 1.613.829.0414 F: 1.613.829.0515 Web site: www.chipworks.com Email: info@chipworks.com Please send any feedback to feedback@chipworks.com