N-Channel 2-V (D-S) 75 C MOSFET SUM6N2-3m9P PRODUCT SUMMRY V (BR)DSS (V) r DS(on) (Ω) I D () a.39 at V GS = V 6 2.52 at V GS = 4.5 V 6 FETURES TrenchFET Power MOSFET 75 C Junction Temperature % R g Tested % UIS Tested PPLICTIONS OR-ing RoHS COMPLINT D T O-263 G DRIN connected to T B G D S T op V i e w Ordering Information: SUM6N2-3m9P-E3 (Lead (Pb)-free) S N-Channel MOSFET BSOLUTE MXIMUM RTINGS T = 25 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS 2 V Gate-Source Voltage V GS ± 2 T C = 25 C 6 a Continuous Drain Current (T J = 75 C) I D T C = C 6 a Pulsed Drain Current I DM 2 Single Pulse valanche Current I S 5 L =. mh Single Pulse valanche Energy E S 25 mj T C = 25 C Maximum Power Dissipation b 2 c P D W T = 25 C d 3.75 Operating Junction and Storage Temperature Range T J, T stg - 55 to 75 C THERML RESISTNCE RTINGS Parameter Symbol Limit Unit Junction-to-mbient (PCB Mount) d R thj 4 C/W Junction-to-Case R thjc.25 Notes: a. Package limited. b. Duty cycle %. c. See SO curve for voltage derating. d. When mounted on " square PCB (FR-4 material). Document Number: 6982 S-883-Rev., 4-Feb-8
SUM6N2-3m9P SPECIFICTIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V (BR)DSS V DS = V, I D = 25 µ 2 V Gate-Threshold Voltage V GS(th) V DS = V GS, I D = 25 µ. 3 Gate-Body Leakage I GSS V DS = V, V GS = ± 2 V ± n Zero Gate Voltage Drain Current I DSS V DS = 2 V, V GS = V, T J = 25 C 5 µ V DS = 2 V, V GS = V V DS = 2 V, V GS = V, T J = 75 C 25 On-State Drain Current a I D(on) V DS 5 V, V GS = V Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 % b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. V GS = V, I D = 2.3.39 V Drain-Source On-State Resistance a GS = V, I D = 2, T J = 25 C.59 r DS(on) Ω V GS = V, I D = 2, T J = 75 C.7 V GS = 4.5 V, I D = 2.42.52 Forward Transconductance a g fs V DS = V, I D = 2 95 S Dynamic b Total Gate Charge b Q g Input Capacitance C iss 595 Output Capacitance C oss V GS = V, V DS = V, f = MHz 985 pf Reverse Transfer Capacitance C rss 365 33 5 Gate-Source Charge b Q gs V DS = V, V GS = 4.5 V, I D = 5 8 nc Gate-Drain Charge b Q gd 7 Gate Resistance R g.75.5 2.3 Ω Turn-On Delay Time b t d(on) 5 25 Rise Time b t r V DD = V, R L =.2 Ω 7 Turn-Off Delay Time b t d(off) I D 5, V GEN = V, R g =. Ω 35 55 ns Fall Time b t f 8 2 Source-Drain Diode Ratings and Characteristics T C = 25 C c Continuous Current I S 6 Pulsed Current I SM Forward Voltage a V SD I F = 2, V GS = V.85.5 V Reverse Recovery Time t rr 45 9 ns Peak Reverse Recovery Current I RM I F = 2, di/dt = /µs.7 3.4 Reverse Recovery Charge Q rr.39.55 µc Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Document Number: 6982 S-883-Rev., 4-Feb-8
SUM6N2-3m9P TYPICL CHRCTERISTICS 25 C, unless otherwise noted 2 V GS =thru 5 V V GS =4V 2 I D - Drain Current () 8 6 4 I D - Drain Current () 8 6 4 T C =25 C 2 V GS =3V 2 3 4 5 V DS - Drain-to-Source Voltage (V) Output Characteristics 2 T C = 25 C T C = - 55 C 2 3 4 5 V GS - Gate-to-Source Voltage (V) Transfer Characteristics 2. - Transconductance (S) g fs 6 2 8 4 T C = 25 C T C = -55 C T C = 25 C - On-Resistance (Ω) r DS(on).8.6.4.2 V GS =4.5V V GS =V 2 3 4 5 I D - Drain Current () Transconductance. 2 4 6 8 I D - Drain Current () On-Resistance vs. Drain Current.2 75 I D =2 C iss.6 6 - On-Resistance (Ω) r DS(on).2.8.4 T = 25 C C - Capacitance (pf) 45 3 5 C oss T = 25 C. 2 4 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage C rss 2 4 6 8 2 4 6 8 2 V DS - Drain-to-Source Voltage (V) Capacitance Document Number: 6982 S-883-Rev., 4-Feb-8 3
SUM6N2-3m9P TYPICL CHRCTERISTICS 25 C, unless otherwise noted 2. - Gate-to-Source Voltage (V) 8 6 4 I D =5 V DS =V V DS = 6 V r DS(on) - On-Resistance (Normalized).7.4. I D =2 V GS =V V GS =4.5V V GS 2.8 2 4 6 8 Q g - Total Gate Charge (nc) Gate Charge.5-5 - 25 25 5 75 25 5 75 T J -Junction Temperature ( C) On-Resistance vs. Junction Temperature.5 T J = 5 C. - Source Current () I S.. T J = 25 C Variance (V) V GS(th) -.5 -. I D = 25 µ I D =5m...2.4.6.8..2 V SD -Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage -.5-5 - 25 25 5 75 25 5 75 T J - Temperature ( C) Threshold Voltage 33 32 Typical Drain-Source Brakdown Voltage 3 3 29 28 I D =m () I DV T J = 5 C T J =25 C 27 26-5 - 25 25 5 75 25 5 75 T J - Temperature ( C) Typical Drain-Source Brakdown Voltage vs. Junction Temperature..... t in (s) Single Pulse valanche Current vs. Time 4 Document Number: 6982 S-883-Rev., 4-Feb-8
SUM6N2-3m9P TYPICL CHRCTERISTICS 25 C, unless otherwise noted 5 2 Limited byr DS(on) * I D - Drain Current () 9 6 3 Package Limited - Drain Current () I D µs, µs ms ms ms s,s,dc 25 5 75 25 5 75 T - mbient Temperature ( C) Drain Current vs. mbient Temperature T C = 25 C Single Pulse. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which r DS(on) is specified Safe Operating rea Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 Single Pulse. -4-3 -2 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:///ppg?6982. Document Number: 6982 S-883-Rev., 4-Feb-8 5
TO-263 (D 2 PK): 3-LED Package Information -B- E -- L2 c2 D4 D2 D3 E K 6 E3 D L3 L D e b2 b Detail c E2. M M 2 PL - 5 L L4 DETIL (ROTTED 9 ) M b b SECTION - Notes. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. c c c* INCHES MILLIMETERS DIM. MIN. MX. MIN. MX..6.9 4.64 4.826 b.2.39.58.99 b.2.35.58.889 b2.45.55.43.397 Thin lead.3.8.33.457 Thick lead.23.28.584.7 c Thin lead.3.7.33.43 Thick lead.23.27.584.685 c2.45.55.43.397 D.34.38 8.636 9.652 D.22.24 5.588 6.96 D2.38.42.965.67 D3.45.55.43.397 D4.44.52.8.32 E.38.4 9.652.44 E.245-6.223 - E2.355.375 9.7 9.525 E3.72.78.829.98 e. BSC 2.54 BSC K.45.55.43.397 L.575.625 4.65 5.875 L.9. 2.286 2.794 L2.4.55.6.397 L3.5.7.27.778 L4. BSC.254 BSC M -.2 -.5 ECN: T3-77-Rev. K, 3-Sep-3 DWG: 5843 Revison: 3-Sep-3 Document Number: 798 THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
N826 RECOMMENDED MINIMUM PDS FOR D 2 PK: 3-Lead.42 (.668).635 (6.29).355 (9.7).45 (3.683).35 (3.429).2 (5.8).5 (.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 -pr-5
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